Vishay T40HF... Series, T70HF... Series, T85HF... Series, T110HF... Series Data Sheet

T40HF..., T70HF..., T85HF..., T110HF... Series

Vishay Semiconductors

Power Rectifier Diodes (T-Modules), 40 A to 110 A

D-55

PRODUCT SUMMARY

IF(AV)	40 A to 110 A
Type	Modules - Diode, High Voltage

FEATURES

• Electrically isolated base plate

• Types up to 1200 VRRM

•3500 VRMS isolating voltage

•Simplified mechanical designs, rapid assembly

•High surge capability

•Large creepage distances

•UL E78996 approved

•Compliant to RoHS directive 2002/95/EC

•Designed and qualified for industrial level

DESCRIPTION

These series of T-modules use standard recovery power rectifier diodes. The semiconductors are electrically isolated from the metal base, allowing common heatsink and compact assembly to be built.

Applications include power supplies, battery charges, welders, motor controls and general industrial current rectification.

MAJOR RATINGS AND CHARACTERISTICS

SYMBOL	CHARACTERISTICS	T40HF	T70HF		T85HF	T110HF	UNITS
IF(AV)		40	70		85	110	A
	TC	85	85		85	85	°C
IF(RMS)		63	110		134	173	A
IFSM	50 Hz	570	1200		1700	2000	A
	60 Hz	600	1250		1800	2100
I2t	50 Hz	1630	7100		14 500	20 500	A2s
	60 Hz	1500	6450		13 500	18 600
I2√t		16 300	70 700		148 700	204 300	A2√s
VRRM			100 to 1200				V
TJ				- 40 to 150			°C

T40HF..., T70HF..., T85HF..., T110HF... Series

Vishay Semiconductors						Power Rectifier Diodes
						(T-Modules), 40 A to 110 A
ELECTRICAL SPECIFICATIONS
VOLTAGE RATINGS
TYPE		VOLTAGE			VRRM, MAXIMUM REPETITIVE					VRSM, MAXIMUM NON-REPETITIVE						IRRM MAXIMUM
					PEAK REVERSE VOLTAGE					PEAK REVERSE VOLTAGE							AT TJ = 25 °C
NUMBER		CODE
						V						V					μA
		10				100					150
		20				200					300
T40HF...
		40				400					500
T70HF...
		60				600					700						100
T85HF...
		80				800					900
T110HF...
		100				1000					1100
		120				1200					1300
FORWARD CONDUCTION
PARAMETER					SYMBOL		TEST CONDITIONS					T40HF	T70HF	T85HF			T110HF	UNITS
Maximum average forward current					IF(AV)	180° conduction, half sine wave						40	70	85			110	A
at case temperature												85	85	85			85	°C
Maximum RMS forward current					IF(RMS)							63	110	134			173	A
						t = 10 ms		No voltage				570	1200	1700			2000
Maximum peak, one-cycle						t = 8.3 ms		reapplied				600	1250	1800			2100	A
forward, non-repetitive					IFSM
						t = 10 ms		100 % VRRM				480	1000	1450			1700
surge current										Sinusoidal
						t = 8.3 ms		reapplied				500	1050	1500			1780
										half wave,
										initial TJ =
						t = 10 ms		No voltage				1630	7100	14 500			20 500
								reapplied		TJ maximum
						t = 8.3 ms						1500	6450	13 500			18 600
Maximum I2t for fusing					I2t													A2s
						t = 10 ms		100 % VRRM				1150	5000	10 500			14 500
						t = 8.3 ms		reapplied				1050	4570	9600			13 200
Maximum I2√t for fusing					I2√t	t = 0.1 ms to 10 ms, no voltage reapplied						16 300	70 700	148 700			204 300	A2√s
Low level value of					VF(TO)1	(16.7 % x π x IF(AV) < I < π x IF(AV)),						0.66	0.76	0.68			0.68
threshold voltage						TJ maximum
																		V
High level value of					VF(TO)2	(I > π x IF(AV)), TJ maximum						0.84	0.95	0.90			0.86
threshold voltage
Low level value of					rf1	(16.7 % x π x IF(AV) < I < π x IF(AV)),						4.3	2.4	1.76			1.56
forward slope resistance						TJ maximum
																		mΩ
High level value of					rf2	(I > π x IF(AV)), TJ maximum						3.1	1.7	1.08			1.12
forward slope resistance
						IFM = π x IF(AV), TJ = 25 °C,
Maximum forward voltage drop					VFM	tp = 400 μs square pulse						1.30	1.35	1.27			1.35	V
						Average power = VF(TO) x IF(AV) + rf x (IF(RMS))2

T40HF..., T70HF..., T85HF..., T110HF... Series

Power Rectifier Diodes

Vishay Semiconductors

(T-Modules), 40 A to 110 A

BLOCKING

PARAMETER

SYMBOL

TEST CONDITIONS

T40HF

T70HF

T85HF

T110HF

UNITS

Maximum peak reverse

IRRM

TJ = 150 °C

15

15

20

20

mA

leakage current

RMS isolation voltage

VISOL

50 Hz, circuit to base, all terminals shorted

3500

3500

3500

3500

V

TJ = 25 °C, t = 1 s

THERMAL AND MECHANICAL SPECIFICATIONS

PARAMETER

SYMBOL

TEST CONDITIONS

VALUES

UNITS

T40HF

T70HF

T85HF

T110HF

Maximum junction operating

TJ, TStg

- 40 to 150

°C

and storage temperature range

Maximum thermal resistance,

RthJC

DC operation

1.36

0.69

0.62

0.47

junction to case per junction

K/W

Maximum thermal resistance,

Mounting surface smooth, flat

0.2

case to heatsink

RthCS

and greased

Mounting torque,

to heatsink

Non-lubricated

M3.5 mounting screws (1)

1.3 ± 10 %

Nm

± 10 %

terminals

threads

M5 screw terminals

3 ± 10 %

Approximate weight

See dimensions - link at the end of datasheet

54

g

Case style

T-module (D-55)

Note

(1)A mounting compound is recommended and the torque should be rechecked after a period of about 3 hours to allow for the spread of the compound

R CONDUCTION PER JUNCTION

	DEVICES	SINUSOIDAL CONDUCTION AT TJ MAXIMUM					RECTANGULAR CONDUCTION AT TJ MAXIMUM					UNITS
		180°	120°	90°	60°	30°	180°	120°	90°	60°	30°
	T40HF...	0.12	0.14	0.18	0.27	0.46	0.09	0.15	0.20	0.28	0.46
	T70HF...	0.09	0.11	0.14	0.20	0.35	0.07	0.11	0.15	0.21	0.35	K/W
	T85HF...	0.08	0.09	0.12	0.18	0.31	0.06	0.10	0.13	0.19	0.31
	T110HF...	0.05	0.07	0.09	0.14	0.23	0.05	0.08	0.10	0.15	0.24

Note

• Table shows the increment of thermal resistance RthJC when devices operate at different conduction angles than DC

T40HF..., T70HF..., T85HF..., T110HF... Series

Vishay Semiconductors	Power Rectifier Diodes
	(T-Modules), 40 A to 110 A

	<![if ! IE]> <![endif]>(°C)	150		T40HF.. Series
		140		R thJC (DC) = 1.36 K/W
	<![if ! IE]> <![endif]>Temperature
		130
		120
		110			Conduction Angle
	<![if ! IE]> <![endif]>Case
		100
	<![if ! IE]> <![endif]>Allowable
		90		30°	60°
		80			90°	120°
	<![if ! IE]> <![endif]>Maximum	70
						180°
		60
		0	10	20	30	40	50

Average Forward Current (A)

Fig. 1 - Current Ratings Characteristics

	<![if ! IE]> <![endif]>(°C)	150			T40HF.. Series
	<![if ! IE]> <![endif]>Temperature	140			R thJC (DC) = 1.36 K/W
		130
		120
						Conduction Period
	<![if ! IE]> <![endif]>Case	110
		100
	<![if ! IE]> <![endif]>Allowable
		90		30°	60°
		80			90°
	<![if ! IE]> <![endif]>Maximum	70				120°
						180°		DC
		60
		0	10	20	30	40	50	60	70
			Average Forward Current (A)

Fig. 2 - Current Ratings Characteristics

<![if ! IE]> <![endif]>Loss(W)	45	180°
													1			1		R
													.
	40	120°									2		5				K
														K			/	thS
												K			/		W
													/		W			A
			90°										W
<![if ! IE]> <![endif]>Power	35																		=
			60°						3
																			0
																			.
			30°							K									5
											/								K
	30											W							/
<![if ! IE]> <![endif]>Forward																			W
			RMS Limit
	25																		-
																			D
									5
										K/									e
																			lt
																			a
	20											W							R
<![if ! IE]> <![endif]>Average									7	K/
	15					Conduction Angle						W
									10		K/
	10												W
						T40HF.. Series
<![if ! IE]> <![endif]>Maximum
	5					T J= 150°C
	0	5	10	15	20	25	30	35	40				25			50		75	100	125	150
	0

Average Forward Current (A) Maximum Allowable Ambient Temperature (°C)

Fig. 3 - Forward Power Loss Characteristics

<![if ! IE]> <![endif]>Loss(W)	70		DC
															R
			180°
	60															t
																h
			120°													S
<![if ! IE]> <![endif]>Power											1					A	=
													K
			90°											/			0
															W
																	.
	50		60°							1.							5
																	K
											5							/
			30°										K/					W
<![if ! IE]> <![endif]>Forward															W			-
	40									2								D
											K							e
																		l
																		t
												/						a
										3			W					R
											K
	30	RMSLimit
<![if ! IE]> <![endif]>Average												/W
	20					Conduction Period				5	K/			W
										7
											K/
<![if ! IE]> <![endif]>Maximum						T40HF.. Series								W
	10									10		K/			W
						T J = 150°C
	0	0	10	20	30	40	50	60	70						25		50	75	100	125	150

Average Forward Current (A) Maximum Allowable Ambient Temperature (°C)

Fig. 4 - Forward Power Loss Characteristics