Vishay T40HFL Series, T70HFL Series, T85HFL Series Data Sheet

Fast Recovery Diodes (T-Modules), 40 A/70 A/85 A

PRODUCT SUMMARY

I

F(AV)

Type Modules - Diode, Fast

D-55

40 A/70 A/85 A

T40HFL, T70HFL, T85HFL Series

Vishay Semiconductors

FEATURES

• Fast recovery time characteristics

• Electrically isolated base plate

• 3500 V

• Standard JEDEC package

• Simplified mechanical designs, rapid assembly

• Large creepage distances

• UL E78996 approved

• Compliant to RoHS directive 2002/95/EC

• Designed and qualified for industrial level

DESCRIPTION

The series of T-modules uses fast recovery power diodes in
a single diode configuration. The semiconductors are
electrically isolated from the metal base, allowing common
heatsink and compact assemblies to be built.
These single diode modules can be used in conjunction with
the thyristor modules as a freewheel diode. Application
includes self-commutated inverters, DC choppers, motor
control, inductive heating and electronic welders. These
modules are intended for those applications where very fast
recovery characteristics are required and for general power
switching applications.

isolating voltage

RMS

MAJOR RATINGS AND CHARACTERISTICS

SYMBOL CHARACTERISTICS T40HFL T70HFL T85HFL UNITS

I

F(AV)

I

F(RMS)

I

FSM

2

I

t

V

RRM

t

rr

T

J

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50 Hz 475 830 1300

60 Hz 500 870 1370

50 Hz 1130 3460 8550

60 Hz 1030 3160 7810

Range 100 to 1000 V

Range 200 to 1000 ns

Range - 40 to 125 °C

40 70 85 A

63 110 133 A

A

A2s

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T40HFL, T70HFL, T85HFL Series

Vishay Semiconductors

Fast Recovery Diodes

(T-Modules), 40 A/70 A/85 A

ELECTRICAL SPECIFICATIONS

VOLTAGE RATINGS

V

, MAXIMUM

V

MAXIMUM REPETITIVE

TYPE NUMBER

VOLTAGE

CODE

t

rr

CODE

RRM,

PEAK REVERSE VOLTAGE

V

10 S02, S05, S10 100 150

20 S02, S05, S10 200 300

T40HFL..
T70HFL..
T85HFL..

40 S02, S05, S10 400 500

60 S02, S05, S10 600 700

80 S05, S10 800 900

100 S05, S10 1000 1100

FORWARD CONDUCTION

PARAMETER SYMBOL TEST CONDITIONS T40HFL T70HFL T85HFL UNITS

Maximum average
forward current
at case temperature

Maximum RMS
forward current

Maximum peak, one-cycle
forward, non-repetitive
surge current

Maximum I

Maximum I

2

t for fusing I2t

2

√t for fusing I2√t t = 0.1 ms to 10 ms, no voltage reapplied 11 300 34 600 85 500 A2√s

Low level value of
threshold voltage

High level value of
threshold voltage

Low level value of forward
slope resistance

High level value of forward
slope resistance

Maximum forward
voltage drop

I

F(AV)

I

F(RMS)

I

FSM

V

F(TO)1

V

F(TO)2

r

r

V

180° conduction, half sine wave

t = 10 ms

t = 8.3 ms 500 870 1370

t = 10 ms

t = 8.3 ms 420 730 1150

t = 10 ms

t = 8.3 ms 1030 3160 7810

t = 10 ms

t = 8.3 ms 730 2230 5520

TJ = 25 °C, (16.7 % x π x I

TJ = 25 °C, (I > π x I

TJ = 25 °C, (16.7 % x π x I

f1

TJ = 25 °C, (I > π x I

f2

IFM = π x I

FM

Average power = V

No voltage
reapplied

100 % V

RRM

reapplied

No voltage

Sinusoidal half wave,
initial T

= TJ maximum

J

reapplied

100 % V

RRM

reapplied

< I < π x I

F(AV)

) 0.84 0.90 0.86

F(AV)

< I < π x I

F(AV)

) 6.8 2.67 2.07

F(AV)

, TJ = 25 °C, tp = 400 μs square wave

F(AV)

F(TO)

x I

F(AV)

+ rf x (I

F(AV)

F(AV)

F(RMS)

RSM

NON-REPETITIVE PEAK

REVERSE VOLTAGE

I

RRM

AT T

V

40 70 85 A

70 °C

63 110 133 A

475 830 1300

400 700 1100

1130 3460 8550

800 2450 6050

) 0.82 0.87 0.84

) 7.0 2.77 2.15

2

)

1.60 1.73 1.55 V

MAXIMUM

= 25 °C

J

μA

100

A

A

V

mΩ

2

s

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T40HFL, T70HFL, T85HFL Series

Fast Recovery Diodes

Vishay Semiconductors

(T-Modules), 40 A/70 A/85 A

REVERSE RECOVERY CHARACTERISTICS

PARAMETER SYMBOL TEST CONDITIONS

(1)

TJ = 25 °C, -dIF/dt = 100 A/μs
I

Maximum reverse
recovery time

t

rr

= 1 A to VR = 30 V

F

= 25 °C, -dIF/dt = 25 A/μs

T

J

= π x rated I

I

FM

, VR = - 30 V

F(AV)

TJ = 25 °C, -dIF/dt = 100 A/μs

= 1 A to VR = 30 V

Maximum reverse
recovery charge

Q

I

F

rr

= 25 °C, -dIF/dt = 25 A/μs

T

J

I

= π x rated I

FM

, VR = - 30 V

F(AV)

Note

(1)

Tested on LEM 300 A diodemeter tester

BLOCKING

PARAMETER SYMBOL TEST CONDITIONS T40HFL T70HFL T85HFL UNITS

Maximum peak reverse leakage current I

RMS isolation voltage V

RRM

ISOL

T40HFL T70HFL T85HFL

S02 S05 S10 S02 S05 S10 S02 S05 S10

70 110 270 70 110 270 80 120 290

200 500 1000 200 500 1000 200 500 1000

0.25 0.4 1.35 0.25 0.4 1.35 0.3 0.6 1.6

0.55 2.0 8.0 0.6 2.1 8.5 0.8 3.5 1.5

TJ = 125 °C 20 mA

50 Hz, circuit to base, all terminals
shorted, T

= 25 °C, t = 1 s

J

3500 V

UNITS

ns

μC

THERMAL AND MECHANICAL SPECIFICATIONS

PARAMETER SYMBOL TEST CONDITIONS T40HFL T70HFL T85HFL UNITS

Junction operating temperature range T

Storage temperature range T

Maximum internal thermal resistance,
junction to case per module

Thermal resistance,
case to heatsink per module

R

R

base to heatsink

Mounting torque ± 10 %

busbar to terminal

Approximate weight

J

Stg

thJC

thCS

DC operation 0.85 0.53 0.46

Mounting surface, flat, smooth
and greased

M3.5 mounting screws

(1)

Non-lubricated threads

M5 screws terminals
Non-lubricated threads

See dimensions ­link at the end of datasheet

- 40 to 125

- 40 to 150

0.2

1.3 ± 10 %

3 ± 10 %

54 g

19 oz.

°C

K/W

Nm

Case style D-55 (T-module)

Note

(1)

A mounting compound is recommended and the torque should be rechecked after a period of about 3 hours to allow for the spread of
the compound

ΔR CONDUCTION

DEVICES

SINUSOIDAL CONDUCTION AT T

180° 120° 90° 60° 30° 180° 120° 90° 60° 30°

T40HFL 0.06 0.08 0.10 0.14 0.24 0.05 0.08 0.10 0.15 0.24

T85HFL 0.04 0.05 0.06 0.09 0.15 0.03 0.05 0.07 0.09 0.015

Note

• The table above shows the increment of thermal resistance R

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MAXIMUM RECTANGULAR CONDUCTION AT TJ MAXIMUM

J

UNITS

K/WT70HFL 0.05 0.06 0.08 0.11 0.19 0.04 0.06 0.08 0.12 0.19

when devices operate at different conduction angles than DC

thJC

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T40HFL, T70HFL, T85HFL Series

Vishay Semiconductors

130

120

110

100

90

80

70

60

50

0 1020304050

Maximum Allowable Case Temperature (°C)

Fig. 1 - Current Ratings Characteristics

130

120

110

100

90

80

70

60

50

0 10203040506070

Maximum Allowable Case Temperature (°C)

Fig. 2 - Current Ratings Characteristics

T4 0H FL. . Se r ie s
R (DC) = 0.85 K/W

thJC

Conduct ion Angle

30°

60°

90°

Average Forward Current (A)

T4 0HFL. . Se ri e s
R (DC) = 0.85 K/W

thJC

Cond uc tion Period

30°

60°

90°

120°

180°

Average Fo rward Current (A)

120°

Fast Recovery Diodes

(T-Modules), 40 A/70 A/85 A

180°

DC

130

120

110

100

90

80

70

60

50

Maxim um Allowa ble Case Temperature (°C)

0 20406080100120

Average Forward Current (A)

T7 0H FL. . Se ri e s
R (DC) = 0.53 K/ W

thJC

Conduction Period

30°

60°

90°

120°

180°

Fig. 4 - Current Ratings Characteristics

130

120

110

100

90

80

70

60

50

Maximum Allowable Case Temperature (°C)

0 102030405060708090

T8 5H FL. . Se r i e s
R (DC) = 0.46 K/W

thJC

Conduction Angle

30°

60°

90°

Avera ge Forwa rd Current (A)

Fig. 5 - Current Ratings Characteristics

DC

120°

180°

130

120

110

100

90

80

70

60

50

Maximum Allow able Case Temperature (°C)

0 1020304050607080

T7 0HFL . . Se ri e s
R (D C) = 0 .5 3 K/ W

thJC

Cond uct io n Angle

30°

60°

90°

Average Forward Current (A)

Fig. 3 - Current Ratings Characteristics

120°

180°

130

120

110

100

90

80

70

60

50

Maximum Allowable Case Temperature (°C)

020406080100120140

Average Forward Current (A)

T8 5H FL. . Se r i e s
R ( DC ) = 0. 46 K/ W

thJC

Conduction Period

30°

60°

90°

120°

180°

Fig. 6 - Current Ratings Characteristics

DC

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T40HFL, T70HFL, T85HFL Series

70

60

50

40

30

20

10

0

0 5 10 15 20 25 30 35 40

Maximum Average Forward Power Lo ss (W)

180°
120°

90°
60°
30°

RM S Lim it

Conduc tion Angle

T4 0HFL .. Se ri e s
T = 12 5 ° C

J

Average Forward Current (A)

Fig. 7 - Forward Power Loss Characteristics

90

DC

80

180°
120°

70

90°
60°

60

30°

50

RM S Lim it

40

30

20

10

0

0 10203040506070

Maximum Averag e Forward Power Lo ss (W)

Average Forward Current (A)

Conduct ion Period

T4 0H FL. . Se r ie s
T = 125°C

J

Fig. 8 - Forward Power Loss Characteristics

Fast Recovery Diodes

(T-Modules), 40 A/70 A/85 A

140

120

100

80

60

40

20

0

Maximum Average Forward Power Loss (W)

020406080100120

Fig. 10 - Forward Power Loss Characteristics

110

100

90

80

70

60

50

40

30

20

10

0

Maximum Average Forward Power Loss (W)

0 102030405060708090

Fig. 11 - Forward Power Loss Characteristics

Vishay Semiconductors

DC
180°
120°

90°

60°

30°

RM S Li m it

Cond uc tion Period

T70HFL.. Series
T = 1 25 ° C

Av e ra g e Fo rwa rd Curre nt (A)

180°
120°

90°
60°
30°

RM S Lim it

Conduction Angle

T85HFL.. Series
T = 125°C

Average Forward Current (A)

J

J

100

90

80

70

60

50

40

30

20

10

0

Maximum Average Forward Power Loss (W)

180°
120°

90°
60°
30°

RM S Lim it

Conduction Angle

T7 0H FL. . Se r ie s
T = 125° C

J

0 10203040506070

Average Forward Current (A)

Fig. 9 - Forward Power Loss Characteristics

160

DC
180°

140

120°

90°

120

60°

30°

100

80

RM S Li m it

60

40

20

0

Maximum Average Forward Power Loss (W)

0 20 40 60 80 100 120 140

Average Forward Current (A)

Conduction Perio d

T85HFL.. Series
T = 1 25 °C

J

Fig. 12 - Forward Power Loss Characteristics

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T40HFL, T70HFL, T85HFL Series

Vishay Semiconductors

450

At Any Rated Load Condition And With

Ra t e d V A p p l ie d Fo ll o w in g Su r g e .

400

350

300

250

200

150

T4 0HF L . . Se r i e s

100

Pe ak Ha lf Sine Wave Fo rwa rd Current (A)

110100

Number Of Equal Amplitude Half Cycle Current Pulses (N)

Fig. 13 - Maximum Non-Repetitive Surge Current

500

Maxim um Non Repe t itive Su rge Current

450

400

350

300

250

200

150

T4 0H FL. . Se ri e s

100

Peak Half Sine Wave Forward Current (A)

0.01 0.1 1

RRM

Versus Pulse Tra in Duration.

Pulse Train Duration (s)

Init ial T = 125°C
@ 60 Hz 0.0083 s
@ 50 Hz 0.0100 s

Init ia l T = 125° C

No Vo ltage Rea p p lie d

Ra t e d V Re a p p l ie d

RRM

Fast Recovery Diodes

(T-Modules), 40 A/70 A/85 A

J

J

850

Maximum Non Repetitive Surge Current

750

650

550

450

350

250

Pea k Half Sin e Wa ve Forw a rd Curre nt (A )

150

0.01 0.1 1

Versus Pulse Train Dura tion.

No Vo lt a g e Rea pplied

Rat ed V Rea ppl ied

T7 0H FL . . Se ri e s

Pulse Tra in Durat ion (s)

Initia l T = 125°C

J

RRM

Fig. 16 - Maximum Non-Repetitive Surge Current

1200

1100

1000

Pea k Half Sine Wave Forwa rd Current (A)

At Any Rate d Lo a d Co nd ition And With

Ra ted V Ap p lied Fo llowing Surge.

RRM

900

800

700

600

500

T85HFL.. Series

400

300

110100

Numbe r Of Equal Am plitud e Half Cyc le Current Pulses (N)

Ini tia l T = 125° C

J

@ 60 Hz 0.0083 s
@ 50 Hz 0.0100 s

Fig. 14 - Maximum Non-Repetitive Surge Current

800

At Any Rated Loa d Cond ition And With

Rated V Applied Following Surge.

700

600

500

400

300

T70HFL.. Series

Peak Half Sine Wave Forw ard C urrent (A)

200

110100

Number Of Eq ual Amplitude Half Cycle Current Pulses (N)

RRM

Initia l T = 125°C

J

@ 60 Hz 0.0083 s
@ 50 Hz 0.0100 s

Fig. 15 - Maximum Non-Repetitive Surge Current

Fig. 17 - Maximum Non-Repetitive Surge Current

1300

Ma ximum Non Repet itive Surge Current

1200

1100

1000

900

800

700

600

500

400

Peak Half Sine Wave Forward Current (A)

300

0.01 0 .1 1

Versus Pulse Train Duration.

No Vo lt ag e Rea p plied

Rated V Reapplied

T8 5HF L . . Se ri e s

Pulse Train Duration (s)

Init ial T = 125°C

J

RRM

Fig. 18 - Maximum Non-Repetitive Surge Current

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T40HFL, T70HFL, T85HFL Series

(T-Modules), 40 A/70 A/85 A

0.51

0.5

I = 300A

50A

T4 0 H F L . . S0 2
T7 0 H F L . . S0 2
T = 12 5 ° C

FM

220A

172A

100A

50A

00101

J

0.49

0.48

0.47

T4 0 H FL. . S0 2

0.46
T7 0 H FL. . S0 2

T = 1 2 5 ° C

Maximum Reverse Recovery Time - Trr (µs)

Ra te Of Fall Of Fo rwa rd Current - di/ dt (A/ µs)

J

0.45

Fig. 19 - Recovery Time Characteristics

8

I = 300A

FM

220A

7

6

5

4

3

2

1

10 20 30 40 50 60 70 80 90 100

Ma ximu m Reverse Rec ov e ry Ch arg e - Q rr (µC )

Ra te Of Fa ll Of Forward Current - di/d t (A/µs)

172A
100A

Fast Recovery Diodes

Vishay Semiconductors

1.1

1

I = 300A

FM

0.9

0.8

0.7

T4 0 HF L . . S0 5
T7 0 HF L . . S0 5
T = 1 2 5 ° C

J

Maximum Reverse Recovery Time - Trr (µs)

0.6

Rate Of Fall Of Forward Current - di/dt (A/µs)

Fig. 22 - Recovery Time Characteristics

20

I = 3 00A

FM

18

16

14

12

10

8

6

4

10 20 30 40 50 60 70 80 90 100

Maximum Reverse Recovery Charge - Qrr (µC)

Ra te O f Fa ll Of Forwa rd Curre nt - di/ dt (A/ µs)

220A
172A
100A

50A

220A

172A

100A

50A

T4 0 H FL . . S0 5
T7 0 H FL . . S0 5
T = 12 5 ° C

J

00101

Fig. 20 - Recovery Charge Characteristics

20

I = 300A

FM

18

16

14

12

10

8

6

4

Maximum Reverse Recovery Current - Irr (A)

Ra te Of Fa ll Of Forward Current - di/dt (A/ µs)

220A

172A
100A

50A

T4 0 HF L . . S0 2
T7 0 HF L . . S0 2
T = 1 2 5 ° C

J

10 20 30 40 50 60 70 80 90 100

Fig. 21 - Recovery Current Characteristics

Fig. 23 - Recovery Charge Characteristics

28

26

I = 3 00A

FM

24

22

20

18

16

14

12

10

8

6

M a xim um Reve rse Rec o ve ry C urre nt - Irr ( A)

Rate Of Fall Of Forward Current - di/dt (A/ µs)

220A
172A
100A

50A

T4 0 H F L . . S0 5
T7 0 H F L . . S0 5
T = 125 °C

J

10 20 30 40 50 60 70 80 90 100

Fig. 24 - Recovery Current Characteristics

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T40HFL, T70HFL, T85HFL Series

Vishay Semiconductors

1.8

1.7

1.6

1.5

1.4

1.3

1.2
T4 0 H F L . . S1 0
T7 0 H F L . . S1 0

1.1
T = 125 °C

J

Maximum Reverse Rec overy Time - Trr (µs)

1

Ra te Of Fa ll Of Forward Current - di/d t (A/µs)

Fig. 25 - Recovery Time Characteristics

40

35

30

25

20

100A

50A

I = 300A

FM

I = 300A

200A

Fast Recovery Diodes

(T-Modules), 40 A/70 A/85 A

1.2

FM

00101

200A

100A

50A

1.1

1

0.9

0.8

T8 5 H FL . . S0 2

0.7
T = 1 2 5° C

J

Ma xim um Re verse Rec ove ry Time - Trr ( µs)

0.6

Ra te Of Fall Of Forward C urrent - di/dt (A/µs)

I = 300A

FM

200A

100A

50A

00101

Fig. 28 - Recovery Time Characteristics

25

I = 300A

FM

20

15

200A

100A

50A

15

10

5

10 20 30 40 50 60 70 80 90 100

Maximum Reverse Re covery Cha rge - Qrr (µC)

Ra te Of Fall O f Forw ard Current - d i/ d t (A/ µs)

T4 0 HF L . . S1 0
T7 0 HF L . . S1 0
T = 1 2 5 ° C

J

Fig. 26 - Recovery Charge Characteristics

45

40

35

30

25

20

15

10

Maximum Reverse Rec overy Current - Irr (A)

10 20 30 40 50 60 70 80 90 100

Ra te Of Fall Of Fo rwa rd Current - di/ dt (A/µs)

I = 300A

FM

T4 0 H FL . . S1 0
T7 0 H FL . . S1 0
T = 12 5 ° C

J

200A

100A

50A

Fig. 27 - Recovery Current Characteristics

10

T8 5 H F L . . S0 2
T = 1 2 5 ° C

5

10 20 30 40 50 60 70 80 90 100

Maximum Reverse Recovery Charge - Qrr (µC)

Ra te Of Fall Of Forward Current - di/dt (A/ µs)

J

Fig. 29 - Recovery Charge Characteristics

28

I = 300A

FM

26

24

22

20

18

16

14

12

10

8

6

Ma ximum Re verse Rec ov e ry Cu rren t - Irr (A )

10 20 30 40 50 60 70 80 90 100

Ra t e O f Fa ll O f Fo rw a rd C ur re n t - d i / d t ( A / µs)

200A
100A

50A

T8 5 H FL. . S0 2
T = 125°C

J

Fig. 30 - Recovery Current Characteristics

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T40HFL, T70HFL, T85HFL Series

(T-Modules), 40 A/70 A/85 A

1.3

1.2

I = 300A

1.1

1

0.9
T8 5 H FL . . S0 5

T = 12 5 °C

J

Ma ximum Reverse Rec ove ry Tim e - Trr ( µs)

0.8

Ra te Of Fall Of Forward Current - di/d t (A/µs)

Fig. 31 - Recovery Time Characteristics

30

27

24

21

18

15

12

9

6

10 20 30 40 50 60 70 80 90 100

Maximum Reverse Recovery Charge - Qrr (µC)

Ra t e O f Fa l l Of Fo r wa r d C u rr en t - d i / d t (A / µ s)

Fig. 32 - Recovery Charge Characteristics

FM

200A

100A

I = 300A

FM

200A

100A

T8 5 H FL . . S0 5
T = 12 5° C

J

50A

00101

50A

Fast Recovery Diodes

Vishay Semiconductors

2

1.9

1.8

1.7

1.6

1.5

1.4

1.3

1.2
T8 5 H F L . . S1 0

1.1

T = 125°C

J

Maximum Reverse Recovery Time - Trr (µs)

1

Rate Of Fall Of Forward Current - di/dt (A/ µs)

Fig. 34 - Recovery Time Characteristics

55

50

45

40

35

30

25

20

15

10

10 20 30 40 50 60 70 80 90 100

Maximum Reverse Recovery Charge - Qrr (µC)

Ra te Of Fa ll Of Forward Current - di/dt (A/ µs)

Fig. 35 - Recovery Charge Characteristics

I = 300A

FM

I = 300A

FM

T8 5 H F L . . S1 0
T = 125°C

J

200A

100A

50A

00101

200A

100A

50A

35

30

25

20

15

10

Ma ximum Reve rse Re co ve ry C urrent - Irr (A)

10 20 30 40 50 60 70 80 90 10 0

Ra t e O f Fa ll O f For w a rd C u r re n t - d i / d t ( A/ µ s)

I = 300A

FM

200A

T8 5 H FL . . S0 5
T = 125° C

J

100A

50A

Fig. 33 - Recovery Current Characteristics

60

55

50

45

40

35

30

25

20

15

Ma ximu m Reve rse Re c overy Curren t - Irr (A)

10 20 30 40 50 60 70 80 90 100

Rate Of Fall Of Forward Current - di/dt (A/µs)

I = 300A

FM

T8 5 H F L . . S1 0
T = 125°C

J

200A

100A

50A

Fig. 36 - Recovery Current Characteristics

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Revision: 19-May-10 [e-mail]

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T40HFL, T70HFL, T85HFL Series

4

4

Vishay Semiconductors

1E4

1E3

20000

1E2

Peak Forw ard Current (A)

1E1

1E1 1E2 1E3 1E

10000

tp

T4 0H FL .. Se r i e s
Si n u so i d a l P u l se
T = 70°C

1E4

1E3

2500

5000

C

Pu lse Ba se w id t h ( µ s)

Fast Recovery Diodes

(T-Modules), 40 A/70 A/85 A

1500

1000

400

Fig. 37 - Frequency Characteristics

200

50 Hz

1E1

1E4

E1 1E2 1E3 1 E4

T4 0H FL. . Series
Tr a p e zo i d a l Pu l se
T = 70 °C

tp

T4 0 H F L. .
Tr a p e zo i d a l Pu l se
T = 9 0 °C

tp

C

C

2500

5000

1500

Pulse Base w id th (µ s)

1000

400

200

50 Hz

1E2

Peak Forward Current (A)

1E1

1E1 1E2 1E3 1E4

tp

1000020000

5000

T40HFL.. Serie s

Si n u so i d a l Pu l se
T = 90°C

C

15002500

200

Pulse Basewidth (µs)

Fig. 38 - Frequency Characteristics

1E4

20 joule s p er pulse

10

1E3

0.1

0.04

1E2

1E1

Peak Forward Current (A)

tp

1E0

1E1 1E2 1E3 1E

0.02

0.01

T40HFL.. Serie s

Sin usoid al Pulse

T = 125 °C

J

4

2

1

0.4

0.2

Pulse Basewidth (µs)

Fig. 39 - Maximum Forward Energy Power Loss Characteristics

50 Hz4001000

1E1

1E4

E1 1 E2 1 E3 1 E4

5000

2500

1500

1000

400

Pu lse Ba sew id t h ( µ s)

10

4

2

1

0.4

0.2

0.1

0.04

0.02

0.01

T40HFL.. Seri es
Tr a p e z o i d a l P u ls e
T = 125°C

J

tp

di/dt = 50A/µs

1E4

E1 1 E2 1 E3 1 E4

1E1

Pu l se Ba sew id t h (µ s)

200

50 Hz

20 joules pe r pu lse

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, [e-mail], [e-mail] Revision: 19-May-10

T40HFL, T70HFL, T85HFL Series

Fast Recovery Diodes

(T-Modules), 40 A/70 A/85 A

1E4

1E3

5000

1000020000

1E2

tp

T70 HFL. . Se ri e s

Sinu so id al Pul se

T = 70 ° C

C

Peak Forward Current (A)

1E1

1 E1 1 E2 1 E3 1 E4

Pulse Ba se w id t h ( µ s)

1E4

1E3

2500

1500

1000

400

200

Fig. 40 - Frequency Characteristics

Vishay Semiconductors

50 Hz

tp

1E1 1E2 1E3 1E4

1E1

1E4

5000

T70HFL.. Series
Tr a p e zo i d a l Pu l se
T = 70°C

C

2500

1500

Pu lse Ba se w id t h (µ s)

400

1000 200

50 Hz

10000

5000

20000

1E2

tp

T7 0H FL . . S e ri e s
Sinusoida l Pulse
T = 90°C

Pe ak Fo rw a rd C urr e n t ( A)

1E1

1E1 1E2 1E3 1E4

2500

1500

C

4001000

200

Pu l se Ba se w i d t h ( µ s)

Fig. 41 - Frequency Characteristics

1E4

20 joules p er pulse

10

4

1E3

0.04

1E2

1E1

Peak Forward Current (A)

1E0

tp

1E1 1E2 1E3 1E4

0.02

0.01

T7 0H FL . . Se r i e s
Si n u so i d a l Pu l se
T = 125°C

J

2

1

0.4

0.2

0.1

Pu lse Ba se w id t h ( µ s)

Fig. 42 - Maximum Forward Energy Power Loss Characteristics

50 Hz

T7 0H FL. . Se ri e s
Tr a p e zo i d a l Pu l se
T = 90°C

tp

1E4

1E1 1E2 1E3 1E4

1E1

2500

5000

C

1500

1000

200

50 Hz400

Pu l se Ba se wi d t h ( µs)

20 joules per pulse

10

4

2

1

0.4

0.2

0.1

0.04

0.02

0.01

T7 0H FL .. Se r ie s
Trapezoidal pulse
T = 125°C

J

tp

di/dt = 50A/µs

1E4

1E11E21E31E4

1E1

Pulse Basewidth (µs)

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Revision: 19-May-10 [e-mail]

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T40HFL, T70HFL, T85HFL Series

Vishay Semiconductors

1E4

1E3

20000

10000

5000

1E2

tp

T85HFL.. Series

Si n u so i d a l Pu l se

T = 7 0° C

C

Pu lse Ba se w id t h ( µ s)

Peak Forward Current (A)

1E1

1E1 1E2 1E3 1E4

1E4

1E3

Fast Recovery Diodes

(T-Modules), 40 A/70 A/85 A

400

1000

Fig. 43 - Frequency Characteristics

50 Hz

20015002500

T85HFL.. Serie s

Tr a p e z o i d a l P u ls e

T = 70°C

tp

1E4

1E1 1E2 1E3 1E4

1E1

25005000

1500

C

Pu lse Ba se w id t h ( µ s)

1000

200

50 Hz400

400

1000

5000

1000020000

15002500

200

1E2

Peak Forward Current (A)

1E1

1E1 1E2 1E3 1E4

tp

T85HFL. . Se ries
Sinusoid al Pulse
T = 90°C

C

Pu lse Ba se wid t h ( µs)

Fig. 44 - Frequency Characteristics

1E4

20 joules per pulse

10

4

2

1E3

0.04

1E2

1E1

Pe a k Forw a rd C u rre nt (A )

tp

1E0

1E1 1E2 1E3 1E4

0.02

0.01

T85HFL.. Serie s
Si n u so i d a l Pu l se
T = 125 °C

J

Pu l se Ba se w id t h ( µs)

1

0.4

0.2

0.1

50 Hz

tp

1E4

1E1 1E2 1E3 1E4

1E1

5000

T85HFL.. Serie s
Trapezoida l Pulse
T = 90°C

C

2500

1500

1000

200

50 Hz400

Pu l se Ba se w id t h (µ s)

20 jo ule s p er p ulse

10

4

2

1

0.4

0.2

0.1

0.04

0.02

0.01

T8 5H FL .. Se r ie s

Tra p ezo id al Pulse

T = 125°C

J

tp

di/dt = 50A/µs

1E4

1E11E21E31E4

1E1

Pulse Basewidth (µs)

Fig. 45 - Maximum Forward Energy Power Loss Characteristics

www.vishay.com For technical questions within your region, please contact one of the following: Document Number: 93184
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T40HFL, T70HFL, T85HFL Series

Fast Recovery Diodes

Vishay Semiconductors

(T-Modules), 40 A/70 A/85 A

1000

100

T = 25°C

J

10

Insta ntaneous Forward Current (A)

1

0.5 1 1.5 2 2.5 3 3.5 4 4.5

Instantaneous Forward Voltage (V)

T = 12 5 ° C

J

T4 0H FL. . Se r i e s

Fig. 46 - Forward Voltage Drop Characteristics Fig. 47 - Forward Voltage Drop Characteristics

10000

1000

10000

1000

100

T = 25 °C

J

T = 1 25 ° C

10

In st a nt a ne o u s Fo rw a rd C u rr e n t ( A )

1

01234567

Instantaneous Forward Voltage (V)

J

T7 0HF L . . Se r i e s

T = 25 °C

J

T = 12 5 ° C

100

Instantaneous Forward Current (A)

10

01234567

Instantaneous Forward Voltage (V)

J

T8 5H FL. . Se ri e s

Fig. 48 - Forward Voltage Drop Characteristics

1

St e a d y St a t e V a l u e :
R = 0.85 K/W

thJC

R = 0.53 K/W

thJC

0.001

Tr a n si e n t Th e rm a l I m p e d a n c e Z ( K/ W )

thJC

R = 0.46 K/W

thJC

0.1
(DC Operation)

0.01

0.00001 0.0001 0.001 0.01 0.1 1 10 100

Fig. 49 - Thermal Impedance Z

T4 0H FL. . Se r i e s
T7 0H FL. . Se r i e s
T8 5H FL. . Se r i e s

Square Wave Pulse Duration (s)

Characteristics

thJC

Document Number: 93184 For technical questions within your region, please contact one of the following: www.vishay.com
Revision: 19-May-10 [e-mail]

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T40HFL, T70HFL, T85HFL Series

Vishay Semiconductors

ORDERING INFORMATION TABLE

Device code

CIRCUIT CONFIGURATION

CIRCUIT

Fast Recovery Diodes

(T-Modules), 40 A/70 A/85 A

T 40 HFL 100 S10

51324

1 - Module type

2 - Current rating

3

- Fast recovery diode

4 - Voltage code x 10 = V

5 -t

code

rr

CIRCUIT

CONFIGURATION CODE

RRM

40 = 40 A (average)
70 = 70 A (average)
85 = 85 A (average)

S02 = 200 ns
S05 = 500 ns

S10 = 1000 ns

CIRCUIT DRAWING

Single switch diode N/A

LINKS TO RELATED DOCUMENTS

Dimensions www.vishay.com/doc?95313

+-

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14 [e-mail]

, [e-mail], [e-mail] Revision: 19-May-10

D-55 T-Module Diode Standard and Fast Recovery

3 (0.12)

3.9 (0.15)

8 (0.31)

M5

30 (1.18)

27 (1.06)

41 (1.61) MAX.

25 ± 1

23.5 (0.93)

+

-

11

(0.43)

18

(0.71)

15 (0.59)

DIMENSIONS in millimeters (inches)

Outline Dimensions

Vishay Semiconductors

Document Number: 95313 For technical questions, contact: [e-mail]
Revision: 01-Jul-08 1

www.vishay.com

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Disclaimer

ALL PRODUCT, PRODUCT SPECIFICATIONS AND DATA ARE SUBJECT TO CHANGE WITHOUT NOTICE TO IMPROVE
RELIABILITY, FUNCTION OR DESIGN OR OTHERWISE.

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“Vishay”), disclaim any and all liability for any errors, inaccuracies or incompleteness contained in any datasheet or in any other
disclosure relating to any product.

Vishay makes no warranty, representation or guarantee regarding the suitability of the products for any particular purpose or
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operating parameters, including typical parameters, must be validated for each customer application by the customer’s
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including but not limited to the warranty expressed therein.

Except as expressly indicated in writing, Vishay products are not designed for use in medical, life-saving, or life-sustaining
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Material Category Policy

Vishay Intertechnology, Inc. hereby certifies that all its products that are identified as RoHS-Compliant fulfill the
definitions and restrictions defined under Directive 2011/65/EU of The European Parliament and of the Council
of June 8, 2011 on the restriction of the use of certain hazardous substances in electrical and electronic equipment
(EEE) - recast, unless otherwise specified as non-compliant.

Please note that some Vishay documentation may still make reference to RoHS Directive 2002/95/EC. We confirm that
all the products identified as being compliant to Directive 2002/95/EC conform to Directive 2011/65/EU.

Vishay Intertechnology, Inc. hereby certifies that all its products that are identified as Halogen-Free follow Halogen-Free
requirements as per JEDEC JS709A standards. Please note that some Vishay documentation may still make reference
to the IEC 61249-2-21 definition. We confirm that all the products identified as being compliant to IEC 61249-2-21
conform to JEDEC JS709A standards.

Revision: 02-Oct-12

1

Document Number: 91000