Vishay T40HF... Series, T70HF... Series, T85HF... Series, T110HF... Series Data Sheet

Power Rectifier Diodes (T-Modules), 40 A to 110 A

T40HF..., T70HF..., T85HF..., T110HF... Series

Vishay Semiconductors

FEATURES

• Electrically isolated base plate

• Types up to 1200 V

RRM

• 3500 V

RMS

isolating voltage

• Simplified mechanical designs, rapid assembly

• High surge capability

• Large creepage distances

• UL E78996 approved

• Compliant to RoHS directive 2002/95/EC

• Designed and qualified for industrial level

DESCRIPTION

These series of T-modules use standard recovery power rectifier diodes. The semiconductors are electrically isolated from the metal base, allowing common heatsink and compact assembly to be built. Applications include power supplies, battery charges, welders, motor controls and general industrial current rectification.

PRODUCT SUMMARY

I

F(AV)

40 A to 110 A

Type Modules - Diode, High Voltage

D-55

MAJOR RATINGS AND CHARACTERISTICS

SYMBOL CHARACTERISTICS T40HF T70HF T85HF T110HF UNITS

I

F(AV)

40 70 85 110 A

T

C

85 85 85 85 °C

I

F(RMS)

63 110 134 173 A

I

FSM

50 Hz 570 1200 1700 2000

A

60 Hz 600 1250 1800 2100

I

2

t

50 Hz 1630 7100 14 500 20 500

A2s

60 Hz 1500 6450 13 500 18 600

I

2

√t 16 300 70 700 148 700 204 300 A2√s

V

RRM

100 to 1200 V

T

J

- 40 to 150 °C

T40HF..., T70HF..., T85HF..., T110HF... Series

Vishay Semiconductors

Power Rectifier Diodes

(T-Modules), 40 A to 110 A

ELECTRICAL SPECIFICATIONS

VOLTAGE RATINGS

TYPE NUMBER

VOLTAGE

CODE

V

RRM

, MAXIMUM REPETITIVE

PEAK REVERSE VOLTAGE

V

RSM

, MAXIMUM NON-REPETITIVE

PEAK REVERSE VOLTAGE

V

I

RRM

MAXIMUM

AT T

J

= 25 °C

μA

T40HF... T70HF... T85HF... T110HF...

10 100 150

100

20 200 300

40 400 500

60 600 700

80 800 900

100 1000 1100

120 1200 1300

FORWARD CONDUCTION

PARAMETER SYMBOL TEST CONDITIONS T40HF T70HF T85HF T110HF UNITS

Maximum average forward current at case temperature

I

F(AV)

180° conduction, half sine wave

40 70 85 110 A

85 85 85 85 °C

Maximum RMS forward current I

F(RMS)

63 110 134 173 A

Maximum peak, one-cycle forward, non-repetitive surge current

I

FSM

t = 10 ms

No voltage reapplied

Sinusoidal half wave, initial T

J

=

T

J

maximum

570 1200 1700 2000

A

t = 8.3 ms 600 1250 1800 2100

t = 10 ms

100 % V

RRM

reapplied

480 1000 1450 1700

t = 8.3 ms 500 1050 1500 1780

Maximum I

2

t for fusing I2t

t = 10 ms

No voltage reapplied

1630 7100 14 500 20 500

A2s

t = 8.3 ms 1500 6450 13 500 18 600

t = 10 ms

100 % V

RRM

reapplied

1150 5000 10 500 14 500

t = 8.3 ms 1050 4570 9600 13 200

Maximum I

2

√t for fusing I2√t t = 0.1 ms to 10 ms, no voltage reapplied 16 300 70 700 148 700 204 300 A2√s

Low level value of threshold voltage

V

F(TO)1

(16.7 % x π x I

F(AV)

< I < π x I

F(AV)

),

T

J

maximum

0.66 0.76 0.68 0.68

V

High level value of threshold voltage

V

F(TO)2

(I > π x I

F(AV)

), TJ maximum 0.84 0.95 0.90 0.86

Low level value of forward slope resistance

r

f1

(16.7 % x π x I

F(AV)

< I < π x I

F(AV)

),

T

J

maximum

4.3 2.4 1.76 1.56

mΩ

High level value of forward slope resistance

r

f2

(I > π x I

F(AV)

), TJ maximum 3.1 1.7 1.08 1.12

Maximum forward voltage drop V

FM

IFM = π x I

F(AV)

, TJ = 25 °C,

t

p

= 400 μs square pulse

Average power = V

F(TO)

x I

F(AV)

+ rf x (I

F(RMS)

)

2

1.30 1.35 1.27 1.35 V

T40HF..., T70HF..., T85HF..., T110HF... Series

Power Rectifier Diodes

(T-Modules), 40 A to 110 A

Vishay Semiconductors

Note

(1)

A mounting compound is recommended and the torque should be rechecked after a period of about 3 hours to allow for the spread of the compound

Note

• Table shows the increment of thermal resistance R

thJC

when devices operate at different conduction angles than DC

BLOCKING

PARAMETER SYMBOL TEST CONDITIONS T40HF T70HF T85HF T110HF UNITS

Maximum peak reverse leakage current

I

RRM

TJ = 150 °C 15 15 20 20 mA

RMS isolation voltage V

ISOL

50 Hz, circuit to base, all terminals shorted T

J

= 25 °C, t = 1 s

3500 3500 3500 3500 V

THERMAL AND MECHANICAL SPECIFICATIONS

PARAMETER SYMBOL TEST CONDITIONS

VALUES

UNITS

T40HF T70HF T85HF T110HF

Maximum junction operating and storage temperature range

T

J

, T

Stg

- 40 to 150 °C

Maximum thermal resistance, junction to case per junction

R

thJC

DC operation 1.36 0.69 0.62 0.47

K/W

Maximum thermal resistance, case to heatsink

R

thCS

Mounting surface smooth, flat and greased

0.2

Mounting torque, ± 10 %

to heatsink

Non-lubricated threads

M3.5 mounting screws

(1)

1.3 ± 10 % Nm

terminals M5 screw terminals 3 ± 10 %

Approximate weight See dimensions - link at the end of datasheet 54 g

Case style T-module (D-55)

ΔR CONDUCTION PER JUNCTION

DEVICES

SINUSOIDAL CONDUCTION AT T

J

MAXIMUM RECTANGULAR CONDUCTION AT TJ MAXIMUM

UNITS

180° 120° 90° 60° 30° 180° 120° 90° 60° 30°

T40HF... 0.12 0.14 0.18 0.27 0.46 0.09 0.15 0.20 0.28 0.46

K/W

T70HF... 0.09 0.11 0.14 0.20 0.35 0.07 0.11 0.15 0.21 0.35

T85HF... 0.08 0.09 0.12 0.18 0.31 0.06 0.10 0.13 0.19 0.31

T110HF... 0.05 0.07 0.09 0.14 0.23 0.05 0.08 0.10 0.15 0.24

T40HF..., T70HF..., T85HF..., T110HF... Series

Vishay Semiconductors

Power Rectifier Diodes

(T-Modules), 40 A to 110 A

Fig. 1 - Current Ratings Characteristics Fig. 2 - Current Ratings Characteristics

Fig. 3 - Forward Power Loss Characteristics

Fig. 4 - Forward Power Loss Characteristics

60

70

80

90

100

110

120

130

140

150

01020304050

30°

60°

90°

120°

180°

Maximum Allowable Case Temperature (°C)

Cond uct ion Ang le

Av e ra g e Forwa rd Curre nt (A )

T4 0HF. . Se ri e s R (DC) = 1.36 K/W

thJC

60

70

80

90

100

110

120

130

140

150

0 10203040506070

DC

30°

60°

90°

120°

180°

Maximum Allowable Case Temperature (°C)

Conduc tion Period

Average Forward Current (A)

T4 0H F. . Se r ie s R (DC) = 1.36 K/W

thJC

0 255075100125150

Maximum Allowable Ambient Temperature (°C)

R

= 0

.

5

K

/

W

D

e

lt

a

R

thS

A

1

K

/

W

1

.

5

K

/

W

2

K

/

W

3

K

/

W

5

K

/

W

7

K

/

W

1

0

K

/

W

0

5

10

15

20

25

30

35

40

45

0 5 10 15 20 25 30 35 40

Average Forward Current (A)

RM S Li m it

Maximum Average Forward Power Loss (W)

Cond uction Angle

180° 120°

90° 60° 30°

T4 0 HF. . Se r i e s T = 150°C

J

0255075100125150

Maximum Allowable Ambient Temperature (°C)

1

0

K

/

W

5

K

/

W

2

K

/

W

1

.

5

K

/

W

1

K

/

W

R

=

0

.

5

K

/

W

- D e

l

t

a

R

t

h

S

A

7

K

/

W

3

K

/

W

0

10

20

30

40

50

60

70

0 10203040506070

DC 180° 120°

90°

60°

30°

RM S Lim it

Cond uc tion Period

Average Forward Current (A)

Maximum Average Forward Power Loss (W)

T40HF.. Series T = 150°C

J