VISHAY T1090P Technical data

T1090P

E

B

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Vishay Semiconductors

Silicon NPN Phototransistor

FEATURES

• Package type: chip

• Package form: single chip

• Dimensions (L x W x H in mm): 0.53 x 0.53 x

0.185

• High photo sensitivity

• High radiant sensitivity

• Suitable for visible and near infrared radiation

• Fast response times

21650

DESCRIPTION

T1090P is a silicon NPN phototransistor chip with high
radiant sensitivity, sensitive to visible and near infrared
radiation.

GENERAL INFORMATION

The datasheet is based on Vishay optoelectronics sample testing under certain predetermined and assumed conditions, and is
provided for illustration purpose only. Customers are encouraged to perform testing in actual proposed packaged and used
conditions. Vishay optoelectronics die products are tested using Vishay optoelectronics based quality assurance procedures and
are manufactured using Vishay optoelectronics established processes. Estimates such as those described and set forth in this
datasheet for semiconductor die will vary depending on a number of packaging, handling, use, and other factors. Therefore sold
die may not perform on an equivalent basis to standard package products.

• Compliant to RoHS directive 2002/95/EC and in
accordance to WEEE 2002/96/EC

APPLICATIONS

• Detector in electronic control and drive circuits

PRODUCT SUMMARY

COMPONENT Ica (mA) ϕ (deg) λ

T1090P 0.43 to 0.77 ± 60 440 to 1070

Note

Test condition see table “Basic Characteristics”

0.1

(nm)

ORDERING INFORMATION

ORDERING CODE PACKAGING REMARKS PACKAGE FORM

T1090P-SD-F

Note

MOQ: minimum order quantity

Wafer sawn on foil with disco

frame

MOQ: 50 000 pcs Chip

ABSOLUTE MAXIMUM RATINGS

PARAMETER TEST CONDITION SYMBOL VALUE UNIT

Collector emitter voltage V

Emitter collector voltage V

Collector current I

Junction temperature T

Operating temperature range T

Storage temperature range T

Storage temperature range on foil T

Note

T

= 25 °C, unless otherwise specified

amb

Document Number: 81123 For technical questions, contact: [e-mail]
Rev. 1.4, 29-Mar-10 1

CEO

ECO

C

j

amb

stg1

stg2

70 V

5V

50 mA

100 °C

- 40 to + 100 °C

- 40 to + 100 °C

- 40 to + 50 °C

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T1090P

Vishay Semiconductors

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BASIC CHARACTERISTICS

(1)

Silicon NPN Phototransistor

PARAMETER TEST CONDITION SYMBOL MIN. TYP. MAX. UNIT

Collector emitter breakdown voltage I

Collector emitter dark current V

Collector light current
(Vishay selection type

3

)

= 1 mW/cm2, λ = 950 nm,

E

e

Wavelength of peak sensitivity λ

Range of spectral bandwidth λ

Rise time V

Fall time V

= 5 V, IC = 2 mA, RL = 100 Ω tr, t

CE

= 5 V, IC = 2 mA, RL = 100 Ω tr, t

CE

= 1 mA V

C

= 20 V, E = 0 I

CE

V

= 5 V

CE

(BR)CEO

CEO

I

ca

p

0.1

f

f

70 V

1nA

0.43 0.77 mA

825 nm

440 to 1070 nm

4.3 µs

7.7 µs

Note

(1)

T

= 25 °C, unless otherwise specified

amb

(2)

The measurements are based on samples of die which are mounted on a TO-header without resin coating

(3)

Specific selection types possible

BASIC CHARACTERISTICS

T

= 25 °C, unless otherwise specified

amb

100

90

80

70

60

50

40

30

- Rise/Fall Time (µs)

f

t

/t
t

20599

r

r

20

10

0

0 250 500 750 1000 1250 1500 1750 2000

RL = 100 Ω

t

f

- Collector Current (µA)

I

C

Fig. 1 - Rise/Fall Time vs. Collector Current

MECHANICAL DIMENSIONS

PARAMETER SYMBOL MIN. TYP. MAX. UNIT

Length of chip edge (x-direction) L

Length of chip edge (y-direction) L

x

y

Die height H 0.185 mm

Diameter of bond pad base d 0.1 mm

Bond pad emitter a x b 0.1 x 0.1 mm

ADDITIONAL INFORMATION

(1)

Frontside metallization, base (B), emitter (E) Aluminum

Backside metallization, collector AuSb

Dicing Sawing

Die bonding technology Epoxy bonding

Note

(1)

All chips are checked in accordance with the Vishay Semiconductor, specification of visual inspection FVOV6870.
The visual inspection shall be made in accordance with the “specification of visual inspection as referenced”. The visual inspection of chip
backside is performed with stereo microscope with incident light and 40x to 80x magnification.
The quality inspection (final visual inspection) is performed by production. An additional visual inspection step as special release procedure
by QM is not installed.

www.vishay.com For technical questions, contact: [e-mail]
2 Rev. 1.4, 29-Mar-10

0.52 mm

0.52 mm

2

Document Number: 81123