Vishay SUP85N10-10P Schematic

PRODUCT SUMMARY

T O-220AB

Top View

GD S

Ordering Information:

SUP85N10-10P-GE3 (Lead (Pb)-free and Halogen-free)

VDS (V) R

100

0.010 at V

(Ω)I

DS(on)

= 10 V

GS

N-Channel 100 V (D-S) MOSFET

FEATURES

(A) Qg (Typ.)

D

85

d

77

• Halogen-free According to IEC 61249-2-21

Definition

• TrenchFET® Power MOSFET

• 100 % R

and UIS Tested

g

• Compliant to RoHS Directive 2002/95/EC

APPLICATIONS

• Industrial

G

SUP85N10-10P

Vishay Siliconix

D

S

N-Channel MOSFET

ABSOLUTE MAXIMUM RATINGS (TC = 25 °C, unless otherwise noted)

Parameter Symbol Limit Unit

Drain-Source Voltage

Gate-Source Voltage

Continuous Drain Current (T

= 175 °C)

J

Pulsed Drain Current

Avalanche Current

Single Avalanche Energy

Maximum Power Dissipation

a

Operating Junction and Storage Temperature Range

= 25 °C

T

C

= 70 °C

T

C

L = 0.1 mH

TC = 25 °C

T

= 25 °C

A

V

DS

V

GS

I

D

I

DM

I

AS

E

AS

P

c

D

, T

T

J

stg

100

± 20

d

85

83

240

60

180 mJ

b

227

3.75

W

- 55 to 150 °C

V

A

THERMAL RESISTANCE RATINGS

Parameter Symbol Limit Unit

Junction-to-Ambient (PCB Mount)

Junction-to-Case (Drain)

c

Notes: a. Duty cycle ≤ 1 %. b. See SOA curve for voltage derating. c. When mounted on 1" square PCB (FR-4 material). d. Package limited.

R

thJA

R

thJC

40

0.55

°C/W

Document Number: 64833 S11-2239-Rev. B, 14-Nov-11

THE PRODUCTS DESCRIBED HEREIN AND THIS DOCUMENT ARE SUBJECT TO SPECIFIC DISCLAIMERS, SET FORTH AT www.vishay.com/doc?91000

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1

This document is subject to change without notice.

SUP85N10-10P

Vishay Siliconix

SPECIFICATIONS (TJ = 25 °C, unless otherwise noted)

Parameter Symbol Test Conditions Min. Typ. Max. Unit

Static

Drain-Source Breakdown Voltage

Gate Threshold Voltage

Gate-Body Leakage

Zero Gate Voltage Drain Current

On-State Drain Current

a

Drain-Source On-State Resistance

Forward Transconductance

Dynamic

b

a

Input Capacitance

Reverse Transfer Capacitance

Total Gate Charge

Gate-Source Charge

Gate-Drain Charge

c

Gate Resistance

Tur n -O n De l a y T i m e

Rise Time

c

Turn-Off Delay Time

Fall Time

c

a

V

DS

V

GS(th)

I

GSS

I

DSS

I

V

D(on)

R

DS(on)

g

fs

C

iss

C

oss

C

rss

Q

g

Q

gs

Qgd

R

g

t

d(on)

t

r

t

d(off)

t

f

Drain-Source Body Diode Characteristics TC = 25 °C

Continuous Current

Pulsed Current

Forward Voltage

a

Reverse Recovery Time

Peak Reverse Recovery Current

Reverse Recovery Charge

I

S

I

SM

V

SD

t

rr

I

RM(REC)

Q

rr

Notes: a. Pulse test; pulse width ≤ 300 µs, duty cycle ≤ 2 %. b. Guaranteed by design, not subject to production testing. c. Independent of operating temperature.

Stresses beyond those listed under “Absolute Maximum Ratings” may cause permanent damage to the device. These are stress ratings only, and functional operation of the device at these or any other conditions beyond those indicated in the operational sections of the specifications is not implied. Exposure to absolute maximum rating conditions for extended periods may affect device reliability.

VDS = 0 V, ID = 250 µA

V

= VGS, ID = 250 µA

DS

VDS = 0 V, VGS = ± 20 V

V

= 100 V, V

DS

V

= 100 V, V

DS

V

= 100 V, V

DS

≥ 10 V, V

DS

V

= 10 V, ID = 20 A

GS

V

= 10 V, ID = 20 A, TJ = 125 °C

GS

= 0 V, TJ = 125 °C

GS

= 0 V, TJ = 150 °C

GS

VDS = 15 V, ID = 20 A

VGS = 0 V, V

VDS = 50 V, V

= 50 V, f = 1 MHz

DS

= 10 V, ID = 75 A

GS

f = 1 MHz 0.25 1.2 2.4 Ω

V

= 50 V, RL = 0.67 Ω

DD

≅ 75 A, V

I

D

b

IF = 5 A, V

= 10 V, Rg = 1 Ω

GEN

GS

IF = 5 A, dI/dt = 100 A/µs

= 0 V

= 10 V

= 0 V

100

2.5 4.5

± 250 nA

1

50

250

120 A

0.0080 0.0100

0.0146 0.0185

70 S

4660

315

150

77 120

25

20

15 25

12 20

25 40

815

85

240

0.8 1.5 V

74 115 ns

6.7 10 A

250 400 nC

V

µA

Ω

pFOutput Capacitance

nC

ns

A

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THE PRODUCTS DESCRIBED HEREIN AND THIS DOCUMENT ARE SUBJECT TO SPECIFIC DISCLAIMERS, SET FORTH AT www.vishay.com/doc?91000

This document is subject to change without notice.

Document Number: 64833

S11-2239-Rev. B, 14-Nov-11

TYPICAL CHARACTERISTICS (25 °C, unless otherwise noted)

0

20

40

60

80

100

120

012345

VGS=10V thru 7 V

VGS=6V

V

DS

- Drain-to-Source Voltage (V)

- Drain Current (A)I

D

0

2

4

6

8

10

020406080

ID=16A

VDS=75V

VDS=50V

VDS=25V

- Gate-to-Source Voltage (V)

Qg- Total Gate Charge (nC)

V

GS

10

8

6

4

- Drain Current (A)I

D

2

0

Output Characteristics

SUP85N10-10P

Vishay Siliconix

TC= 25 °C

TC= 125 °C

02468 10

- Gate-to-Source Voltage (V)

V

GS

Transfer Characteristics

TC= - 55 °C

150

120

90

TC= 25 °C

60

- Transconductance (S)

fs

g

30

0

0 1020304050

TC= - 55 °C

ID- Drain Current (A)

Transconductance

6000

C

5000

4000

3000

2000

C - Capacitance (pF)

1000

C

rss

0

0 20406080 100

iss

C

oss

VDS- Drain-to-Source Voltage (V)

Capacitance

Document Number: 64833 S11-2239-Rev. B, 14-Nov-11

THE PRODUCTS DESCRIBED HEREIN AND THIS DOCUMENT ARE SUBJECT TO SPECIFIC DISCLAIMERS, SET FORTH AT www.vishay.com/doc?91000

0.020

0.015

TC= 125 °C

- On-Resistance (Ω)

DS(on)

R

0.010

0.005

0.000

This document is subject to change without notice.

VGS=10V

020406080 100 120

ID- Drain Current (A)

On-Resistance vs. Drain Current

Gate Charge

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Vishay SUP85N10-10P Schematic [ru]