Vishay SUP85N10-10P Schematic [ru]

PRODUCT SUMMARY

T O-220AB

Top View

GD S

Ordering Information:

SUP85N10-10P-GE3 (Lead (Pb)-free and Halogen-free)

VDS (V) R

100

0.010 at V

(Ω)I

DS(on)

= 10 V

GS

N-Channel 100 V (D-S) MOSFET

FEATURES

(A) Qg (Typ.)

D

85

d

77

• Halogen-free According to IEC 61249-2-21

Definition

• TrenchFET® Power MOSFET

• 100 % R

and UIS Tested

g

• Compliant to RoHS Directive 2002/95/EC

APPLICATIONS

• Industrial

G

SUP85N10-10P

Vishay Siliconix

D

S

N-Channel MOSFET

ABSOLUTE MAXIMUM RATINGS (TC = 25 °C, unless otherwise noted)

Parameter Symbol Limit Unit

Drain-Source Voltage

Gate-Source Voltage

Continuous Drain Current (T

= 175 °C)

J

Pulsed Drain Current

Avalanche Current

Single Avalanche Energy

Maximum Power Dissipation

a

a

Operating Junction and Storage Temperature Range

= 25 °C

T

C

= 70 °C

T

C

L = 0.1 mH

TC = 25 °C

T

= 25 °C

A

V

DS

V

GS

I

D

I

DM

I

AS

E

AS

P

c

D

, T

T

J

stg

100

± 20

d

85

83

240

60

180 mJ

b

227

3.75

W

- 55 to 150 °C

V

A

THERMAL RESISTANCE RATINGS

Parameter Symbol Limit Unit

Junction-to-Ambient (PCB Mount)

Junction-to-Case (Drain)

c

Notes:
a. Duty cycle ≤ 1 %.
b. See SOA curve for voltage derating.
c. When mounted on 1" square PCB (FR-4 material).
d. Package limited.

R

thJA

R

thJC

40

0.55

°C/W

Document Number: 64833
S11-2239-Rev. B, 14-Nov-11

THE PRODUCTS DESCRIBED HEREIN AND THIS DOCUMENT ARE SUBJECT TO SPECIFIC DISCLAIMERS, SET FORTH AT www.vishay.com/doc?91000

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1

This document is subject to change without notice.

SUP85N10-10P

Vishay Siliconix

SPECIFICATIONS (TJ = 25 °C, unless otherwise noted)

Parameter Symbol Test Conditions Min. Typ. Max. Unit

Static

Drain-Source Breakdown Voltage

Gate Threshold Voltage

Gate-Body Leakage

Zero Gate Voltage Drain Current

On-State Drain Current

a

Drain-Source On-State Resistance

Forward Transconductance

Dynamic

b

a

Input Capacitance

Reverse Transfer Capacitance

Total Gate Charge

Gate-Source Charge

Gate-Drain Charge

c

c

c

Gate Resistance

Tur n -O n De l a y T i m e

Rise Time

c

Turn-Off Delay Time

Fall Time

c

c

c

a

V

DS

V

GS(th)

I

GSS

I

DSS

I

V

D(on)

R

DS(on)

g

fs

C

iss

C

oss

C

rss

Q

g

Q

gs

Qgd

R

g

t

d(on)

t

r

t

d(off)

t

f

Drain-Source Body Diode Characteristics TC = 25 °C

Continuous Current

Pulsed Current

Forward Voltage

a

Reverse Recovery Time

Peak Reverse Recovery Current

Reverse Recovery Charge

I

S

I

SM

V

SD

t

rr

I

RM(REC)

Q

rr

Notes:
a. Pulse test; pulse width ≤ 300 µs, duty cycle ≤ 2 %.
b. Guaranteed by design, not subject to production testing.
c. Independent of operating temperature.

Stresses beyond those listed under “Absolute Maximum Ratings” may cause permanent damage to the device. These are stress ratings only, and functional operation
of the device at these or any other conditions beyond those indicated in the operational sections of the specifications is not implied. Exposure to absolute maximum
rating conditions for extended periods may affect device reliability.

VDS = 0 V, ID = 250 µA

V

= VGS, ID = 250 µA

DS

VDS = 0 V, VGS = ± 20 V

V

= 100 V, V

DS

V

= 100 V, V

DS

V

= 100 V, V

DS

≥ 10 V, V

DS

V

= 10 V, ID = 20 A

GS

V

= 10 V, ID = 20 A, TJ = 125 °C

GS

GS

= 0 V, TJ = 125 °C

GS

= 0 V, TJ = 150 °C

GS

GS

VDS = 15 V, ID = 20 A

VGS = 0 V, V

VDS = 50 V, V

= 50 V, f = 1 MHz

DS

= 10 V, ID = 75 A

GS

f = 1 MHz 0.25 1.2 2.4 Ω

V

= 50 V, RL = 0.67 Ω

DD

≅ 75 A, V

I

D

b

IF = 5 A, V

= 10 V, Rg = 1 Ω

GEN

GS

IF = 5 A, dI/dt = 100 A/µs

= 0 V

= 10 V

= 0 V

100

2.5 4.5

± 250 nA

1

50

250

120 A

0.0080 0.0100

0.0146 0.0185

70 S

4660

315

150

77 120

25

20

15 25

12 20

25 40

815

85

240

0.8 1.5 V

74 115 ns

6.7 10 A

250 400 nC

V

µA

Ω

pFOutput Capacitance

nC

ns

A

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THE PRODUCTS DESCRIBED HEREIN AND THIS DOCUMENT ARE SUBJECT TO SPECIFIC DISCLAIMERS, SET FORTH AT www.vishay.com/doc?91000

This document is subject to change without notice.

Document Number: 64833

S11-2239-Rev. B, 14-Nov-11

TYPICAL CHARACTERISTICS (25 °C, unless otherwise noted)

0

20

40

60

80

100

120

012345

VGS=10V thru 7 V

VGS=6V

V

DS

- Drain-to-Source Voltage (V)

- Drain Current (A)I

D

0

2

4

6

8

10

020406080

ID=16A

VDS=75V

VDS=50V

VDS=25V

- Gate-to-Source Voltage (V)

Qg- Total Gate Charge (nC)

V

GS

10

8

6

4

- Drain Current (A)I

D

2

0

Output Characteristics

SUP85N10-10P

Vishay Siliconix

TC= 25 °C

TC= 125 °C

02468 10

- Gate-to-Source Voltage (V)

V

GS

Transfer Characteristics

TC= - 55 °C

150

120

90

TC= 25 °C

60

- Transconductance (S)

fs

g

30

0

0 1020304050

TC= - 55 °C

ID- Drain Current (A)

Transconductance

6000

C

5000

4000

3000

2000

C - Capacitance (pF)

1000

C

rss

0

0 20406080 100

iss

C

oss

VDS- Drain-to-Source Voltage (V)

Capacitance

Document Number: 64833
S11-2239-Rev. B, 14-Nov-11

THE PRODUCTS DESCRIBED HEREIN AND THIS DOCUMENT ARE SUBJECT TO SPECIFIC DISCLAIMERS, SET FORTH AT www.vishay.com/doc?91000

0.020

0.015

TC= 125 °C

- On-Resistance (Ω)

DS(on)

R

0.010

0.005

0.000

This document is subject to change without notice.

VGS=10V

020406080 100 120

ID- Drain Current (A)

On-Resistance vs. Drain Current

Gate Charge

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SUP85N10-10P

0.00

0.01

0.02

0.03

0.04

0.05

345678 910

TJ= 25 °C

TJ= 125 °C

- On-Resistance (Ω)R

DS(on)

VGS- Gate-to-Source Voltage (V)

100

106

112

118

124

130

- 50 - 25 0 25 50 75 100 125 150

BVDSS (V)

ID=1mA

T

J

-Junction Temperature (°C)

0.0 0.2 0.4 0.6 0.8 1.0 1.2

1

0.01

0.001

0.1

10

100

TJ= - 50 °C

TJ= 150 °C

TJ= 25 °C

- On-Resistance (Ω)

R

DS(on)

VGS- Gate-to-Source Voltage (V)

- 1.7

- 1.2

- 0.7

- 0.2

0.3

0.8

- 50 - 25 0 25 50 75 100 125 150

ID= 250 µA

ID=1mA

Variance (V)V

GS(th)

TJ- Temperature (°C)

tAV (s)

(A)I

DAV

100

10

1

TJ= 25 °C

TJ= 150 °C

10

-3

10

-2

110

-1

10

-4

10

-5

Vishay Siliconix

TYPICAL CHARACTERISTICS (25 °C, unless otherwise noted)

2.1

ID=20A

1.7

(Normalized)- On-Resistance

1.3

0.9

DS(on)

R

0.5

- 50 - 25 0 25 50 75 100 125 150

T

J

On-Resistance vs. Junction Temperature

VGS=10V

-Junction Temperature (°C)

Source-Drain Diode Forward Voltage

On-Resistance vs. Gate-to-Source Voltage

Drain Source Breakdown Voltage vs. Junction Temperature

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THE PRODUCTS DESCRIBED HEREIN AND THIS DOCUMENT ARE SUBJECT TO SPECIFIC DISCLAIMERS, SET FORTH AT www.vishay.com/doc?91000

Threshold Voltage

Single Pulse Avalanche Current Capability vs. Time

Document Number: 64833

S11-2239-Rev. B, 14-Nov-11

This document is subject to change without notice.

TYPICAL CHARACTERISTICS (25 °C, unless otherwise noted)

0.01

0.1

1

10

100

1000

0.1 1 10 100

V

DS

- Drain-to-Source Voltage (V)

* V

GS

> minimum VGSat which R

DS(on)

is specified

- Drain Current (A)
I

D

TC= 25 °C

Single Pulse

100 µs

1 ms

10 ms

100 ms, DC

Limited byR

DS(on)

*

0

60

120

180

240

300

0 25 50 75 100 125 150

TC- Case Temperature (°C)

Power (W)

Safe Operating Area

120

SUP85N10-10P

Vishay Siliconix

100

80

Package Limited

60

- Drain Current (A)
40

D

I

20

0

0 25 50 75 100 125 150

- Case Temperature (°C)

T

C

Power Derating, Junction-to-Case

* The power dissipation PD is based on T

= 150 °C, using junction-to-case thermal resistance, and is more useful in settling the upper

J(max.)

Current Derating*

dissipation limit for cases where additional heatsinking is used. It is used to determine the current rating, when this rating falls below the package
limit.

Document Number: 64833
S11-2239-Rev. B, 14-Nov-11

THE PRODUCTS DESCRIBED HEREIN AND THIS DOCUMENT ARE SUBJECT TO SPECIFIC DISCLAIMERS, SET FORTH AT www.vishay.com/doc?91000

www.vishay.com

5

This document is subject to change without notice.

SUP85N10-10P

1

0.1

0.01

Duty Cycle = 0.5

Square WavePulse Duration (s)

Normalized Effective Transient

Thermal Impedance

10

-3

10

-2

110

-1

10

-4

0.02

Single Pulse

0.1

0.2

0.05

Vishay Siliconix

TYPICAL CHARACTERISTICS (25 °C, unless otherwise noted)

Normalized Thermal Transient Impedance, Junction-to-Case

Vishay Siliconix maintains worldwide manufacturing capability. Products may be manufactured at one of several qualified locations. Reliability data for Silicon
Technology and Package Reliability represent a composite of all qualified locations. For related documents such as package/tape drawings, part marking, and
reliability data, see www.vishay.com/ppg?64833

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THE PRODUCTS DESCRIBED HEREIN AND THIS DOCUMENT ARE SUBJECT TO SPECIFIC DISCLAIMERS, SET FORTH AT www.vishay.com/doc?91000

.

This document is subject to change without notice.

Document Number: 64833

S11-2239-Rev. B, 14-Nov-11

www.vishay.com

M

*

3

2

1

L

L(1)

D

H(1)

Q

Ø P

A

F

J(1)

b(1)

e(1)

e

E

b

C

Package Information

Vishay Siliconix

TO-220AB

MILLIMETERS INCHES

DIM. MIN. MAX. MIN. MAX.

A 4.25 4.65 0.167 0.183

b 0.69 1.01 0.027 0.040

b(1) 1.20 1.73 0.047 0.068

c 0.36 0.61 0.014 0.024

D 14.85 15.49 0.585 0.610

E 10.04 10.51 0.395 0.414

e 2.41 2.67 0.095 0.105

e(1) 4.88 5.28 0.192 0.208

F 1.14 1.40 0.045 0.055

H(1) 6.09 6.48 0.240 0.255

J(1) 2.41 2.92 0.095 0.115

L 13.35 14.02 0.526 0.552

L(1) 3.32 3.82 0.131 0.150

Ø P 3.54 3.94 0.139 0.155

Q 2.60 3.00 0.102 0.118

ECN: X12-0208-Rev. N, 08-Oct-12
DWG: 5471

Notes

* M = 1.32 mm to 1.62 mm (dimension including protrusion)
Heatsink hole for HVM

• Xi’an and Mingxin actual photo

ARE SUBJECT TO SPECIFIC DISCLAIMERS, SET FORTH AT www.vishay.com/doc?91000

Revison: 08-Oct-12

THIS DOCUMENT IS SUBJECT TO CHANGE WITHOUT NOTICE. THE PRODUCTS DESCRIBED HEREIN AND THIS DOCUMENT

For technical questions, contact: [e-mail]

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Document Number: 71195

Legal Disclaimer Notice

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Vishay

Disclaimer

ALL PRODUCT, PRODUCT SPECIFICATIONS AND DATA ARE SUBJECT TO CHANGE WITHOUT NOTICE TO IMPROVE
RELIABILITY, FUNCTION OR DESIGN OR OTHERWISE.

Vishay Intertechnology, Inc., its affiliates, agents, and employees, and all persons acting on its or their behalf (collectively,
“Vishay”), disclaim any and all liability for any errors, inaccuracies or incompleteness contained in any datasheet or in any other
disclosure relating to any product.

Vishay makes no warranty, representation or guarantee regarding the suitability of the products for any particular purpose or
the continuing production of any product. To the maximum extent permitted by applicable law, Vishay disclaims (i) any and all
liability arising out of the application or use of any product, (ii) any and all liability, including without limitation special,
consequential or incidental damages, and (iii) any and all implied warranties, including warranties of fitness for particular
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Statements regarding the suitability of products for certain types of applications are based on Vishay’s knowledge of typical
requirements that are often placed on Vishay products in generic applications. Such statements are not binding statements
about the suitability of products for a particular application. It is the customer’s responsibility to validate that a particular
product with the properties described in the product specification is suitable for use in a particular application. Parameters
provided in datasheets and/or specifications may vary in different applications and performance may vary over time. All
operating parameters, including typical parameters, must be validated for each customer application by the customer’s
technical experts. Product specifications do not expand or otherwise modify Vishay’s terms and conditions of purchase,
including but not limited to the warranty expressed therein.

Except as expressly indicated in writing, Vishay products are not designed for use in medical, life-saving, or life-sustaining
applications or for any other application in which the failure of the Vishay product could result in personal injury or death.
Customers using or selling Vishay products not expressly indicated for use in such applications do so at their own risk. Please
contact authorized Vishay personnel to obtain written terms and conditions regarding products designed for such applications.

No license, express or implied, by estoppel or otherwise, to any intellectual property rights is granted by this document or by
any conduct of Vishay. Product names and markings noted herein may be trademarks of their respective owners.

Material Category Policy

Vishay Intertechnology, Inc. hereby certifies that all its products that are identified as RoHS-Compliant fulfill the
definitions and restrictions defined under Directive 2011/65/EU of The European Parliament and of the Council
of June 8, 2011 on the restriction of the use of certain hazardous substances in electrical and electronic equipment
(EEE) - recast, unless otherwise specified as non-compliant.

Please note that some Vishay documentation may still make reference to RoHS Directive 2002/95/EC. We confirm that
all the products identified as being compliant to Directive 2002/95/EC conform to Directive 2011/65/EU.

Vishay Intertechnology, Inc. hereby certifies that all its products that are identified as Halogen-Free follow Halogen-Free
requirements as per JEDEC JS709A standards. Please note that some Vishay documentation may still make reference
to the IEC 61249-2-21 definition. We confirm that all the products identified as being compliant to IEC 61249-2-21
conform to JEDEC JS709A standards.

Revision: 02-Oct-12

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Document Number: 91000