VISHAY SUM110N04-2m7H Technical data
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SPICE Device Model SUM110N04-2m7H
Vishay Siliconix
N-Channel 40-V (D-S) 175°C MOSFET
CHARACTERISTICS
• N-Channel Vertical DMOS
• Macro Model (Subcircuit Model)
• Level 3 MOS
DESCRIPTION
The attached spice model describes the typical electrical
characteristics of the n-channel vertical DMOS. The subcircuit
model is extracted and optimized over the −55 to 125°C
temperature ranges under the pulsed 0 to 10V gate drive. The
saturated output impedance is best fit at the gate bias near the
threshold voltage.
SUBCIRCUIT MODEL SCHEMATIC
• Apply for both Linear and Switching Application
• Accurate over the −55 to 125°C Temperature Range
• Model the Gate Charge, Transient, and Diode Reverse Recovery
Characteristics
A novel gate-to-drain feedback capacitance network is used to
model the gate charge characteristics while avoiding convergence
difficulties of the switched C
are optimized to provide a best fit to the measured electrical data
and are not intended as an exact physical interpretation of the
device.
model. All model parameter values
gd
This document is intended as a SPICE modeling guideline and does not constitute a commercial product data sheet. Designers should refer to the appropriate
data sheet of the same number for guaranteed specification limits.
Document Number: 72933 www.vishay.com
09-Jun-04 1
SPICE Device Model SUM110N04-2m7H
Vishay Siliconix
SPECIFICATIONS (TJ = 25°C UNLESS OTHERWISE NOTED)
Parameter Symbol Test Conditions
Static
Gate Threshold Voltage V
On-State Drain Current
a
Drain-Source On-State Resistancea r
Forward Transconductancea g
Forward Voltage a V
Dynamic b
Input Capacitance C
Output Capacitance C
Reverse Transfer Capacitance C
Total Gate Chargec Q
Gate-Source Chargec Q
Gate-Drain Chargec Q
Turn-On Delay Time c t
Rise Time c t
Turn-Off Delay Time c t
Fall Time c t
Notes
a. Pulse test; pulse width ≤ 300 µs, duty cycle ≤ 2%.
b. Guaranteed by design, not subject to production testing.
c. Independent of operating temperature.
GS(th)
I
V
D(on)
= VGS, ID = 250 µA
V
DS
= 5 V, VGS = 10 V 1170 A
DS
VGS = 10 V, ID = 30 A 0.0022 0.0022
DS(on)
V
fs
I
SD
12450 15720
iss
1429 1400
oss
rss
262 250
g
95 95
gs
gd
43 50
d(on)
101 150
r
75 70
d(off)
f
VGS = 10 V, ID = 30 A, TJ = 125°C 0.0031
= 10 V, ID = 30 A, TJ = 175°C 0.0036
V
GS
= 15 V, ID = 30 A 87 S
DS
= 85 A, VGS = 0 V 1 1.1 V
S
V
= 0 V, VDS = 25 V, f = 1 MHz
GS
V
= 30 V, VGS = 10 V, ID = 110 A
DS
= 30 V, RL = 0.27 Ω
V
DD
I
≅ 110 A, V
D
= 10 V, RG = 2.5 Ω
GEN
Simulated
Data
Measured
Data
Unit
3.7 V
Ω
Pf
786 800
NC
57 57
Ns
43 25
www.vishay.com Document Number: 72933
2 09-Jun-04
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