Vishay STPS20L15GPbF Data Sheet
D2PAK
PRODUCT SUMMARY
I
F(AV)
V
R
I
RM
Schottky Rectifier, 20 A
FEATURES
• 125 °C TJ operation (VR < 5 V)
Base
cathode
2
1
N/C
20 A
15 V
600 mA at 100 °C
3
Anode
• Center tap module
• Optimized for OR-ing applications
• Ultralow forward voltage drop
• High frequency operation
• Guard ring for enhanced ruggedness and long
term reliability
• High purity, high temperature epoxy
encapsulation for enhanced mechanical strength and
moisture resistance
• Meets MSL level 1, per J-STD-020, LF maximum peak of
260 °C
• Halogen-free according to IEC 61249-2-21 definition
• Compliant to RoHS directive 2002/95/EC
• AEC-Q101 qualified
DESCRIPTION
The Schottky rectifier module has been optimized for
ultralow forward voltage drop specifically for the OR-ing
of parallel power supplies. The proprietary barrier
technology allows for reliable operation up to 125 °C
junction temperature. Typical applications are in parallel
switching power supplies, converters, reverse battery
protection, and redundant power subsystems.
VS-STPS20L15GPbF
Vishay High Power Products
MAJOR RATINGS AND CHARACTERISTICS
SYMBOL CHARACTERISTICS VALUES UNITS
I
F(AV)
V
I
FSM
V
T
RRM
F
J
Rectangular waveform 20 A
15 V
tp = 5 μs sine 700 A
19 Apk, TJ = 125 °C (typical) 0.25 V
Range - 55 to 125 °C
VOLTAGE RATINGS
PARAMETER SYMBOL TEST CONDITIONS VS-STPS20L15GPbF UNITS
Maximum DC reverse voltage V
Maximum working peak reverse voltage V
R
RWM
TJ = 100 °C 15 V
ABSOLUTE MAXIMUM RATINGS
PARAMETER SYMBOL TEST CONDITIONS VALUES UNITS
Maximum average forward current
See fig. 5
Maximum peak one cycle
non-repetitive surge current
See fig. 7
Non-repetitive avalanche energy E
Repetitive avalanche current I
Document Number: 94326 For technical questions, contact: diodestech@vishay.com
Revision: 16-Mar-10 1
I
F(AV)
I
FSM
50 % duty cycle at TC = 85 °C, rectangular waveform 20
5 μs sine or 3 μs rect. pulse
10 ms sine or 6 ms rect. pulse 330
TJ = 25 °C, IAS = 2 A, L = 6 mH 10 mJ
AS
AR
Current decaying linearly to zero in 1 μs
Frequency limited by T
maximum VA = 1.5 x VR typical
J
Following any rated load
condition and with rated
V
applied
RRM
700
2A
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A
VS-STPS20L15GPbF
Vishay High Power Products
Schottky Rectifier, 20 A
ELECTRICAL SPECIFICATIONS
PARAMETER SYMBOL TEST CONDITIONS TYP. MAX. UNITS
19 A
Forward voltage drop
See fig. 1
V
FM
40 A - 0.52
(1)
19 A
40 A 0.37 0.50
Reverse leakage current
See fig. 2
I
RM
Threshold voltage V
Forward slope resistance r
Maximum junction capacitance C
Typical series inductance L
F (TO)
TJ = 25 °C
(1)
T
= 100 °C - 600
J
TJ = TJ maximum
t
VR = 5 VDC (test signal range 100 kHz to 1 MHz), 25 °C - 2000 pF
T
Measured lead to lead 5 mm from package body 8 - nH
S
Maximum voltage rate of change dV/dt Rated V
T
= 25 °C
J
= 125 °C
T
J
V
= Rated V
R
R
R
-0.41
0.25 0.33
-10
0.182 V
7.6 mΩ
10 000 V/μs
Note
(1)
Pulse width < 300 μs, duty cycle < 2 %
THERMAL - MECHANICAL SPECIFICATIONS
PARAMETER SYMBOL TEST CONDITIONS VALUES UNITS
Maximum junction temperature range T
Maximum storage temperature range T
Maximum thermal resistance,
junction to case
Typical thermal resistance,
case to heatsink
Maximum thermal resistance,
junction to ambient
J
Stg
DC operation
R
thJC
R
thCS
R
thJA
See fig. 4
Mounting surface, smooth and greased (for TO-220) 0.50
DC operation (for D2PAK) 40
Approximate weight
Mounting torque
minimum
maximum 12 (10)
Non-lubricated threads
Marking device Case style D
2
PAK STPS20L15G
- 55 to 125
- 55 to 150
°C
1.5
°C/W
2g
0.07 oz.
6 (5)
kgf · cm
(lbf · in)
V
mA
www.vishay.com For technical questions, contact: diodestech@vishay.com
Document Number: 94326
2 Revision: 16-Mar-10
VS-STPS20L15GPbF
Schottky Rectifier, 20 A
1000
100
10
- Instantaneous
F
I
Forward Current (A)
1
0.2 0.4 0.6 0.8 1.2
0
V
- Forward Voltage Drop (V)
FM
Fig. 1 - Maximum Forward Voltage Drop Characteristics
TJ = 125 °C
T
= 75 °C
J
= 25 °C
T
J
1.0
10 000
1.4
1.6
Vishay High Power Products
1000
TJ = 100 °C
100
TJ = 75 °C
10
TJ = 50 °C
TJ = 25 °C
1
- Reverse Current (mA)
R
I
0.1
0
V
- Reverse Voltage (V)
R
Fig. 2 - Typical Values of Reverse Current vs.
63912
15
Reverse Voltage
TJ = 25 °C
1000
- Junction Capacitance (pF)
T
C
100
0
V
R
10515
- Reverse Voltage (V)
Fig. 3 - Typical Junction Capacitance vs. Reverse Voltage
10
1
D = 0.75
0.1
- Thermal Impedance (°C/W)
thJC
Z
0.01
0.00001 0.0001 0.001 0.01 0.1 1
Single pulse
(thermal resistance)
D = 0.50
D = 0.33
D = 0.25
D = 0.20
t1 - Rectangular Pulse Duration (s)
20
P
DM
Notes:
1. Duty factor D = t
2. Peak TJ = PDM x Z
1/t2
t
1
thJC
t
2
+ T
C
100 10
Fig. 4 - Maximum Thermal Impedance Z
Characteristics
thJC
Document Number: 94326 For technical questions, contact: diodestech@vishay.com
www.vishay.com
Revision: 16-Mar-10 3
VS-STPS20L15GPbF
Vishay High Power Products
100
95
90
85
Square wave (D = 0.50)
80
75
Allowable Case Temperature (°C)
See note (1)
70
0
I
F(AV)
84 121620
- Average Forward Current (A)
Fig. 5 - Maximum Allowable Case Temperature vs.
Average Forward Current
1000
Schottky Rectifier, 20 A
14
12
10
8
6
4
Average Power Loss (W)
2
0
24
0
Fig. 6 - Forward Power Loss Characteristics
D = 0.20
D = 0.25
D = 0.33
D = 0.50
D = 0.75
DC
1051520
I
- Average Forward Current (A)
F(AV)
RMS limit
3025
Note
(1)
Formula used: TC = TJ - (Pd + Pd
Pd = Forward power loss = I
Pd
= Inverse power loss = VR1 x IR (1 - D); IR at VR1 = 80 % rated V
REV
Current
monitor
x VFM at (I
F(AV)
At any rated load condition
and with rated V
following surge
- Non-Repetitive Surge Current (A)
100
FSM
I
10
100 1000
tp - Square Wave Pulse Duration (µs)
Fig. 7 - Maximum Non-Repetitive Surge Current
L
D.U.T.
IRFP460
= 25 Ω
R
g
Fig. 8 - Unclamped Inductive Test Circuit
) x R
REV
;
thJC
/D) (see fig. 6);
F(AV)
RRM
applied
R
High-speed
switch
Freewheel
diode
40HFL40S02
10 000
V
= 25 V
d
+
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Document Number: 94326
4 Revision: 16-Mar-10
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