Vishay STPS1L30UPBF Data Sheet
SMB
Cathode
Vishay High Power Products
Schottky Rectifier, 1.0 A
FEATURES
• Small foot print, surface mountable
• Very low forward voltage drop
• High frequency operation
• Guard ring for enhanced ruggedness and long
Anode
term reliability
• Meets MSL level 1, per J-STD-020, LF maximum peak of
260 °C
• Compliant to RoHS directive 2002/95/EC
• Designed and qualified for industrial level
VS-STPS1L30UPbF
PRODUCT SUMMARY
I
F(AV)
V
R
I
RM
1.0 A
30 V
15 mA at 125 °C
DESCRIPTION
The VS-STPS1L30UPbF surface mount Schottky rectifie
has been designed for applications requiring low forward
drop and small foot prints on PC board. Typical applications
are in disk drives, switching power supplies, converters,
freewheeling diodes, battery charging, and reverse battery
protection.
MAJOR RATINGS AND CHARACTERISTICS
SYMBOL CHARACTERISTICS VALUES UNITS
I
F(AV)
V
I
FSM
V
T
RRM
F
J
Rectangular waveform 1.0 A
30 V
tp = 5 ms sine 360 A
1.0 Apk, TJ = 125 °C 0.30 V
Range - 55 to 150 °C
VOLTAGE RATINGS
PARAMETER SYMBOL VS-STPS1L30UPBF UNITS
Maximum DC reverse voltage V
Maximum working peak reverse voltage V
R
RWM
30 V
ABSOLUTE MAXIMUM RATINGS
PARAMETER SYMBOL TEST CONDITIONS VALUES UNITS
Maximum average forward current I
Maximum peak one cycle
non-repetitive surge current
Non-repetitive avalanche energy E
Repetitive avalanche current I
F(AV)
I
FSM
AR
50 % duty cycle at TL = 106 °C, rectangular waveform 1.0
5 μs sine or 3 μs rect. pulse
10 ms sine or 6 ms rect. pulse 75
TJ = 25 °C, IAS = 1 A, L = 6 mH 3.0 mJ
AS
Current decaying linearly to zero in 1 μs
Frequency limited by T
maximum VA = 1.5 x VR typical
J
Following any rated load
condition and with rated
V
applied
RRM
360
1.0 A
A
Document Number: 94324 For technical questions, contact: diodestech@vishay.com
Revision: 05-Mar-10 1
www.vishay.com
VS-STPS1L30UPbF
Vishay High Power Products
Schottky Rectifier, 1.0 A
ELECTRICAL SPECIFICATIONS
PARAMETER SYMBOL TEST CONDITIONS VALUES UNITS
1 A
Maximum forward voltage drop V
FM
(1)
1 A
2 A 0.470
2 A 0.375
TJ = 25 °C
Maximum reverse leakage current I
RM
Maximum junction capacitance C
Typical series inductance L
(1)
T
S
= 100 °C 5.0
J
= 125 °C 15
T
J
VR = 5 VDC (test signal range 100 kHz to 1 MHz), 25 °C 200 pF
Measured lead to lead 5 mm from package body 2.0 nH
Maximum voltage rate of change dV/dt Rated V
T
= 25 °C
J
= 125 °C
T
J
V
= Rated V
R
R
R
0.420
0.300
0.2
10 000 V/μs
Note
(1)
Pulse width < 300 μs, duty cycle < 2 %
THERMAL - MECHANICAL SPECIFICATIONS
PARAMETER SYMBOL TEST CONDITIONS VALUES UNITS
Maximum junction and storage
temperature range
Maximum thermal resistance,
junction to lead
Maximum thermal resistance,
junction to ambient
Approximate weight
Marking device Case style SMB (similar to DO-214AA) V13L
Notes
dP
(1)
------------dT
(2)
Mounted 1" square PCB
1
tot
J
thermal runaway condition for a diode on its own heatsink
--------------<
R
thJA
(1)
T
, T
J
Stg
(2)
R
thJL
- 55 to 150 °C
25
DC operation
R
thJA
80
0.10 g
0.003 oz.
V
mAT
°C/W
www.vishay.com For technical questions, contact: diodestech@vishay.com
Document Number: 94324
2 Revision: 05-Mar-10
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