Vishay STPS1045BTR Data Sheet
A
Bulletin PD-20754 rev. D 10/05
STPS1045B
SCHOTTKY RECTIFIER
Major Ratings and Characteristics
Characteristics Values Units
I
Rectangular 10 A
F(AV)
waveform
V
RRM
I
@ tp = 5 µs sine 390 A
FSM
VF@ 10 Apk, TJ = 125°C 0.57 V
TJrange - 40 to 175 °C
45 V
10 Amp
I
= 10Amp
F(AV)
VR = 45V
Description/ Features
The STPS1045B surface mount Schottky rectifier has been
designed for applications requiring low forward drop and
small foot prints on PC board. Typical applications are in disk
drives, switching power supplies, converters, free-wheeling
diodes, battery charging, and reverse battery protection.
Popular D-PAK outline
Small foot print, surface moutable
Low forward voltage drop
High frequency operation
Guard ring for enhanced ruggedness and long term
reliability
Case Styles
D-PAK (TO-252AA)
node
Base
Cathode
1
4, 2
Anode
3
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STPS1045B
Bulletin PD-20754 rev. D 10/05
Voltage Ratings
Part number STPS1045B
VRMax. DC Reverse Voltage (V) 45
V
Max. Working Peak Reverse Voltage (V)
RWM
Absolute Maximum Ratings
Parameters Value Units Conditions
I
Max. Average Forward Current 10 A 50% duty cycle @ TC = 151°C, rectangular wave form
F(AV)
* See Fig. 5
I
Max. Peak One Cycle Non-Repetitive 390 5µs Sine or 3µs Rect. pulse
FSM
Surge Current * See Fig. 7 75 10ms Sine or 6ms Rect. pulse
EASNon-Repetitive Avalanche Energy 20 mJ T
A
= 25 °C, I
J
= 3.0 Amps, L = 4.40 mH
AS
IARRepetitive Avalanche Current 3.0 A Current decaying linearly to zero in 1 µsec
Frequency limited by TJ max. VA = 1.5 x VR typical
Following any rated
load condition and with
rated V
RRM
applied
Electrical Specifications
Parameters Value Units Conditions
VFMMax. Forward Voltage Drop 0.63 V @ 10A TJ = 25 °C
* See Fig. 1 (1) 0.84 V @ 20A
0.57 V @ 10A TJ = 125 °C
0.72 V @ 20A
IRMMax. Reverse Leakage Current 0.2 mA TJ = 25 °C VR = rated V
* See Fig. 2 (1) 15 mA TJ = 125 °C
C TTypical Junction Capacitance 760 pF V R = 5V DC (test signal range 100Khz to 1Mhz) 25 °C
LSTypical Series Inductance 5.0 nH Measured lead to lead 5mm from package body
dv/dt Max. Voltage Rate of Change 10000 V/ µs (Rated VR)
(1) Pulse Width < 300µs, Duty Cycle < 2%
R
Thermal-Mechanical Specifications
Parameters Value Units Conditions
TJMax. Junction Temper. Range (*) - 40 t o 175 °C
T
Max. Storage Temperature Range - 40 to 1 75 °C
stg
R
Max. Thermal Resistance Junction 3.0 °C/ W DC operation * See Fig. 4
thJC
to Case
R
Max. Thermal Resistance Junction 50 °C/ W
thJA
to Ambient
wt Approximate Weight 0.3 (0.01) g (oz.)
Case Style D - PAK Similar to TO-252AA
Device Marking STPS1045B
(*) dPtot 1
< thermal runaway condition for a diode on its own heatsink
dTj Rth( j-a)
2
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STPS1045B
Bulletin PD-20754 rev. D 10/05
100
(A)
F
10
Instantaneous Forward Current - I
Tj = 175˚C
Tj = 125˚C
Tj = 25˚C
1000
T = 175˚C
100
10
1
J
150˚C
125˚C
100˚C
0.1
0.01
Reverse Current (mA)
0.001
0.0001
0 1020304050
Reverse Voltage - VR (V)
Fig. 2 - Typical Values of Reverse Current
Vs. Reverse Voltage
10000
(pF)
T
T = 25˚C
J
1000
75˚C
50˚C
25˚C
Junction Capacitance C
1
0 0.2 0.4 0.6 0.8 1 1.2 1.4 1.6 1.8 2
Forward Voltage Drop - V
FM
(V)
Fig. 1 - Maximum Forward Voltage Drop
100
0 1020304050
Fig. 3 - Typical Junction Capacitance
Characteristics
10
0.1
1
D = 0.75
D = 0.50
D = 0.33
D = 0.25
D = 0.20
Single Pulse
(Thermal Resistance)
P
Notes:
1. Duty factor D = t1/ t2
2. Peak Tj = Pdm x ZthJC + Tc
(°C/W)
thJC
Thermal Impedance - Z
0.01
0.00001 0.0001 0.001 0.01 0.1 1 10
t1, Rectangular Pulse Duration (Seconds)
Fig. 4 - Maximum Thermal Impedance Z
Characteristics
thJC
Reverse Voltage - VR (V)
Vs. Reverse Voltage
DM
t
1
t
2
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