Vishay STPS1045B Data Sheet
Bulletin PD-20754 rev. C 03/03
1
1
A
STPS1045B
SCHOTTKY RECTIFIER
Major Ratings and Characteristics
Characteristics STPS1045B Units
I
Rectangular 10 A
F(AV)
waveform
V
RRM
I
@ tp = 5 µs sine 390 A
FSM
VF@ 10 Apk, TJ = 125°C 0.57 V
TJrange - 40 to 175 °C
6.73 (0.26)
6.35 (0.25)
5.46 (0.21)
5.21 (0.20)
4
1.64 (0.02)
1
2
.52 (0.06)
.15 (0.04)
1.14 (0.04)
2x
0.76 (0.03)
2.28 (0.09)
2x
6.22 (0.24)
5.97 (0.23)
3
3x
4.57 (0.18)
45 V
1.27 (0.05)
0.88 (0.03)
10.42 (0.41)
0.89 (0.03)
0.64 (0.02)
2.38 (0.09)
2.19 (0.08)
9.40 (0.37)
1 - Anode
2 - Cathode
3 - Anode
4 - Cathode
10 Amp
D-Pak (TO-252AA)
Description/ Features
The STPS1045B surface mount Schottky rectifier has been
designed for applications requiring low forward drop and
small foot prints on PC board. Typical applications are in disk
drives, switching power supplies, converters, free-wheeling
diodes, battery charging, and reverse battery protection.
Popular D-PAK outline
Small foot print, surface moutable
Low forward voltage drop
High frequency operation
Guard ring for enhanced ruggedness and long term
reliability
1.14 (0.04)
0.89 (0.03)
0.58 (0.02)
0.46 (0.02)
6.45 (0.24)
5.68 (0.22)
0.51 (0.02)
MIN.
0.58 (0.02)
0.46 (0.02)
MINIMUM RECOMMENDED FOOTPRINT
5.97 (0.24)
6.48 (0.26)
2x
2.54 (0.10)
1.65 (0.06)
2x
10.67 (0.42)
2.28 (0.09)
Base
Cathode
2x
4, 2
Conform to JEDEC outline D-Pak (Similar to TO-252AA)
Dimensions in millimeters and (inches)
node
1
Anode
3
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STPS1045B
Bulletin PD-20754 rev. C 03/03
Voltage Ratings
Part number STPS1045B
VRMax. DC Reverse Voltage (V) 45
V
Max. Working Peak Reverse Voltage (V)
RWM
Absolute Maximum Ratings
Parameters Value Units Conditions
I
Max. Average Forward Current 10 A 50% duty cycle @ TC = 151°C, rectangular wave form
F(AV)
* See Fig. 5
I
Max. Peak One Cycle Non-Repetitive 390 5µs Sine or 3µs Rect. pulse
FSM
Surge Current * See Fig. 7 75 10ms Sine or 6ms Rect. pulse
EASNon-Repetitive Avalanche Energy 20 mJ T
A
= 25 °C, I
J
= 3.0 Amps, L = 4.40 mH
AS
IARRepetitive Avalanche Current 3.0 A Current decaying linearly to zero in 1 µsec
Frequency limited by TJ max. VA = 1.5 x VR typical
Following any rated
load condition and with
rated V
RRM
applied
Electrical Specifications
Parameters Value Units Conditions
VFMMax. Forward Voltage Drop 0.63 V @ 10A TJ = 25 °C
* See Fig. 1 (1) 0.84 V @ 20A
0.57 V @ 10A TJ = 125 °C
0.72 V @ 20A
IRMMax. Reverse Leakage Current 0.2 mA TJ = 25 °C VR = rated V
* See Fig. 2 (1) 15 mA TJ = 125 °C
C TTypical Junction Capacitance 760 pF V R = 5V DC (test signal range 100Khz to 1Mhz) 25 °C
LSTypical Series Inductance 5.0 nH Measured lead to lead 5mm from package body
dv/dt Max. Voltage Rate of Change 10000 V/ µs (Rated VR)
(1) Pulse Width < 300µs, Duty Cycle < 2%
R
Thermal-Mechanical Specifications
Parameters Value Units Conditions
TJMax. Junction Temper. Range (*) - 40 to 175 °C
T
Max. Storage Temperature Range - 40 to 175 °C
stg
R
Max. Thermal Resistance Junction 3.0 °C/W DC operation * See Fig. 4
thJC
to Case
R
Max. Thermal Resistance Junction 50 °C/W
thJA
to Ambient
wt Approximate Weight 0.3 (0.01) g (oz.)
Case Style D - PAK Similar to TO-252AA
(*) dPtot 1
< thermal runaway condition for a diode on its own heatsink
dTj Rth( j-a)
2
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