Vishay ST733CLPbF Series Data Sheet

TO-200AC (B-PUK)

PRODUCT SUMMARY

I

T(AV)

ST733CLPbF Series

Vishay High Power Products

Inverter Grade Thyristors

(Hockey PUK Version), 940 A

FEATURES

• Metal case with ceramic insulator

• All diffused design

• Center amplifying gate

• Guaranteed high dV/dt

• Guaranteed high dI/dt

• International standard case TO-200AC (B-PUK)

• High surge current capability

• Low thermal impedance

• High speed performance

• Lead (Pb)-free

• Designed and qualified for industrial level

940 A

TYPICAL APPLICATIONS

•Inverters

• Choppers

• Induction heating

• All types of force-commutated converters

RoHS

COMPLIANT

MAJOR RATINGS AND CHARACTERISTICS

PARAMETER TEST CONDITIONS VALUES UNITS

I

T(AV)

I

T(RMS)

I

TSM

2

I

t

V

DRM/VRRM

t

q

T

J

T

hs

T

hs

50 Hz 20 000

60 Hz 20 950

50 Hz 2000

60 Hz 1820

Range 10 to 20 µs

940 A

55 °C

1900 A

25 °C

400 to 800 V

- 40 to 125 °C

ELECTRICAL SPECIFICATIONS

VOLTAGE RATINGS

TYPE NUMBER

ST733C..L

V

VOLTAGE

CODE

04 400 500

08 800 900

DRM/VRRM

REPETITIVE PEAK VOLTAGE

, MAXIMUM

V

V

, MAXIMUM

NON-REPETITIVE PEAK VOLTAGE

RSM

V

I

DRM/IRRM

AT T

J

A

kA2s

MAXIMUM

= TJ MAXIMUM

mA

75

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Revision: 11-Aug-08 1

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ST733CLPbF Series

Vishay High Power Products

Inverter Grade Thyristors

(Hockey PUK Version), 940 A

CURRENT CARRYING CAPABILITY

I

FREQUENCY UNITS

180° el

TM

180° el

50 Hz 2200 1900 3580 3100 6800 5920

400 Hz 2050 1660 3600 3130 3750 3240

1000 Hz 1370 1070 2900 2450 2120 1780

2500 Hz 500 370 1220 980 960 770

Recovery voltage V

R

Voltage before turn-on V

D

50 50 50

V

DRM

V

Rise of on-state current dI/dt 50 - - A/µs

Heatsink temperature 40 55 40 55 40 55 °C
Equivalent values for RC circuit 10/0.47 10/0.47 10/0.47 Ω/µF

ABSOLUTE MAXIMUM RATINGS

PARAMETER SYMBOL TEST CONDITIONS VALUES UNITS

Maximum average on-state
current at heatsink temperature

Maximum RMS on-state current I

I

T(RMS)

Maximum peak, one half cycle,
non-repetitive surge current

2

Maximum I

Maximum I

t for fusing I2t

2

√t for fusing I2√t t = 0.1 to 10 ms, no voltage reapplied 20 000 kA2√s

Maximum peak on-state voltage V

Low level value of threshold voltage V

High level value of threshold voltage V

Low level value of forward slope resistance r

High level value of forward slope resistance r

Maximum holding current I

Typical latching current I

T(AV)

I

TSM

TM

T(TO)1

T(TO)2

t1

t2

H

L

180° conduction, half sine wave
double side (single side) cooled

DC at 25 °C heatsink temperature double side cooled 1900

t = 10 ms

t = 8.3 ms 20 950

t = 10 ms

t = 8.3 ms 17 600

t = 10 ms

t = 8.3 ms 1820

t = 10 ms

t = 8.3 ms 1290

No voltage
reapplied

100 % V
reapplied

No voltage
reapplied

100 % V
reapplied

ITM = 1700 A, TJ = TJ maximum,

= 10 ms sine wave pulse

t

p

(16.7 % x π x I
(I > π x I

T(AV)

(16.7 % x π x I
(I > π x I

T(AV)

< I < π x I

T(AV)

), TJ = TJ maximum 1.20

< I < π x I

T(AV)

), TJ = TJ maximum 0.29

TJ = 25 °C, IT > 30 A 600

TJ = 25 °C, VA = 12 V, Ra = 6 Ω, IG = 1 A 1000

DRM

I

TM

RRM

Sinusoidal half wave,
initial T

RRM

), TJ = TJ maximum 1.09

T(AV)

), TJ = TJ maximum 0.32

T(AV)

100 µs

V

= TJ maximum

J

DRM

I

TM

940 (350) A

55 (85) °C

20 000

16 800

2000

1410

1.63

A

V

kA

mΩ

mA

A

2

s

V

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Document Number: 94378

2 Revision: 11-Aug-08

ST733CLPbF Series

Inverter Grade Thyristors

Vishay High Power Products

(Hockey PUK Version), 940 A

SWITCHING

PARAMETER SYMBOL TEST CONDITIONS VALUES UNITS

Maximum non-repetitive rate of
rise of turned-on current

Typical delay time t

dI/dt

d

minimum

Maximum turn-off time

maximum 20

t

q

BLOCKING

PARAMETER SYMBOL TEST CONDITIONS VALUES UNITS

Maximum critical rate of rise of off-state voltage dV/dt

Maximum peak reverse and off-state leakage current

TRIGGERING

PARAMETER SYMBOL TEST CONDITIONS VALUES UNITS

Maximum peak gate power P

Maximum average gate power P

Maximum peak positive gate current I

Maximum peak positive gate voltage + V

Maximum peak negative gate voltage - V

Maximum DC gate current required to trigger I

Maximum DC gate voltage required to trigger V

Maximum DC gate current not to trigger I

Maximum DC gate voltage not to trigger V

= TJ maximum, V

T

J

= Rated V

DRM

, ITM = 2 x dI/dt

DRM

Gate pulse: 20 V 20 Ω, 10 µs 0.5 µs rise time

TJ = 25 °C, VDM = Rated V

, ITM = 50 A DC, tp = 1 µs

DRM

Resistive load, gate pulse: 10 V, 5 Ω source

TJ = TJ maximum,
I

= 550 A, commutating dI/dt = 40 A/µs

TM

V

= 50 V, tp = 500 µs, dV/dt: see table in device code

R

= TJ maximum, linear to 80 % V

T

J

higher value available on request

I

,

RRM

I

DRM

G(AV)

GM

GT

GD

GM

GM

GM

GT

GD

TJ = TJ maximum, rated V

DRM/VRRM

TJ = TJ maximum, f = 50 Hz, d% = 50

TJ = TJ maximum, tp ≤ 5 ms

TJ = 25 °C, VA = 12 V, Ra = 6 Ω

TJ = TJ maximum, rated V

DRM

applied

1000 A/µs

1.5

10

,

DRM

500 V/µs

applied 75 mA

60

10

10 A

20

5

200 mA

3V

20 mA

0.25 V

µs

W

V

THERMAL AND MECHANICAL SPECIFICATIONS

PARAMETER SYMBOL TEST CONDITIONS VALUES UNITS

Maximum operating junction temperature range T

Maximum storage temperature range T

Maximum thermal resistance, junction to heatsink R

Maximum thermal resistance, case to heatsink R

J

Stg

thJ-hs

thC-hs

DC operation single side cooled 0.073

DC operation double side cooled 0.031

DC operation single side cooled 0.011

DC operation double side cooled 0.005

Mounting force, ± 10 %

Approximate weight 255 g

Case style See dimensions - link at the end of datasheet TO-200AC (B-PUK)

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Revision: 11-Aug-08 3

- 40 to 125

- 40 to 150

14 700
(1500)

°C

K/W

N

(kg)

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ST733CLPbF Series

Vishay High Power Products

Inverter Grade Thyristors

(Hockey PUK Version), 940 A

ΔR

Note

• The table above shows the increment of thermal resistance R

CONDUCTION

thJ-hs

CONDUCTION ANGLE

180° 0.009 0.009 0.006 0.006

120° 0.011 0.011 0.011 0.011

90° 0.014 0.014 0.015 0.015

60° 0.020 0.021 0.021 0.022

30° 0.036 0.036 0.036 0.036

130

120

110

100

90

80

70

60

50

40

0 100200300400500600700

Maximum Allowable Heatsink Temperature (°C)

Average On-state Current (A)

Fig. 1 - Current Ratings Characteristics

SINUSOIDAL CONDUCTION RECTANGULAR CONDUCTION

SINGLE SIDE DOUBLE SIDE SINGLE SIDE DOUBLE SIDE

ST733C..L Se ries
(Single Side Cooled)
R (DC) = 0.073 K/ W

thJ-hs

Cond uction Angle

30°

60°

90°

120°

180°

TEST CONDITIONS UNITS

= TJ maximum K/W

T

J

when devices operate at different conduction angles than DC

thJ-hs

130

120

110

100

90

80

70

60

50

40

30

20

0 200 400 600 800 1000 1200 1400

Maximum Allowable Heatsink Temperature (°C)

Average On-state Current (A)

ST7 33 C . .L Se r i e s
(Double Side Cooled)
R (DC) = 0.031 K/ W

thJ-hs

Cond uctio n Angle

30°

60°

90°

120°

Fig. 3 - Current Ratings Characteristics

180°

130

120

110

100

90

80

70

60

50

40

30

20

0 200 400 600 800 1000

Maximum Allowable He atsink Temperature (°C)

ST7 33 C . . L Se r i e s
(Single Side Cooled)
R (DC) = 0.073 K/W

thJ-hs

Conduction Pe riod

30°

60°

90°

120°

180°

Avera ge On-state Current (A)

Fig. 2 - Current Ratings Characteristics

DC

130

120

110

100

90

80

70

60

50

40

30

20

0 500 1000 1500 2000

Maximum Allowable Heatsink Temperature (°C)

Avera ge On-state Current (A)

ST7 3 3 C . . L Se r i e s
(Double Side Cooled)
R (DC) = 0.031 K/ W

thJ-hs

30°

60°

90°

120°

Conduction Period

180°

Fig. 4 - Current Ratings Characteristics

DC

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ST733CLPbF Series

2500

180°

2000

1500

1000

Maximum Average On-stat e Power Loss (W)

120°

90°
60°
30°

Cond uction Angle

500

0

0 200 400 600 800 1000 1200 1400

Average On-state Current (A)

ST7 3 3 C . . L Se r i e s
T = 125°C

J

Fig. 5 - On-State Power Loss Characteristics

2500

180°

2000

1500

1000

Maximum Average On-state Power Loss (W)

120°

90°
60°
30°

Cond uction Angle

500

0

0 200 400 600 800 1000 1200 1400

Average On-state Current (A)

ST7 33 C . . L Se r i e s
T = 1 2 5° C

J

Fig. 6 - On-State Power Loss Characteristics

Inverter Grade Thyristors

(Hockey PUK Version), 940 A

20000

18000

RM S Li m i t

16000

14000

12000

ine Wav e On -sta te Current ( A)

10000

Pea k Ha lf S

8000

Fig. 8 - Maximum Non-Repetitive Surge Current

10000

RM S Li m i t

1000

Instantaneous On-state Current (A)

100

Fig. 9 - On-State Voltage Drop Characteristics

Vishay High Power Products

Maximum Non Repetitive Surge Current

Versus Pulse Train Duration. Control

Of Conduction May Not Be Maintained.

ST733C..L Se ries

0.01 0.1 1

Pulse Train Duration (s)

Single and Double Side Cooled

0.5 1 1.5 2 2.5 3 3.5 4 4.5

Instantaneous On-state Voltage (V)

Init ia l T = 125°C

No Vo lta ge Re a p plied

Ra t e d V Re a p p l ie d

T = 2 5 ° C

J

T = 125°C

J

ST733C..L Serie s

J

RRM

18000

16000

14000

12000

10000

Peak Half Sine Wave On -sta te C urrent (A)

8000

Numb er O f Eq ual Amp lit ude Half C ycl e C urrent Pulses (N)

At Any Rat e d Loa d Co ndition A n d Wit h

Rated V Applied Following Surge.

RRM

ST733C..L Series

110100

Init ial T = 125° C

J

@ 60 Hz 0.0083 s
@ 50 Hz 0.0100 s

Fig. 7 - Maximum Non-Repetitive Surge Current

Single and Double Side Cooled

0.1

ST7 3 3C . .L Se r ie s

thJ-hs

0.01

0.001

Transient Thermal Impedance Z (K/W)

0.001 0.01 0.1 1 10 100

Square Wave Pulse Duration (s)

Fig. 10 - Thermal Impedance Z

St e a d y St a t e V a lu e

R = 0.073 K/W

thJ-hs

(Single Side Co oled )

R = 0.031 K/W

thJ-hs

(Double Side Cooled)

(DC Operat ion)

thJC

Characteristics

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ST733CLPbF Series

Vishay High Power Products

450

1000

I = 1500 A

TM

1000 A

500 A

200

400

tp

ST7 33 C . . L Se r i e s

400

T = 125 °C

J

350

300

250

200

150

100

50

0

10 20 30 40 50 60 70 80 90 100

Ma xim um Rev e rse Rec ove ry C harg e - Qrr (µC)

Rate Of Fall Of On-state Current - di/dt (A/µs)

Fig. 11 - Reverse Recovered Charge Characteristics Fig. 12 - Reverse Recovered Current Characteristics

1E5

1E4

1500

1E3

Peak On-state Current (A)

1E2

1E11E21E31E4

2500

3000

5000

Pul se Ba se w id th (µ s)

Inverter Grade Thyristors

(Hockey PUK Version), 940 A

250

200

150

100

50

0

Maximum Reverse Recovery Current - Irr (A)

Rate Of Fall Of Forward Current - di/dt (A/µs)

Sn u b b e r c i r c u i t
R = 10 o hm s

s

C = 0.47 µF

s

V = 80% V

D

100

ST733C.. L Serie s
Sinusoid al p ulse
T = 40°C

C

50 Hz

DRM

1E1 1E2 1E3 1E4

1E1

I = 1500 A

TM

1000 A

500 A

ST733C..L Se ries
T = 125 °C

J

10 20 30 40 50 60 70 80 90 100

Snu bb er c irc ui t
R = 10 o h ms

s

C = 0.47 µF

s

V = 80% V

D

100

200

400

1000

1500

2500

tp

ST7 33 C . . L Series
Si n u so i d a l p u l s e
T = 55 ° C

C

3000

5000

Pu l se Ba sew id t h ( µs)

DRM

50 Hz

Fig. 13 - Frequency Characteristics

1E5

Snubbe r circuit
R = 10 ohms

s

C = 0.47 µF

s

V = 80% V

D

DRM

1E4

1000

1E3

5000

1E2

1E1 1E2 1E3 1E4

1500

2000

2500

3000

Pulse Basewidth (µs)

500

400

ST733C..L Series
Trapezoidal pulse
T = 40°C

C

di/ dt = 50A/ µs

100

200

50 Hz

Snubber circuit
R = 10 ohms

s

C = 0.47 µF

s

V = 80% V

D

DRM

1000

1500

2000

2500

3000

1E1 1E2 1E3 1E4

Pulse Basewidth (µs)

tp

500

ST733C..L Series
Trapezoidal pulse
T = 55°C

C

di/ dt = 50A/µs

100

200

400

50 Hz

Fig. 14 - Frequency Characteristics

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ST733CLPbF Series

Inverter Grade Thyristors

(Hockey PUK Version), 940 A

1E5

Snubbe r circuit
R = 10 ohms

s

C = 0.47 µF

s

V = 80% V

D

DRM

1E4

1E3

2500

3000

5000

1E2

1E1 1E2 1E3 1E4

1000

1500

2000

Pulse Basewidth (µs)

1E5

ST733C.. L Se rie s
Sinusoid al p ulse

tp

1E4

2

1E3

1E2

Peak On-state Current (A)

1

0.5

0.4

0.3

500

400

10

5

3

ST733C..L Series
Trapezoidal pulse
T = 40°C

C

di/ dt = 100A/µs

100

200

20 jou le s per p ulse

Snubber circuit
R = 10 ohms

s

C = 0.47 µF

s

V = 80% V

D

50 Hz

1E1 1E2 1E3 1E4

Fig. 15 - Frequency Characteristics

tp

Vishay High Power Products

ST733C..L Series
Trapezoidal pulse
T = 55°C

C

tp

500

2

di/ dt = 100A/ µs

200

400

20 jou le s p er pu lse

10

5

3

100

50 Hz

DRM

1500

2000

2500

3000

Pulse Basewidth (µs)

ST7 33 C . . L Se r i e s
Re c t a n gu l a r p u l se

di/dt = 50A/µs

0.4

0.3

1000

1

0.5

1E1

1E1 1E2 1E3 1E4

Pu l se Ba se w id t h ( µs)

1E1 1E2 1E3 1E4

Pu l se Ba sew id t h (µ s)

Fig. 16 - Maximum On-State Energy Power Loss Characteristics

100

Rectangular gate pulse
a) Reco mmend ed l oa d l ine for
rated d i/ dt : 20V, 10ohms; tr<=1 µs

b) Reco mmend ed l oa d l ine for

<=30% rate d di/ dt : 10V, 10ohms

tr<=1 µs

10

Tj=125 °C

1

Instantane ous Gate Voltage (V)

0.1

0.001 0. 01 0.1 1 10 100

VGD

IGD

Dev ice: ST733C..L Serie s

Instantaneous Gate Current (A)

(b)

Tj=25 °C

(a)

Tj=40 °C

(1) PGM = 10W, tp = 20ms
(2) PGM = 20W, tp = 10ms
(3) PGM = 40W, tp = 5ms
(4) PGM = 60W, tp = 3.3ms

(1) (2) (3)

Frequency Limited by PG(AV)

(4)

Fig. 17 - Gate Characteristics

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ST733CLPbF Series

Vishay High Power Products

ORDERING INFORMATION TABLE

Device code

ST 73 3 C 08 L H K 1 - P

324

1 - Thyristor

2 - Essential part number

3 - 3 = Fast turn-off

4 - C = Ceramic PUK

5 - Voltage code x 100 = V

(see Voltage Ratings table)

6 - L = PUK case TO-200AC (B-PUK)

7 - Reapplied dV/dt code (for t

8 -t

9 - 0 = Eyelet terminals

10

11

code

q

(gate and auxiliary cathode unsoldered leads)

1 = Fast-on terminals

(gate and auxiliary cathode unsoldered leads)

2 = Eyelet terminals

(gate and auxiliary cathode soldered leads)

3 = Fast-on terminals

(gate and auxiliary cathode soldered leads)

- Critical dV/dt:

None = 500 V/µs (standard value)

L = 1000 V/µs (special selection)

- P = Lead (Pb)-free

Inverter Grade Thyristors

(Hockey PUK Version), 940 A

51

6 7 8 9 10 11

RRM

dV/dt - tq combinations available

test condition)

q

t

q

* Standard part number.
All other types available only on request.

dV/dt (V/µs) 20 50 100 200 400

(µs)

10
12
15
18
20

CN DN EN
CM DM EM

CL DL EL
CP DP EP FP HP
CK DK EK FK H

FM*

FL*

--

-

HL

LINKS TO RELATED DOCUMENTS

Dimensions http://www.vishay.com/doc?95076

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8 Revision: 11-Aug-08

Document Number: 94378

DIMENSIONS in millimeters (inches)

Pin receptacle
AMP. 60598-1

0.7 (0.03) MIN.

34 (1.34) DIA. MAX.

2 places

53 (2.09) DIA. MAX.

58.5 (2.3) DIA. MAX.

2 holes DIA. 3.5 (0.14) x 2.5 (0.1) deep

4.7 (0.18)

27 (1.06) MAX.

0.7 (0.03) MIN.

6.2 (0.24) MIN.

36.5 (1.44)

Creepage distance: 36.33 (1.430) minimum
Strike distance: 17.43 (0.686) minimum

Quote between upper and lower pole pieces has to be considered after
application of mounting force (see thermal and mechanical specification)

20° ± 5°

Outline Dimensions

Vishay Semiconductors

TO-200AC (B-PUK)

Document Number: 95076 For technical questions, contact: [e-mail]
Revision: 01-Aug-07 1

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