Vishay ST733CLPbF Series Data Sheet

TO-200AC (B-PUK)

PRODUCT SUMMARY

I

T(AV)

ST733CLPbF Series

Vishay High Power Products

Inverter Grade Thyristors

(Hockey PUK Version), 940 A

FEATURES

• Metal case with ceramic insulator

• All diffused design

• Center amplifying gate

• Guaranteed high dV/dt

• Guaranteed high dI/dt

• International standard case TO-200AC (B-PUK)

• High surge current capability

• Low thermal impedance

• High speed performance

• Lead (Pb)-free

• Designed and qualified for industrial level

940 A

TYPICAL APPLICATIONS

•Inverters

• Choppers

• Induction heating

• All types of force-commutated converters

RoHS

COMPLIANT

MAJOR RATINGS AND CHARACTERISTICS

PARAMETER TEST CONDITIONS VALUES UNITS

I

T(AV)

I

T(RMS)

I

TSM

2

I

t

V

DRM/VRRM

t

q

T

J

T

hs

T

hs

50 Hz 20 000

60 Hz 20 950

50 Hz 2000

60 Hz 1820

Range 10 to 20 µs

940 A

55 °C

1900 A

25 °C

400 to 800 V

- 40 to 125 °C

ELECTRICAL SPECIFICATIONS

VOLTAGE RATINGS

TYPE NUMBER

ST733C..L

V

VOLTAGE

CODE

04 400 500

08 800 900

DRM/VRRM

REPETITIVE PEAK VOLTAGE

, MAXIMUM

V

V

, MAXIMUM

NON-REPETITIVE PEAK VOLTAGE

RSM

V

I

DRM/IRRM

AT T

J

A

kA2s

MAXIMUM

= TJ MAXIMUM

mA

75

Document Number: 94378 For technical questions, contact: [e-mail]
Revision: 11-Aug-08 1

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ST733CLPbF Series

Vishay High Power Products

Inverter Grade Thyristors

(Hockey PUK Version), 940 A

CURRENT CARRYING CAPABILITY

I

FREQUENCY UNITS

180° el

TM

180° el

50 Hz 2200 1900 3580 3100 6800 5920

400 Hz 2050 1660 3600 3130 3750 3240

1000 Hz 1370 1070 2900 2450 2120 1780

2500 Hz 500 370 1220 980 960 770

Recovery voltage V

R

Voltage before turn-on V

D

50 50 50

V

DRM

V

Rise of on-state current dI/dt 50 - - A/µs

Heatsink temperature 40 55 40 55 40 55 °C
Equivalent values for RC circuit 10/0.47 10/0.47 10/0.47 Ω/µF

ABSOLUTE MAXIMUM RATINGS

PARAMETER SYMBOL TEST CONDITIONS VALUES UNITS

Maximum average on-state
current at heatsink temperature

Maximum RMS on-state current I

I

T(RMS)

Maximum peak, one half cycle,
non-repetitive surge current

2

Maximum I

Maximum I

t for fusing I2t

2

√t for fusing I2√t t = 0.1 to 10 ms, no voltage reapplied 20 000 kA2√s

Maximum peak on-state voltage V

Low level value of threshold voltage V

High level value of threshold voltage V

Low level value of forward slope resistance r

High level value of forward slope resistance r

Maximum holding current I

Typical latching current I

T(AV)

I

TSM

TM

T(TO)1

T(TO)2

t1

t2

H

L

180° conduction, half sine wave
double side (single side) cooled

DC at 25 °C heatsink temperature double side cooled 1900

t = 10 ms

t = 8.3 ms 20 950

t = 10 ms

t = 8.3 ms 17 600

t = 10 ms

t = 8.3 ms 1820

t = 10 ms

t = 8.3 ms 1290

No voltage
reapplied

100 % V
reapplied

No voltage
reapplied

100 % V
reapplied

ITM = 1700 A, TJ = TJ maximum,

= 10 ms sine wave pulse

t

p

(16.7 % x π x I
(I > π x I

T(AV)

(16.7 % x π x I
(I > π x I

T(AV)

< I < π x I

T(AV)

), TJ = TJ maximum 1.20

< I < π x I

T(AV)

), TJ = TJ maximum 0.29

TJ = 25 °C, IT > 30 A 600

TJ = 25 °C, VA = 12 V, Ra = 6 Ω, IG = 1 A 1000

DRM

I

TM

RRM

Sinusoidal half wave,
initial T

RRM

), TJ = TJ maximum 1.09

T(AV)

), TJ = TJ maximum 0.32

T(AV)

100 µs

V

= TJ maximum

J

DRM

I

TM

940 (350) A

55 (85) °C

20 000

16 800

2000

1410

1.63

A

V

kA

mΩ

mA

A

2

s

V

www.vishay.com For technical questions, contact: [e-mail]

Document Number: 94378

2 Revision: 11-Aug-08

ST733CLPbF Series

Inverter Grade Thyristors

Vishay High Power Products

(Hockey PUK Version), 940 A

SWITCHING

PARAMETER SYMBOL TEST CONDITIONS VALUES UNITS

Maximum non-repetitive rate of
rise of turned-on current

Typical delay time t

dI/dt

d

minimum

Maximum turn-off time

maximum 20

t

q

BLOCKING

PARAMETER SYMBOL TEST CONDITIONS VALUES UNITS

Maximum critical rate of rise of off-state voltage dV/dt

Maximum peak reverse and off-state leakage current

TRIGGERING

PARAMETER SYMBOL TEST CONDITIONS VALUES UNITS

Maximum peak gate power P

Maximum average gate power P

Maximum peak positive gate current I

Maximum peak positive gate voltage + V

Maximum peak negative gate voltage - V

Maximum DC gate current required to trigger I

Maximum DC gate voltage required to trigger V

Maximum DC gate current not to trigger I

Maximum DC gate voltage not to trigger V

= TJ maximum, V

T

J

= Rated V

DRM

, ITM = 2 x dI/dt

DRM

Gate pulse: 20 V 20 Ω, 10 µs 0.5 µs rise time

TJ = 25 °C, VDM = Rated V

, ITM = 50 A DC, tp = 1 µs

DRM

Resistive load, gate pulse: 10 V, 5 Ω source

TJ = TJ maximum,
I

= 550 A, commutating dI/dt = 40 A/µs

TM

V

= 50 V, tp = 500 µs, dV/dt: see table in device code

R

= TJ maximum, linear to 80 % V

T

J

higher value available on request

I

,

RRM

I

DRM

G(AV)

GM

GT

GD

GM

GM

GM

GT

GD

TJ = TJ maximum, rated V

DRM/VRRM

TJ = TJ maximum, f = 50 Hz, d% = 50

TJ = TJ maximum, tp ≤ 5 ms

TJ = 25 °C, VA = 12 V, Ra = 6 Ω

TJ = TJ maximum, rated V

DRM

applied

1000 A/µs

1.5

10

,

DRM

500 V/µs

applied 75 mA

60

10

10 A

20

5

200 mA

3V

20 mA

0.25 V

µs

W

V

THERMAL AND MECHANICAL SPECIFICATIONS

PARAMETER SYMBOL TEST CONDITIONS VALUES UNITS

Maximum operating junction temperature range T

Maximum storage temperature range T

Maximum thermal resistance, junction to heatsink R

Maximum thermal resistance, case to heatsink R

J

Stg

thJ-hs

thC-hs

DC operation single side cooled 0.073

DC operation double side cooled 0.031

DC operation single side cooled 0.011

DC operation double side cooled 0.005

Mounting force, ± 10 %

Approximate weight 255 g

Case style See dimensions - link at the end of datasheet TO-200AC (B-PUK)

Document Number: 94378 For technical questions, contact: [e-mail]
Revision: 11-Aug-08 3

- 40 to 125

- 40 to 150

14 700
(1500)

°C

K/W

N

(kg)

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