Vishay ST730CLPbF Series Data Sheet

ST730CLPbF Series

Vishay High Power Products

Phase Control Thyristors

(Hockey PUK Version), 990 A

FEATURES

• Center amplifying gate

• Metal case with ceramic insulator

• International standard case TO-200AC (B-PUK)

• Lead (Pb)-free

TO-200AC (B-PUK)

PRODUCT SUMMARY

I

T(AV)

990 A

MAJOR RATINGS AND CHARACTERISTICS

PARAMETER TEST CONDITIONS VALUES UNITS

I

T(AV)

I

T(RMS)

I

TSM

2

I

t

V

DRM/VRRM

t

q

T

J

T

hs

T

hs

50 Hz 17 800

60 Hz 18 700

50 Hz 1591

60 Hz 1452

Typical 150 µs

• Designed and qualified for industrial level

TYPICAL APPLICATIONS

• DC motor controls

• Controlled DC power supplies

• AC controllers

990 A

55 °C

2000 A

25 °C

A

kA2s

800 to 2000 V

- 40 to 125 °C

RoHS

COMPLIANT

ELECTRICAL SPECIFICATIONS

VOLTAGE RATINGS

V

TYPE NUMBER

ST730C..L

Document Number: 94414 For technical questions, contact: [e-mail]
Revision: 11-Aug-08 1

VOLTAGE

CODE

08 800 900

12 1200 1300

14 1400 1500

16 1600 1700

18 1800 1900

20 2000 2100

DRM/VRRM

, MAXIMUM REPETITIVE PEAK

AND OFF-STATE VOLTAGE

V

V

, MAXIMUM

NON-REPETITIVE PEAK VOLTAGE

RSM

V

I

DRM/IRRM

AT T

= TJ MAXIMUM

J

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MAXIMUM

mA

80

ST730CLPbF Series

Vishay High Power Products

Phase Control Thyristors

(Hockey PUK Version), 990 A

ABSOLUTE MAXIMUM RATINGS

PARAMETER SYMBOL TEST CONDITIONS VALUES UNITS

Maximum average on-state current
at heatsink temperature

Maximum RMS on-state current I

I

T(RMS)

Maximum peak, one-cycle
non-repetitive surge current

2

Maximum I

Maximum I

t for fusing I2t

2

√t for fusing I2√t t = 0.1 to 10 ms, no voltage reapplied 15 910 kA2√s

Low level value of threshold voltage V

High level value of threshold voltage V

Low level value of on-state slope resistance r

High level value of on-state slope resistance r

Maximum on-state voltage V

Maximum holding current I

Typical latching current I

T(AV)

180° conduction, half sine wave
double side (single side) cooled

DC at 25 °C heatsink temperature double side cooled 2000

I

TSM

T(TO)1

T(TO)2

t1

t2

TM

H

L

t = 10 ms

t = 8.3 ms 18 700

t = 10 ms

t = 8.3 ms 15 700

t = 10 ms

t = 8.3 ms 1452

t = 10 ms

t = 8.3 ms 1027

(16.7 % x π x I
(I > π x I
(16.7 % x π x I
(I > π x I

Ipk = 2000 A, TJ = TJ maximum, tp = 10 ms sine pulse 1.62 V

TJ = 25 °C, anode supply 12 V resistive load

No voltage
reapplied

100 % V
reapplied

No voltage

RRM

Sinusoidal half wave,
initial T

= TJ maximum

J

reapplied

100 % V

RRM

reapplied

< I < π x I

T(AV)

), TJ = TJ maximum 1.12

T(AV)

< I < π x I

T(AV)

), TJ = TJ maximum 0.27

T(AV)

), TJ = TJ maximum 0.98

T(AV)

), TJ = TJ maximum 0.32

T(AV)

990 (375) A

55 (85) °C

17 800

15 000

1591

1125

600

1000

A

kA2s

V

mΩ

mA

SWITCHING

PARAMETER SYMBOL TEST CONDITIONS VALUES UNITS

Maximum non-repetitive rate of rise
of turned-on current

Typical delay time t

Typical turn-off time t

dI/dt

d

q

Gate drive 20 V, 20 Ω, t
T

= TJ maximum, anode voltage ≤ 80 % V

J

≤ 1 µs

r

DRM

Gate current 1 A, dIg/dt = 1 A/µs
V

= 0.67 % V

d

, TJ = 25 °C

DRM

ITM = 750 A, TJ = TJ maximum, dI/dt = 60 A/µs,
V

= 50 V, dV/dt = 20 V/µs, gate 0 V 100 Ω, tp = 500 µs

R

1000 A/µs

1.0
µs

150

BLOCKING

PARAMETER SYMBOL TEST CONDITIONS VALUES UNITS

Maximum critical rate of rise of
off-state voltage

Maximum peak reverse and
off-state leakage current

dV/dt T

I

RRM,

I

DRM

= TJ maximum linear to 80 % rated V

J

TJ = TJ maximum, rated V

DRM/VRRM

DRM

500 V/µs

applied 80 mA

www.vishay.com For technical questions, contact: [e-mail]

Document Number: 94414

2 Revision: 11-Aug-08

ST730CLPbF Series

Phase Control Thyristors

Vishay High Power Products

(Hockey PUK Version), 990 A

TRIGGERING

PARAMETER SYMBOL TEST CONDITIONS

Maximum peak gate power P

Maximum average gate power P

Maximum peak positive gate current I

Maximum peak positive gate voltage + V

Maximum peak negative gate voltage - V

GM

G(AV)

GM

TJ = TJ maximum, tp ≤ 5 ms 10.0

TJ = TJ maximum, f = 50 Hz, d% = 50 2.0

TJ = TJ maximum, tp ≤ 5 ms 3.0 A

GM

TJ = TJ maximum, tp ≤ 5 ms

GM

TJ = - 40 °C

DC gate current required to trigger I

DC gate voltage required to trigger V

DC gate current not to trigger I

DC gate voltage not to trigger V

GT

GT

GD

GD

= 25 °C 100 200

J

T

= 125 °C 50 -

J

TJ = - 40 °C 2.5 -

= 25 °C 1.8 3.0

T

J

T

= 125 °C 1.1 -

J

Maximum required gate trigger/
current/voltage are the lowest
value which will trigger all units
12 V anode to cathode applied

Maximum gate current/voltage
not to trigger is the maximum

TJ = TJ maximum

value which will not trigger any
unit with rated V

anode to

DRM

cathode applied

VALUES

TYP. MAX.

20

5.0

200 -

10 mA

0.25 V

UNITS

W

V

mAT

V

THERMAL AND MECHANICAL SPECIFICATIONS

PARAMETER SYMBOL TEST CONDITIONS VALUES UNITS

Maximum operating junction temperature range T

Maximum storage temperature range T

Maximum thermal resistance, junction to heatsink R

Maximum thermal resistance, case to heatsink R

J

Stg

thJ-hs

thC-hs

DC operation single side cooled 0.073

DC operation double side cooled 0.031

DC operation single side cooled 0.011

DC operation double side cooled 0.006

Mounting force, ± 10 %

Approximate weight 255 g

Case style See dimensions - link at the end of datasheet TO-200AC (B-PUK)

ΔR

CONDUCTION ANGLE

CONDUCTION

thJ-hs

180°

120°

90°

60°

30°

SINUSOIDAL CONDUCTION RECTANGULAR CONDUCTION

SINGLE SIDE DOUBLE SIDE SINGLE SIDE DOUBLE SIDE

0.009 0.009 0.006 0.006

0.011 0.011 0.010 0.011

0.014 0.014 0.015 0.015

0.020 0.020 0.021 0.021

0.036 0.036 0.036 0.036

TEST CONDITIONS UNITS

T

= TJ maximum K/W

J

Note

• The table above shows the increment of thermal resistance R

when devices operate at different conduction angles than DC

thJ-hs

- 40 to 125

- 40 to 150

14 700
(1500)

°C

K/W

N

(kg)

Document Number: 94414 For technical questions, contact: [e-mail]

www.vishay.com

Revision: 11-Aug-08 3