Vishay ST333C..L SERIES Data Sheet

Bulletin I25187 rev. B 04/00

ST333C..L SERIES

INVERTER GRADE THYRISTORS Hockey Puk Version

Features

Metal case with ceramic insulator

International standard case TO-200AC (B-PUK)
All diffused design

Center amplifying gate
Guaranteed high dV/dt

Guaranteed high dI/dt
High surge current capability

Low thermal impedance
High speed performance

Typical Applications

Inverters
Choppers

Induction heating
All types of force-commutated converters

case style TO-200AC (B-PUK)

620A

Major Ratings and Characteristics

Parameters ST333C..L Units

I

T(AV)

@ T

hs

I

T(RMS)

@ T

hs

I

TSM

I2t@

V

DRM/VRRM

tq range 10 to 30 µs

T

J

@ 50Hz 11000 A

@ 60Hz 11500 A

50Hz 605 KA2s

@ 60Hz 553 KA

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620 A

55 °C

1230 A

25 °C

400 to 800 V

- 40 to 125 °C

2

s

1

ST333C..L Series

Bulletin I25187 rev. B 04/00

ELECTRICAL SPECIFICATIONS

Voltage Ratings

Voltage V

DRM/VRRM

Type number Code repetitive peak voltage non-repetitive peak voltage @ T

ST333C..L 50

04 400 500

08 800 900

Current Carrying Capability

, maximum V

, maximum I

RSM

DRM/IRRM

VVmA

max.

= TJ max.

J

I

Frequency Units

180

TM

o

el

180oel

I

TM

100µs

I

TM

50Hz 1430 1250 2340 1940 6310 5620
400Hz 1670 1170 2310 2010 3440 5030

1000Hz 1080 880 2090 1800 2040 1750

2500Hz 530 400 1190 990 990 800

Recovery voltage Vr 50 50 50 50 50 50

Voltage before turn-on Vd V

DRM

V

DRM

V

DRM

Rise of on-state current di/dt 50 50 - - - - A/µs

Heatsink temperature 40 55 40 55 40 55 °C
Equivalent values for RC circuit 10Ω / 0.47µF 10Ω / 0.47µF 10Ω / 0.47µF

On-state Conduction

Parameter ST333C..L Units Conditions

I

Max. average on-state current 620 (305) A 180° conduction, half sine wave

T(AV)

@ Heatsink temperature 55 (75) °C double side (single side) cooled

I

Max. RMS on-state current 1230 DC @ 25°C heatsink temperature double side cooled

T(RMS)

I

Max. peak, one half cycle, 11000 t = 10ms No voltage

TSM

non-repetitive surge current 11500 A t = 8.3ms reapplied

9250 t = 10ms 100% V

9700 t = 8.3ms reapplied Sinusoidal half wave,

2

t Maximum I2t for fusing 605 t = 10ms No voltage Initial TJ = TJ max

I

553 t = 8.3ms reapplied

428 t = 10ms 100% V

KA2s

391 t = 8.3ms reapplied

2

I

√t Maximum I2√t for fusing 6050 KA2√s t = 0.1 to 10ms, no voltage reapplied

RRM

RRM

A

V

2

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ST333C..L Series

Bulletin I25187 rev. B 04/00

On-state Conduction

Parameter ST333C..L Units Conditions

VTMMax. peak on-state voltage 1.96 ITM= 1810A, TJ = TJ max, tp = 10ms sine wave pulse

Low level value of threshold

V

T(TO)1

voltage

High level value of threshold

V

T(TO)2

voltage

Low level value of forward

r

1

t

slope resistance

High level value of forward

r

t2

slope resistance

Maximum holding current 600 TJ = 25°C, IT > 30A

I

H

Typical latching current 1000 TJ = 25°C, VA= 12V, Ra = 6Ω, IG= 1A

I

L

Switching

Parameter ST333C..L Units Conditions

di/dt Max. non-repetitive rate of rise T

of turned-on current I

t

Typical delay time 1.1

d

t

Max. turn-off time

q

0.91 (16.7% x π x I

V

0.93 (I > π x I

0.58 (16.7% x π x I
mΩ

0.58 (I > π x I

mA

= TJ max, V

1000 A/µs

Min Max

10 30

J

= 2 x di/dt

TM

= 25°C, V

T

J

Resistive load, Gate pulse: 10V, 5Ω source

µs

= TJ max, I

T

J

= 50V, tp = 500µs, dv/dt: see table in device code

V

R

< I < π x I

T(AV)

), TJ = TJ max.

T(AV)

< I < π x I

T(AV)

), TJ = TJ max.

T(AV)

DRM

= rated V

DM

= 550A, commutating di/dt = 40A/µs

TM

= rated V

DRM, ITM

T(AV)

T(AV)

DRM

= 50A DC, tp= 1µs

), TJ = TJ max.

), TJ = TJ max.

Blocking

Parameter ST333C..L Units Conditions

dv/dt Maximum critical rate of rise of T

off-state voltage available on request

Max. peak reverse and off-state

I

RRM

leakage current

I

DRM

500 V/µs

50 mA T

Triggering

Parameter ST333C..L Units Conditions

PGMMaximum peak gate power 60

Maximum average gate power 10

P

G(AV)

I

Max. peak positive gate current 10 A TJ = TJ max, tp ≤ 5ms

GM

+VGMMaximum peak positive

gate voltage

Maximum peak negative

-V

GM

gate voltage

Max. DC gate current required

I

GT

to trigger

V

Max. DC gate voltage required

GT

to trigger

Max. DC gate current not to trigger 20 mA

I

GD

V

Max. DC gate voltage not to trigger 0.25 V

GD

20

5

200 mA

3V

WTJ = TJ max., f = 50Hz, d% = 50

VTJ = TJ max, tp ≤ 5ms

T

TJ = TJ max, rated V

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= TJ max. linear to 80% V

J

= TJ max, rated V

J

= 25°C, VA = 12V, Ra = 6Ω

J

DRM/VRRM

applied

DRM

, higher value

DRM

applied

3