Vishay ST330SPbF Series Data Sheet

Vishay High Power Products

Phase Control Thyristors

(Stud Version), 330 A

FEATURES

• Center amplifying gate

• International standard case TO-209AE (TO-118)

• Hermetic metal case with ceramic insulator

• Compression bonded encapsulation for heavy duty
operations such as severe thermal cycling

• Lead (Pb)-free

• Designed and qualified for industrial level

ST330SPbF Series

RoHS

COMPLIANT

TO-209AE (TO-118)

TYPICAL APPLICATIONS

• DC motor controls

PRODUCT SUMMARY

I

T(AV)

330 A

• Controlled DC power supplies

• AC controllers

MAJOR RATINGS AND CHARACTERISTICS

PARAMETER TEST CONDITIONS VALUES UNITS

I

T(AV)

I

T(RMS)

I

TSM

2

I

t

V

DRM/VRRM

t

q

T

J

T

C

50 Hz 9000

60 Hz 9420

50 Hz 405

60 Hz 370

Typical 100 µs

330 A

75 °C

520

400 to 2000 V

- 40 to 125 °C

ELECTRICAL SPECIFICATIONS

A

kA2s

VOLTAGE RATINGS

V

TYPE NUMBER

ST330S

Document Number: 94409 For technical questions, contact: [e-mail]
Revision: 11-Aug-08 1

VOLTAGE

CODE

04 400 500

08 800 900

12 1200 1300

16 1600 1700

20 2000 2100

DRM/VRRM

, MAXIMUM REPETITIVE PEAK

AND OFF-STATE VOLTAGE

V

V

, MAXIMUM

NON-REPETITIVE PEAK VOLTAGE

RSM

V

I

DRM/IRRM

AT T

= TJ MAXIMUM

J

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MAXIMUM

mA

50

ST330SPbF Series

Vishay High Power Products

Phase Control Thyristors

(Stud Version), 330 A

ABSOLUTE MAXIMUM RATINGS

PARAMETER SYMBOL TEST CONDITIONS VALUES UNITS

Maximum average on-state current
at case temperature

Maximum RMS on-state current I

I

T(RMS)

Maximum peak, one-cycle
non-repetitive surge current

2

Maximum I

Maximum I

t for fusing I2t

2

√t for fusing I2√t t = 0.1 to 10 ms, no voltage reapplied 4050 kA2√s

Low level value of threshold voltage V

High level value of threshold voltage V

Low level value of on-state slope resistance r

High level value of on-state slope resistance r

Maximum on-state voltage V

Maximum holding current I

Typical latching current I

T(AV)

I

TSM

T(TO)1

T(TO)2

t1

t2

TM

H

L

180° conduction, half sine wave 330 A

75 °C

DC at 75 °C case temperature 520

t = 10 ms

t = 8.3 ms 9420

t = 10 ms

t = 8.3 ms 7920

t = 10 ms

t = 8.3 ms 370

t = 10 ms

t = 8.3 ms 262

(16.7 % x π x I
(I > π x I
(16.7 % x π x I
(I > π x I

No voltage
reapplied

100 % V
reapplied

No voltage

RRM

Sinusoidal half wave,
initial T

= TJ maximum

J

reapplied

100 % V

RRM

reapplied

< I < π x I

T(AV)

), TJ = TJ maximum 0.898

T(AV)

< I < π x I

T(AV)

), TJ = TJ maximum 0.636

T(AV)

), TJ = TJ maximum 0.834

T(AV)

), TJ = TJ maximum 0.687

T(AV)

9000

7570

405

287

Ipk = 1000 A, TJ = TJ maximum, tp = 10 ms sine pulse 1.52 V

TJ = 25 °C, anode supply 12 V resistive load

600

1000

A

kA2s

V

mΩ

mA

SWITCHING

PARAMETER SYMBOL TEST CONDITIONS VALUES UNITS

Maximum non-repetitive rate of rise
of turned-on current

Typical delay time t

Typical turn-off time t

dI/dt

d

q

Gate drive 20 V, 20 Ω, t
T

= TJ maximum, anode voltage ≤ 80 % V

J

≤ 1 µs

r

DRM

Gate current A, dIg/dt = 1 A/µs
V

= 0.67 % V

d

, TJ = 25 °C

DRM

ITM = 550 A, TJ = TJ maximum, dI/dt = 40 A/µs,
V

= 50 V, dV/dt = 20 V/µs, gate 0 V 100 Ω, tp = 500 µs

R

1000 A/µs

1.0
µs

100

BLOCKING

PARAMETER SYMBOL TEST CONDITIONS VALUES UNITS

Maximum critical rate of rise of
off-state voltage

Maximum peak reverse and
off-state leakage current

dV/dt T

I

RRM,

I

DRM

= TJ maximum linear to 80 % rated V

J

TJ = TJ maximum, rated V

DRM/VRRM

DRM

500 V/µs

applied 50 mA

www.vishay.com For technical questions, contact: [e-mail]

Document Number: 94409

2 Revision: 11-Aug-08

ST330SPbF Series

Phase Control Thyristors

Vishay High Power Products

(Stud Version), 330 A

TRIGGERING

PARAMETER SYMBOL TEST CONDITIONS

Maximum peak gate power P

Maximum average gate power P

Maximum peak positive gate current I

Maximum peak positive gate voltage + V

Maximum peak negative gate voltage - V

GM

G(AV)

GM

TJ = TJ maximum, tp ≤ 5 ms 10.0

TJ = TJ maximum, f = 50 Hz, d% = 50 2.0

TJ = TJ maximum, tp ≤ 5 ms 3.0 A

GM

TJ = TJ maximum, tp ≤ 5 ms

GM

TJ = - 40 °C

DC gate current required to trigger I

DC gate voltage required to trigger V

DC gate current not to trigger I

DC gate voltage not to trigger V

GT

GT

GD

GD

= 25 °C 100 200

J

T

= 125 °C 50 -

J

TJ = - 40 °C 2.5 -

= 25 °C 1.8 3

T

J

= 125 °C 1.1 -

T

J

Maximum required gate trigger/
current/voltage are the lowest
value which will trigger all units
12 V anode to cathode applied

Maximum gate current/voltage
not to trigger is the maximum

TJ = TJ maximum

value which will not trigger any
unit with rated V

anode to

DRM

cathode applied

VALUES

TYP. MAX.

20

5.0

200 -

10 mA

0.25 V

UNITS

W

V

mAT

V

THERMAL AND MECHANICAL SPECIFICATIONS

PARAMETER SYMBOL TEST CONDITIONS VALUES UNITS

Maximum operating junction temperature range T

Maximum storage temperature range T

Maximum thermal resistance, junction to case R

Maximum thermal resistance, case to heatsink R

J

Stg

thJC

thC-hs

DC operation 0.10

Mounting surface, smooth, flat and greased 0.03

Mounting torque, ± 10 % Non-lubricated threads

Approximate weight 535 g

Case style See dimension - link at the end of datasheet TO-209AE (TO-118)

ΔR

CONDUCTION

thJC

CONDUCTION ANGLE SINUSOIDAL CONDUCTION RECTANGULAR CONDUCTION TEST CONDITIONS UNITS

180° 0.011 0.008

120° 0.013 0.014

T

90° 0.017 0.018

= TJ maximum K/W

J

60° 0.025 0.026

30° 0.041 0.042

Note

• The table above shows the increment of thermal resistance R

when devices operate at different conduction angles than DC

thJC

- 40 to 125

- 40 to 150

48.5

(425)

(lbf · in)

°C

K/W

N · m

Document Number: 94409 For technical questions, contact: [e-mail]

www.vishay.com

Revision: 11-Aug-08 3