Vishay ST3230C..R SERIES Data Sheet
Bulletin I25200 rev. B 04/00
ST3230C..R SERIES
PHASE CONTROL THYRISTORS Hockey Puk Version
Features
Double side cooling
High surge capability
High mean current
Fatigue free
Typical Applications
DC motor controls
Controlled DC power supplies
AC controllers
Major Ratings and Characteristics
Parameters ST3230C..R Units
I
T(AV)
I
T(AV)
I
T(RMS)
I
TSM
@ T
C
@ T
hs
@ T
hs
@ 50Hz 61200 A
@ 60Hz 64000 A
2785 A
80 °C
3360 A
55 °C
5970 A
25 °C
3360A
(R-PUK)
I2t@
V
DRM/VRRM
t
q
T
J
50Hz 18730 KA2s
60Hz 17000 KA2s
@
typical 500 µs
max. 125 °C
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1000 to 1800 V
1
ST3230C..R Series
Bulletin I25200 rev. B 04/00
ELECTRICAL SPECIFICATIONS
Voltage Ratings
Voltage V
DRM/VRRM
Type number Code peak and off-state voltage repetitive peak voltage
10 1000 1100
12 1200 1300
ST3230C..R 250
14 1400 1500
16 1600 1700
18 1800 1900
On-state Conduction
Parameter ST3230C..R Units Conditions
I
Max. average on-state current 2785 (1720) A
T(AV)
@ Case temperature 80 °C
Max. average on-state current 3360 (1360) A
I
T(AV)
@ Heatsink temperature 55 (85) °C
Max. RMS on-state current 5970 A DC @ 25°C heatsink temperature double side cooled
I
T(RMS)
I
Max. peak, one-cycle No voltage
TSM
non-repetitive surge current reapplied
2
t Maximum I2t for fusing No voltage Initial TC = 125°C
I
V
Max. value of threshold voltage 0.92 V TJ = TJ max.
T(TO)
r
Max. value of on-state slope
t
resistance
Max. on-state voltage 1.3 V Ipk= 2900A, TC = 25°C
V
TM
Typical latching current 300 mA TJ = 25°C, VD = 5V
I
L
, max. repetitive V
, maximum non- I
RSM
DRM/IRRM
@ TC = 125°C
VVmA
180° conduction, half sine wave
double side (single side [anode side]) cooled
A
KA2s
mΩ
t = 10ms
t = 8.3ms
t = 10ms
t = 8.3ms
t = 10ms
t = 8.3ms
t = 10ms
t = 8.3ms
50% V
RRM
reapplied Sinusoidal half wave,
reapplied
50% V
RRM
reapplied
61200
64000
49000
51300
18730
17000
12000
10920
0.09 TJ = TJ max.
max.
Switching
Parameter ST3230C..R Units Conditions
di/dt Max. repetitive 50Hz (no repetitive) From 67% V
rate of rise of turned-on current to 1A, T
Maximum delay time 4.5
t
d
t
Typical turn-off time 500
q
150 (300) A/µs
µs
Gate drive 30V, 15Ω, Vd = 67% V
Rise time 0.5µs
I
= 1000A, tp = 1ms, TJ = TJ max, V
T
/dt = 2A/µs, V
dI
RR
2
to 1000A gate drive 10V, 5Ω, tr = 0.5µs
DRM
= TJ max.
J
67% V
DR =
DRM, dvDR
= 25°C
DRM, TJ
= 50V,
RM
/dt = 8V/µs linear
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