Vishay ST300CPbF Series Data Sheet

Vishay High Power Products

Phase Control Thyristors

(Hockey PUK Version), 650 A

FEATURES

• Center amplifying gate

• Metal case with ceramic insulator

• International standard case TO-200AB (E-PUK)

• Lead (Pb)-free

• Designed and qualified for industrial level

ST300CPbF Series

RoHS

COMPLIANT

TO-200AB (E-PUK)

TYPICAL APPLICATIONS

• DC motor controls

PRODUCT SUMMARY

I

T(AV)

650 A

• Controlled DC power supplies

• AC controllers

MAJOR RATINGS AND CHARACTERISTICS

PARAMETER TEST CONDITIONS VALUES UNITS

I

T(AV)

I

T(RMS)

I

TSM

2

I

t

V

DRM/VRRM

t

q

T

J

T

hs

T

hs

50 Hz 8000

60 Hz 8380

50 Hz 320

60 Hz 292

Typical 100 µs

650 A

55 °C

1290 A

25 °C

A

kA2s

400 to 2000 V

- 40 to 125 °C

ELECTRICAL SPECIFICATIONS

VOLTAGE RATINGS

V

TYPE NUMBER

ST300C..C

Document Number: 94403 For technical questions, contact: [e-mail]
Revision: 11-Aug-08 1

VOLTAGE

CODE

04 400 500

08 800 900

12 1200 1300

16 1600 1700

18 1800 1900

20 2000 2100

DRM/VRRM

PEAK AND OFF-STATE VOLTAGE

, MAXIMUM REPETITIVE

V

V

, MAXIMUM NON-REPETITIVE

RSM

PEAK VOLTAGE

V

I

DRM/IRRM

AT T

= TJ MAXIMUM

J

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MAXIMUM

mA

50

ST300CPbF Series

Vishay High Power Products

Phase Control Thyristors

(Hockey PUK Version), 650 A

ABSOLUTE MAXIMUM RATINGS

PARAMETER SYMBOL TEST CONDITIONS VALUES UNITS

Maximum average on-state current
at heatsink temperature

Maximum RMS on-state current I

I

T(RMS)

Maximum peak, one-cycle
non-repetitive surge current

2

Maximum I

Maximum I

t for fusing I2t

2

√t for fusing I2√t t = 0.1 to 10 ms, no voltage reapplied 3200 kA2√s

Low level value of threshold voltage V

High level value of threshold voltage V

Low level value of on-state slope resistance r

High level value of on-state slope resistance r

Maximum on-state voltage V

Maximum holding current I

Typical latching current I

T(AV)

180° conduction, half sine wave
double side (single side) cooled

DC at 25 °C heatsink temperature double side cooled 1290

I

TSM

T(TO)1

T(TO)2

t1

t2

TM

H

L

t = 10 ms

t = 8.3 ms 8380

t = 10 ms

t = 8.3 ms 7040

t = 10 ms

t = 8.3 ms 292

t = 10 ms

t = 8.3 ms 207

(16.7 % x π x I
(I > π x I
(16.7 % x π x I
(I > π x I

Ipk = 1635 A, TJ = TJ maximum, tp = 10 ms sine pulse 2.18 V

TJ = 25 °C, anode supply 12 V resistive load

No voltage
reapplied

100 % V
reapplied

No voltage

RRM

Sinusoidal half wave,
initial T

= TJ maximum

J

reapplied

100 % V

RRM

reapplied

< I < π x I

T(AV)

), TJ = TJ maximum 0.98

T(AV)

< I < π x I

T(AV)

), TJ = TJ maximum 0.73

T(AV)

), TJ = TJ maximum 0.97

T(AV)

), TJ = TJ maximum 0.74

T(AV)

650 (320) A

55 (75) °C

8000

6730

320

226

600

1000

A

kA2s

V

mΩ

mA

SWITCHING

PARAMETER SYMBOL TEST CONDITIONS VALUES UNITS

Maximum non-repetitive rate
of rise of turned-on current

Typical delay time t

Typical turn-off time t

dI/dt

d

q

Gate drive 20 V, 20 Ω, t
T

= TJ maximum, anode voltage ≤ 80 % V

J

≤ 1 µs

r

DRM

Gate current 1 A, dIg/dt = 1 A/µs
V

= 0.67 % V

d

, TJ = 25 °C

DRM

ITM = 300 A, TJ = TJ maximum, dI/dt = 40 A/µs,
V

= 50 V, dV/dt = 20 V/µs, gate 0 V 100 Ω, tp = 500 µs

R

1000 A/µs

1.0
µs

100

BLOCKING

PARAMETER SYMBOL TEST CONDITIONS VALUES UNITS

Maximum critical rate of rise
of off-state voltage

Maximum peak reverse and
off-state leakage current

dV/dt T

I

RRM,

I

DRM

= TJ maximum linear to 80 % rated V

J

TJ = TJ maximum, rated V

DRM/VRRM

DRM

500 V/µs

applied 50 mA

www.vishay.com For technical questions, contact: [e-mail]

Document Number: 94403

2 Revision: 11-Aug-08

ST300CPbF Series

Phase Control Thyristors

Vishay High Power Products

(Hockey PUK Version), 650 A

TRIGGERING

PARAMETER SYMBOL TEST CONDITIONS

Maximum peak gate power P

Maximum average gate power P

Maximum peak positive gate current I

Maximum peak positive gate voltage + V

Maximum peak negative gate voltage - V

G(AV)

GM

TJ = TJ maximum, tp ≤ 5 ms 10.0

GM

TJ = TJ maximum, f = 50 Hz, d% = 50 2.0

TJ = TJ maximum, tp ≤ 5 ms 3.0 A

GM

TJ = TJ maximum, tp ≤ 5 ms

GM

TJ = - 40 °C

DC gate current required to trigger I

DC gate voltage required to trigger V

DC gate current not to trigger I

DC gate voltage not to trigger V

GT

GT

GD

GD

= 25 °C 100 200

J

T

= 125 °C 50 -

J

TJ = - 40 °C 2.5 -

= 25 °C 1.8 3.0

T

J

= 125 °C 1.1 -

T

J

Maximum required gate trigger/
current/voltage are the lowest
value which will trigger all units
12 V anode to cathode applied

Maximum gate current/voltage
not to trigger is the maximum

TJ = TJ maximum

value which will not trigger any
unit with rated V

anode to

DRM

cathode applied

VALUES

TYP. MAX.

20

5.0

200 -

10.0 mA

0.25 V

UNITS

W

V

mAT

V

THERMAL AND MECHANICAL SPECIFICATIONS

PARAMETER SYMBOL TEST CONDITIONS VALUES UNITS

Maximum operating junction temperature range T

Maximum storage temperature range T

Maximum thermal resistance, junction to heatsink R

Maximum thermal resistance, case to heatsink R

J

Stg

thJ-hs

thC-hs

DC operation single side cooled 0.09

DC operation double side cooled 0.04

DC operation single side cooled 0.02

DC operation double side cooled 0.01

Mounting force, ± 10 %

Approximate weight 83 g

Case style See dimensions - link at the end of datasheet TO-200AB (E-PUK)

ΔR

CONDUCTION ANGLE

CONDUCTION

thJ-hs

SINUSOIDAL CONDUCTION RECTANGULAR CONDUCTION

SINGLE SIDE DOUBLE SIDE SINGLE SIDE DOUBLE SIDE

TEST CONDITIONS UNITS

180° 0.010 0.011 0.007 0.007

120° 0.012 0.012 0.012 0.013

90° 0.015 0.015 0.016 0.017

= TJ maximum K/W

T

J

60° 0.022 0.022 0.023 0.023

30° 0.036 0.036 0.036 0.037

Note

• The table above shows the increment of thermal resistance R

when devices operate at different conduction angles than DC

thJ-hs

- 40 to 125

- 40 to 150

9800

(1000)

°C

K/W

N

(kg)

Document Number: 94403 For technical questions, contact: [e-mail]

www.vishay.com

Revision: 11-Aug-08 3