Vishay ST280CHPbF Series Data Sheet

ST280CHPbF Series

Vishay High Power Products

Phase Control Thyristors

(Hockey PUK Version), 500 A

FEATURES

• Center amplifying gate

• Metal case with ceramic insulator

• International standard case TO-200AB (A-PUK)

TO-200AB (A-PUK)

• Extended temperature range

• Lead (Pb)-free

PRODUCT SUMMARY

I

T(AV)

500 A

TYPICAL APPLICATIONS

• DC motor controls

• Controlled DC power supplies

• AC controllers

MAJOR RATINGS AND CHARACTERISTICS

PARAMETER TEST CONDITIONS VALUES UNITS

I

T(AV)

I

T(RMS)

I

TSM

2

I

t

V

DRM/VRRM

t

q

T

J

T

hs

T

hs

50 Hz 7200

60 Hz 7500

50 Hz 260

60 Hz 230

Typical 100 µs

500 A

80 °C

1130 A

25 °C

A

kA2s

400 to 600 V

- 40 to 150 °C

RoHS

COMPLIANT

ELECTRICAL SPECIFICATIONS

VOLTAGE RATINGS

V

TYPE NUMBER

ST280CH..C

Document Number: 94401 For technical questions, contact: [e-mail]
Revision: 11-Aug-08 1

VOLTAGE

CODE

04 400 500

06 600 700

DRM/VRRM

REPETITIVE PEAK AND

OFF-STATE VOLTAGE

, MAXIMUM

V

V

, MAXIMUM

NON-REPETITIVE PEAK VOLTAGE

RSM

V

I

DRM/IRRM

AT T

= TJ MAXIMUM

J

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MAXIMUM

mA

75

ST280CHPbF Series

Vishay High Power Products

Phase Control Thyristors

(Hockey PUK Version), 500 A

ABSOLUTE MAXIMUM RATINGS

PARAMETER SYMBOL TEST CONDITIONS VALUES UNITS

Maximum average on-state current
at heatsink temperature

Maximum RMS on-state current I

I

T(RMS)

Maximum peak, one-cycle
non-repetitive surge current

2

Maximum I

Maximum I

t for fusing I2t

2

√t for fusing I2√t t = 0.1 to 10 ms, no voltage reapplied 2600 kA2√s

Low level value of threshold voltage V

High level value of threshold voltage V

Low level value of on-state slope resistance r

High level value of on-state slope resistance r

Maximum on-state voltage V

Maximum holding current I

Maximum (typical) latching current I

T(AV)

180° conduction, half sine wave
double side (single side) cooled

DC at 25 °C heatsink temperature double side cooled 1130

I

TSM

T(TO)1

T(TO)2

t1

t2

TM

H

L

t = 10 ms

t = 8.3 ms 7500

t = 10 ms

t = 8.3 ms 6300

t = 10 ms

t = 8.3 ms 235

t = 10 ms

t = 8.3 ms 165

(16.7 % x π x I
(I > π x I
(16.7 % x π x I
(I > π x I

Ipk = 1000 A, TJ = TJ maximum, tp = 10 ms sine pulse 1.35 V

TJ = 25 °C, anode supply 12 V resistive load

No voltage
reapplied

100 % V
reapplied

No voltage

RRM

Sinusoidal half wave,
initial T

= TJ maximum

J

reapplied

100 % V

RRM

reapplied

< I < π x I

T(AV)

), TJ = TJ maximum 0.88

T(AV)

< I < π x I

T(AV)

), TJ = TJ maximum 0.47

T(AV)

), TJ = TJ maximum 0.84

T(AV)

), TJ = TJ maximum 0.50

T(AV)

500 (185) A

80 (110) °C

7200

6000

260

180

600

1000 (300)

A

kA2s

V

mΩ

mA

SWITCHING

PARAMETER SYMBOL TEST CONDITIONS VALUES UNITS

Maximum non-repetitive rate of rise
of turned-on current

Typical delay time t

Typical turn-off time t

dI/dt

d

q

Gate drive 20 V, 20 Ω, t
T

= TJ maximum, anode voltage ≤ 80 % V

J

≤ 1 µs

r

DRM

Gate current 1 A, dIg/dt = 1 A/µs
V

0.67 % V

d

, TJ = 25 °C

DRM

ITM = 300 A, TJ = TJ maximum, dI/dt = 20 A/µs,
V

= 50 V, dV/dt = 20 V/µs, gate 0 V 100 Ω, tp = 500 µs

R

1000 A/µs

1.0
µs

100

BLOCKING

PARAMETER SYMBOL TEST CONDITIONS VALUES UNITS

Maximum critical rate of rise of
off-state voltage

Maximum peak reverse and
off-state leakage current

dV/dt T

,

I

RRM

I

DRM

= TJ maximum linear to 80 % rated V

J

TJ = TJ maximum, rated V

DRM/VRRM

DRM

500 V/µs

applied 75 mA

www.vishay.com For technical questions, contact: [e-mail]

Document Number: 94401

2 Revision: 11-Aug-08

ST280CHPbF Series

Phase Control Thyristors

Vishay High Power Products

(Hockey PUK Version), 500 A

TRIGGERING

PARAMETER SYMBOL TEST CONDITIONS

Maximum peak gate power P

Maximum average gate power P

Maximum peak positive gate current I

Maximum peak positive gate voltage + V

Maximum peak negative gate voltage - V

GM

G(AV)

GM

TJ = TJ maximum, tp ≤ 5 ms 10.0

TJ = TJ maximum, f = 50 Hz, d% = 50 2.0

TJ = TJ maximum, tp ≤ 5 ms 3.0 A

GM

TJ = TJ maximum, tp ≤ 5 ms

GM

TJ = - 40 °C

DC gate current required to trigger I

DC gate voltage required to trigger V

DC gate current not to trigger I

DC gate voltage not to trigger V

GT

GT

GD

GD

= 25 °C 90 150

J

T

= 150 °C 30 -

J

TJ = - 40 °C 2.9 -

= 25 °C 1.8 3.0

T

J

T

= 150 °C 1.0 -

J

Maximum required gate trigger/
current/voltage are the lowest
value which will trigger all units
12 V anode to cathode applied

Maximum gate current/voltage
not to trigger is the maximum

TJ = TJ maximum

value which will not trigger any
unit with rated V

DRM

anode to

cathode applied

VALUES

TYP. MAX.

20

5.0

180 -

10 mA

0.30 V

UNITS

W

V

mAT

V

THERMAL AND MECHANICAL SPECIFICATIONS

PARAMETER SYMBOL TEST CONDITIONS VALUES UNITS

Maximum operating junction and
storage temperature range

Maximum thermal resistance,
junction to heatsink

Maximum thermal resistance,
case to heatsink

Mounting force, ± 10 %

Approximate weight 50 g

Case style See dimensions - link at the end of datasheet TO-200AB (A-PUK)

ΔR

CONDUCTION

thJ-hs

CONDUCTION ANGLE

SINUSOIDAL CONDUCTION RECTANGULAR CONDUCTION

SINGLE SIDE DOUBLE SIDE SINGLE SIDE DOUBLE SIDE

180° 0.016 0.017 0.011 0.011

120° 0.019 0.019 0.019 0.019

90° 0.024 0.024 0.026 0.026

60° 0.035 0.035 0.036 0.037

30° 0.060 0.060 0.060 0.061

Note

• The table above shows the increment of thermal resistance R

T

R

J

R

, T

thJ-hs

thC-hs

Stg

DC operation single side cooled 0.17

DC operation double side cooled 0.08

DC operation single side cooled 0.033

DC operation double side cooled 0.017

when devices operate at different conduction angles than DC

thJ-hs

- 40 to 150 °C

4900
(500)

TEST CONDITIONS UNITS

= TJ maximum K/W

T

J

K/W

N

(kg)

Document Number: 94401 For technical questions, contact: [e-mail]

www.vishay.com

Revision: 11-Aug-08 3