Bulletin I25199 rev. B 02/00
ST2600C..R SERIES
PHASE CONTROL THYRISTORS Hockey Puk Version
Features
Double side cooling
High surge capability
High mean current
Fatigue free
Typical Applications
DC motor controls
Controlled DC power supplies
AC controllers
Major Ratings and Characteristics
Parameters ST2600C..R Units
I
T(AV)
I
T(AV)
I
T(RMS)
I
TSM
@ T
C
@ T
hs
@ T
hs
@ 50Hz 46000 A
@ 60Hz 48200 A
2220 A
80 °C
2630 A
55 °C
4800 A
25 °C
2630A
(R-PUK)
I2t@
V
DRM/VRRM
t
q
T
J
50Hz 10580 KA2s
@
60Hz 9640 KA2s
typical 400 µs
max. 125 °C
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2000 to 3000 V
1
ST2600C..R Series
Bulletin I25199 rev. B 02/00
ELECTRICAL SPECIFICATIONS
Voltage Ratings
Voltage V
DRM/VRRM
Type number Code peak and off-state voltage repetitive peak voltage
20 2000 2100
22 2200 2300
ST2600C..R 250
24 2400 2500
26 2600 2700
28 2800 2900
30 3000 3100
On-state Conduction
Parameter ST2600C..R Units Conditions
I
Max. average on-state current 2220 (1440) A
T(AV)
@ Case temperature 80 °C
I
Max. average on-state current 2630 (1160) A
T(AV)
@ Heatsink temperature 55 (85) °C
Max. RMS on-state current 4800 A DC @ 25°C heatsink temperature double side cooled
I
T(RMS)
Max. peak, one-cycle No voltage
I
TSM
non-repetitive surge current reapplied
2
t Maximum I2t for fusing No voltage Initial TC = 125°C
I
V
Max. value of threshold voltage 0.89 V TJ = TJ max.
T(TO)
r
Max. value of on-state slope
t
resistance
V
Max. on-state voltage 1.45 V Ipk= 2900A, TC = 25°C
TM
Max. (typical) latching current 300 (100) mA TJ = 25°C, VD = 5V
I
L
, max. repetitive V
, maximum non- I
RSM
DRM/IRRM
@ TC = 125°C
VVmA
180° conduction, half sine wave
double side (single side [anode side]) cooled
46000
48200
36800
38500
10580
9640
6770
6150
0.19 T
A
KA2s
mΩ
t = 10ms
t = 8.3ms
t = 10ms
t = 8.3ms
t = 10ms
t = 8.3ms
t = 10ms
t = 8.3ms
= TJ max.
J
50% V
RRM
reapplied Sinusoidal half wave,
reapplied
50% V
RRM
reapplied
max.
Switching
Parameter ST2600C..R Units Conditions
di/dt Max. repetitive 50Hz (no repetitive) From 67% V
rate of rise of turned-on current T
Maximum delay time 2.0
t
d
t
Typical turn-off time 400
q
150 (300) A/µs
µs
= TJ max.
J
Gate drive 30V, 15Ω, Vd = 67% V
Rise time 0.5µs
= 800A, tp = 1ms, TJ = TJ max, V
I
T
/dt = 20A/µs, V
dI
RR
2
gate drive 20V, 20Ω, tr = 1µs
DRM
DRM, TJ
RM
dV/dt = 20V/µs linear
DRM,
DR =
67% V
= 25°C
= 50V,
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ST2600C..R Series
Bulletin I25199 rev. B 02/00
Blocking
Parameter ST2600C..R Units Conditions
dv/dt Maximum linear rate of rise of
off-state voltage
I
Max. peak reverse and off-state
RRM
leakage current
I
DRM
Triggering
Parameter ST2600C..R Units Conditions
P
Maximum peak gate power 150 tp = 100µs
GM
P
Maximum average gate power 10
G(AV)
I
Max. peak positive gate current 30 A Anode positive with respect to cathode
GM
V
Max. peak positive gate voltage 30 V Anode positive with respect to cathode
GM
-VGMMax. peak negative gate voltage 0.25 V Anode negative with respect to cathode
I
Maximum DC gate current
GT
required to trigger
V
Maximum gate voltage required
GT
to trigger
V
DC gate voltage not to trigger 0.25 V TC = 125°C
GD
500 V/µs TJ = TJ max. to 67% rated V
250 mA TJ = 125°C rated V
DRM/VRRM
W
400 mA TC = 25°C, V
4VT
= 25°C, V
C
DRM
DRM
= 5V
= 5V
Max. gate current/voltage not to
trigger is the max. value which
will not trigger any unit with rated
anode-to-cathode applied
V
DRM
DRM
applied
Thermal and Mechanical Specification
Parameter ST2600C..R Units Conditions
TJ max. Max. operating temperature 125 On-state (conducting)
Max. storage temperature range -55 to 125
T
stg
R
Thermal resistance, junction 0.019 DC operation single side cooled
thJ-C
to case 0.0095 DC operation double side cooled
Thermal resistance, case 0.004 Single side cooled
R
th(C-h)
to heatsink 0.002 Double side cooled
F Mounting force ± 10%
43000
(4400)
wt Approximate weight 1600 g
Case style (R-PUK) See Outline Table
∆R
Conduction
thJ-C
(The following table shows the increment of thermal resistence R
°C
K/W
K/W
N
(Kg)
when devices operate at different conduction angles than DC)
thJ-C
Conduction angle Single side Double side Units Conditions
180° 0.0010 0.0010 T
120° 0.0017 0.0017 K/W
60° 0.0044 0.0044
J
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Clamping force 43KN with
mounting compound
= TJ max.
3
ST2600C..R Series
Bulletin I25199 rev. B 02/00
Ordering Information Table
Device Code
ST 260 0 C 30 R 1
1 - Thyristor
2 - Essential part number
3 - 0 = Converter grade
4 - C = Ceramic Puk
5 - Voltage code: Code x 100 = V
6 - R = Puk Case
7 - 0 = Eyelet terminals (Gate and Auxiliary Cathode Unsoldered Leads)
8 - Critical dv/dt: None = 500V/µsec (Standard selection)
Outline Table
51 2 3
4
(See Voltage Rating Table)
RRM
7
6 8
1 = Fast-on terminals (Gate and Auxiliary Cathode Unsoldered Leads)
2 = Eyelet terminals (Gate and Auxiliary Cathode Soldered Leads)
3 = Fast-on terminals (Gate and Auxiliary Cathode Soldered Leads)
L = 1000V/µsec (Special selection)
112.5 (4.4) DIA. MAX.
73.2 (2.9) DIA. MAX.
TWO PLACES
GATE
1.5 (0.06) DIA.
37.7 (1.5 ) M A X.
ANODE
CATHODE
HOLE 1.5 (0.06)
DIA. MAX.
4.76 (0.2)
20° ± 5°
)
4
2
.
0
(
3
.
6
(R-PUK)
All dimensions in millimeters (inches)
3.7 (0.15) DIA. NOM. X
2.1 (0.1) DEEP MIN.
BOTH ENDS
4
Quote between upper and lower
pole pieces has to be considered
after application of Mounting Force
(see Thermal and Mechanical
Specification)
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ST2600C..R Series
0
1000
2000
3000
4000
5000
6000
7000
8000
9000
0 1000 2000 3000 4000 5000
RMS Limit
Conduction Angle
ST2600C..R Series
T = 125˚C
J
DC
180˚
120˚
60˚
3
10000
15000
20000
25000
30000
35000
40000
45000
1 10 100
ST2600C..R Series
Initial T = 125˚C
@ 60 Hz 0.0083 s
@ 50 Hz 0.0100 s
At Any Rated Load Condition And With
50% Rated V Applied Following Surge
RRM
J
Bulletin I25199 rev. B 02/00
130
120
110
ST2600C..R Series
(Single Side Cooled)
R (DC) = 0.023 K/W
thJ-hs
100
90
80
70
Conduction Angle
60
50
40
30
60˚
120˚
180˚
20
0 1000 2000 3000 4000
Maximum Allowable Heatsink Temperature (°C)
Average On-state Current (A)
Fig. 1 - Current Ratings Characteristics Fig. 2 - Current Ratings Characteristics
DC
130
120
110
ST2600C..R Series
(Double Side Cooled)
R (DC) = 0.0115 K/W
thJ-hs
100
90
80
Conduction Angle
70
60
50
60˚
120˚
40
30
20
0 1000 2000 3000 4000 5000
Maximum Allowable Heatsink Temperature (°C)
Average On-state Current (A)
10000
T = 125˚C
J
1000
180˚
DC
Maximum Average On-state Power Loss (W)
Peak Half Sine Wave On-state Current (A)
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Average On-state Current (A)
Fig. 3- On-state Power Loss Characteristics
Number Of Equal Amplitude Half Cycle Current Pulses (N)
Fig.5 - Maximum Non-Repetitive Surge Current
Single and Double Side Cooled
ST2600C..R Series
100
Maximum Average On-state Power Loss (W)
0.5 1 1.5 2 2.5
Average On-state Current (A)
Fig. 4- On-state Power Loss Characteristics
75000
Maximum Non Repetitive Surge Current
70000
65000
Versus Pulse Train Duration. Control
Of Conduction May Not Be Maintained.
50% Rated V Reapplied
Initial T = 125˚C
J
RRM
60000
55000
50000
45000
40000
ST2600C..R Series
35000
30000
Peak Half Sine Wave On-state Current (A)
110
Pulse Train Duration (s)
Fig. 6 - Maximum Non-Repetitive Surge Current
Single and Double Side Cooled
5
ST2600C..R Series
1000
10000
1 10 100
T = 125˚C
J
ST2600C..R Series
Q max.
Q min.
rr
rr
Q
rr
I
T
d
I
I
(REC)
RM
t
d
t
T
t
=
3
m
s
p
0.0001
0.001
0.01
0.1
0.001 0.01 0.1 1 10 100
Steady State Value
R = 0.019 K/W
(Single Side Cooled)
R = 0.0095 K/W
(Double Side Cooled)
(DC Operation)
thJ-C
thJ-C
ST2600C..R Series
Bulletin I25199 rev. B 02/00
Total Stroed Charge - Qrr (µC)
(K/W)
thJ-hs
Rate Of Decay Of On-state Current - di/dt (A/µs)
Fig. 7 - Stored Charged
Transient Thermal Impedance Z
Square Wave Pulse Duration (s)
Fig. 10 - Thermal Impedance Z
100
(1) PGM = 2W
(2) PGM = 4W
(3) PGM = 8W
(4) PGM = 20W
(5) PGM = 50W
10
(6) PGM =100W
1
VGD
IGD
Instantaneous Gate Voltage (V)
Device: ST2600C..R Series
0.1
0.001 0.01 0.1 1 10
Instantaneous Gate Current (A)
6
Characteristics
thJ-hs
Tj=25 ˚ C
Tj=125 ˚ C
Frequency Limited by PG(AV)
Fig. 11 - Gate Characteristics
(6)
(5)
Tj=-40 ˚ C
(4)
(3)
(2)
(1)
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