Bulletin I25199 rev. B 02/00
ST2600C..R SERIES
PHASE CONTROL THYRISTORS Hockey Puk Version
Features
Double side cooling
High surge capability
High mean current
Fatigue free
Typical Applications
DC motor controls
Controlled DC power supplies
AC controllers
Major Ratings and Characteristics
Parameters ST2600C..R Units
I
T(AV)
I
T(AV)
I
T(RMS)
I
TSM
@ T
C
@ T
hs
@ T
hs
@ 50Hz 46000 A
@ 60Hz 48200 A
2220 A
80 °C
2630 A
55 °C
4800 A
25 °C
2630A
(R-PUK)
I2t@
V
DRM/VRRM
t
q
T
J
50Hz 10580 KA2s
@
60Hz 9640 KA2s
typical 400 µs
max. 125 °C
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2000 to 3000 V
1
ST2600C..R Series
Bulletin I25199 rev. B 02/00
ELECTRICAL SPECIFICATIONS
Voltage Ratings
Voltage V
DRM/VRRM
Type number Code peak and off-state voltage repetitive peak voltage
20 2000 2100
22 2200 2300
ST2600C..R 250
24 2400 2500
26 2600 2700
28 2800 2900
30 3000 3100
On-state Conduction
Parameter ST2600C..R Units Conditions
I
Max. average on-state current 2220 (1440) A
T(AV)
@ Case temperature 80 °C
I
Max. average on-state current 2630 (1160) A
T(AV)
@ Heatsink temperature 55 (85) °C
Max. RMS on-state current 4800 A DC @ 25°C heatsink temperature double side cooled
I
T(RMS)
Max. peak, one-cycle No voltage
I
TSM
non-repetitive surge current reapplied
2
t Maximum I2t for fusing No voltage Initial TC = 125°C
I
V
Max. value of threshold voltage 0.89 V TJ = TJ max.
T(TO)
r
Max. value of on-state slope
t
resistance
V
Max. on-state voltage 1.45 V Ipk= 2900A, TC = 25°C
TM
Max. (typical) latching current 300 (100) mA TJ = 25°C, VD = 5V
I
L
, max. repetitive V
, maximum non- I
RSM
DRM/IRRM
@ TC = 125°C
VVmA
180° conduction, half sine wave
double side (single side [anode side]) cooled
46000
48200
36800
38500
10580
9640
6770
6150
0.19 T
A
KA2s
mΩ
t = 10ms
t = 8.3ms
t = 10ms
t = 8.3ms
t = 10ms
t = 8.3ms
t = 10ms
t = 8.3ms
= TJ max.
J
50% V
RRM
reapplied Sinusoidal half wave,
reapplied
50% V
RRM
reapplied
max.
Switching
Parameter ST2600C..R Units Conditions
di/dt Max. repetitive 50Hz (no repetitive) From 67% V
rate of rise of turned-on current T
Maximum delay time 2.0
t
d
t
Typical turn-off time 400
q
150 (300) A/µs
µs
= TJ max.
J
Gate drive 30V, 15Ω, Vd = 67% V
Rise time 0.5µs
= 800A, tp = 1ms, TJ = TJ max, V
I
T
/dt = 20A/µs, V
dI
RR
2
gate drive 20V, 20Ω, tr = 1µs
DRM
DRM, TJ
RM
dV/dt = 20V/µs linear
DRM,
DR =
67% V
= 25°C
= 50V,
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