Vishay ST2100C..R SERIES Data Sheet

Bulletin I25198 rev. B 02/00
ST2100C..R SERIES
PHASE CONTROL THYRISTORS Hockey Puk Version
Features
Double side cooling
Fatigue free
Typical Applications
DC motor controls Controlled DC power supplies
AC controllers
Major Ratings and Characteristics
Parameters ST2100C..R Units
I
T(AV)
I
T(AV)
I
T(RMS)
I
TSM
@ T
C
@ T
hs
@ T
hs
@ 50Hz 36250 A
@ 60Hz 38000 A
1770 A
80 °C
2090 A
55 °C
3850 A
25 °C
2090A
(R-PUK)
I2t@
V
DRM/VRRM
t
q
T
J
50Hz 6570 KA2s
@
60Hz 5990 KA2s
typical 500 µs
max. 125 °C
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3000 to 4200 V
1
ST2100C..R Series
Bulletin I25198 rev. B 02/00
ELECTRICAL SPECIFICATIONS
Voltage Ratings
Voltage V
DRM/VRRM
Type number Code peak and off-state voltage repetitive peak voltage
30 3000 3100
32 3200 3300
34 3400 3500
ST2100C..R 250
36 3600 3700
38 3800 3900 40 4000 4100
42 4200 4300
On-state Conduction
Parameter ST2100C..R Units Conditions
I
Max. average on-state current 1770 (1150) A
T(AV)
@ Case temperature 80 °C
Max. average on-state current 2090 (940) A
I
T(AV)
@ Heatsink temperature 55 (85) °C
Max. RMS on-state current 3850 A DC @ 25°C heatsink temperature double side cooled
I
T(RMS)
I
Max. peak, one-cycle No voltage
TSM
non-repetitive surge current reapplied
2
t Maximum I2t for fusing No voltage Initial TC = 125°C
I
V
Max. value of threshold voltage 1.03 V TJ = TJ max.
T(TO)
r
Max. value of on-state slope
t
resistance
Max. on-state voltage 1.875 V Ipk= 2900A, TC = 25°C
V
TM
I
Typical latching current 300 mA TJ = 25°C, VD = 5V
L
, max. repetitive V
, maximum non- I
RSM
DRM/IRRM
@ TC = 125°C
VVmA
180° conduction, half sine wave
double side (single side [anode side]) cooled
A
KA2s
m
t = 10ms
t = 8.3ms
t = 10ms
t = 8.3ms
t = 10ms
t = 8.3ms
t = 10ms
t = 8.3ms
50% V
RRM
reapplied Sinusoidal half wave,
reapplied
50% V
RRM
reapplied
36250
38000
29000
30350
6570
5990
4205
3820
0.32 TJ = TJ max.
max.
Switching
Parameter ST2100C..R Units Conditions
di/dt Max. repetitive 50Hz (no repetitive) From 67% V
rate of rise of turned-on current T
t
Maximum delay time 2.5
d
t
Typical turn-off time 500
q
150 (300) A/µs
µs
= TJ max.
J
Gate drive 30V, 15Ω, Vd = 67% V
Rise time 0.5µs
= 1000A, tp = 1ms, TJ = TJ max, V
I
T
dI
/dt = 2A/µs, V
RR
2
to 1000A gate drive 20V, 10, tr = 0.5µs
DRM
= 25°C
DRM, TJ
= 50V,
RM
DR =
67% V
DRM, dVDR
/dt = 8V/µs linear
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