Bulletin I25177 rev. C 12/96
ST203S SERIES
INVERTER GRADE THYRISTORS
Features
All diffused design
Center amplifying gate
Guaranteed high dv/dt
Guaranteed high di/dt
High surge current capability
Low thermal impedance
High speed performance
Typical Applications
Inverters
Choppers
Induction heating
All types of force-commutated converters
Major Ratings and Characteristics
Parameters ST203S Units
I
T(AV)
I
T(RMS)
I
TSM
@ T
C
@ 50Hz 5260 A
@ 60Hz 5510 A
205 A
85 °C
320 A
Stud Version
205A
I2t@
V
DRM/VRRM
range 20 to 30 µs
t
q
T
J
50Hz 138 KA2s
@ 60Hz 126 KA
1000 to 1200 V
- 40 to 125 °C
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2
s
case style
TO-209AB (TO-93)
1
ST203S Series
Bulletin I25177 rev. C 12/96
ELECTRICAL SPECIFICATIONS
Voltage Ratings
Voltage V
DRM/VRRM
Type number Code repetitive peak voltage non-repetitive peak voltage @ T
ST203S 40
10 1000 1100
12 1200 1300
Current Carrying Capability
, maximum V
, maximum I
RSM
DRM/IRRM
VVmA
max.
= TJ max.
J
I
Frequency Units
180
TM
o
el
180oel
I
TM
I
TM
100µs
50Hz 580 400 900 640 6180 4680
400Hz 570 380 940 650 2980 2150
1000Hz 520 320 930 630 1730 1200 A
2500Hz 370 210 780 510 890 580
Recovery voltage Vr 50 50 50 50 50 50
Voltage before turn-on Vd V
DRM
V
DRM
V
DRM
Rise of on-state current di/dt 50 50 - - - - A/µs
Case temperature 60 85 60 85 60 85 °C
Equivalent values for RC circuit 47Ω / 0.22µF 47Ω / 0.22µF 47Ω / 0.22µF
On-state Conduction
Parameter ST203S Units Conditions
I
Max. average on-state current 205 A 180° conduction, half sine wave
T(AV)
@ Case temperature 85 °C
I
Max. RMS on-state current 320 DC @ 76°C case temperature
T(RMS)
I
Max. peak, one half cycle, 5260 t = 10ms No voltage
TSM
non-repetitive surge current 5510 A t = 8.3ms reapplied
4420 t = 10ms 100% V
4630 t = 8.3ms reapplied Sinusoidal half wave,
2
t Maximum I2t for fusing 138 t = 10ms No voltage Initial TJ = TJ max
I
126 t = 8.3ms reapplied
98 t = 10ms 100% V
KA2s
89 t = 8.3ms reapplied
2
I
√t Maximum I2√t for fusing 1380 KA2√s t = 0.1 to 10ms, no voltage reapplied
RRM
RRM
V
2
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ST203S Series
Bulletin I25177 rev. C 12/96
On-state Conduction
Parameter ST203S Units Conditions
VTMMax. peak on-state voltage 1.72 ITM= 600A, TJ = TJ max, tp = 10ms sine wave pulse
V
Low level value of threshold
T(TO)1
voltage
High level value of threshold
V
T(TO)2
voltage
Low level value of forward
r
t1
slope resistance
High level value of forward
r
t2
slope resistance
Maximum holding current 600 TJ = 25°C, IT > 30A
I
H
Typical latching current 1000 TJ = 25°C, VA= 12V, Ra = 6Ω, IG= 1A
I
L
Switching
Parameter ST203S Units Conditions
di/dt Max. non-repetitive rate of rise T
of turned-on current I
t
Typical delay time 0.79
d
t
Max. turn-off time 20 30
q
1.17 (16.7% x π x I
V
1.20 (I > π x I
0.92 (16.7% x π x I
mΩ
0.87 (I > π x I
mA
= TJ max, V
1000 A/µs
Min Max
J
= 2 x di/dt
TM
= 25°C, V
T
J
Resistive load, Gate pulse: 10V, 5Ω source
µs
T
= TJ max, I
J
= 50V, tp = 500µs, dv/dt: see table in device code
V
R
< I < π x I
T(AV)
), TJ = TJ max.
T(AV)
< I < π x I
T(AV)
), TJ = TJ max.
T(AV)
DRM
= rated V
DM
= 300A, commutating di/dt = 20A/µs
TM
= rated V
DRM, ITM
T(AV)
T(AV)
DRM
), TJ = TJ max.
), TJ = TJ max.
= 50A DC, tp= 1µs
Blocking
Parameter ST203S Units Conditions
dv/dt Maximum critical rate of rise of T
off-state voltage available on request
Max. peak reverse and off-state
I
RRM
leakage current
I
DRM
500 V/µs
40 mA T
Triggering
Parameter ST203S Units Conditions
PGMMaximum peak gate power 60
Maximum average gate power 10
P
G(AV)
I
Max. peak positive gate current 10 A TJ = TJ max, tp ≤ 5ms
GM
+VGMMaximum peak positive
gate voltage
Maximum peak negative
-V
GM
gate voltage
Max. DC gate current required
I
GT
to trigger
V
Max. DC gate voltage required
GT
to trigger
Max. DC gate current not to trigger 20 mA
I
GD
V
Max. DC gate voltage not to trigger 0.25 V
GD
20
5
200 m A
3V
WTJ = TJ max, f = 50Hz, d% = 50
VTJ = TJ max, tp ≤ 5ms
T
TJ = TJ max, rated V
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= TJ max., linear to 80% V
J
= TJ max, rated V
J
= 25°C, VA = 12V, Ra = 6Ω
J
DRM/VRRM
applied
DRM
, higher value
DRM
applied
3
ST203S Series
Bulletin I25177 rev. C 12/96
Thermal and Mechanical Specifications
Parameter ST203S Units Conditions
TJMax. junction operating temperature range -40 to 125
Max. storage temperature range -40 to 150
T
stg
R
Max. thermal resistance, junction to case 0.105 DC operation
thJC
Max. thermal resistance, case to heatsink 0.04 Mounting surface, smooth, flat and greased
R
thCS
T Mounting torque, ± 10% 31 Nm
(275) (Ibf-in)
24.5 Nm
(210) (Ibf-in)
wt Approximate weight 280 g
Case style TO-209AB (TO-93) See Outline Table
∆R
Conduction
thJC
(The following table shows the increment of thermal resistence R
Conduction angle Sinusoidal conduction Rectangular conduction Units Conditions
180° 0.016 0.012
120° 0.019 0.020
90° 0.025 0.027 K/W T
60° 0.036 0.037
30° 0.060 0.060
°C
K/W
Non lubricated threads
Lubricated threads
when devices operate at different conduction angles than DC)
thJC
= TJ max.
J
Ordering Information Table
Device Code
1 - Thyristor
2 - Essential part number
3 - 3 = Fast turn off
4 - S = Compression bonding Stud
5 - Voltage code: Code x 100 = V
6 - P = Stud base 3/4" 16UNF-2A
M = Stud base metric threads M16/ x 1.5
7 - Reapplied dv/dt code (for tq test condition)
8 -tq code
9 - 0 = Eyelet terminals (Gate and Aux. Cathode Leads)
1 = Fast-on terminals (Gate and Aux. Cathode Leads)
2 = Flag terminals (For Cathode and Gate Terminals)
- Critical dv/dt:
10
None = 500V/µsec (Standard value)
L = 1000V/µsec (Special selection)
ST 20 3 S 12 P F J 0
3
2
1
RRM
4
(See Voltage Ratings table)
4
5 689
7
dv/dt - t
dv/dt (V/µs) 20 50 100 200 400
tq(µs)
*Standard part number.
All other types available only on request.
combinations available
q
20 CK DK EK -- -25 CJ DJ EJ FJ * --
30 CH DH EH FH HH
10
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Outline Table
AMP. 280000-1
REF-250
CERAMIC HOUSING
10 (0.39)
+I
210 (8.26)
8.5 (0.33) DIA.
RED SILICON RUBBER
RED CATHODE
RED SHRINK
19 (0.75) MAX.
4.3 (0.17) DIA.
C.S. 0.4mm
(0.0006 s.i.)
WHITE GATE
220 (8.66) 10 (0.39)
WHITE SHRINK
FLEXIBLE LEAD
2
+
-
C.S. 25mm
(0.039 s.i.)
4 (0.16) MAX.
2
ST203S Series
Bulletin I25177 rev. C 12/96
.
N
MI
)
7
3
.
0
(
.
5
.
N
9
MI
)
6
8
.
0
(
2
2
Fast-on Terminals
90 (3.54) MIN.
MAX.
38.5 (1.52)
16 (0.63) MAX.
MAX.
27.5 (1.08)
35 (1.38) MAX.
* FOR METRIC DEVICE : M16 x 1.5 - LENGHT 21 (0.83) MAX.
Case Style TO-209AB (TO-93) Flag
All dimensions in millimeters (inches)
27.5 (1.08) MAX. DIA.
SW 32
3/4"-16UNF-2A *
Case Style TO-209AB (TO-93)
All dimensions in millimeters (inches)
CERAMIC HOUSING
FLAG TERMINALS
80 (3. 15) M A X.
38.5 (1.52) MAX.
16 (0. 63) M A X.
27.5 (1.08) MAX.
*FOR METRIC DEVICE. M16 X 1.5 - LENGHT 21 (0.83) MAX.
3/4"-16UNF-2A*
1.5 (0.06) DIA.
DIA. 27.5 (1.08) MAX.
SW 32
22 (0.89)
14 (0.55)
DIA. 6.5 (0.25)
13 (0.5 1)
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3 (0.12)
5
ST203S Series
Bulletin I25177 rev. C 12/96
130
ST2 03S Ser ie s
R (DC) = 0.105 K /W
thJC
120
110
100
30°
90
80
Maximum Allowable Case Temperature (°C)
0 40 80 120 160 200 240
Conduction An g le
60°
90°
120°
Average On-state Current (A)
Fig. 1 - Current Ratings Characteristics
350
180°
300
250
200
120°
90°
60°
30°
RMS Limit
150
100
50
0
Maximum Av erage On-state Pow er L oss (W)
0 40 80 120 160 200 240
Average On-state Current (A)
130
120
110
100
90
180°
Conduction Angle
ST203S Series
T = 125°C
J
0.1
6
K/
W
0
.
2
K
/
W
0
.
3
K
/
W
0
.
4
K
/
W
0
.
5
K
/
W
0
.
8
K
/
W
1
2
.
K
/W
80
70
Maxi mu m All o wa ble Cas e Tem p eratur e (°C)
0 50 100 150 200 250 300 350
R
0
.
1
t
h
K
S
/
A
W
=
0
.
0
8
25 50 75 100 125
Maximum Allowable Ambient Temperature (°C)
Fig. 3 - On-state Power Loss Characteristics
ST20 3S Se r ie s
R (DC) = 0.105 K/W
thJC
Conduction Period
30°
60°
90°
120°
180°
Average On-state Current (A)
Fig. 2 - Current Ratings Characteristics
K
/
W
-
D
e
l
t
a
R
DC
500
450
400
350
300
250
200
150
100
50
0
Maximum Average On-state Power Loss (W)
DC
180°
120°
90°
60°
30°
RMS Limit
0
50 100 150 200 250 300 350
Conduction Period
ST203S Series
T = 125°C
J
Average On-state Current (A)
R
t
h
S
A
0
=
.
1
0
.
K
0
/
8
W
K
0
.
1
6
0
.
2
0
.
3
0
.
4
0
.
5
0
.
8
1
.
2
/
W
K
/
K
/
W
K
/
W
K
/
W
K
/
W
K
/
W
K
W
/
-
W
D
e
l
t
a
R
25 50 75 100 125
Maxi mu m Al lowabl e Amb i en t Tempera ture (°C )
Fig. 4 - On-state Power Loss Characteristics
6
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ST203S Series
Bulletin I25177 rev. C 12/96
5000
At Any Rated Load Condit ion A nd W ith
Rated V Applied Following Surge.
4500
RRM
4000
Initi al T = 125°C
J
@ 60 Hz 0.0083 s
@ 50 Hz 0.0100 s
3500
3000
ST203S Series
2500
Peak Half Sine Wave On-state Current (A)
2000
110100
Numbe r Of Equal Am p litud e Half Cycle Cur ren t Pul ses (N)
Fig. 5 - Maximum Non-repetitive Surge Current
10000
ST 203S Ser ie s
1000
T = 25°C
J
T = 125°C
Instantaneous On-state Current (A)
100
1 1.5 2 2.5 3 3 .5 4
J
Ins ta n ta n eous On - s ta te Vo l tag e (V)
Fig. 7 - On-state Voltage Drop Characteristics
5500
Maximum Non Repetitive Surge Current
5000
Versus Pulse Train Duration. Control
Of Conduction May Not Be Main tained.
Initial T = 125°C
4500
4000
No Voltage Reapplied
Rated V Reapplied
RRM
3500
3000
2500
ST20 3S Series
Peak Half Sine Wave On-state Current (A)
2000
0.01 0.1 1
Pulse Train Duration (s)
Fig. 6 - Maximum Non-repetitive Surge Current
1
Steady State Value
R = 0.105 K/W
thJC
thJC
(DC Operation)
0.1
0.01
ST203S Series
0.001
Transient Thermal Impedance Z (K/W)
0.001 0.01 0.1 1 10
Square Wave Pulse Duration (s)
Fig. 8 - Thermal Impedance Z
Characteristic
thJC
J
250
200
ST203S Series
T = 125 °C
J
I = 500 A
TM
150
100
50
0
0 20406080100
Ma ximum Reverse Re c overy Charge - Qrr (µC)
Rate Of Fall Of On-state Current - di/dt (A/µs)
Fig. 9 - Reverse Recovered Charge Characteristics
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300 A
200 A
100 A
50 A
160
140
120
100
I = 500 A
TM
300 A
200 A
100 A
50 A
80
60
40
ST203S Series
20
0
Maximum Reve rse Reco very Curre nt - Irr (A)
0 20406080100
T = 125 °C
J
Rate Of Fall Of On-state Current - di/dt (A/µs)
Fig. 10 - Reverse Recovery Current Characteristics
7
ST203S Series
Bulletin I25177 rev. C 12/96
1E4
400
500
1000
1E3
1500
2500
3000
5000
Peak On-state Current (A)
1E2
1E1 1E2 1E3 1E4
200
tp
Snu bber circuit
R = 47 ohms
s
C = 0.22 µF
s
V = 80% V
D
100
ST203S Series
Si nusoidal pulse
T = 60°C
C
Pulse Basewidth (µs)
Fig. 11 - Frequency Characteristics
1E4
Snubber circuit
R = 47 ohms
s
C = 0.22 µF
s
V = 80% V
D
DRM
100
200
1E3
Peak On-state Current (A)
1E2
1E1 1E2 1E3 1E4
5000
3000
2500
1500
1000
500
400
ST203S S eries
Tra pezo idal pu lse
T = 60°C
C
di/dt = 50A/µs
Puls e Ba sewidth (µs)
Fig. 12 - Frequency Characteristics
50 H z
50 Hz
Snu bber circuit
R = 47 ohms
s
C = 0.22 µF
s
V = 80% V
200
tp
D
100
ST203S S e ries
Sinus oidal pulse
T = 85°C
C
DRM
400
500
1000
1500
2500
3000
5000
1E1
1E1 1E2 1E3 1E4
1E4
Pu ls e Basewid th (µs)
Snu bber ci rcuit
R = 47 ohms
s
C = 0.22 µF
s
V = 80% V
D
DRM
200
400
500
1000
1500
2500
3000
5000
1E1 1E2 1E3 1E4
1E1
1E4
100
50 Hz
ST203S Se ries
Trapezoidal pu lse
T = 85°C
C
di/dt = 50A/µs
Pulse Basewidth (µs)
DRM
50 Hz
1E4
Snu bber circ ui t
R = 47 ohms
s
C = 0.22 µF
s
V = 80% V
D
DRM
50 Hz
100
200
400
1500
1000
500
ST203S Series
Trapezoidal pulse
T = 60°C
C
tp
di/dt = 100A/µs
1E3
2500
3000
Peak On-state Current (A)
1E2
1E11E21E31E4
Snubber circuit
R = 47 ohms
s
C = 0.22 µF
s
V = 80% V
D
1E1 1E2 1E3 1E4
1E1
1E4
Pulse Basewidth (µs)
Fig. 13 - Frequency Characteristics
8
DRM
1000
1500
2500
3000
Pu ls e Basewid th (µs)
500
400
200
tp
100
ST203S Series
Trapezoidal pulse
T = 85°C
C
di/dt = 100A/µs
50 H z
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ST203S Series
Bulletin I25177 rev. C 12/96
1E5
1E4
1
1E3
1E2
Peak On-state Current (A)
1E1
1E1 1E2 1E3 1E 4
tp
ST203S Series
Si n u so i d a l pul s e
0.4
0.2
0.1
7.5
4
2
20 joules pe r pulse
Pulse Basewidth (µs)
Fig. 14 - Maximum On-state Energy Power Loss Characteristics
100
Rectangular gate pulse
a) Recommended load line for
rated di/dt : 20V, 10ohms; tr<=1 µs
b) Recommended load line for
<=30% rated di/dt : 10V, 10ohms
10
tr<=1 µs
1
Instantaneous Gate Voltage (V)
0.1
0.001 0.01 0.1 1 10 100
VGD
IGD
Device: ST203S Series
Instantaneous Gate Current (A)
ST203S Series
Rectangular pulse
tp
di/dt = 50A/µs
20 joules per pulse
10
5
2
1
0.5
0.3
0.2
0.1
1E4
1E1 1E2 1E3 1E4
1E1
Pulse Basewidth (µs)
(1) PGM = 10W, tp = 20ms
(2) PGM = 20W, tp = 10ms
(3) PGM = 40W, tp = 5ms
(4) PGM = 60W, tp = 3.3ms
(a)
(b)
Tj=-40 °C
Tj=25 °C
Tj=125 °C
(2)
(3)
(1)
(4)
Fr eq uen cy L imited by P G(AV)
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Fig. 15 - Gate Characteristics
9
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