Vishay ST203S SERIES Data Sheet

Vishay ST203S SERIES Data Sheet

Bulletin I25177 rev. C 12/96

ST203S SERIES

INVERTER GRADE THYRISTORS

Stud Version

Features

205A

 

All diffused design

Center amplifying gate

Guaranteed high dv/dt

Guaranteed high di/dt

High surge current capability

Low thermal impedance

High speed performance

TypicalApplications

Inverters

Choppers

Induction heating

All types of force-commutated converters

Major Ratings and Characteristics

Parameters

ST203S

Units

 

 

 

 

IT(AV)

 

205

A

 

@ TC

85

°C

 

 

 

 

IT(RMS)

 

320

A

ITSM

@ 50Hz

5260

A

 

@ 60Hz

5510

A

 

 

 

 

I2t

@ 50Hz

138

KA2s

 

 

 

 

 

@ 60Hz

126

KA2s

 

 

 

 

VDRM/VRRM

 

1000 to 1200

V

tq range

 

20 to 30

µs

TJ

 

- 40 to 125

°C

 

 

 

 

case style TO-209AB (TO-93)

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ST203S Series

Bulletin I25177 rev. C 12/96

ELECTRICAL SPECIFICATIONS

Voltage Ratings

 

Voltage

VDRM/VRRM, maximum

VRSM , maximum

IDRM/IRRM max.

Type number

Code

repetitive peak voltage

non-repetitive peak voltage

@ TJ = TJ max.

 

 

V

V

mA

 

 

 

 

 

ST203S

10

1000

1100

40

 

 

 

12

1200

1300

 

 

 

 

 

 

 

Current Carrying Capability

 

 

 

 

Frequency

ITM

ITM

ITM

Units

180oel

 

180oel

100ms

 

 

50Hz

580

 

400

900

 

640

6180

 

4680

 

 

 

 

400Hz

570

 

380

940

 

650

2980

 

2150

 

 

 

 

1000Hz

520

 

320

930

 

630

1730

 

1200

 

A

 

 

2500Hz

370

 

210

780

 

510

890

 

580

 

 

 

 

Recovery voltage Vr

50

 

50

50

 

50

50

 

50

 

V

 

 

 

 

 

 

 

 

 

 

 

 

 

 

 

Voltage before turn-on Vd

 

VDRM

 

VDRM

 

VDRM

 

 

 

 

 

 

 

 

 

Rise of on-state current di/dt

50

 

50

-

 

-

-

 

-

 

A/ms

 

 

 

 

 

 

 

 

 

 

 

 

 

 

 

 

Case temperature

60

 

85

60

 

85

60

 

85

 

°C

 

 

Equivalent values for RC circuit

47W / 0.22µF

47W / 0.22µF

47W / 0.22µF

 

 

 

On-state Conduction

 

Parameter

ST203S

Units

Conditions

 

 

 

 

 

 

 

 

 

IT(AV)

Max. average on-state current

205

A

180° conduction, half sine wave

 

@ Case temperature

85

°C

 

 

 

 

 

 

 

 

 

IT(RMS)

Max. RMS on-state current

320

 

DC @ 76°C case temperature

ITSM

Max. peak, one half cycle,

5260

 

t = 10ms

No voltage

 

 

non-repetitive surge current

5510

A

t = 8.3ms

reapplied

 

 

 

 

 

 

 

 

 

 

4420

 

t = 10ms

100% VRRM

 

 

 

4630

 

t = 8.3ms

reapplied

Sinusoidal half wave,

 

 

 

 

 

 

 

I2t

Maximum I2t for fusing

138

 

t = 10ms

No voltage

Initial TJ = TJ max

 

 

126

KA2s

t = 8.3ms

reapplied

 

 

 

 

 

 

 

 

 

98

t = 10ms

100% VRRM

 

 

 

 

 

 

 

89

 

t = 8.3ms

reapplied

 

 

 

 

 

 

 

 

I2Öt

Maximum I2Öt for fusing

1380

KA2Ös

t = 0.1 to 10ms, no voltage reapplied

2

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ST203S Series

 

 

 

 

 

 

Bulletin I25177 rev. C 12/96

 

 

 

 

 

 

On-state Conduction

 

 

 

 

 

 

 

 

 

 

 

 

Parameter

ST203S

Units

Conditions

 

 

 

 

 

 

VTM

Max. peak on-state voltage

1.72

 

ITM= 600A, TJ = TJ max, tp = 10ms sine wave pulse

VT(TO)1

Low level value of threshold

1.17

V

(16.7% x π x IT(AV) < I < π x IT(AV)), TJ = TJ max.

 

voltage

 

 

 

 

 

 

VT(TO)2 High level value of threshold

1.20

 

(I > π x IT(AV)), TJ = TJ max.

 

voltage

 

rt1

Low level value of forward

0.92

 

(16.7% x π x IT(AV) < I < π x IT(AV)), TJ = TJ max.

 

slope resistance

mΩ

rt2

High level value of forward

0.87

(I > π x IT(AV)), TJ = TJ max.

 

 

slope resistance

 

 

 

 

 

 

IH

Maximum holding current

600

mA

TJ = 25°C, I T > 30A

IL

Typical latching current

1000

TJ = 25°C, V A= 12V, Ra = 6Ω, IG= 1A

 

Switching

 

 

 

 

 

 

 

 

 

 

 

 

Parameter

ST203S

Units

Conditions

 

 

 

 

 

 

 

di/dt

Max. non-repetitive rate of rise

1000

A/µs

TJ = TJ max, VDRM = rated VDRM

 

of turned-on current

ITM = 2 x di/dt

 

 

 

 

 

td

Typical delay time

0.79

 

TJ = 25°C, V DM = rated VDRM, ITM = 50A DC, tp= 1µs

µs

Resistive load, Gate pulse: 10V, 5Ω source

 

 

Min

 

Max

TJ = TJ max, ITM = 300A, commutating di/dt = 20A/µs

 

 

 

 

tq

Max. turn-off time

20

 

30

 

VR = 50V, tp = 500µs, dv/dt: see table in device code

Blocking

 

 

 

 

 

 

 

 

 

 

 

Parameter

ST203S

Units

Conditions

 

 

 

 

 

dv/dt

Maximum critical rate of rise of

500

V/μs

TJ = TJ max., linear to 80% VDRM, higher value

 

off-state voltage

 

 

 

 

available on request

IRRM

Max. peak reverse and off-state

40

 

mA

TJ = TJ max, rated VDRM/VRRM applied

I

leakage current

 

DRM

 

 

 

 

 

 

Triggering

 

 

 

 

 

 

 

 

 

 

 

Parameter

ST203S

Units

Conditions

 

 

 

 

 

 

PGM

Maximum peak gate power

60

 

W

TJ = TJ max, f = 50Hz, d% = 50

PG(AV)

Maximum average gate power

10

 

 

 

 

IGM

Max. peak positive gate current

10

 

A

TJ = TJ max, tp 5ms

+VGM

Maximum peak positive

20

 

 

 

 

gate voltage

 

 

 

 

 

 

 

V

TJ = TJ max, tp 5ms

 

 

 

 

 

-VGM

Maximum peak negative

5

 

 

 

 

 

gate voltage

 

 

 

 

 

IGT

Max. DC gate current required

200

 

mA

 

 

to trigger

 

 

 

 

 

 

 

TJ = 25°C, V A = 12V, Ra = 6Ω

 

 

 

 

 

 

VGT

Max. DC gate voltage required

3

 

 

V

 

 

 

 

to trigger

 

 

 

 

 

 

 

 

 

IGD

Max. DC gate current not to trigger

20

 

mA

TJ = TJ max, rated VDRM applied

VGD

Max. DC gate voltage not to trigger

0.25

V

 

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