Vishay ST1900C..R SERIES Data Sheet
Bulletin I25197 rev. B 02/00
ST1900C..R SERIES
PHASE CONTROL THYRISTORS Hockey Puk Version
Features
Double side cooling
High surge capability
High mean current
Fatigue free
Typical Applications
DC motor controls
Controlled DC power supplies
AC controllers
Major Ratings and Characteristics
Parameters ST1900C..R Units
I
T(AV)
I
T(AV)
I
T(RMS)
I
TSM
@ T
C
@ T
hs
@ T
hs
@ 50Hz 27500 A
@ 60Hz 29000 A
1625 A
80 °C
1940 A
55 °C
3500 A
25 °C
1940A
(R-PUK)
I2t@
V
DRM/VRRM
t
q
T
J
50Hz 3780 KA2s
60Hz 3490 KA2s
@
typical 500 µs
max. 125 °C
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4500 to 5200 V
1
ST1900C..R Series
Bulletin I25197 rev. B 02/00
ELECTRICAL SPECIFICATIONS
Voltage Ratings
Voltage V
DRM/VRRM
Type number Code peak and off-state voltage repetitive peak voltage
45 4500 4600
46 4600 4700
ST1900C..R 250
48 4800 4900
50 5000 5100
52 5200 5300
On-state Conduction
Parameter ST1900C..R Units Conditions
Max. average on-state current 1625 (1030) A
I
T(AV)
@ Case temperature 80 ° C
Max. average on-state current 1940 (800) A
I
T(AV)
@ Heatsink temperature 55 (85) °C
Max. RMS on-state current 3500 A DC @ 25°C heatsink temperature double side cooled
I
T(RMS)
I
Max. peak, one-cycle No voltage
TSM
non-repetitive surge current reapplied
2
t Maximum I2t for fusing No voltage Initial TC = 125°C
I
V
Max. value of threshold voltage 1.4 V TJ = TJ max.
T(TO)
r
Max. value of on-state slope
t
resistance
Max. on-state voltage 2.1 V Ipk= 2900A, TC = 25°C
V
TM
I
Typical latching current 300 mA TJ = 25°C, VD = 5V
L
, max. repetitive V
, maximum non- I
RSM
DRM/IRRM
@ TC = 125°C
VVmA
180° conduction, half sine wave
double side (single side [anode side]) cooled
A
KA2s
mΩ
t = 10ms
t = 8.3ms
t = 10ms
t = 8.3ms
t = 10ms
t = 8.3ms
t = 10ms
t = 8.3ms
50% V
RRM
reapplied Sinusoidal half wave,
reapplied
50% V
RRM
reapplied
27500
29000
22000
23500
3780
3490
2420
2290
0.31 TJ = TJ max.
max.
Switching
Parameter ST1900C..R Units Conditions
di/dt Max. repetitive 50Hz (no repetitive) From 67% V
rate of rise of turned-on current to 1A, T
Maximum delay time 2.5
t
d
t
Typical turn-off time 500
q
150 (300) A/µs
µs
Gate drive 30V, 15Ω, Vd = 67% V
Rise time 0.5µs
I
= 1000A, tp = 1ms, TJ = TJ max, V
T
dI
/dt = 20A/µs, V
RR
2
to 1000A gate drive 20V, 10Ω, tr = 0.5µs
DRM
= TJ max.
J
DRM, TJ
67% V
DR =
DRM, dVDR
= 25°C
= 50V,
RM
/dt = 8V/µs linear
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