Vishay ST1280C..K Series Data Sheet

Vishay High Power Products

Phase Control Thyristors

(Hockey PUK Version), 2310 A

FEATURES

• Center amplifying gate

ST1280C..K Series

• Metal case with ceramic insulator

• International standard case A-24 (K-PUK)

• High profile hockey PUK

A-24 (K-PUK)

• Lead (Pb)-free

TYPICAL APPLICATIONS

PRODUCT SUMMARY

I

T(AV)

2310 A

• DC motor controls

• Controlled DC power supplies

• AC controllers

MAJOR RATINGS AND CHARACTERISTICS

PARAMETER TEST CONDITIONS VALUES UNITS

I

T(AV)

I

T(RMS)

I

TSM

2

I

t

V

DRM/VRRM

t

q

T

J

T

hs

T

hs

50 Hz 42 500

60 Hz 44 500

50 Hz 9027

60 Hz 8240

Typical 200 µs

2310 A

55 °C

4150 A

25 °C

A

kA2s

400 to 600 V

- 40 to 125 °C

RoHS

COMPLIANT

ELECTRICAL SPECIFICATIONS

VOLTAGE RATINGS

V

TYPE NUMBER

ST1280C..K

Document Number: 93718 For technical questions, contact: [e-mail]
Revision: 11-Aug-08 1

VOLTAGE

CODE

04 400 500

06 600 700

DRM/VRRM

, MAXIMUM REPETITIVE PEAK

AND OFF-STATE VOLTAGE

V

V

, MAXIMUM

NON-REPETITIVE PEAK VOLTAGE

RSM

V

I

DRM/IRRM

AT T

= TJ MAXIMUM

J

MAXIMUM

mA

100

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ST1280C..K Series

Vishay High Power Products

Phase Control Thyristors

(Hockey PUK Version),

2310 A

ABSOLUTE MAXIMUM RATINGS

PARAMETER SYMBOL TEST CONDITIONS VALUES UNITS

Maximum average on-state current
at heatsink temperature

Maximum RMS on-state current I

I

T(RMS)

Maximum peak, one-cycle
non-repetitive surge current

2

Maximum I

Maximum I

t for fusing I2t

2

√t for fusing I2√t t = 0.1 to 10 ms, no voltage reapplied 90 270 kA2√s

Low level value of threshold voltage V

High level value of threshold voltage V

Low level value of on-state slope resistance r

High level value of on-state slope resistance r

Maximum on-state voltage V

Maximum holding current I

Typical latching current I

T(AV)

180° conduction, half sine wave
Double side (single side) cooled

25 °C heatsink temperature double side cooled 4150

I

TSM

T(TO)1

T(TO)2

t1

t2

TM

H

L

t = 10 ms

t = 8.3 ms 44 500

t = 10 ms

t = 8.3 ms 37 400

t = 10 ms

t = 8.3 ms 8241

t = 10 ms

t = 8.3 ms 5828

(16.7 % x π x I
(I > π x I
(16.7 % x π x I
(I > π x I

Ipk = 8000 A, TJ = TJ maximum, tp = 10 ms sine pulse 1.44 V

TJ = 25 °C, anode supply 12 V resistive load

No voltage
reapplied

100 % V
reapplied

No voltage

RRM

Sinusoidal half wave,
initial T

= TJ maximum

J

reapplied

100 % V

RRM

reapplied

< I < π x I

T(AV)

), TJ = TJ maximum 0.90

T(AV)

< I < π x I

T(AV)

), TJ = TJ maximum 0.068

T(AV)

), TJ = TJ maximum 0.83

T(AV)

), TJ = TJ maximum 0.077

T(AV)

2310 (885) A

55 (85) °C

42 500

35 700

9027

6383

600

1000

A

kA2s

V

mΩ

mA

SWITCHING

PARAMETER SYMBOL TEST CONDITIONS VALUES UNITS

Maximum non-repetitive rate of
rise of turned-on current

Typical delay time t

Typical turn-off time t

dI/dt

d

q

Gate drive 20 V, 20 Ω, t
T

= TJ maximum, anode voltage ≤ 80 % V

J

≤ 1 µs

r

DRM

Gate current 1 A, dIg/dt = 1 A/µs
V

= 0.67 % V

d

, TJ = 25 °C

DRM

ITM = 550 A, TJ = TJ maximum, dI/dt = 40 A/µs,
V

= 50 V, dV/dt = 20 V/µs, gate 0 V 100 Ω, tp = 500 µs

R

1000 A/µs

1.9
µs

200

BLOCKING

PARAMETER SYMBOL TEST CONDITIONS VALUES UNITS

Maximum critical rate of rise of
off-state voltage

Maximum peak reverse and
off-state leakage current

dV/dt T

,

I

RRM

I

DRM

= TJ maximum linear to 80 % rated V

J

TJ = TJ maximum, rated V

DRM/VRRM

DRM

500 V/µs

applied 100 mA

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Document Number: 93718

2 Revision: 11-Aug-08

ST1280C..K Series

Phase Control Thyristors

Vishay High Power Products

(Hockey PUK Version),

2310 A

TRIGGERING

PARAMETER SYMBOL TEST CONDITIONS

Maximum peak gate power P

Maximum average gate power P

Maximum peak positive gate current I

Maximum peak positive gate voltage + V

Maximum peak negative gate voltage - V

GM

G(AV)

GM

TJ = TJ maximum, tp ≤ 5 ms 16

TJ = TJ maximum, f = 50 Hz, d% = 50 3

TJ = TJ maximum, tp ≤ 5 ms

GM

GM

TJ = - 40 °C

DC gate current required to trigger I

DC gate voltage required to trigger V

DC gate current not to trigger I

DC gate voltage not to trigger V

GT

GT

GD

GD

= 25 °C 100 200

J

T

= 125 °C 50 -

J

TJ = - 40 °C 1.4 -

= 25 °C 1.1 3.0

T

J

= 125 °C 0.9 -

T

J

Maximum required gate trigger/
current/voltage are the lowest
value which will trigger all units
12 V anode to cathode applied

Maximum gate current/voltage
not to trigger is the maximum

TJ = TJ maximum

value which will not trigger any
unit with rated V

anode to

DRM

cathode applied

VALUES

TYP. MAX.

3.0 A

20

5.0

200 -

10 mA

0.25 V

UNITS

W

V

mAT

V

THERMAL AND MECHANICAL SPECIFICATIONS

PARAMETER SYMBOL TEST CONDITIONS VALUES UNITS

Maximum operating temperature range T

Maximum storage temperature range T

Maximum thermal resistance, junction to heatsink R

Maximum thermal resistance, case to heatsink R

J

Stg

thJ-hs

thC-hs

DC operation single side cooled 0.042

DC operation double side cooled 0.021

DC operation single side cooled 0.006

DC operation double side cooled 0.003

Mounting force, ± 10 %

Approximate weight 425 g

Case style See dimensions - link at the end of datasheet A-24 (K-PUK)

ΔR

CONDUCTION

thJC

CONDUCTION ANGLE

SINUSOIDAL CONDUCTION RECTANGULAR CONDUCTION

SINGLE SIDE DOUBLE SIDE SINGLE SIDE DOUBLE SIDE

TEST CONDITIONS UNITS

180° 0.003 0.003 0.002 0.002

120° 0.004 0.004 0.004 0.004

90° 0.005 0.005 0.005 0.005

= TJ maximum K/W

T

J

60° 0.007 0.007 0.007 0.007

30° 0.012 0.012 0.012 0.012

Note

• The table above shows the increment of thermal resistance R

when devices operate at different conduction angles than DC

thJC

- 40 to 125

- 40 to 150

24 500

(2500)

°C

K/W

N

(kg)

Document Number: 93718 For technical questions, contact: [e-mail]

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Revision: 11-Aug-08 3

ST1280C..K Series

Vishay High Power Products

130

120

110

100

90

80

70

60

50

40

0 400 800 1200 1600

Maximum Allowable Heatsink Temperature (°C)

Fig. 1 - Current Ratings Characteristics

130

120

110

100

90

80

70

60

50

40

30

20

0 500 1000 1500 2000 2500

Maximum Allowable Heatsink Temperature (°C)

Fig. 2 - Current Ratings Characteristics

ST1280C..K Series
(Single Side Cooled)
R (DC) = 0.042 K/W

thJ-hs

Conduction Angle

30˚

60˚

90˚

120˚

180˚

Average On-state current (A)

ST1280C..K Series
(Single Side Cooled)
R (DC) = 0.042 K/W

thJ-hs

Conduction Period

30˚

60˚

90˚

120˚

180˚

Average On-state current (A)

Phase Control Thyristors

(Hockey PUK Version),

2310 A

DC

130

120

110

ST1280C..K Series
(Double Side Cooled)
R (DC) = 0.021 K/W

thJ-hs

100

90

80

Conduction Period

70

60

30˚

50

40

30

20

0 1000 2000 3000 4000 5000

Maximum Allowable Heatsink Temperature (°C)

60˚

90˚

120˚

180˚

DC

Average On-state Current (A)

Fig. 4 - Current Ratings Characteristics

3600

3200

2800

2400

2000

180˚
120˚

90˚
60˚
30˚

RMS Limit

1600

1200

800

400

Conduction Angle

ST1280C..K Series
T = 125˚C

J

0

0 500 1000 1500 2000 2500 3000

Maximum Average On-state Power Loss (W)

Average On-state Current (A)

Fig. 5 - On-State Power Loss Characteristics

130

120

110

ST1280C..K Series
(Double Side Cooled)
R (DC) = 0.021 K/W

thJ-hs

100

90

80

Conduction Angle

70

60

50

40

30˚

60˚

90˚

30

0 500 1000 1500 2000 2500 3000

Maximum Allowable Heatsink Temperature (°C)

Average On-state Current (A)

Fig. 3 - Current Ratings Characteristics

120˚

180˚

5000

4500

4000

3500

3000

2500

2000

1500

1000

Maximum Average On-state Power Loss (W)

DC
180˚
120˚

90˚

60˚

30˚

ST1280C..K Series

500

0

0 1000 2000 3000 4000 5000

T = 125˚C

J

RMS Limit

Conduction Period

Average On-state Current (A)

Fig. 6 - On-State Power Loss Characteristics

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Document Number: 93718

4 Revision: 11-Aug-08

ST1280C..K Series

Phase Control Thyristors

(Hockey PUK Version),

40000

35000

30000

25000

20000

15000

Peak Half Sine Wave On-state Current (A)

At Any Rated Load Condition And With

Rated V Applied Following Surge.

RRM

ST1280C..K Series

Initial T = 125˚C

J

@ 60 Hz 0.0083 s
@ 50 Hz 0.0100 s

110100

Number Of Equal Amplitude Half Cycle Current Pulses (N)

Fig. 7 - Maximum Non-Repetitive Surge Current

Single and Double Side Cooled

100000

2310 A

Vishay High Power Products

45000

Maximum Non Repetitive Surge Current

Versus Pulse Train Duration. Control

40000

35000

30000

25000

20000

15000

Peak Half Sine Wave On-state Current (A)

Of Conduction May Not Be Maintained.

ST1280C..K Series

Initial T = 125 ˚C

No Voltage Reapplied

Rated V Reapplied

J

RRM

0.01 0.1 1

Pulse Train Duration (s)

Fig. 8 - Maximum Non-Repetitive Surge Current

Single and Double Side Cooled

0.1

thJ-hs

0.01

10000

1000

Instantaneous On-state Current (A)

100

0.5 1 1.5 2 2.5 3 3.5 4 4.5

Fig. 9 - On-State Voltage Drop Characteristics

Steady State Value

R = 0.042 K/W

thJ-hs

(Single Side Cooled)

R = 0.021 K/W

thJ-hs

(Double Side Cooled)

(DC Operation)

T = 25˚C

J

T = 125˚C

J

ST1280C..K Series

Instantaneous On-state Voltage (V)

ST1280C..K Series

0.001

Transient Thermal Impedance Z (K/W)

0.001 0.01 0.1 1 10 100

Square Wave Pulse Duration (s)

Fig. 10 - Thermal Impedance Z

Characteristics

thJ-hs

Document Number: 93718 For technical questions, contact: [e-mail]

www.vishay.com

Revision: 11-Aug-08 5

ST1280C..K Series

(b)

(a)

(1)

Vishay High Power Products

100

Rectangulargate pulse
a) Recommended load line for
rated di/dt : 20V, 10ohms; tr<=1 µs
b) Recommended load line for
<=30% rated di/dt : 10V, 10ohms
tr<=1 µs

10

1

Instantaneous Gate Voltage (V)

0.1

0.001 0.01 0.1 1 10 100

ORDERING INFORMATION TABLE

VG D

Phase Control Thyristors

(Hockey PUK Version),

2310 A

Tj=-40 °C

Tj=25 °

Tj=125 °C

C

IG D

Device: ST1280C..K Series

Instantaneous Gate Current (A)

Fig. 11 - Gate Characteristics

Frequency Limited by PG(AV)

(1) PGM = 16W, tp = 4ms
(2) PGM = 30W, tp = 2ms
(3) PGM = 60W, tp = 1ms

(2) (3)

Device code

ST 128 0 C 06 K 1 -

51324678

1 - Thyristor

2 - Essential part number

3 - 0 = Converter grade

4

- C = Ceramic PUK

5

- Voltage code x 100 = V

6

- K = PUK case A-24 (K-PUK)

7

- 0 = Eyelet terminals (gate and auxiliary cathode unsoldered leads)

(see Voltage Ratings table)

RRM

1 = Fast-on terminals (gate and auxiliary cathode unsoldered leads)

2 = Eyelet terminals (gate and auxiliary cathode soldered leads)

3 = Fast-on terminals (gate and auxiliary cathode soldered leads)

8 - Critical dV/dt:

None = 500 V/µs (standard selection)

L = 1000 V/µs (special selection)

LINKS TO RELATED DOCUMENTS

Dimensions http://www.vishay.com/doc?95081

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6 Revision: 11-Aug-08

Document Number: 93718

Legal Disclaimer Notice

Vishay

Notice

The products described herein were acquired by Vishay Intertechnology, Inc., as part of its acquisition of
International Rectifier’s Power Control Systems (PCS) business, which closed in April 2007. Specifications of the
products displayed herein are pending review by Vishay and are subject to the terms and conditions shown below.

Specifications of the products displayed herein are subject to change without notice. Vishay Intertechnology, Inc., or
anyone on its behalf, assumes no responsibility or liability for any errors or inaccuracies.

Information contained herein is intended to provide a product description only. No license, express or implied, by
estoppel or otherwise, to any intellectual property rights is granted by this document. Except as provided in Vishay's
terms and conditions of sale for such products, Vishay assumes no liability whatsoever, and disclaims any express
or implied warranty, relating to sale and/or use of Vishay products including liability or warranties relating to fitness
for a particular purpose, merchantability, or infringement of any patent, copyright, or other intellectual property right.

The products shown herein are not designed for use in medical, life-saving, or life-sustaining applications.
Customers using or selling these products for use in such applications do so at their own risk and agree to fully
indemnify Vishay for any damages resulting from such improper use or sale.

International Rectifier
are registered trademarks of International Rectifier Corporation in the U.S. and other countries. All other product
names noted herein may be trademarks of their respective owners.

®

, IR®, the IR logo, HEXFET®, HEXSense®, HEXDIP®, DOL®, INTERO®, and POWIRTRAIN

®

Document Number: 99901 www.vishay.com
Revision: 12-Mar-07 1

DIMENSIONS in millimeters (inches)

Outline Dimensions

Vishay High Power Products

A-24 (K-PUK)

Case Style A-24 (K-PUK)

Creepage distance: 28.88 (1.137) minimum
Strike distance: 17.99 (0.708) minimum

1 (0.04) MIN.

2 places

27.5 (1.08) MAX.

47.5 (1.87) DIA. MAX.
2 places

67 (2.6) DIA. MAX.

74.5 (2.9) DIA. MAX.

Pin receptable
AMP. 60598-1

4.75 (0.2) NOM.

20° ± 5°

44 (1.73)

2 holes DIA. 3.5 (0.14) x 2.1 (0.1) deep

Quote between upper and lower pole pieces has to be considered after
application of mounting force (see thermal and mechanical specification)

Document Number: 95081 For technical questions concerning discrete products, contact: [e-mail]
Revision: 02-Aug-07 For technical questions concerning module products, contact: [e-mail]

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1