Vishay ST1230C..KP Series Data Sheet

A-24 (K-PUK)

ST1230C..KP Series

Vishay High Power Products

Phase Control Thyristors

(Hockey PUK Version), 1745 A

FEATURES

• Center amplifying gate

• Metal case with ceramic insulator

• International standard case A-24 (K-PUK)

• High profile hockey PUK

• Lead (Pb)-free

• Designed and qualified for industrial level

RoHS

COMPLIANT

PRODUCT SUMMARY

I

T(AV)

1745 A

• DC motor controls

• Controlled DC power supplies

• AC controllers

MAJOR RATINGS AND CHARACTERISTICS

PARAMETER TEST CONDITIONS VALUES UNITS

TYPICAL APPLICATIONS

I

T(AV)

I

T(RMS)

I

TSM

2

I

t

V

DRM/VRRM

t

q

T

J

T

hs

T

hs

50 Hz 33 500

60 Hz 35 100

50 Hz 5615

60 Hz 5126

Typical 200 µs

1745 A

55 °C

3200 A

25 °C

A

kA2s

800 to 1600 V

- 40 to 125 °C

ELECTRICAL SPECIFICATIONS

VOLTAGE RATINGS

V

TYPE NUMBER

ST1230C..K

Document Number: 94395 For technical questions, contact: [e-mail]
Revision: 11-Aug-08 1

VOLTAGE

CODE

08 800 900

12 1200 1300

14 1400 1500

16 1600 1700

DRM/VRRM

, MAXIMUM REPETITIVE PEAK

AND OFF-STATE VOLTAGE

V

NON-REPETITIVE PEAK VOLTAGE

V

RSM

, MAXIMUM

V

I

DRM/IRRM

AT T

= TJ MAXIMUM

J

www.vishay.com

MAXIMUM

mA

100

ST1230C..KP Series

Vishay High Power Products

Phase Control Thyristors

(Hockey PUK Version), 1745 A

ABSOLUTE MAXIMUM RATINGS

PARAMETER SYMBOL TEST CONDITIONS VALUES UNITS

Maximum average on-state current
at heatsink temperature

Maximum RMS on-state current I

I

T(RMS)

Maximum peak, one-cycle
non-repetitive surge current

Maximum I

Maximum I

2

t for fusing I2t

2

√t for fusing I2√t t = 0.1 to 10 ms, no voltage reapplied 56 150 kA2√s

Low level value of threshold voltage V

High level value of threshold voltage V

Low level value of on-state slope resistance r

High level value of on-state slope resistance r

Maximum on-state voltage V

Maximum holding current I

Typical latching current I

T(AV)

180° conduction, half sine wave
double side (single side) cooled

DC at 25 °C heatsink temperature double side cooled 3200

I

TSM

T(TO)1

T(TO)2

t1

t2

TM

H

L

t = 10 ms

t = 8.3 ms 35 100

t = 10 ms

t = 8.3 ms 29 500

t = 10 ms

t = 8.3 ms 5126

t = 10 ms

t = 8.3 ms 3625

(16.7 % x π x I
(I > π x I
(16.7 % x π x I
(I > π x I

Ipk = 4000 A, TJ = TJ maximum, tp = 10 ms sine pulse 1.62 V

TJ = 25 °C, anode supply 12 V resistive load

No voltage
reapplied

100 % V
reapplied

No voltage

RRM

Sinusoidal half wave,
initial T

= TJ maximum

J

reapplied

100 % V

RRM

reapplied

< I < π x I

T(AV)

), TJ = TJ maximum 1.02

T(AV)

< I < π x I

T(AV)

), TJ = TJ maximum 0.16

T(AV)

), TJ = TJ maximum 0.93

T(AV)

), TJ = TJ maximum 0.17

T(AV)

1745 (700) A

55 (85) °C

33 500

28 200

5615

3971

600

1000

A

kA2s

V

mΩ

mA

SWITCHING

PARAMETER SYMBOL TEST CONDITIONS VALUES UNITS

Maximum non-repetitive rate of
rise of turned-on current

Typical delay time t

Typical turn-off time t

dI/dt

d

q

Gate drive 20 V, 20 Ω, t
T

= TJ maximum, anode voltage ≤ 80 % V

J

≤ 1 µs

r

DRM

Gate current 1 A, dIg/dt = 1 A/µs
V

= 0.67 % V

d

, TJ = 25 °C

DRM

ITM = 550 A, TJ = TJ maximum, dI/dt = 40 A/µs,
V

= 50 V, dV/dt = 20 V/µs, gate 0 V 100 Ω, tp = 500 µs

R

1000 A/µs

1.9
µs

200

BLOCKING

PARAMETER SYMBOL TEST CONDITIONS VALUES UNITS

Maximum critical rate of rise of
off-state voltage

Maximum peak reverse and
off-state leakage current

dV/dt T

,

I

RRM

I

DRM

= TJ maximum linear to 80 % rated V

J

TJ = TJ maximum, rated V

DRM/VRRM

DRM

500 V/µs

applied 100 mA

www.vishay.com For technical questions, contact: [e-mail]

Document Number: 94395

2 Revision: 11-Aug-08

ST1230C..KP Series

Phase Control Thyristors

Vishay High Power Products

(Hockey PUK Version), 1745 A

TRIGGERING

PARAMETER SYMBOL TEST CONDITIONS

Maximum peak gate power P

Maximum average gate power P

Maximum peak positive gate current I

Maximum peak positive gate voltage + V

Maximum peak negative gate voltage - V

GM

G(AV)

GM

GM

GM

TJ = TJ maximum, tp ≤ 5 ms 16

TJ = TJ maximum, f = 50 Hz, d% = 50 3

TJ = TJ maximum, tp ≤ 5 ms

TJ = - 40 °C

DC gate current required to trigger I

DC gate voltage required to trigger V

DC gate current not to trigger I

DC gate voltage not to trigger V

GT

GT

GD

GD

= 25 °C 100 200

J

T

= 125 °C 50 -

J

TJ = - 40 °C 1.4 -

= 25 °C 1.1 3.0

T

J

= 125 °C 0.9 -

T

J

Maximum required gate trigger/
current/voltage are the lowest
value which will trigger all units
12 V anode to cathode applied

Maximum gate current/
voltage not to trigger is the

TJ = TJ maximum

maximum value which will not
trigger any unit with rated V

DRM

anode to cathode applied

VALUES

TYP. MAX.

200 -

0.25 V

3.0 A

20

5.0

10 mA

UNITS

W

V

mAT

V

THERMAL AND MECHANICAL SPECIFICATIONS

PARAMETER SYMBOL TEST CONDITIONS VALUES UNITS

Maximum operating junction
temperature range

Maximum storage temperature range T

Maximum thermal resistance,
junction to heatsink

Maximum thermal resistance,
case to heatsink

Mounting force, ± 10 %

Approximate weight 425 g

Case style See dimensions - link at the end of datasheet A-24 (K-PUK)

ΔR

CONDUCTION

thJC

SINUSOIDAL

CONDUCTION ANGLE

CONDUCTION

SINGLE SIDE DOUBLE SIDE SINGLE SIDE DOUBLE SIDE

180° 0.003 0.003 0.002 0.002

120° 0.004 0.004 0.004 0.004

90° 0.005 0.005 0.005 0.005

60° 0.007 0.007 0.007 0.007

30° 0.012 0.012 0.012 0.012

Note

• The table above shows the increment of thermal resistance R

Document Number: 94395 For technical questions, contact: [e-mail]
Revision: 11-Aug-08 3

R

R

T

J

Stg

thJ-hs

thC-hs

- 40 to 125

- 40 to 150

DC operation single side cooled 0.042

DC operation double side cooled 0.021

DC operation single side cooled 0.006

DC operation double side cooled 0.003

24 500

(2500)

RECTANGULAR

CONDUCTION

when devices operate at different conduction angles than DC

thJC

TEST CONDITIONS UNITS

= TJ maximum K/W

T

J

°C

K/W

N

(kg)

www.vishay.com