A-24 (K-PUK)
PRODUCT SUMMARY
I
T(AV)
ST1200C..KP Series
Vishay High Power Products
Phase Control Thyristors
(Hockey PUK Version), 1650 A
FEATURES
• Center amplifying gate
• Metal case with ceramic insulator
• International standard case A-24 (K-PUK)
• High profile hockey PUK
• Lead (Pb)-free
• Designed and qualified for industrial level
TYPICAL APPLICATIONS
• DC motor controls
1650 A
• Controlled DC power supplies
• AC controllers
RoHS
COMPLIANT
MAJOR RATINGS AND CHARACTERISTICS
PARAMETER TEST CONDITIONS VALUES UNITS
I
T(AV)
I
T(RMS)
I
TSM
2
I
t
V
DRM/VRRM
t
q
T
J
T
hs
T
hs
50 Hz 30 500
60 Hz 32 000
50 Hz 4651
60 Hz 4250
Typical 200 µs
1650 A
55 °C
3080 A
25 °C
1200 to 2000 V
- 40 to 125 °C
ELECTRICAL SPECIFICATIONS
VOLTAGE RATINGS
TYPE NUMBER
ST1200C..K
V
VOLTAGE
CODE
12 1200 1300
14 1400 1500
16 1600 1700
18 1800 1900
20 2000 2100
DRM/VRRM
, MAXIMUM REPETITIVE PEAK
AND OFF-STATE VOLTAGE
V
V
, MAXIMUM
NON-REPETITIVE PEAK VOLTAGE
RSM
V
I
DRM/IRRM
AT T
A
kA2s
MAXIMUM
= TJ MAXIMUM
J
mA
100
Document Number: 94394 For technical questions, contact: ind-modules@vishay.com
Revision: 11-Aug-08 1
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ST1200C..KP Series
Vishay High Power Products
Phase Control Thyristors
(Hockey PUK Version), 1650 A
ABSOLUTE MAXIMUM RATINGS
PARAMETER SYMBOL TEST CONDITIONS VALUES UNITS
Maximum average on-state current
at heatsink temperature
Maximum RMS on-state current I
I
T(RMS)
Maximum peak, one-cycle
non-repetitive surge current
2
Maximum I
Maximum I
t for fusing I2t
2
√t for fusing I2√t t = 0.1 to 10 ms, no voltage reapplied 46 510 kA2√s
Low level value of threshold voltage V
High level value of threshold voltage V
Low level value of on-state slope resistance r
High level value of on-state slope resistance r
Maximum on-state voltage V
Maximum holding current I
Typical latching current I
T(AV)
180° conduction, half sine wave
double side (single side) cooled
DC at 25 °C heatsink temperature double side cooled 3080
I
TSM
T(TO)1
T(TO)2
t1
t2
TM
H
L
t = 10 ms
t = 8.3 ms 32 000
t = 10 ms
t = 8.3 ms 26 900
t = 10 ms
t = 8.3 ms 4250
t = 10 ms
t = 8.3 ms 3000
(16.7 % x π x I
(I > π x I
(16.7 % x π x I
(I > π x I
Ipk = 4000 A, TJ = TJ maximum, tp = 10 ms sine pulse 1.73 V
TJ = 25 °C, anode supply 12 V resistive load
No voltage
reapplied
100 % V
reapplied
No voltage
RRM
Sinusoidal half wave,
initial T
= TJ maximum
J
reapplied
100 % V
RRM
reapplied
< I < π x I
T(AV)
), TJ = TJ maximum 1.01
T(AV)
< I < π x I
T(AV)
), TJ = TJ maximum 0.19
T(AV)
), TJ = TJ maximum 0.91
T(AV)
), TJ = TJ maximum 0.21
T(AV)
1650 (700) A
55 (85) °C
30 500
25 700
4651
3300
600
1000
A
kA2s
V
mΩ
mA
SWITCHING
PARAMETER SYMBOL TEST CONDITIONS VALUES UNITS
Maximum non-repetitive rate of
rise of turned-on current
Typical delay time t
Typical turn-off time t
dI/dt
d
q
Gate drive 20 V, 20 Ω, t
T
= TJ maximum, anode voltage ≤ 80 % V
J
≤ 1 µs
r
DRM
Gate current 1 A, dIg/dt = 1 A/µs
V
= 0.67 % V
d
, TJ = 25 °C
DRM
ITM = 550 A, TJ = TJ maximum, dI/dt = 40 A/µs,
V
= 50 V, dV/dt = 20 V/µs, gate 0 V 100 Ω, tp = 500 µs
R
1000 A/µs
1.9
µs
200
BLOCKING
PARAMETER SYMBOL TEST CONDITIONS VALUES UNITS
Maximum critical rate of rise of
off-state voltage
Maximum peak reverse and
off-state leakage current
dV/dt T
,
I
RRM
I
DRM
= TJ maximum linear to 80 % rated V
J
TJ = TJ maximum, rated V
DRM/VRRM
DRM
500 V/µs
applied 100 mA
www.vishay.com For technical questions, contact: ind-modules@vishay.com
Document Number: 94394
2 Revision: 11-Aug-08
ST1200C..KP Series
Phase Control Thyristors
Vishay High Power Products
(Hockey PUK Version), 1650 A
TRIGGERING
PARAMETER SYMBOL TEST CONDITIONS
Maximum peak gate power P
Maximum average gate power P
Maximum peak positive gate current I
Maximum peak positive gate voltage + V
Maximum peak negative gate voltage - V
GM
G(AV)
GM
TJ = TJ maximum, tp ≤ 5 ms 16
TJ = TJ maximum, f = 50 Hz, d% = 50 3
TJ = TJ maximum, tp ≤ 5 ms
GM
GM
TJ = - 40 °C
DC gate current required to trigger I
DC gate voltage required to trigger V
DC gate current not to trigger I
DC gate voltage not to trigger V
GT
GT
GD
GD
= 25 °C 100 200
J
T
= 125 °C 50 -
J
TJ = - 40 °C 1.4 -
= 25 °C 1.1 3.0
T
J
= 125 °C 0.9 -
T
J
Maximum required gate trigger/
current/voltage are the lowest
value which will trigger all units
12 V anode to cathode applied
Maximum gate current/voltage
not to trigger is the maximum
TJ = TJ maximum
value which will not trigger any
unit with rated V
anode to
DRM
cathode applied
VALUES
TYP. MAX.
3.0 A
20
5.0
200 -
10 mA
0.25 V
UNITS
W
V
mAT
V
THERMAL AND MECHANICAL SPECIFICATIONS
PARAMETER SYMBOL TEST CONDITIONS VALUES UNITS
Maximum operating junction
temperature range
Maximum storage temperature range T
Maximum thermal resistance,
junction to heatsink
Maximum thermal resistance,
case to heatsink
R
R
T
J
Stg
thJ-hs
thC-hs
DC operation single side cooled 0.0.42
DC operation double side cooled 0.021
DC operation single side cooled 0.006
DC operation double side cooled 0.003
Mounting force, ± 10 %
Approximate weight 425 g
Case style See dimensions - link at the end of datasheet A-24 (K-PUK)
ΔR
CONDUCTION ANGLE
CONDUCTION
thJC
SINUSOIDAL CONDUCTION RECTANGULAR CONDUCTION
SINGLE SIDE DOUBLE SIDE SINGLE SIDE DOUBLE SIDE
180° 0.003 0.003 0.002 0.002
120° 0.004 0.004 0.004 0.004
90° 0.005 0.005 0.005 0.005
60° 0.007 0.007 0.007 0.007
30° 0.012 0.012 0.012 0.012
Note
• The table above shows the increment of thermal resistance R
when devices operate at different conduction angles than DC
thJC
Document Number: 94394 For technical questions, contact: ind-modules@vishay.com
Revision: 11-Aug-08 3
- 40 to 125
°C
- 40 to 150
K/W
24 500
(2500)
N
(kg)
TEST CONDITIONS UNITS
= TJ maximum K/W
T
J
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