Vishay ST110SPbF Series Data Sheet

Vishay High Power Products

Phase Control Thyristors

(Stud Version), 110 A

FEATURES

• Center gate

ST110SPbF Series

• International standard case TO-209AC (TO-94)

• Compression bonded encapsulation for heavy
duty operations such as severe thermal cycling

• Hermetic glass-metal case with ceramic insulator

TO-209AC (TO-94)

(Glass-metal seal over 1200 V)

• Lead (Pb)-free

• Designed and qualified for industrial level

PRODUCT SUMMARY

I

T(AV)

110 A

TYPICAL APPLICATIONS

• DC motor controls

• Controlled DC power supplies

• AC controllers

MAJOR RATINGS AND CHARACTERISTICS

PARAMETER TEST CONDITIONS VALUES UNITS

I

T(AV)

I

T(RMS)

I

TSM

2

t

I

V

DRM/VRRM

t

q

T

J

T

C

50 Hz 2700

60 Hz 2830

50 Hz 36.4

60 Hz 33.2

Typical 100 µs

110 A

90 °C

175

A

kA2s

400 to 1600 V

- 40 to 125 °C

RoHS

COMPLIANT

ELECTRICAL SPECIFICATIONS

VOLTAGE RATINGS

V

TYPE NUMBER

ST110S

Document Number: 94393 For technical questions, contact: [e-mail]
Revision: 11-Aug-08 1

VOLTAGE

CODE

04 400 500

08 800 900

12 1200 1300

16 1600 1700

DRM/VRRM

, MAXIMUM REPETITIVE PEAK

AND OFF-STATE VOLTAGE

V

V

, MAXIMUM

NON-REPETITIVE PEAK VOLTAGE

RSM

V

I

DRM/IRRM

= TJ MAXIMUM

AT T

J

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MAXIMUM

mA

20

ST110SPbF Series

Vishay High Power Products

Phase Control Thyristors

(Stud Version), 110 A

ABSOLUTE MAXIMUM RATINGS

PARAMETER SYMBOL TEST CONDITIONS VALUES UNITS

Maximum average on-state current
at case temperature

Maximum RMS on-state current I

I

T(RMS)

Maximum peak, one-cycle
non-repetitive surge current

2

Maximum I

Maximum I

t for fusing I2t

2

√t for fusing I2√t t = 0.1 to 10 ms, no voltage reapplied 364 kA2√s

Low level value of threshold voltage V

High level value of threshold voltage V

Low level value of on-state slope resistance r

High level value of on-state slope resistance r

Maximum on-state voltage V

Maximum holding current I

Typical latching current I

T(AV)

180° conduction, half sine wave

DC at 85 °C case temperature 175

I

TSM

T(TO)1

T(TO)2

t1

t2

TM

H

L

t = 10 ms

t = 8.3 ms 2830

t = 10 ms

t = 8.3 ms 2380

t = 10 ms

t = 8.3 ms 33.2

t = 10 ms

t = 8.3 ms 23.5

(16.7 % x π x I
(I > π x I
(16.7 % x π x I
(I > π x I

Ipk = 350 A, TJ = TJ maximum, tp = 10 ms sine pulse 1.52 V

TJ = 25 °C, anode supply 12 V resistive load

No voltage
reapplied

100 % V
reapplied

No voltage

RRM

Sinusoidal half wave,
initial T

= TJ maximum

J

reapplied

100 % V

RRM

reapplied

< I < π x I

T(AV)

), TJ = TJ maximum 0.92

T(AV)

< I < π x I

T(AV)

), TJ = TJ maximum 1.81

T(AV)

), TJ = TJ maximum 0.90

T(AV)

), TJ = TJ maximum 1.79

T(AV)

110 A

90 °C

2700

2270

36.4

25.8

600

1000

A

kA2s

V

mΩ

mA

SWITCHING

PARAMETER SYMBOL TEST CONDITIONS VALUES UNITS

Maximum non-repetitive rate of
rise of turned-on current

Typical delay time t

Typical turn-off time t

dI/dt

d

q

Gate drive 20 V, 20 Ω, t
T

= TJ maximum, anode voltage ≤ 80 % V

J

≤ 1 µs

r

DRM

Gate current 1 A, dIg/dt = 1 A/µs
V

= 0.67 % V

d

, TJ = 25 °C

DRM

ITM = 100 A, TJ = TJ maximum, dI/dt = 10 A/µs,
V

= 50 V, dV/dt = 20 V/µs, gate 0 V 100 Ω, tp = 500 µs

R

500 A/µs

2.0
µs

100

BLOCKING

PARAMETER SYMBOL TEST CONDITIONS VALUES UNITS

Maximum critical rate of rise of
off-state voltage

Maximum peak reverse and
off-state leakage current

dV/dt T

,

I

RRM

I

DRM

= TJ maximum linear to 80 % rated V

J

TJ = TJ maximum, rated V

DRM/VRRM

DRM

500 V/µs

applied 20 mA

www.vishay.com For technical questions, contact: [e-mail]

Document Number: 94393

2 Revision: 11-Aug-08

ST110SPbF Series

Phase Control Thyristors

Vishay High Power Products

(Stud Version), 110 A

TRIGGERING

PARAMETER SYMBOL TEST CONDITIONS

Maximum peak gate power P

Maximum average gate power P

Maximum peak positive gate current I

Maximum peak positive gate voltage + V

Maximum peak negative gate voltage - V

GM

G(AV)

GM

GM

GM

TJ = TJ maximum, tp ≤ 5 ms 5

TJ = TJ maximum, f = 50 Hz, d% = 50 1

TJ = TJ maximum, tp ≤ 5 ms

TJ = - 40 °C

DC gate current required to trigger I

DC gate voltage required to trigger V

DC gate current not to trigger I

DC gate voltage not to trigger V

GT

GT

GD

GD

= 25 °C 90 150

J

T

= 125 °C 40 -

J

TJ = - 40 °C 2.9 -

= 25 °C 1.8 3.0

T

J

= 125 °C 1.2 -

T

J

Maximum required gate trigger/
current/voltage are the lowest
value which will trigger all units
6 V anode to cathode applied

Maximum gate current/voltage
not to trigger is the maximum

TJ = TJ maximum

value which will not trigger any
unit with rated V

anode to

DRM

cathode applied

VALUES

TYP. MAX.

2.0 A

20

5.0

180 -

10 mA

0.25 V

UNITS

W

V

mAT

V

THERMAL AND MECHANICAL SPECIFICATIONS

PARAMETER SYMBOL TEST CONDITIONS VALUES UNITS

Maximum operating junction
temperature range

Maximum storage temperature range T

Maximum thermal resistance,
junction to case

Maximum thermal resistance,
case to heatsink

Mounting torque, ± 10 %

T

J

Stg

R

thJC

R

thCS

DC operation 0.195

Mounting surface, smooth, flat and greased 0.08

Non-lubricated threads 15.5 (137)

Lubricated threads 14 (120)

Approximate weight 130 g

Case style See dimensions - link at the end of datasheet TO-209AC (TO-94)

ΔR

CONDUCTION

thJC

CONDUCTION ANGLE SINUSOIDAL CONDUCTION RECTANGULAR CONDUCTION TEST CONDITIONS UNITS

180° 0.035 0.025

120° 0.041 0.042

90° 0.052 0.056

60° 0.076 0.079

30° 0.126 0.127

Note

• The table above shows the increment of thermal resistance R

when devices operate at different conduction angles than DC

thJC

- 40 to 125

- 40 to 150

(lbf · in)

T

= TJ maximum K/W

J

°C

K/W

Nm

Document Number: 94393 For technical questions, contact: [e-mail]

www.vishay.com

Revision: 11-Aug-08 3