Vishay ST110SPbF Series Data Sheet

Vishay High Power Products

Phase Control Thyristors

(Stud Version), 110 A

FEATURES

• Center gate

ST110SPbF Series

• International standard case TO-209AC (TO-94)

• Compression bonded encapsulation for heavy
duty operations such as severe thermal cycling

• Hermetic glass-metal case with ceramic insulator

TO-209AC (TO-94)

(Glass-metal seal over 1200 V)

• Lead (Pb)-free

• Designed and qualified for industrial level

PRODUCT SUMMARY

I

T(AV)

110 A

TYPICAL APPLICATIONS

• DC motor controls

• Controlled DC power supplies

• AC controllers

MAJOR RATINGS AND CHARACTERISTICS

PARAMETER TEST CONDITIONS VALUES UNITS

I

T(AV)

I

T(RMS)

I

TSM

2

t

I

V

DRM/VRRM

t

q

T

J

T

C

50 Hz 2700

60 Hz 2830

50 Hz 36.4

60 Hz 33.2

Typical 100 µs

110 A

90 °C

175

A

kA2s

400 to 1600 V

- 40 to 125 °C

RoHS

COMPLIANT

ELECTRICAL SPECIFICATIONS

VOLTAGE RATINGS

V

TYPE NUMBER

ST110S

Document Number: 94393 For technical questions, contact: [e-mail]
Revision: 11-Aug-08 1

VOLTAGE

CODE

04 400 500

08 800 900

12 1200 1300

16 1600 1700

DRM/VRRM

, MAXIMUM REPETITIVE PEAK

AND OFF-STATE VOLTAGE

V

V

, MAXIMUM

NON-REPETITIVE PEAK VOLTAGE

RSM

V

I

DRM/IRRM

= TJ MAXIMUM

AT T

J

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MAXIMUM

mA

20

ST110SPbF Series

Vishay High Power Products

Phase Control Thyristors

(Stud Version), 110 A

ABSOLUTE MAXIMUM RATINGS

PARAMETER SYMBOL TEST CONDITIONS VALUES UNITS

Maximum average on-state current
at case temperature

Maximum RMS on-state current I

I

T(RMS)

Maximum peak, one-cycle
non-repetitive surge current

2

Maximum I

Maximum I

t for fusing I2t

2

√t for fusing I2√t t = 0.1 to 10 ms, no voltage reapplied 364 kA2√s

Low level value of threshold voltage V

High level value of threshold voltage V

Low level value of on-state slope resistance r

High level value of on-state slope resistance r

Maximum on-state voltage V

Maximum holding current I

Typical latching current I

T(AV)

180° conduction, half sine wave

DC at 85 °C case temperature 175

I

TSM

T(TO)1

T(TO)2

t1

t2

TM

H

L

t = 10 ms

t = 8.3 ms 2830

t = 10 ms

t = 8.3 ms 2380

t = 10 ms

t = 8.3 ms 33.2

t = 10 ms

t = 8.3 ms 23.5

(16.7 % x π x I
(I > π x I
(16.7 % x π x I
(I > π x I

Ipk = 350 A, TJ = TJ maximum, tp = 10 ms sine pulse 1.52 V

TJ = 25 °C, anode supply 12 V resistive load

No voltage
reapplied

100 % V
reapplied

No voltage

RRM

Sinusoidal half wave,
initial T

= TJ maximum

J

reapplied

100 % V

RRM

reapplied

< I < π x I

T(AV)

), TJ = TJ maximum 0.92

T(AV)

< I < π x I

T(AV)

), TJ = TJ maximum 1.81

T(AV)

), TJ = TJ maximum 0.90

T(AV)

), TJ = TJ maximum 1.79

T(AV)

110 A

90 °C

2700

2270

36.4

25.8

600

1000

A

kA2s

V

mΩ

mA

SWITCHING

PARAMETER SYMBOL TEST CONDITIONS VALUES UNITS

Maximum non-repetitive rate of
rise of turned-on current

Typical delay time t

Typical turn-off time t

dI/dt

d

q

Gate drive 20 V, 20 Ω, t
T

= TJ maximum, anode voltage ≤ 80 % V

J

≤ 1 µs

r

DRM

Gate current 1 A, dIg/dt = 1 A/µs
V

= 0.67 % V

d

, TJ = 25 °C

DRM

ITM = 100 A, TJ = TJ maximum, dI/dt = 10 A/µs,
V

= 50 V, dV/dt = 20 V/µs, gate 0 V 100 Ω, tp = 500 µs

R

500 A/µs

2.0
µs

100

BLOCKING

PARAMETER SYMBOL TEST CONDITIONS VALUES UNITS

Maximum critical rate of rise of
off-state voltage

Maximum peak reverse and
off-state leakage current

dV/dt T

,

I

RRM

I

DRM

= TJ maximum linear to 80 % rated V

J

TJ = TJ maximum, rated V

DRM/VRRM

DRM

500 V/µs

applied 20 mA

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Document Number: 94393

2 Revision: 11-Aug-08

ST110SPbF Series

Phase Control Thyristors

Vishay High Power Products

(Stud Version), 110 A

TRIGGERING

PARAMETER SYMBOL TEST CONDITIONS

Maximum peak gate power P

Maximum average gate power P

Maximum peak positive gate current I

Maximum peak positive gate voltage + V

Maximum peak negative gate voltage - V

GM

G(AV)

GM

GM

GM

TJ = TJ maximum, tp ≤ 5 ms 5

TJ = TJ maximum, f = 50 Hz, d% = 50 1

TJ = TJ maximum, tp ≤ 5 ms

TJ = - 40 °C

DC gate current required to trigger I

DC gate voltage required to trigger V

DC gate current not to trigger I

DC gate voltage not to trigger V

GT

GT

GD

GD

= 25 °C 90 150

J

T

= 125 °C 40 -

J

TJ = - 40 °C 2.9 -

= 25 °C 1.8 3.0

T

J

= 125 °C 1.2 -

T

J

Maximum required gate trigger/
current/voltage are the lowest
value which will trigger all units
6 V anode to cathode applied

Maximum gate current/voltage
not to trigger is the maximum

TJ = TJ maximum

value which will not trigger any
unit with rated V

anode to

DRM

cathode applied

VALUES

TYP. MAX.

2.0 A

20

5.0

180 -

10 mA

0.25 V

UNITS

W

V

mAT

V

THERMAL AND MECHANICAL SPECIFICATIONS

PARAMETER SYMBOL TEST CONDITIONS VALUES UNITS

Maximum operating junction
temperature range

Maximum storage temperature range T

Maximum thermal resistance,
junction to case

Maximum thermal resistance,
case to heatsink

Mounting torque, ± 10 %

T

J

Stg

R

thJC

R

thCS

DC operation 0.195

Mounting surface, smooth, flat and greased 0.08

Non-lubricated threads 15.5 (137)

Lubricated threads 14 (120)

Approximate weight 130 g

Case style See dimensions - link at the end of datasheet TO-209AC (TO-94)

ΔR

CONDUCTION

thJC

CONDUCTION ANGLE SINUSOIDAL CONDUCTION RECTANGULAR CONDUCTION TEST CONDITIONS UNITS

180° 0.035 0.025

120° 0.041 0.042

90° 0.052 0.056

60° 0.076 0.079

30° 0.126 0.127

Note

• The table above shows the increment of thermal resistance R

when devices operate at different conduction angles than DC

thJC

- 40 to 125

- 40 to 150

(lbf · in)

T

= TJ maximum K/W

J

°C

K/W

Nm

Document Number: 94393 For technical questions, contact: [e-mail]

www.vishay.com

Revision: 11-Aug-08 3

ST110SPbF Series

Vishay High Power Products

130

120

110

100

90

80

Maximum Allowable Case Temperature (°C)

0 20406080100120

Fig. 1 - Current Ratings Characteristics Fig. 2 - Current Ratings Characteristics

ST110S Series
R (DC) = 0.195 K/W

thJC

Conduction Angle

30°

60°

90°

120°

Average On-state Current (A)

160

140

120

100

180°
120°

90°
60°
30°

RMS Limit

80

60

40

20

0

Maximum Average On-state Power Loss (W)

020406080100120

Average On-state Current (A)

Phase Control Thyristors

(Stud Version), 110 A

130

120

110

100

90

180°

0

.

3

0

.

4

K

/

W

0

.

5

K

/

W

0

.

6

K

/

W

0

.

8

K

/

W

1

K

/

W

1

.

2

K

/

Conduction Angle

W

ST110S Series
T = 125°C

J

25 50 75 100 125

Maximum Allowable Ambient Temperature (°C)

Fig. 3 - On-State Power Loss Characteristics

80

Maximum Allowable Case Temperature (°C)

R

0

.

2

K

K

/

/

W

W

ST110S Series
R (DC) = 1.95 K/W

thJC

Conduction Period

30°

60°

90°

120°

180°

DC

0 20 40 60 80 100 120 140 160 180

Average On-state Current (A)

t

h

S

A

=

0

.

1

K

/

W

­D

e

l

t

a

R

220

200

180

160

140

DC
180°
120°

90°

60°

30°

120

RMS Limit

100

80

60

40

20

0

Maximum Average On-state Power Loss (W)

0 20 40 60 80 100 120 140 160 180

Conduction Period

ST110S Series
T = 125°C

J

Average On-state Current (A)

0

0

0

1

1

.

25 50 75 100 125

Maximum Allowable Ambient Temperature (°C)

R

0

t

h

.

2

S

A

K

/

=

W

0

.

3

K

/

W

0

.

4

K

/

W

.

5

K

/

W

.

6

K

/

W

.

8

K

/

W

K

/

W

2

K

/

W

0

.

1

K/

W

­D

e

l

t

a

R

Fig. 4 - On-State Power Loss Characteristics

www.vishay.com For technical questions, contact: [e-mail]

Document Number: 94393

4 Revision: 11-Aug-08

ST110SPbF Series

Phase Control Thyristors

(Stud Version), 110 A

2400

At Any Rated Load Condition And With

Rated V Applied Following Surge.

2200

2000

1800

1600

1400

1200

Peak Half Sine Wave On-state Current (A)

1000

110100

Number Of Equal Amplitude Half Cycle Current Pulses (N)

Fig. 5 - Maximum Non-Repetitive Surge Current

RRM

ST110S Series

Initial T = 125°C

J

@ 60 Hz 0.0083 s
@ 50 Hz 0.0100 s

10000

Vishay High Power Products

2800

Maximum Non Repetitive Surge Current

2600

2400

2200

2000

1800

1600

1400

1200

Peak Half Sine Wave On-state Current (A)

1000

Fig. 6 - Maximum Non-Repetitive Surge Current

Versus Pulse Train Duration. Control

Of Conduction May Not Be Maintained.

ST110S Series

0.01 0.1 1 10

Pulse Train Duration (s)

Initial T = 125°C

J

No Voltage Reapplied
Rated V Reapplied

RRM

1000

100

Instantaneous On-state Current (A)

10

0.5 1.5 2.5 3.5 4.5

Instantaneous On-state Voltage (V)

Tj = 25˚C

Tj = 125˚C

ST110S Series

Fig. 7 - On-State Voltage Drop Characteristics

1

Steady State Value

R = 0.195 K/W

thJC

Transient Thermal Impedance Z (K/W)

0.001

thJC

(DC Operation)

0.1

0.01

ST110S Series

0.001 0.01 0.1 1 10

Square Wave Pulse Duration (s)

Fig. 8 - Thermal Impedance Z

Characteristic

thJC

Document Number: 94393 For technical questions, contact: [e-mail]

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Revision: 11-Aug-08 5

ST110SPbF Series

Vishay High Power Products

100

Rectangular gate pulse
a) Recommended load line for
rated di/dt : 20V, 10ohms; tr<=1 µs
b) Recommended load line for
<=30% rated di/dt : 10V, 10ohms

10

tr<=1 µs

1

Instantaneous Gate Voltage (V)

0.1

0.001 0.01 0.1 1 10 100

ORDERING INFORMATION TABLE

Device code

ST 11 0 S 16 P 0 V PbF

VGD

Phase Control Thyristors

(Stud Version), 110 A

(1) PGM = 10W, tp = 4ms
(2) PGM = 20W, tp = 2ms
(3) PGM = 40W, tp = 1ms
(4) PGM = 60W, tp = 0.66ms

(a)

(b)

Tj=-40 °C

Tj=25 °C

Tj=125 °C

IGD

Device: ST110S Series

Instantaneous Gate Current (A)

Fig. 9 - Gate Characteristics

Frequency Limited by PG(AV)

(1) (2)

(3)

(4)

324

51

6789

1 - Thyristor

2 - Essential part marking

3 - 0 = Converter grade

4

- S = Compression bonding stud

5

- Voltage code x 100 = V

6

- P = Stud base 1/2"-20UNF- 2 A threads

7

- 0 = Eyelet terminals (gate and auxiliary cathode leads)

RRM

(see Voltage Ratings table)

1 = Fast-on terminals (gate and auxiliary cathode leads)

8 - V = Glass-metal seal (only up to 1200 V)

None = Ceramic housing (over 1200 V)

9

- Lead (Pb)-free

LINKS TO RELATED DOCUMENTS

Dimensions http://www.vishay.com/doc?95078

www.vishay.com For technical questions, contact: [e-mail]
6 Revision: 11-Aug-08

Document Number: 94393

Legal Disclaimer Notice

Vishay

Notice

The products described herein were acquired by Vishay Intertechnology, Inc., as part of its acquisition of
International Rectifier’s Power Control Systems (PCS) business, which closed in April 2007. Specifications of the
products displayed herein are pending review by Vishay and are subject to the terms and conditions shown below.

Specifications of the products displayed herein are subject to change without notice. Vishay Intertechnology, Inc., or
anyone on its behalf, assumes no responsibility or liability for any errors or inaccuracies.

Information contained herein is intended to provide a product description only. No license, express or implied, by
estoppel or otherwise, to any intellectual property rights is granted by this document. Except as provided in Vishay's
terms and conditions of sale for such products, Vishay assumes no liability whatsoever, and disclaims any express
or implied warranty, relating to sale and/or use of Vishay products including liability or warranties relating to fitness
for a particular purpose, merchantability, or infringement of any patent, copyright, or other intellectual property right.

The products shown herein are not designed for use in medical, life-saving, or life-sustaining applications.
Customers using or selling these products for use in such applications do so at their own risk and agree to fully
indemnify Vishay for any damages resulting from such improper use or sale.

International Rectifier
are registered trademarks of International Rectifier Corporation in the U.S. and other countries. All other product
names noted herein may be trademarks of their respective owners.

®

, IR®, the IR logo, HEXFET®, HEXSense®, HEXDIP®, DOL®, INTERO®, and POWIRTRAIN

®

Document Number: 99901 www.vishay.com
Revision: 12-Mar-07 1

TO-209AC (TO-94) for ST110S Series

DIMENSIONS in millimeters (inches)

Glass metal seal

16.5 (0.65) MAX.

Outline Dimensions

Vishay High Power Products

2.6 (0.10) MAX.

157 (6.18)

170 (6.69)

70 (2.75)

MIN.

29 (1.14)

MAX.

Ø 8.5 (0.33)

Red silicon rubber

Red cathode

Red shrink

12.5 (0.49) MAX.

21 (0.83)

MAX.

1/2"-20UNF-2A

29.5 (1.16) MAX.

Ø 4.3 (0.17)

C.S. 0.4 mm

(0.0006 s.i.)

White gate

White shrink

Ø 23.5 (0.93) MAX.

SW 27

2

(8.46 ± 0.39)

215 ± 10

Flexible lead

C.S. 16 mm

(0.025 s.i.)

Fast-on terminals

AMP. 280000-1

9.5 (0.37) MIN.

20 (0.79) MIN.

2

REF-250

Document Number: 95078 For technical questions concerning discrete products, contact: [e-mail]
Revision: 23-Sep-08 For technical questions concerning module products, contact: [e-mail]

www.vishay.com

1

Outline Dimensions

Vishay High Power Products

DIMENSIONS in millimeters (inches)

Ceramic housing

16.5 (0.65) MAX.

Ø 8.5 (0.33)

Red silicon rubber

157 (6.18)

170 (6.69)

70 (2.75)

MIN.

29 (1.14)

MAX.

Red cathode

Red shrink

12.5 (0.49) MAX.

TO-209AC (TO-94) for

ST110S Series

Ø 4.3 (0.17)

C.S. 0.4 mm

(0.0006 s.i.)

White gate

White shrink

Ø 22.5 (0.88) MAX.

2

215 ± 10

(8.46 ± 0.39)

Flexible lead

C.S. 16 mm

(0.025 s.i.)

2.6 (0.10) MAX.

2

N.

9.5 (0.37) MI

20 (0.79) MIN.

21 (0.83)

MAX.

SW 27

1/2"-20UNF-2A

29.5 (1.16) MAX.

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2 For technical questions concerning module products, contact: [e-mail]

Document Number: 95078

Revision: 23-Sep-08