Vishay ST1000C..K Series Data Sheet

Vishay High Power Products

Phase Control Thyristors

(Hockey PUK Version), 1473 A

FEATURES

• Center amplifying gate

ST1000C..K Series

• Metal case with ceramic insulator

• International standard case A-24 (K-PUK)

• High profile hockey PUK

A-24 (K-PUK)

• Lead (Pb)-free

TYPICAL APPLICATIONS

PRODUCT SUMMARY

I

T(AV)

1473 A

• DC motor controls

• Controlled DC power supplies

• AC controllers

MAJOR RATINGS AND CHARACTERISTICS

PARAMETER TEST CONDITIONS VALUES UNITS

I

T(AV)

I

T(RMS)

I

TSM

2

I

t

2

I

√t 20 000 kA2√s

V

DRM/VRRM

t

q

T

J

T

hs

T

hs

50 Hz 20.0

60 Hz 21.2

50 Hz 2000

60 Hz 1865

Range 1200 to 2600 V

Typical 300 µs

Range - 40 to 125 °C

1473 A

55 °C

2913 A

25 °C

A

kA2s

RoHS

COMPLIANT

ELECTRICAL SPECIFICATIONS

VOLTAGE RATINGS

, MAXIMUM REPETITIVE PEAK

V

TYPE NUMBER

ST1000C..K

Document Number: 93714 For technical questions, contact: [e-mail]
Revision: 11-Aug-08 1

VOLTAGE

CODE

12 1200 1300

16 1600 1700

20 2000 2100

22 2200 2300

24 2400 2500

26 2600 2700

RRM

REVERSE VOLTAGE

V

V

, MAXIMUM NON-REPETITIVE

RSM

PEAK REVERSE VOLTAGE

V

I

RRM

AT T

MAXIMUM

= 125 °C

J

mA

100

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ST1000C..K Series

Vishay High Power Products

Phase Control Thyristors

(Hockey PUK Version),

1473 A

ABSOLUTE MAXIMUM RATINGS

PARAMETER SYMBOL TEST CONDITIONS VALUES UNITS

Maximum average on-state current
at heatsink temperature

Maximum RMS on-state current I

I

T(RMS)

Maximum peak, one-cycle,
non-repetitive surge current

2

Maximum I

Maximum I

t for fusing I2t

2

√t for fusing I2√t t = 0.1 to 10 ms, no voltage reapplied 20 000 kA2√s

Low level value of threshold voltage V

High level value of threshold voltage V

Low level value of on-state slope resistance r

High level value of on-state slope resistance r

Maximum on-state voltage drop V

Maximum holding current I

Typical latching current I

T(AV)

180° conduction, half sine wave
Double side (single side) cooled

DC at 25 °C heatsink temperature double side cooled 6540

I

TSM

T(TO)1

T(TO)2

t1

t2

TM

H

L

t = 10 ms

t = 8.3 ms 21.2

t = 10 ms

t = 8.3 ms 18.1

t = 10 ms

t = 8.3 ms 1865

t = 10 ms

t = 8.3 ms 1360

(16.7 % x π x I
(I > π x I
(16.7 % x π x I
(I > π x I

Ipk = 3000 A, TJ = 125 °C, tp = 10 ms sine pulse 1.80 V

TJ = 25 °C, anode supply 12 V resistive load

No voltage
reapplied

100 % V
reapplied

No voltage

RRM

Sinusoidal half wave,
initial T

= TJ maximum

J

reapplied

100 % V

RRM

reapplied

< I < π x I

T(AV)

), TJ = TJ maximum 1.024

T(AV)

< I < π x I

T(AV)

), TJ = TJ maximum 0.265

T(AV)

), TJ = TJ maximum 0.950

T(AV)

), TJ = TJ maximum 0.283

T(AV)

1473 (630) A

55 (85) °C

20.0

17.0

2000

1445

600

1000

A

kA2s

V

mΩ

mA

SWITCHING

PARAMETER SYMBOL TEST CONDITIONS VALUES UNITS

Maximum non-repetitive rate of
rise of turned-on current

Typical delay time t

Typical turn-off time t

dI/dt

d

q

Gate drive 20 V, 20 Ω, t
T

= TJ maximum, anode voltage ≤ 80 % V

J

≤ 1 µs

r

DRM

Gate current 1 A, dIg/dt = 1 A/µs
V

= 0.67 % V

d

, TJ = 25 °C

DRM

ITM = 550 A, TJ = TJ maximum, dI/dt = 40 A/µs,
V

= 50 V, dV/dt = 20 V/µs, gate 0 V 100 Ω, tp = 500 µs

R

1000 A/µs

1.9
µs

300

BLOCKING

PARAMETER SYMBOL TEST CONDITIONS VALUES UNITS

Maximum critical rate of rise of
off-state voltage

Maximum peak reverse and
off-state leakage current

dV/dt T

,

I

RRM

I

DRM

= TJ maximum linear to 80 % rated V

J

TJ = TJ maximum, rated V

DRM/VRRM

DRM

500 V/µs

applied 100 mA

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Document Number: 93714

2 Revision: 11-Aug-08

ST1000C..K Series

Phase Control Thyristors

Vishay High Power Products

(Hockey PUK Version),

1473 A

TRIGGERING

PARAMETER SYMBOL TEST CONDITIONS

Maximum peak gate power P

Maximum peak average gate power P

Maximum peak positive gate current I

Maximum peak positive gate voltage + V

Maximum peak negative gate voltage - V

GM

G(AV)

GM

TJ = TJ maximum, tp ≤ 5 ms 16

TJ = TJ maximum, f = 50 Hz, d% = 50 3

TJ = TJ maximum, tp ≤ 5 ms

GM

GM

TJ = - 40 °C

DC gate current required to trigger I

DC gate voltage required to trigger V

DC gate current not to trigger I

DC gate voltage not to trigger V

GT

GT

GD

GD

= 25 °C 100 200

J

T

= 125 °C 50 -

J

TJ = - 40 °C 1.4 -

= 25 °C 1.1 3.0

T

J

= 125 °C 0.9 -

T

J

Maximum required gate trigger/
current/voltage are the lowest
value which will trigger all units
12 V anode to cathode applied

Maximum gate current/voltage
not to trigger is the maximum

TJ = TJ maximum

value which will not trigger any
unit with rated V

DRM

anode to

cathode applied

VALUES

TYP. MAX.

3.0 A

20

5.0

200 -

10 mA

0.25 V

UNITS

W

V

mAT

V

THERMAL AND MECHANICAL SPECIFICATIONS

PARAMETER SYMBOL TEST CONDITIONS VALUES UNITS

Maximum operating temperature range T

Maximum storage temperature range T

Maximum thermal resistance, junction to heatsink R

Maximum thermal resistance, case to heatsink R

J

Stg

thJ-hs

thC-hs

DC operation single side cooled 0.042

DC operation double side cooled 0.021

DC operation single side cooled 0.006

DC operation double side cooled 0.003

Mounting force, ± 10 %

Approximate weight 425 g

Case style See dimensions - link at the end of datasheet A-24 (K-PUK)

ΔR

CONDUCTION

thJC

CONDUCTION ANGLE

SINUSOIDAL CONDUCTION RECTANGULAR CONDUCTION

SINGLE SIDE DOUBLE SIDE SINGLE SIDE DOUBLE SIDE

TEST CONDITIONS UNITS

180° 0.003 0.003 0.002 0.002

120° 0.004 0.004 0.004 0.004

90° 0.005 0.005 0.005 0.005

= TJ maximum K/W

T

J

60° 0.007 0.007 0.007 0.007

30° 0.012 0.012 0.012 0.012

Note

• The table above shows the increment of thermal resistance R

when devices operate at different conduction angles than DC

thJC

- 40 to 125

- 40 to 150

24 500

(2500)

°C

K/W

N

(kg)

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Revision: 11-Aug-08 3

ST1000C..K Series

)

Vishay High Power Products

130

120

110

100

90

80

70

0 100 200 300 400 500 600 700

Maximum Allowable Heatsink Temperature (°C)

Fig. 1 - Current Ratings Characteristics

C)

130

120

110

100

ST1000C..K Series
(Single Side Cooled
R (DC) = 0.042 K/W

thJ-hs

Conduction Angle

30°

60°

90°

120°

Average On-state Current (A)

ST1000C..K Series
(Single Side Cooled)
R (DC) = 0.042 K/W

thJ-hs

Conduction Period

Phase Control Thyristors

(Hockey PUK Version),

1473 A

180°

130

120

110

ST1000C..K Series
(Double Side Cooled)
R (DC) = 0.021 K/W

thJ-hs

100

90˚

120˚

Conduction Period

90

80

70

60

30˚

60˚

50

40

0 400 800 1200 1600 2000 2400

Maximum Allowable Heatsink Temperature (°C)

Average On-state Current (A)

Fig. 4 - Current Ratings Characteristics

3000

180˚

2500

2000

120˚

90˚
60˚
30˚

1500

180˚

DC

RMS Limit

90

80

30°

60°

90°

120°

180°

70

0 200 400 600 800 1000

Maximum Allowable Heatsink Temperature (°

Average On-state Current (A)

Fig. 2 - Current Ratings Characteristics

130

120

110

ST1000C..K Series
(Double Side Cooled)
R (DC) = 0.021 K/W

thJ-hs

100

90

80

70

30˚

60˚

Conduction Angle

90˚

60

50

40

0 400 800 1200 1600

Maximum Allowable Heatsink Temperature (°C)

Average On-state Current (A)

Fig. 3 - Current Ratings Characteristics

120˚

DC

180˚

1000

500

Conduction Angle

ST1000C..K Series
T = 125˚C

J

0

0 400 800 1200 1600

Maximum Average On-state Power Loss (W)

Average On-state Current (A)

Fig. 5 - On-State Power Loss Characteristics

4000

3500

3000

2500

2000

1500

DC
180˚
120˚

90˚

60˚

30˚

RMS Limit

Conduction Period

1000

500

ST1000C..K Series
T = 125˚C

J

0

0 500 1000 1500 2000 2500

Maximum Average On-state Power Loss (W)

Average On-state Current (A)

Fig. 6 - On-State Power Loss Characteristics

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Document Number: 93714

4 Revision: 11-Aug-08

ST1000C..K Series

Phase Control Thyristors

(Hockey PUK Version),

18000

16000

14000

12000

10000

Peak Half Sine Wave On-state Current (A)

At Any Rated Load Condition And With

Rated V Applied Following Surge.

RRM

Initial T = 125˚C

J

@ 60 Hz 0.0083 s
@ 50 Hz 0.0100 s

8000

ST1000C..K Series

6000

110100

Number Of Equal Amplitude Half Cycle Current Pulses (N)

Fig. 7 - Maximum Non-Repetitive Surge Current

Single and Double Side Cooled

10000

T = 25˚C

J

1473 A

Vishay High Power Products

22000

Maximum Non Repetitive Surge Current

20000

18000

16000

14000

12000

10000

8000

6000

Peak Half Sine Wave On-state Current (A)

Fig. 8 - Maximum Non-Repetitive Surge Current

T = 125˚C

J

Versus Pulse Train Duration. Control

Of Conduction May Not Be Maintained.

ST1000C..K Series

Initial T = 125˚C

No Voltage Reapplied

Rated V Reapplied

RRM

0.01 0.1 1

Pulse Train Duration (s)

Single and Double Side Cooled

J

1000

ST1000C..K Series

Instantaneous On-state Current (A)

100

0.5 1 1.5 2 2.5 33.5 4

Instantaneous On-state Voltage (V)

Fig. 9 - On-State Voltage Drop Characteristics

0.1

(K/W)

Transient Thermal Impedance Z

Steady State Value

R = 0.42 K/W

thJ-hs

0.01

0.001

thJ-hs

(Single Side Cooled)

R = 0.21 K/W

thJ-hs

(Double Side Cooled)

(DC Operation)

ST1000C..K Series

0.001 0.01 0.1 1 10 100

Square Wave Pulse Duration (s)

Fig. 10 - Thermal Impedance Z

Characteristics

thJ-hs

Document Number: 93714 For technical questions, contact: [e-mail]

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Revision: 11-Aug-08 5

ST1000C..K Series

Vishay High Power Products

100

Rectangular gate pulse
a) Recommended load line for

rated di/dt : 20V, 10ohms; tr<=1 µs

b) Recommended load line for
<=30% rated di/dt : 10V, 10ohms
tr<=1 µs

10

1

Instantaneous Gate Voltage (V)

0.1

0.001 0.01 0.1 1 10 100

ORDERING INFORMATION TABLE

VGD

Phase Control Thyristors

(Hockey PUK Version),

1473 A

(1) PGM = 16W, tp = 4ms
(2) PGM = 30W, tp = 2ms
(3) PGM = 60W, tp = 1ms

(a)

(b)

Tj=-40

Tj=25

Tj=125 ˚C

IGD

Device: ST100C..K Series

Instantaneous Gate Current (A)

Fig. 11 - Gate Characteristics

˚C

˚
C

Frequency Limited by PG(AV)

(1)

(2) (3)

Device code

ST 100 0 C 26 K 1 -

51324678

1 - Thyristor

2 - Essential part number

3 - 0 = Converter grade

4

- C = Ceramic PUK

5

- Voltage code x 100 = V

6

- K = PUK case A-24 (K-PUK)

7

- 0 = Eyelet terminals (gate and auxiliary cathode unsoldered leads)

(see Voltage Ratings table)

RRM

1 = Fast-on terminals (gate and auxiliary cathode unsoldered leads)

2 = Eyelet terminals (gate and auxiliary cathode soldered leads)

3 = Fast-on terminals (gate and auxiliary cathode soldered leads)

8 - Critical dV/dt:

None = 500 V/µs (standard selection)

L = 1000 V/µs (special selection)

LINKS TO RELATED DOCUMENTS

Dimensions http://www.vishay.com/doc?95081

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6 Revision: 11-Aug-08

Document Number: 93714

Legal Disclaimer Notice

Vishay

Notice

The products described herein were acquired by Vishay Intertechnology, Inc., as part of its acquisition of
International Rectifier’s Power Control Systems (PCS) business, which closed in April 2007. Specifications of the
products displayed herein are pending review by Vishay and are subject to the terms and conditions shown below.

Specifications of the products displayed herein are subject to change without notice. Vishay Intertechnology, Inc., or
anyone on its behalf, assumes no responsibility or liability for any errors or inaccuracies.

Information contained herein is intended to provide a product description only. No license, express or implied, by
estoppel or otherwise, to any intellectual property rights is granted by this document. Except as provided in Vishay's
terms and conditions of sale for such products, Vishay assumes no liability whatsoever, and disclaims any express
or implied warranty, relating to sale and/or use of Vishay products including liability or warranties relating to fitness
for a particular purpose, merchantability, or infringement of any patent, copyright, or other intellectual property right.

The products shown herein are not designed for use in medical, life-saving, or life-sustaining applications.
Customers using or selling these products for use in such applications do so at their own risk and agree to fully
indemnify Vishay for any damages resulting from such improper use or sale.

International Rectifier
are registered trademarks of International Rectifier Corporation in the U.S. and other countries. All other product
names noted herein may be trademarks of their respective owners.

®

, IR®, the IR logo, HEXFET®, HEXSense®, HEXDIP®, DOL®, INTERO®, and POWIRTRAIN

®

Document Number: 99901 www.vishay.com
Revision: 12-Mar-07 1

DIMENSIONS in millimeters (inches)

Outline Dimensions

Vishay High Power Products

A-24 (K-PUK)

Case Style A-24 (K-PUK)

Creepage distance: 28.88 (1.137) minimum
Strike distance: 17.99 (0.708) minimum

1 (0.04) MIN.

2 places

27.5 (1.08) MAX.

47.5 (1.87) DIA. MAX.
2 places

67 (2.6) DIA. MAX.

74.5 (2.9) DIA. MAX.

Pin receptable
AMP. 60598-1

4.75 (0.2) NOM.

20° ± 5°

44 (1.73)

2 holes DIA. 3.5 (0.14) x 2.1 (0.1) deep

Quote between upper and lower pole pieces has to be considered after
application of mounting force (see thermal and mechanical specification)

Document Number: 95081 For technical questions concerning discrete products, contact: [e-mail]
Revision: 02-Aug-07 For technical questions concerning module products, contact: [e-mail]

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1