2N/SST5484 Series
Vishay Siliconix
N-Channel JFETs
2N5484 SST5484
2N5485 SST5485
2N5486 SST5486
PRODUCT SUMMARY
Part Number V
2N/SST5484 −0.3 to −3 −25 3 1
2N/SST5485 −0.5 to −4 −25 3.5 4
2N/SST5486 −2 to −6 −25 4 8
FEATURES BENEFITS APPLICATIONS
D Excellent High-Frequency Gain:
Gps 13 dB (typ) @ 400 MHz − 5485/6
D Very Low Noise: 2.5 dB (typ) @
400 MHz − 5485/6
D Very Low Distortion
D High AC/DC Switch Off-Isolation
GS(off)
(V) V
(BR)GSS
Min (V) gfs Min (mS) I
Min (mA)
DSS
D Wideband High Gain
D Very High System Sensitivity
D High Quality of Amplification
D High-Speed Switching Capability
D High Low-Level Signal Amplification
D High-Frequency Amplifier/Mixer
D Oscillator
D Sample-and-Hold
D Very Low Capacitance Switches
DESCRIPTION
The 2N/SST5484 series consists of n-channel JFETs
designed to provide high-performance amplification,
especially at high frequencies up to and beyond 400 MHz.
TO-226AA
(TO-92)
D
S
G
For applications information see AN102 and AN105.
1
2
3
Top View
2N5484
2N5485
2N5486
The 2N series, TO-226AA (TO-92), and SST series, TO-236
(SOT-23), packages provide low-cost options and are
available with tape-and-reel to support automated assembly
(see Packaging Information).
TO-236
(SOT-23
)
D
1
G
3
S
2
Top View
SST5484 (H4)*
SST5485 (H5)*
SST5486 (H6)*
*Marking Code for TO-236
Document Number: 70246
S-50148—Rev. G, 24-Jan-05
www.vishay.com
1
2N/SST5484 Series
V
VDS = 15 V, VGS = 0 V
Common-Source
Common-Source
VDS = 15 V
Common-Source
VDS = 15 V
g
ID = 4 mA
Vishay Siliconix
ABSOLUTE MAXIMUM RATINGS
Gate-Drain, Gate-Source Voltage −25 V. . . . . . . . . . . . . . . . . . . . . . . . . . . . . . .
Gate Current 10 mA. . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . .
Lead Temperature 300_C. . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . .
Storage Temperature −65 to 150_C. . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . .
Operating Junction Temperature −55 to 150_C. . . . . . . . . . . . . . . . . . . . . . . . . .
Power Dissipation
Notes
a. Derate 2.8 mW/_C above 25_C
a
SPECIFICATIONS FOR 2N SERIES (TA = 25_C UNLESS OTHERWISE NOTED)
Limits
2N5484 2N5485 2N5486
Parameter Symbol Test Conditions TypaMin Max Min Max Min Max Unit
Static
Gate-Source
Breakdown Voltage
Gate-Source Cutoff Voltage V
Saturation Drain Current
b
Gate Reverse Current I
Gate Operating Current
Gate-Source
Forward Voltage
c
c
Dynamic
Common-Source
Forward Transconductance
Common-Source
Output Conductance
Common-Source
Input Capacitance
Common-Source
Reverse Transfer Capacitance
Common-Source
Output Capacitance
Equivalent Input
Noise Voltage
c
NO TAG
NO TAG
High-Frequency
Common-Source
Transconductance
Common-Source
Output Conductance
Common-Source
Input Conductance
Common-Source Power Gain
Noise Figure
d
d
d
d
d
V
(BR)GSS
GS(off)
I
DSS
GSS
I
V
GS(F)
g
g
C
C
C
e
Y
fs(RE)
Y
os(RE)
Y
is(RE)
G
NF
G
os
iss
rss
oss
IG = −1 A , VDS = 0 V
−35 −25 −25 −25
VDS = 15 V, ID = 10 nA −0.3 −3 −0.5 −4 −2 −6
VDS = 15 V, VGS = 0 V 1 5 4 10 8 20 mA
VGS = −20 V, VDS = 0 V −0.002 −1 −1 −1
TA = 100_C
−0.2 −200 −200 −200
VDG = 10 V, ID = 1 mA −20 pA
IG = 10 mA , VDS = 0 V 0.8 V
fs
VDS = 15 V, VGS = 0 V
f = 1 kHz
3 6 3.5 7 4 8 mS
50 60 75
2.2 5 5 5
VDS = 15 V, VGS = 0 V
f = 1 MHz
0.7 1 1 1
1 2 2 2
n
VDS = 15 V, VGS = 0 V
f = 100 Hz
10
f = 100 MHz 5.5 2.5
f = 400 MHz 5.5 3 3.5
VDS = 15 V
VGS = 0 V
f = 100 MHz 45 75
f = 400 MHz 65 100 100
f = 100 MHz 0.05 0.1
f = 400 MHz 0.8 1 1
VDS = 15 V, ID = 1 mA
f = 100 MHz
ps
VDS = 15 V
ID = 4 mA
VDS = 15 V, VGS = 0 V
= 1 M , f = 1 kHz
R
G
VDS = 15 V, ID = 1 mA
= 1 k , f = 100 MHz
R
G
VDS = 15 V
RG = 1 k
f = 100 MHz 21 18 30 18 30
f = 400 MHz 13 10 20 10 20
f = 100 MHz 1 2 2
f = 400 MHz 2.5 4 4
20 16 25
0.3 2.5 2.5 2.5
2 3
350 mW. . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . .
V
nA
S
pF
nV⁄
√Hz
mS
S
mS
dB
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2
Document Number: 70246
S-50148—Rev. G, 24-Jan-05
2N/SST5484 Series
V
VDS = 15 V, VGS = 0 V
Common-Source
Common-Source
VDS = 15 V
Common-Source
Common-Source
VDS = 15 V
g
Vishay Siliconix
SPECIFICATIONS FOR SST SERIES (TA = 25_C UNLESS OTHERWISE NOTED)
Limits
SST5484 SST5485 SST5486
Parameter Symbol Test Conditions TypbMin Max Min Max Min Max Unit
Static
Gate-Source
Breakdown Voltage
Gate-Source Cutoff Voltage V
Saturation Drain Current
b
Gate Reverse Current I
Gate Operating Current
Gate-Source
Forward Voltage
c
c
Dynamic
Common-Source
Forward Transconductance
Common-Source
Output Conductance
Common-Source
Input Capacitance
Common-Source
Reverse Transfer
Capacitance
Common-Source
Output Capacitance
Equivalent Input
Noise Voltage
c
NO TAG
NO TAG
High-Frequency
Common-Source
Transconductance
Common-Source
Output Conductance
Common-Source
Input Conductance
-
Power Gain
Noise Figure NF
Notes
a. Typical values are for DESIGN AID ONLY, not guaranteed nor subject to production testing. NH
b. Pulse test: PW v300 s duty cycle v3%.
c. This parameter not registered with JEDEC.
d. Not a production test.
Stresses beyond those listed under “Absolute Maximum Ratings” may cause permanent damage to the device. These are stress ratings only , and functional operation
of the device at these or any other conditions beyond those indicated in the operational sections of the specifications is not implied. Exposure to absolute maximum
rating conditions for extended periods may affect device reliability .
V
(BR)GSS
GS(off)
I
DSS
GSS
I
V
GS(F)
g
g
C
C
C
e
Y
Y
Y
G
G
os
iss
rss
oss
os
IG = −1 A , VDS = 0 V
−35 −25 −25 −25
V
VDS = 15 V, ID = 10 nA −0.3 −3 −0.5 −4 −2 −6
VDS = 15 V, VGS = 0 V 1 5
VGS = −20 V, VDS = 0 V −0.002 −1 −1 −1
TA = 100_C
−0.2 −200 −200 −200
10 8 20 mA
4
nA
VDG = 10 V, ID = 1 mA −20 pA
IG = 10 mA , VDS = 0 V 0.8 V
fs
VDS = 15 V, VGS = 0 V
f = 1 kHz
3 6 3.5 7 4 8 mS
50 60 75
S
2.2
VDS = 15 V, VGS = 0 V
f = 1 MHz
0.7
pF
1
n
VDS = 15 V, VGS = 0 V
f = 100 Hz
10
f = 100 MHz 5.5
fs
VDS = 15 V
VGS = 0 V
f = 400 MHz 5.5
f = 100 MHz 45
f = 400 MHz 65
f = 100 MHz 0.05
is
VDS = 15 V, I
f = 100 MHz
ps
VDS = 15 V
ID = 4 mA
VDS = 15 V, VGS = 0 V
= 1 M , f = 1 kHz
R
G
VDS = 15 V, ID = 1 mA
= 1 k , f = 100 MHz
R
G
VDS = 15 V
ID = 4 mA
= 1 k
R
G
f = 400 MHz 0.8
= 1 mA
D
f = 100 MHz 21
f = 400 MHz 13
f = 100 MHz 1
f = 400 MHz 2.5
20
0.3
2
nV⁄
√Hz
mS
S
mS
dB
Document Number: 70246
S-50148—Rev. G, 24-Jan-05
www.vishay.com
3
2N/SST5484 Series
Vishay Siliconix
TYPICAL CHARACTERISTICS (TA = 25_C UNLESS OTHERWISE NOTED)
Drain Current and Transconductance
vs. Gate-Source Cutoff Voltage
20
16
12
g
fs
8
− Saturation Drain Current (mA)
4
DSS
I
0
0 −10−2 −4 −6 −8
V
− Gate-Source Cutoff Voltage (V)
GS(off)
Gate Leakage Current
100 nA
10 nA
TA = 125_C
ID = 5 mA
TA = 25_C
100 pA
− Gate LeakageI
10 pA
G
I
1 nA
1 pA
I
DSS
I
@ VDS = 10 V, VGS = 0 V
DSS
g
@ VDS = 10 V, VGS = 0 V
fs
f = 1 kHz
ID = 5 mA
1 mA
0.1 mA
1 mA
0.1 mA
I
GSS
I
GSS
125_C
@ 25_C
@
10
g
fs
− Forward Transconductance (mS)
8
6
4
2
0
On-Resistance and Output Conductance
vs. Gate-Source Cutoff Voltage
500
r
@ ID = 300 A, VGS = 0 V
DS
g
@ VDS = 10 V, VGS = 0 V
os
400
300
f = 1 kHz
r
DS
200
− Drain-Source On-Resistance ( Ω )
100
DS(on)
r
0
0 −10−2 −4 −6 −8
V
− Gate-Source Cutoff Voltage (V)
GS(off)
Common-Source Forward
Transconductance vs. Drain Current
10
V
= −3 V
GS(off)
8
6
4
2
− Forward Transconductance (mS)
fs
g
25_C
g
os
VDS = 10 V
f = 1 kHz
TA = −55_C
125_C
100
80
60
40
20
0
gos − Output Conductance (µS)
0.1 pA
012841620
10
8
6
4
− Drain Current (mA)
D
2
0
01024 68
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4
0
0.1 1 10
VDG − Drain-Gate Voltage (V) ID − Drain Current (mA)
Output Characteristics Output Characteristics
15
V
= −2 V V
GS(off)
12
VGS = 0 V
−0.2 V
9
−0.4 V
−0.6 V
−0.8 V
−1.0 V
−1.2 V
−1.4 V
V
− Drain-Source Voltage (V) VDS − Drain-Source Voltage (V)
DS
6
− Drain Current (mA)
D
I
3
0
01024 68
GS(off)
= −3 V
VGS= 0 V
−0.3 V
−0.6 V
−0.9 V
−1.2 V
−1.5 V
−1.8 V
Document Number: 70246
S-50148—Rev. G, 24-Jan-05
2N/SST5484 Series
TYPICAL CHARACTERISTICS (TA = 25_C UNLESS OTHERWISE NOTED)
Vishay Siliconix
10
V
= −2 V
GS(off)
8
TA = −55_C
6
125_C
4
− Drain Current (mA)
D
I
25_C
2
0
0 −2−0.4 −0.8 −1.2 −1.6
VGS − Gate-Source Voltage (V)
Transconductance vs. Gate-Source Voltage
10
V
= −2 V
GS(off)
8
TA = −55_C
Transfer Characteristics
6
25_C
VDS = 10 V VDS = 10 V
10
8
6
4
− Drain Current (mA)
D
I
2
0
0 −3−0.6 −1.2 −1.8 −2.4
V
= −3 V
GS(off)
TA = −55_C
125_C
VGS − Gate-Source Voltage (V)
25_C
Transconductance vs. Gate-Source Voltage
10
V
Transfer Characteristics
VDS = 10 V
f = 1 kHz
8
6
= −3 V
GS(off)
TA = −55_C
25_C
VDS = 10 V
f = 1 kHz
4
125_C
2
− Forward Transconductance (mS)
fs
g
0
0 −2−0.4 −0.8 −1.2 −1.6
VGS − Gate-Source Voltage (V)
On-Resistance vs. Drain Current Circuit Voltage Gain vs. Drain Current
300
TA = 25_C
240
V
= −2 V
GS(off)
180
−3 V
120
60
− Drain-Source On-Resistance ( Ω )
DS(on)
r
0
0.1 1 10
− Drain Current (mA) I
I
D
4
2
− Forward Transconductance (mS)
fs
g
125_C
0
0 −3−0.6 −1.2 −1.8 −2.4
VGS − Gate-Source Voltage (V)
100
g
AV+
80
60
40
− Voltage Gain
V
A
1 ) RLg
Assume VDD = 15 V, VDS = 5 V
10 V
R
+
I
L
D
V
GS(off)
20
0
− Drain Current (mA)
D
fsRL
= −2 V
−3 V
1
os
100.1
Document Number: 70246
S-50148—Rev. G, 24-Jan-05
www.vishay.com
5
2N/SST5484 Series
Vishay Siliconix
TYPICAL CHARACTERISTICS (TA = 25_C UNLESS OTHERWISE NOTED)
Common-Source Input Capacitance
5
4
3
2
− Input Capacitance (pF)
iss
C
1
0
0 −20−4 −8 −12 −16
vs. Gate-Source Voltage
f = 1 MHz
VDS = 0 V
10 V
VGS − Gate-Source Voltage (V) VGS − Gate-Source Voltage (V)
Input Admittance Forward Admittance
100
TA = 25_C
V
= 15 V
DS
V
= 0 V
GS
Common Source
10
Common-Source Reverse Feedback
Capacitance vs. Gate-Source Voltage
3
f = 1 MHz
2.4
1.8
VDS = 0 V
1.2
0.6
− Reverse Feedback Capacitance (pF)
rss
C
0
0 −20−4 −8 −12 −16
100
TA = 25_C
V
= 15 V
DS
V
= 0 V
GS
b
is
g
is
Common Source
10
g
fs
10 V
(mS)
1
0.1
100 1000
200 500 200 500
f − Frequency (MHz) f − Frequency (MHz)
Reverse Admittance Output Admittance
10
TA = 25_C
V
= 15 V
DS
V
= 0 V
GS
Common Source
1
(mS)
0.1
0.01
100 1000
200 500 200 500
−b
(mS)
−b
fs
1
0.1
100 1000
10
TA = 25_C
V
= 15 V
DS
V
= 0 V
rs
GS
Common Source
b
os
1
(mS)
−g
rs
0.1
g
os
0.01
100 1000
f − Frequency (MHz)f − Frequency (MHz)
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Document Number: 70246
S-50148—Rev. G, 24-Jan-05
2N/SST5484 Series
TYPICAL CHARACTERISTICS (TA = 25_C UNLESS OTHERWISE NOTED)
Equivalent Input Noise Voltage vs. Frequency Output Conductance vs. Drain Current
20
V
= −3 V
GS(off)
16
12
VDS = 10 V
20
V
= −3 V
GS(off)
16
TA = −55_C
12
Vishay Siliconix
VDS = 10 V
f = 1 kHz
8
en − Noise Voltage nV / Hz
4
ID = I
DSS
0
10 100 k10 k
100 1 k
ID = 5 mA
8
− Output Conductance (µS)
os
4
g
0
0.1 1 10
125_C
I
− Drain Current (mA)f − Frequency (Hz)
D
25_C
Vishay Siliconix maintains worldw ide manufacturing capability. Products may be manufactured at one of several qualified locations. Reliability data for Silicon Technology and
Package Reliability represent a composite of all qualified locations. For related documents such as package/tape drawings, part marking, and reliability data, see
http://www.vishay.com/ppg?70246.
Document Number: 70246
S-50148—Rev. G, 24-Jan-05
www.vishay.com
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