Vishay SST5484, SST5485, SST5486, 2N5484, 2N5485 Schematic [ru]
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2N/SST5484 Series
Vishay Siliconix
N-Channel JFETs
2N5484 SST5484
2N5485 SST5485
2N5486 SST5486
PRODUCT SUMMARY
Part Number V
2N/SST5484 −0.3 to −3 −25 3 1
2N/SST5485 −0.5 to −4 −25 3.5 4
2N/SST5486 −2 to −6 −25 4 8
FEATURES BENEFITS APPLICATIONS
D Excellent High-Frequency Gain:
Gps 13 dB (typ) @ 400 MHz − 5485/6
D Very Low Noise: 2.5 dB (typ) @
400 MHz − 5485/6
D Very Low Distortion
D High AC/DC Switch Off-Isolation
GS(off)
(V) V
(BR)GSS
Min (V) gfs Min (mS) I
Min (mA)
DSS
D Wideband High Gain
D Very High System Sensitivity
D High Quality of Amplification
D High-Speed Switching Capability
D High Low-Level Signal Amplification
D High-Frequency Amplifier/Mixer
D Oscillator
D Sample-and-Hold
D Very Low Capacitance Switches
DESCRIPTION
The 2N/SST5484 series consists of n-channel JFETs
designed to provide high-performance amplification,
especially at high frequencies up to and beyond 400 MHz.
TO-226AA
(TO-92)
D
S
G
For applications information see AN102 and AN105.
1
2
3
Top View
2N5484
2N5485
2N5486
The 2N series, TO-226AA (TO-92), and SST series, TO-236
(SOT-23), packages provide low-cost options and are
available with tape-and-reel to support automated assembly
(see Packaging Information).
TO-236
(SOT-23
)
D
1
G
3
S
2
Top View
SST5484 (H4)*
SST5485 (H5)*
SST5486 (H6)*
*Marking Code for TO-236
Document Number: 70246
S-50148—Rev. G, 24-Jan-05
www.vishay.com
1
2N/SST5484 Series
V
VDS = 15 V, VGS = 0 V
Common-Source
Common-Source
VDS = 15 V
Common-Source
VDS = 15 V
g
ID = 4 mA
Vishay Siliconix
ABSOLUTE MAXIMUM RATINGS
Gate-Drain, Gate-Source Voltage −25 V. . . . . . . . . . . . . . . . . . . . . . . . . . . . . . .
Gate Current 10 mA. . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . .
Lead Temperature 300_C. . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . .
Storage Temperature −65 to 150_C. . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . .
Operating Junction Temperature −55 to 150_C. . . . . . . . . . . . . . . . . . . . . . . . . .
Power Dissipation
Notes
a. Derate 2.8 mW/_C above 25_C
a
SPECIFICATIONS FOR 2N SERIES (TA = 25_C UNLESS OTHERWISE NOTED)
Limits
2N5484 2N5485 2N5486
Parameter Symbol Test Conditions TypaMin Max Min Max Min Max Unit
Static
Gate-Source
Breakdown Voltage
Gate-Source Cutoff Voltage V
Saturation Drain Current
b
Gate Reverse Current I
Gate Operating Current
Gate-Source
Forward Voltage
c
c
Dynamic
Common-Source
Forward Transconductance
Common-Source
Output Conductance
Common-Source
Input Capacitance
Common-Source
Reverse Transfer Capacitance
Common-Source
Output Capacitance
Equivalent Input
Noise Voltage
c
NO TAG
NO TAG
High-Frequency
Common-Source
Transconductance
Common-Source
Output Conductance
Common-Source
Input Conductance
Common-Source Power Gain
Noise Figure
d
d
d
d
d
V
(BR)GSS
GS(off)
I
DSS
GSS
I
V
GS(F)
g
g
C
C
C
e
Y
fs(RE)
Y
os(RE)
Y
is(RE)
G
NF
G
os
iss
rss
oss
IG = −1 A , VDS = 0 V
−35 −25 −25 −25
VDS = 15 V, ID = 10 nA −0.3 −3 −0.5 −4 −2 −6
VDS = 15 V, VGS = 0 V 1 5 4 10 8 20 mA
VGS = −20 V, VDS = 0 V −0.002 −1 −1 −1
TA = 100_C
−0.2 −200 −200 −200
VDG = 10 V, ID = 1 mA −20 pA
IG = 10 mA , VDS = 0 V 0.8 V
fs
VDS = 15 V, VGS = 0 V
f = 1 kHz
3 6 3.5 7 4 8 mS
50 60 75
2.2 5 5 5
VDS = 15 V, VGS = 0 V
f = 1 MHz
0.7 1 1 1
1 2 2 2
n
VDS = 15 V, VGS = 0 V
f = 100 Hz
10
f = 100 MHz 5.5 2.5
f = 400 MHz 5.5 3 3.5
VDS = 15 V
VGS = 0 V
f = 100 MHz 45 75
f = 400 MHz 65 100 100
f = 100 MHz 0.05 0.1
f = 400 MHz 0.8 1 1
VDS = 15 V, ID = 1 mA
f = 100 MHz
ps
VDS = 15 V
ID = 4 mA
VDS = 15 V, VGS = 0 V
= 1 M , f = 1 kHz
R
G
VDS = 15 V, ID = 1 mA
= 1 k , f = 100 MHz
R
G
VDS = 15 V
RG = 1 k
f = 100 MHz 21 18 30 18 30
f = 400 MHz 13 10 20 10 20
f = 100 MHz 1 2 2
f = 400 MHz 2.5 4 4
20 16 25
0.3 2.5 2.5 2.5
2 3
350 mW. . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . .
V
nA
S
pF
nV⁄
√Hz
mS
S
mS
dB
www.vishay.com
2
Document Number: 70246
S-50148—Rev. G, 24-Jan-05
2N/SST5484 Series
V
VDS = 15 V, VGS = 0 V
Common-Source
Common-Source
VDS = 15 V
Common-Source
Common-Source
VDS = 15 V
g
Vishay Siliconix
SPECIFICATIONS FOR SST SERIES (TA = 25_C UNLESS OTHERWISE NOTED)
Limits
SST5484 SST5485 SST5486
Parameter Symbol Test Conditions TypbMin Max Min Max Min Max Unit
Static
Gate-Source
Breakdown Voltage
Gate-Source Cutoff Voltage V
Saturation Drain Current
b
Gate Reverse Current I
Gate Operating Current
Gate-Source
Forward Voltage
c
c
Dynamic
Common-Source
Forward Transconductance
Common-Source
Output Conductance
Common-Source
Input Capacitance
Common-Source
Reverse Transfer
Capacitance
Common-Source
Output Capacitance
Equivalent Input
Noise Voltage
c
NO TAG
NO TAG
High-Frequency
Common-Source
Transconductance
Common-Source
Output Conductance
Common-Source
Input Conductance
-
Power Gain
Noise Figure NF
Notes
a. Typical values are for DESIGN AID ONLY, not guaranteed nor subject to production testing. NH
b. Pulse test: PW v300 s duty cycle v3%.
c. This parameter not registered with JEDEC.
d. Not a production test.
Stresses beyond those listed under “Absolute Maximum Ratings” may cause permanent damage to the device. These are stress ratings only , and functional operation
of the device at these or any other conditions beyond those indicated in the operational sections of the specifications is not implied. Exposure to absolute maximum
rating conditions for extended periods may affect device reliability .
V
(BR)GSS
GS(off)
I
DSS
GSS
I
V
GS(F)
g
g
C
C
C
e
Y
Y
Y
G
G
os
iss
rss
oss
os
IG = −1 A , VDS = 0 V
−35 −25 −25 −25
V
VDS = 15 V, ID = 10 nA −0.3 −3 −0.5 −4 −2 −6
VDS = 15 V, VGS = 0 V 1 5
VGS = −20 V, VDS = 0 V −0.002 −1 −1 −1
TA = 100_C
−0.2 −200 −200 −200
10 8 20 mA
4
nA
VDG = 10 V, ID = 1 mA −20 pA
IG = 10 mA , VDS = 0 V 0.8 V
fs
VDS = 15 V, VGS = 0 V
f = 1 kHz
3 6 3.5 7 4 8 mS
50 60 75
S
2.2
VDS = 15 V, VGS = 0 V
f = 1 MHz
0.7
pF
1
n
VDS = 15 V, VGS = 0 V
f = 100 Hz
10
f = 100 MHz 5.5
fs
VDS = 15 V
VGS = 0 V
f = 400 MHz 5.5
f = 100 MHz 45
f = 400 MHz 65
f = 100 MHz 0.05
is
VDS = 15 V, I
f = 100 MHz
ps
VDS = 15 V
ID = 4 mA
VDS = 15 V, VGS = 0 V
= 1 M , f = 1 kHz
R
G
VDS = 15 V, ID = 1 mA
= 1 k , f = 100 MHz
R
G
VDS = 15 V
ID = 4 mA
= 1 k
R
G
f = 400 MHz 0.8
= 1 mA
D
f = 100 MHz 21
f = 400 MHz 13
f = 100 MHz 1
f = 400 MHz 2.5
20
0.3
2
nV⁄
√Hz
mS
S
mS
dB
Document Number: 70246
S-50148—Rev. G, 24-Jan-05
www.vishay.com
3
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