SST/U401NL Series
New Product
Vishay Siliconix
Monolithic N-Channel JFET Duals
SST404NL
SST406NL
PRODUCT SUMMARY
Part Number V
U401NL -0.5 to -2.5 -40 1 -2 5
SST/U404NL -0.5 to -2.5 -40 1 -2 15
SST/U406NL -0.5 to -2.5 -40 1 -2 40
FEATURES BENEFITS APPLICATIONS
D Anti Latchup Capability
D Monolithic Design
D High Slew Rate
D Low Offset/Drift Voltage
D Low Gate Leakage: 2 pA
D Low Noise
D High CMRR: 102 dB
DESCRIPTION
GS(off)
(V) V
(BR)GSS
Min (V) gfs Min (mS) IG Typ (pA) V
D External Substrate Bias—Avoids Latchup
D Tight Differential Match vs. Current
D Improved Op Amp Speed, Settling Time Accuracy
D Minimum Input Error/Trimming Requirement
D Insignificant Signal Loss/Error Voltage
D High System Sensitivity
D Minimum Error with Large Input Signal
U401NL
U404NL
- V
GS1
D Wideband Differential Amps
D
High-Speed,Temp-Compensated,
Single-Ended Input Amps
D High-Speed Comparators
D Impedance Converters
U406NL
Max (mV)
GS2
The SST/U401NL series of high-performance monolithic dual
JFETs features extremely low noise, tight offset voltage and
low drift over temperature specifications, and is targeted for
use in a wide range of precision instrumentation applications.
This series has a wide selection of offset and drift
specifications with the U401NL featuring a 5-mV offset and
10-mV/_C drift.
Pins 4 and 8 of the SST series, and pin 4 of the U series part
Narrow Body SOIC
S
1
1
D
2
1
G
3
1
SUBSTRATE S
4
Top View
Marking Codes:
SST404NL - 404NL
SST406NL - 406NL
8
7
6
5
SUBSTRATE
G
2
D
2
2
ABSOLUTE MAXIMUM RATINGS
Gate-Drain, Gate-Source Voltage -40 V. . . . . . . . . . . . . . . . . . . . . . . . . . . . . . .
Gate Current 10 mA. . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . .
Lead Temperature (
Storage Temperature : U Prefix -65 to 200_C. . . . . . . . . . . . . . . . . . . . .
For applications information see AN106.
1
/16” from case for 10 sec.) 300_C. . . . . . . . . . . . . . . . . . .
SST Prefix -55 to 150_C. . . . . . . . . . . . . . . . . . .
numbers enable the substrate to be connected to a positive
polarity, external bias (V
) to avoid latchup.
DD
The U series, hermetically sealed TO-78 package is
available with full military processing. The SS T series SO-8
package provides ease of manufacturing, and the
symmetrical p inout prevents im proper orientation. T he SO-8
package is available with tape-and-reel options for
compatibility with automatic assembly methods.
TO-78
S
1
1
D
1
2
3
G
1
Operating Junction Temperature -55 to 150_C. . . . . . . . . . . . . . . . . . . . . . . . . .
Power Dissipation : Per Side
Notes
a. Derate 2.4 mW/_C above 25_C
b. Derate 4 mW/_C above 25_C
4
CASE, SUBSTRATE
Top View
U401NL
U404NL
U406NL
Total
G
2
7
D
2
6
5
S
2
a
b
300 mW. . . . . . . . . . . . . . . . . . . . . . . .
500 mW. . . . . . . . . . . . . . . . . . . . . . . . . . .
Document Number: 72055
S-22448—Rev. A, 17-Feb-03
www.vishay.com
7-1
SST/U401NL Series
Gate-Source
V
Gate Operating
Gate-Source Voltage
|
|
VDG = 10 V
g
DT
D
m
m
Vishay Siliconix
New Product
SPECIFICATIONS (TA = 25_C UNLESS OTHERWISE NOTED)
Limits
U401NL SST/U404NL SST/U406NL
Parameter Symbol Test Conditions TypaMin Max Min Max Min Max Unit
Static
Gate-Source
Breakdown Voltage
Gate-Source
Cutoff Voltage
Saturation
Drain Current
Gate Reverse Current I
Gate Operating
Current
Drain-Source
On-Resistance
Gate-Source Voltage V
Gate-Source
Forward Voltage
b
V
V
(BR)G1 - G2
V
r
V
(BR)GSS
GS(off)
I
DSS
GSS
I
G
DS(on)
GS
GS(F)
IG = -1 mA, VDS = 0 V
IG = "1 mA, VDS = 0 V, VGS = 0 V
VDS = 15 V, ID = 1 nA -1.5 -0.5 -2.5 -0.5 -2.5 -0.5 -2.5
VDS = 10 V, VGS = 0 V 3.5 0.5 10 0.5 10 0.5 10 mA
VGS = -30 V, VDS = 0 V -2 -25 -25 -25 pA
TA = 125_C
VDG = 15 V, ID = 200 mA
TA = 125_C
VGS = 0 V, ID = 0.1 mA 250
VDG = 15 V, ID = 200 mA
IG = 1 mA , VDS = 0 V 0.7
Dynamic
Common-Source
Forward
Transconductance
Common-Source
Output Conductance
Common-Source
Forward
Transconductance
Common-Source
Output Conductance
Common-Source
Input Capacitance
Common-Source
Reverse Transfer
Capacitance
Equivalent Input
Noise Voltage
g
fs
g
os
g
fs
g
os
C
iss
C
rss
e
n
VDS = 15 V, ID = 200 mA
f = 1 kHz
VDS = 10 V, VGS = 0 V
f = 1 kHz
VDS = 15 V, ID = 200 mA
f = 1 MHz
VDS = 15 V, ID = 200 mA
f = 10 Hz (U Only)
Matching
Differential
Gate-Source Voltage
Differential Change
with Temperature
Common Mode
Rejection Ratio
Notes
a. Typical values are for DESIGN AID ONLY, not guaranteed nor subject to production testing. NNR
b. Pulse test: PW v300 ms duty cycle v3%.
|
V
GS1–VGS2
D
V
GS1–VGS2
CMRR
|
VDG = 10 V, ID = 200 mA
=
ID = 200 mA
TA = -55 to 125_C
VDG = 10 to 20 V, ID = 200 mA
SST404NL 20
SST406NL 40
All U 10 25 80
-58 -40 -40 -40
"45 "30 "30 "30
-1 nA
-2 -15 -15 -15 pA
-0.8 -10 -10 -10 nA
-1 -2.3 -2.3 -2.3
1.5 1 2 1 2 1 2 mS
1.3 2 2 2
4 2 7 2 7 2 7 mS
5 30 30 30
4 8 8 8
1.5 3 3 3
10 20 20 20
5 15 40 mV
mV/_C
102 95 95 dB
V
W
V
mS
mS
pF
nV⁄
√Hz
www.vishay.com
7-2
Document Number: 72055
S-22448—Rev. A, 17-Feb-03
SST/U401NL Series
New Product
TYPICAL CHARACTERISTICS (TA = 25_C UNLESS OTHERWISE NOTED)
Drain Current and Transconductance
10
8
6
vs. Gate-Source Cutoff Voltage
I
@ VDS = 15 V, VGS = 0 V
DSS
@ VDG = 15 V, VGS = 0 V
g
fs
f = 1 kHz
g
fs
4
I
- Saturation Drain Current (mA)
DSS
2 1.6
I
DSS
0
0 -2.5-2.0-1.5-1.0-0.5
V
- Gate-Source Cutoff Voltage (V)
GS(off)
Output Characteristics Output Characteristics
4
V
= -1.5 V V
GS(off)
3.2
VGS= 0 V
-0.2 V
8.0
g
fs
- Forward Transconductance (mS)
6.4
4.8
3.2
0
100 nA
10 nA
1 nA
100 pA
- Gate Leakage
G
10 pA
I
1 pA
0.1 pA
050
7
6
5
TA = 125_C
I
TA = 25_C
Gate Leakage Current
IG @ ID = 500 mA
@ 125_C
GSS
10 20 30 40
VDG - Drain-Gate Voltage (V)
= -2 V
GS(off)
Vishay Siliconix
50 mA
50 mA
I
@ 25_C
GSS
VGS= 0 V
-0.2 V
2.4
-0.4 V
1.6
- Drain Current (mA)
D
I
0.8
-1.2 V
-0.6 V
-0.8 V
- Drain Current (mA)
D
I
-1.0 V
0
0168420
12 12
VDS - Drain-Source Voltage (V) VDS - Drain-Source Voltage (V)
3
VGS= 0 V
V
= -1.5 V
GS(off)
2.4
-0.2 V
1.8
-0.4 V
1.2
- Drain Current (mA)
D
I
0.6
-1.2 V
-0.6 V
-0.8 V
- Drain Current (mA)
D
I
-1.0 V
0
010.80.60.40.2
VDS - Drain-Source Voltage (V) VDS - Drain-Source Voltage (V)
4
3
-0.4 V
-0.6 V
-0.8 V
2
1
-1.0 V
-1.2 V
0
0168420
GS(off)
Output CharacteristicsOutput Characteristics
= -2 V
VGS= 0 V
-0.2 V
4
V
3.2
-0.4 V
2.4
-0.6 V
-0.8 V
1.6
-1.0 V
0.8
-1.2 V
-1.4 V
0
010.80.60.40.2
Document Number: 72055
S-22448—Rev. A, 17-Feb-03
www.vishay.com
7-3
SST/U401NL Series
Vishay Siliconix
New Product
TYPICAL CHARACTERISTICS (TA = 25_C UNLESS OTHERWISE NOTED)
Gate-Source Differential Voltage
5
V
= -1.5V
GS(off)
4
TA = -55_C
25_C
3
2
- Drain Current (mA)
D
I
125_C
1
0
0 -1.2-0.8-0.4 -1.6 -2
VGS - Gate-Source Voltage (V) ID - Drain Current (mA)
Voltage Differential with Temperature
Transfer Characteristics
100
V/ _C
m
()
10
GS2
V
-
t
D
GS1
V
D
VDG = 15 V
DT
DT
vs. Drain Current
= 25 to 125_C
A
= -55 to 25_C
A
VDS = 15 V
SST/U404NL
U401NL
100
VDG = 15 V
(mV)
10
GS2
V
-
GS1
V
1
0.01 0.1 1
130
CMRR = 20 log
120
110
CMRR (dB)
100
90
vs. Drain Current
Common Mode Rejection Ratio
vs. Drain Current
DVDG = 10 - 20 V
5 - 10 V
SST/U404NL
DV
D
V
GS1 VGS2
U401NL
DG
-
1
0.01 0.1 1
150
120
- Voltage Gain
V
A
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Circuit Voltage Gain vs. Drain Current
90
60
A
V
Assume VDD = 15 V, VDS = 5 V
30
R
L
0
I
- Drain Current (mA) ID - Drain Current (mA)
D
-2.0 V
g
fsRL
+
1 ) RLg
10 V
+
I
D
ID - Drain Current (mA)
V
GS(off)
os
0.1 10.01
7-4
= -1.5 V
80
0.01 0.1 1
500
400
300
200
- Drain-Source On-Resistance ( Ω )
100
DS(on)
r
0
0.01 0.1 1
On-Resistance vs. Drain Current
V
= -1.0 V
GS(off)
-1.5 V
-2.0 V
ID - Drain Current (mA)
Document Number: 72055
S-22448—Rev. A, 17-Feb-03
SST/U401NL Series
New Product
TYPICAL CHARACTERISTICS (TA = 25_C UNLESS OTHERWISE NOTED)
- Input Capacitance (pF)C
iss
Common-Source Input Capacitance
10
8
6
4
2
0
0 -12 -16 -20-8-4
5
4
vs. Gate-Source Voltage
f = 1 MHz
V
= 0 V
DS
5 V
15 V
VGS - Gate-Source Voltage (V) VGS - Gate-Source Voltage (V)
Output Conductance vs. Drain Current
V
= -1.5 V
GS(off)
VDS = 15 V
f = 1 kHz
10
- Reverse Feedback Capacitance (pF)C
rss
20
16
Common-Source Reverse Feedback
Capacitance vs. Gate-Source Voltage
f = 1 MHz
8
6
VDS = 0 V
4
5 V
2
15 V
0
0 -12 -16 -20-8-4
Equivalent Input Noise Voltage vs. Frequency
VDG = 15 V
Vishay Siliconix
3
TA = -55_C
2
25_C
1
- Output Conductance (µS)
os
g
0
0.01 0.1 1
ID - Drain Current (mA)
125_C
Common-Source Forward Transconductance
4.0
V
GS(off)
3.2
2.4
1.6
0.8
- Forward Transconductance (mS)
fs
g
0
0.01 0.1 1
vs. Drain Current
= -1.5 V VDS = 15 V
25_C
ID - Drain Current (mA)
f = 1 kHz
TA = -55_C
125_C
12
ID @ 200 mA
8
en - Noise Voltage nV / Hz
4
VGS = 0 V
0
10 100 1 k 100 k10 k
f - Frequency (Hz)
On-Resistance and Output Conductance
vs. Gate-Source Cutoff Voltage
500
r
DS
- Gate-Source Cutoff Voltage (V)
- Drain-Source On-Resistance ( Ω )
r
400
300
200
100
DS(on)
rDS @ ID = 100 mA
= 0 V
V
GS
@ VDG = 15 V
g
os
= 0 V
V
GS
f = 1 kHz
0
0 -1.5 -2.5-2.0-1.0-0.5
V
GS(off)
30
os
24
g
os
- Output Conductance (m
18
12
S)g
6
0
Document Number: 72055
S-22448—Rev. A, 17-Feb-03
www.vishay.com
7-5
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