SST200/200A
Vishay Siliconix
N-Channel JFETs
PRODUCT SUMMARY
V
(V) V
GS(off)
-0.3 to - 0.9 -25 0.25 0.15
FEATURES BENEFITS APPLICATIONS
D Low Cutoff Voltage: <0.9 V
D High Input Impedance
D Very Low Noise
D High Gain: A
V
Min (V) gfS Min (mS) I
(BR)GSS
= 80 @ 20 mA
Min (mA)
DSS
D High Quality Low-Level Signal
Amplification
D Low Signal Loss/System Error
D High System Sensitivity
D Mini-Microphones
D Hearing Aids
D High-Gain, Low-Noise Amplifiers
D Low-Current, Low-Voltage
Battery-Powered Amplifiers
D Ultra High Input Impedance
Pre-Amplifiers
DESCRIPTION
The SST200/200A features low leakage, very low noise and
low cutoff voltage for use with low-level power supplies. The
SST200/200A is excellent for battery powered equipment and
low current amplifiers such as mini-microphones.
TO-236
(SOT-23)
D
1
G
3
S
2
Top View
SST200 (S2)*
*Marking Code for TO-236
The TO-236 (SOT-23) and SOT-323 (SC-70 3-leads)
packages, provide surface-mount capability and is available in
tape-and-reel for automated assembly.
For applications information see AN102 and AN106.
SOT-323
(SC-70 3-LEADS)
1
D
3
SG2
Top View
SST200A (C)*
*Marking Code for SOT-323
Document Number: 70976
S-31623—Rev. E, 01-Sep-03
www.vishay.com
1
SST200/200A
Vishay Siliconix
ABSOLUTE MAXIMUM RATINGS
Gate-Drain, Gate-Source Voltage -25 V. . . . . . . . . . . . . . . . . . . . . . . . . . . . . . .
Gate Current 10 mA. . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . .
Lead Temperature (1/16” from case for 10 sec.) 300_C. . . . . . . . . . . . . . . . . . .
Storage Temperature -55 to 150_C. . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . .
Operating Junction Temperature -55 to 150_C. . . . . . . . . . . . . . . . . . . . . . . . .
Power Dissipation
To-236 (SOT-23)
b
SC-70
Notes
a. Derate 2.8 mW/_C above 25_C
b. Derate 1.2 mW/_C above 25_C
SPECIFICATIONS (TA = 25_C UNLESS OTHERWISE NOTED)
Parameter Symbol Test Conditions Min Typ
Static
Gate-Source
Breakdown Voltage
Gate-Source Cutoff Voltage V
Saturation Drain Current
Gate Reverse Current I
Gate Operating Current I
Drain Cutoff Current I
Gate-Source Forward Voltage V
b
Dynamic
Common-Source
Forward Transconductance
Common-Source
Input Capacitance
Common-Source
Reverse Transfer Capacitance
Equivalent Input Noise Voltage e
V
(BR)GSS
GS(off)
I
DSS
GSS
D(off)
GS(F)
g
C
C
IG = -1 mA , VDS = 0 V
VDS = 15 V, ID = 1.0 mA
VDS = 15 V, VGS = 0 V 0.15 0.7 mA
VGS = -20 V, VDS = 0 V -2 -100 pA
TA = 125_C
G
fs
iss
rss
n
VDG = 10 V, ID = 0.1 mA -2
VDS = 15 V, VGS = -5 V 2
IG = 1 mA , VDS = 0 V 0.7 V
VDS = 15 V, VGS = 0 V
f = 1 kHz
VDS = 15 V, VGS = 0 V
f = 1 MHz
VDS = 10 V, VGS = 0 V
f = 1 kHz
a
350 mW. . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . .
150 mW. . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . .
Limits
a
Max Unit
-25
-0.3 -0.9
-1 nA
0.25 0.7 mS
4.5
1.3
6
V
pA
pF
nV⁄
√Hz
Notes
a. Typical values are for DESIGN AID ONLY, not guaranteed nor subject to production testing. NPA
b. Pulse test: PW v300 ms duty cycle v3%.
www.vishay.com
2
Document Number: 70976
S-31623—Rev. E, 01-Sep-03