Vishay SST108, SST109, SST110, J108, J109 Schematic [ru]

PRODUCT SUMMARY

J/SST108 Series

Vishay Siliconix

N–Channel JFETs

J108 SST108
J109 SST109
J110 SST110

Part Number V

J/SST108
J/SST109
J/SST110

(V)

r

GS(off)

–3 to –10 8 20 4

–2 to –6 12 20 4

–0.5 to –4 18 20 4

DS(on)

Max (W)

I

Typ (pA) tON Typ (ns)

D(off)

FEATURES BENEFITS APPLICATIONS

D Low On-Resistance: J108 <8 W
D Fast Switching—tON: 4 ns
D Low Leakage: 20 pA
D Low Capacitance: 11 pF
D Low Insertion Loss

D Low Error Voltage
D High-Speed Analog Circuit Performance
D Negligible “Off-Error” Excellent Accuracy
D Good Frequency Response
D Eliminates Additional Buffering

D Analog Switches
D Choppers
D Sample-and-Hold
D Normally “On” Switches
D Current Limiters

DESCRIPTION

The J/SST108 series is designed with high-performance
analog switching applications in mind. It features low
on-resistance, good off-isolation, and fast switching.

The SST108 series is comprised of surface-mount
devices featuring the lowest r

of any TO-236

DS(on)

(SOT-23) JFET device.

The TO-226AA (TO-92) plastic package provides a
low-cost option. Both the J and SST series are available
in tape-and-reel for automated assembly (see Packaging
Information). For similar products packaged in
TO-206AC (TO-52), see the 2N5432/5433/5434 data
sheet.

Document Number: 70231
S-04028—Rev. E, 04-Jun-01

TO-226AA

(TO-92)

D

S

G

Top View

J108, J109, J110

TO-236

(SOT-23)

1

1

2

3

D

S

2

Top View

SST108 (I8)*
SST109 (I9)*
SST110 (I0)*

*Marking Code for TO-236

3

G

www.vishay.com

7-1

J/SST108 Series

Vishay Siliconix

ABSOLUTE MAXIMUM RATINGS

Gate-Drain, Gate-Source Voltage –25 V. . . . . . . . . . . . . . . . . . . . . . . . . . . . . . .

Gate Current 50 mA. . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . .

Lead Temperature (1/16” from case for 10 sec.) 300_C. . . . . . . . . . . . . . . . . . .

Storage Temperature –55 to 150_C. . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . .

SPECIFICATIONS (TA = 25_C UNLESS OTHERWISE NOTED)

Parameter Symbol Test Conditions TypaMin Max Min Max Min Max Unit

Static

Gate-Source
Breakdown Voltage

Gate-Source Cutoff Voltage V
Saturation Drain Current

Gate Reverse Current I

Gate Operating Current I

Drain Cutoff Current I

Drain-Source
On-Resistance

Gate-Source
Forward Voltage

b

Dynamic

Common-Source
Forward Transconductance

Common-Source
Output Conductance

Drain-Source
On-Resistance

Common-Source

Common-Source
Input Capacitance

Common-Source Reverse

Common-Source Reverse
Transfer Capacitance

Equivalent Input
Noise Voltage

Switching

Turn-On Time

Turn-Off Time

Notes
a. Typical values are for DESIGN AID ONLY, not guaranteed nor subject to production testing. NIP

b. Pulse test: PW v300 ms duty cycle v3%.

V

(BR)GSS

GS(off)

I

DSS

GSS

D(off)

r

DS(on)

V

GS(F)

g

g

r

ds(on)

C

C

e

t

d(on)

t

d(off)

IG = –1 mA , VDS = 0 V

VDS = 5 V, ID = 1 mA

VDS = 15 V, VGS = 0 V 80 40 10 mA

VGS = –15 V, VDS = 0 V –0.01 –3 –3 –3

G

fs

os

iss

rss

n

t

r

t

f

VDG = 10 V, ID = 10 mA
VDS = 5 V, VGS = –10 V 0.02

VGS = 0 V, VDS v 0.1 V

IG = 1 mA , VDS = 0 V 0.7 V

VDS = 5 V, ID = 10 mA, f = 1 kHz

VGS = 0 V, ID = 0 mA , f = 1 kHz

VDS = 0 V SST 60
VGS = 0 V
f = 1 MHz

VDS = 0 V SST 11

VGS = –10 V

f = 1 MHz

VDG = 5 V, ID = 10 mA

f = 1 kHz

VDD = 1.5 V, V

VDD = 1.5 V, V

See Switching Diagram

GS(H)

GS(H)

Operating Junction Temperature –55 to 150_C. . . . . . . . . . . . . . . . . . . . . . . . .

Power Dissipation

Notes
a. Derate 2.8 mW/_C above 25_C

a

Limits

J/SST108 J/SST109 J/SST110

–32

TA = 125_C

–0.01

TA = 125_C

J Series 60 85 85 85

J Series 11

= 0 V

= 0 V

–25 –25 –25

–3 –10 –2 –6 –0.5 –4

–5

3 3 3

1.0
8

17

0.6

8 12 18

15 15 15

3.5

3
1
4

18

12

350 mW. . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . .

V

V

nA

W

18

mS

W

pF

nV⁄

√Hz

ns

www.vishay.com

7-2

Document Number: 70231

S-04028—Rev. E, 04-Jun-01