Vishay SQ2309ES Schematic

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S

G

D

P-Channel MOSFET

G

TO-236

(SOT-23)

S

D

Top View

SQ2309ES*

* Marking Code:8Pxxx

2

3

1

Automotive P-Channel 60 V (D-S) 175 °C MOSFET

PRODUCT SUMMARY

VDS (V) - 60

() at VGS = - 10 V 0.335

R

DS(on)

R

() at VGS = - 4.5 V 0.500

DS(on)

(A) - 1.7

I

D

Configuration Single

Vishay Siliconix

FEATURES

• Halogen-free According to IEC 61249-2-21 Definition

®

•TrenchFET

• AEC-Q101 Qualified

•100 % Rg and UIS Tested

• Compliant to RoHS Directive 2002/95/EC

Power MOSFET

c

SQ2309ES

ORDERING INFORMATION

Package SOT-23

Lead (Pb)-free and Halogen-free SQ2309ES-T1-GE3

ABSOLUTE MAXIMUM RATINGS (TC = 25 °C, unless otherwise noted)

PARAMETER SYMBOL LIMIT UNIT

Drain-Source Voltage V

Gate-Source Voltage V

= 25 °C

T

Continuous Drain Current

C

T

= 125 °C - 1

C

Continuous Source Current (Diode Conduction) I

Pulsed Drain Current

Single Pulse Avalanche Current

Single Pulse Avalanche Energy E

Maximum Power Dissipation

a

L = 0.1 mH

a

TC = 25 °C

T

= 125 °C 0.6

C

Operating Junction and Storage Temperature Range T

DS

± 20

GS

I

D

S

IDM - 6.8

I

AS

P

D

, T

J

stg

- 60 V

- 1.7

- 2.6

A

- 15

11 mJ

2

W

- 55 to + 175 °C

THERMAL RESISTANCE RATINGS

PARAMETER SYMBOL LIMIT UNIT

Junction-to-Ambient PCB Mount

Junction-to-Foot (Drain) R

Notes

a. Pulse test; pulse width  300 μs, duty cycle  2 %. b. When mounted on 1" square PCB (FR-4 material). c. Parametric verification ongoing.

S11-2111-Rev. B, 07-Nov-11

b

1

R

thJA

thJF

166

73

°C/W

Document Number: 67024

THIS DOCUMENT IS SUBJECT TO CHANGE WITHOUT NOTICE. THE PRODUCTS DESCRIBED HEREIN AND THIS DOCUMENT

ARE SUBJECT TO SPECIFIC DISCLAIMERS, SET FORTH AT www.vishay.com/doc?91000

SQ2309ES

www.vishay.com

SPECIFICATIONS (TC = 25 °C, unless otherwise noted)

PARAMETER SYMBOL TEST CONDITIONS MIN. TYP. MAX. UNIT

Static

Drain-Source Breakdown Voltage V

Gate-Source Threshold Voltage V

Gate-Source Leakage I

Zero Gate Voltage Drain Current I

a

On-State Drain Current

Drain-Source On-State Resistance

Forward Transconductance

Dynamic

b

I

a

R

b

Input Capacitance C

Reverse Transfer Capacitance C

Total Gate Charge

Gate-Drain Charge

c

Gate Resistance R

Turn-On Delay Time

Rise Time

c

Turn-Off Delay Time

Fall Time

c

Source-Drain Diode Ratings and Characteristics

Pulsed Current

a

Forward Voltage V

DS

GS(th)

V

GSS

DSS

VGS = - 10 V VDS- 5 V - 5 - - A

D(on)

DS(on)

g

fs

iss

-3040

oss

-2130

rss

Qg

Qgs -0.8-

Qgd -1.3-

g

t

d(on)

t

r

t

-1218

d(off)

tf -914

b

I

SM

SD

Notes

a. Pulse test; pulse width  300 μs, duty cycle  2 %. b. Guaranteed by design, not subject to production testing. c. Independent of operating temperature.

V

VGS = 0 V, ID = - 250 μA - 60 - -

VDS = VGS, ID = - 250 μA - 1.5 - 2.0 - 2.5

= 0 V, VGS = ± 20 V - - ± 100 nA

DS

VGS = 0 V VDS = - 60 V - - - 1

= 0 V VDS = - 60 V, TJ = 125 °C - - - 50

GS

= 0 V VDS = - 60 V, TJ = 175 °C - - - 150

V

GS

V

= - 10 V ID = - 1.25 A - 0.268 0.335

GS

V

= - 10 V ID = - 1.25 A, TJ = 125 °C - - 0.567

GS

= - 10 V ID = - 1.25 A, TJ = 175 °C - - 0.704

V

GS

= - 4.5 V ID = - 1 A - 0.370 0.500

GS

VDS = - 5 V, ID = - 1 A - 1.8 - S

= 0 V VDS = - 25 V, f = 1 MHz

V

GS

V

= - 10 V VDS = - 30 V, ID = - 1 A

GS

f = 1 MHz 4.95 9.88 14.80 

= - 30 V, RL = 30 

V

DD

I

 - 3 A, V

D

IF = - 1.5 A, V

= - 10 V, Rg = 1 

GEN

= 0 V - - 0.85 - 1.2 V

GS

Vishay Siliconix

- 211 265

-5.58.5

-58

-914

--- 6.8A

V

μA V



pF Output Capacitance C

nC Gate-Source Charge

ns

Stresses beyond those listed under “Absolute Maximum Ratings” may cause permanent damage to the device. These are stress ratings only, and functional operation of the device at these or any other conditions beyond those indicated in the operational sections of the specifications is not implied. Exposure to absolute maximum rating conditions for extended periods may affect device reliability.

S11-2111-Rev. B, 07-Nov-11

2

Document Number: 67024

THIS DOCUMENT IS SUBJECT TO CHANGE WITHOUT NOTICE. THE PRODUCTS DESCRIBED HEREIN AND THIS DOCUMENT

ARE SUBJECT TO SPECIFIC DISCLAIMERS, SET FORTH AT www.vishay.com/doc?91000

0

2

3

5

6

8

0 2 4 6 8 10

I

D

- Drain Current (A)

VDS-Drain-to-Source Voltage (V)

V

= 10 V thru 5 V

VGS= 3 V

V

= 4 V

0

1

2

3

4

5

0.0 0.5 1.0 1.5 2.0 2.5 3.0

g

fs

-Transconductance (S)

ID-Drain Current (A)

TC= 125 °C

TC= - 55 °C

TC= 25 °C

0

100

200

300

400

500

0 10 20 30 40 50 60

C - Capacitance (pF)

VDS-Drain-to-Source Voltage (V)

C

DS

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TYPICAL CHARACTERISTICS (TA = 25 °C, unless otherwise noted)

8.0

6.4

4.8

3.2

- Drain Current (A)

D

I

1.6

0.0 0 2 4 6 8 10

Output Characteristics

TC= 25 °C

TC= 125 °C

SQ2309ES

Vishay Siliconix

TC= - 55 °C

VGS- Gate-to-Source Voltage (V)

Transfer Characteristics

Transconductance

S11-2111-Rev. B, 07-Nov-11

Capacitance

THIS DOCUMENT IS SUBJECT TO CHANGE WITHOUT NOTICE. THE PRODUCTS DESCRIBED HEREIN AND THIS DOCUMENT

ARE SUBJECT TO SPECIFIC DISCLAIMERS, SET FORTH AT www.vishay.com/doc?91000

1.0

0.8

0.6

0.4

-On-Resistance (Ω)

DS(on)

R

0.2

0.0

0.0 1.6 3.2 4.8 6.4 8.0

VGS= 4.5 V

VGS= 10 V

ID-Drain Current (A)

On-Resistance vs. Drain Current

10

ID= 1 A

8

V

= 30 V

6

4

- Gate-to-Source Voltage (V)

2

GS

V

0

0 2 4 6 8

Qg-Total Gate Charge (nC)

Gate Charge

3

Document Number: 67024

0.5

0.9

1.3

1.7

2.1

2.5

- 50 - 25 0 25 50 75 100 125 150 175

R

DS(on)

-On-Resistance (Normalized)

TJ- Junction Temperature (°C)

ID= 1.25 A

VGS= 4.5 V

VGS= 10 V

0.0

0.2

0.4

0.6

0.8

1.0

0246810

R

DS(on)

-On-Resistance (Ω)

VGS- Gate-to-Source Voltage (V)

TJ= 150 °C

TJ= 25 °C

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TYPICAL CHARACTERISTICS (TA = 25 °C, unless otherwise noted)

100

10

1

SQ2309ES

Vishay Siliconix

TJ= 150 °C

On-Resistance vs. Junction Temperature

On-Resistance vs. Gate-to-Source Voltage

0.1

- Source Current (A)

S

I

0.01

0.001

0.0 0.3 0.6 0.9 1.2 1.5

VSD- Source-to-Drain Voltage (V)

TJ= 25 °C

Source Drain Diode Forward Voltage

1.0

0.7

I

= 250 μA

0.4

I

Variance (V)

0.1

GS(th)

V

-0.2

-0.5

- 50 - 25 0 25 50 75 100 125 150 175

TJ-Temperature (°C)

= 5 mA

Threshold Voltage

S11-2111-Rev. B, 07-Nov-11

THIS DOCUMENT IS SUBJECT TO CHANGE WITHOUT NOTICE. THE PRODUCTS DESCRIBED HEREIN AND THIS DOCUMENT

ARE SUBJECT TO SPECIFIC DISCLAIMERS, SET FORTH AT www.vishay.com/doc?91000

-60

-64

-68

-72

-Drain-to-Source Voltage (V)

-76

DS

V

-80

- 50 - 25 0 25 50 75 100 125 150 175

ID= 1 mA

TJ- Junction Temperature (°C)

Drain Source Breakdown vs. Junction Temperature

4

Document Number: 67024

Vishay SQ2309ES Schematic [ru]