Vishay SIR492DP Schematic

New Product

N-Channel 12-V (D-S) MOSFET

SiR492DP

Vishay Siliconix

PRODUCT SUMMARY

VDS (V) R

12

0.0038 at V

0.0047 at V

PowerPAK SO-8

DS(on)

(Ω)

GS

= 4.5 V

= 2.5 V

e

I

(A)

D

40

Qg (Typ.)

41 nC

FEATURES

• Halogen-free

• TrenchFET

• Low Thermal Resistance PowerPAK Package with Small Size and Low 1.07 mm Profile

• 100 % R

®

Power MOSFET

Tested

g

®

APPLICATIONS

• Secondary Synchronous Rectification

RoHS

COMPLIANT

• Point-of-Load

6.15 mm

D

8

D

7

D

6

5

Bottom View

Ordering Information: SiR492DP-T1-GE3 (Lead (Pb)-free and Halogen-free)

S

1

D

5.15 mm

S

2

S

3

G

4

• Load Switch

D

G

S

N-Channel MOSFET

ABSOLUTE MAXIMUM RATINGS TA = 25 °C, unless otherwise noted

Parameter Symbol Limit Unit

Drain-Source Voltage

Gate-Source Voltage

Continuous Drain Current (T

= 150 °C)

J

= 25 °C

T

C

T

= 70 °C

C

TA = 25 °C

V

DS

V

GS

I

D

TA = 70 °C

Pulsed Drain Current

Continuous Source-Drain Diode Current

Maximum Power Dissipation

= 25 °C

T

C

= 25 °C

T

A

T

= 25 °C

C

T

= 70 °C

C

T

= 25 °C

A

I

DM

I

S

P

D

TA = 70 °C

, T

Operating Junction and Storage Temperature Range

Soldering Recommendations (Peak Temperature)

c, d

T

J

stg

Notes: a. Surface Mounted on 1" x 1" FR4 board. b. t = 10 s. c. See Solder Profile (

http://www.vishay.com/ppg?73257). The PowerPAK SO-8 is a leadless package. The end of the lead terminal is exposed

copper (not plated) as a result of the singulation process in manufacturing. A solder fillet at the exposed copper tip cannot be guaranteed and

is not required to ensure adequate bottom side solder interconnection. d. Rework Conditions: manual soldering with a soldering iron is not recommended for leadless components. e. Package limited, pulse time ≤ 200 ms.

12

± 8

e

40

e

35

a, b

27

a, b

21.6

60

30

a, b

3.5

36

23

a, b

4.2

a, b

2.7

- 50 to 150

260

V

A

W

°C

Document Number: 68840 S-82288-Rev. B, 22-Sep-08

www.vishay.com

1

New Product

SiR492DP

Vishay Siliconix

THERMAL RESISTANCE RATINGS

Parameter Symbol Typical Maximum Unit

Maximum Junction-to-Ambient

a, b

t ≤ 10 s

Maximum Junction-to-Case (Drain) Steady State

Notes: a. Surface Mounted on 1" x 1" FR4 board. b. Maximum under Steady State conditions is 70 °C/W.

SPECIFICATIONS TJ = 25 °C, unless otherwise noted

Parameter Symbol Test Conditions Min. Typ. Max. Unit

Static

Drain-Source Breakdown Voltage

V

Temperature Coefficient ΔVDS/T

DS

V

Temperature Coefficient ΔV

GS(th)

Gate-Source Threshold Voltage

Gate-Source Leakage

Zero Gate Voltage Drain Current

On-State Drain Current

Drain-Source On-State Resistance

Forward Transconductance

Dynamic

b

a

Input Capacitance

Reverse Transfer Capacitance

Total Gate Charge

Gate-Source Charge

Gate-Drain Charge

Gate Resistance

Tur n -O n De l ay T i m e

Rise Time

Turn-Off Delay Time

Fall Time

Tur n -O n De l ay T i m e

Rise Time

Turn-Off Delay Time

Fall Time

V

DS

J

GS(th)/TJ

V

GS(th)

I

GSS

I

DSS

I

V

D(on)

R

DS(on)

g

fs

C

iss

C

oss

C

rss

Q

g

Q

gs

Q

gd

R

g

t

d(on)

t

r

t

d(off)

t

f

t

d(on)

t

r

t

d(off)

t

f

VGS = 0 V, ID = 250 µA

V

= VGS, ID = 250 µA

DS

VDS = 0 V, VGS = ± 8 V

V

DS

V

= 12 V, V

DS

V

GS

V

GS

VDS = 5 V, ID = 15 A

VDS = 6 V, V

= 6 V, V

V

DS

V

DD

≅ 5 A, V

I

D

V

DD

I

≅ 5 A, V

D

R

thJA

thJC

25 30

2.9 3.5

°C/W

12 V

ID = 250 µA

12

- 3.1

0.4 1.0 V

± 100 nA

= 12 V, V

GS

≥ 5 V, V

= 4.5 V, ID = 15 A

= 2.5 V, ID = 10 A

= 0 V

GS

= 0 V, TJ = 55 °C

= 4.5 V

GS

1

10

30 A

0.0031 0.0038

0.0037 0.0047

110 S

3720

= 0 V, f = 1 MHz

GS

1290

840

= 8 V, ID = 10 A

GS

73 110

41 62

= 4.5 V, ID = 10 A

GS

4.5

8.5

f = 1 MHz 1.4 2.1 Ω

27 41

= 6 V, RL = 1.2 Ω

= 4.5 V, Rg = 1 Ω

GEN

125 190

53 80

12 18

16 25

= 6 V, RL = 1.2 Ω

= 8 V, Rg = 1 Ω

GEN

55 85

53 80

915

mV/°C

µA

Ω

pFOutput Capacitance

nC

ns

www.vishay.com 2

Document Number: 68840

S-82288-Rev. B, 22-Sep-08

New Product

SiR492DP

Vishay Siliconix

SPECIFICATIONS TJ = 25 °C, unless otherwise noted

Parameter Symbol Test Conditions Min. Typ. Max. Unit

Drain-Source Body Diode Characteristics

Continuous Source-Drain Diode Current

Pulse Diode Forward Current

Body Diode Voltage

Body Diode Reverse Recovery Time

Body Diode Reverse Recovery Charge

Reverse Recovery Fall Time

Reverse Recovery Rise Time

Notes: a. Pulse test; pulse width ≤ 300 µs, duty cycle ≤ 2 %. b. Guaranteed by design, not subject to production testing.

Stresses beyond those listed under “Absolute Maximum Ratings” may cause permanent damage to the device. These are stress ratings only, and fun ctional operation of the device at these or any other conditions beyond those indicated in the operational sections of the specifications is not implied. Exposure to absolute maximum rating conditions for extended periods may affect device reliability.

a

I

S

I

SM

V

SD

t

rr

Q

rr

t

a

t

b

IF = 2 A, dI/dt = 100 A/µs, TJ = 25 °C

TC = 25 °C

IS = 3.2 A

35

60

0.61 1.2 V

46 70 ns

30 50 nC

20

26

A

ns

Document Number: 68840 S-82288-Rev. B, 22-Sep-08

www.vishay.com

3

New Product

SiR492DP

Vishay Siliconix

TYPICAL CHARACTERISTICS 25 °C, unless otherwise noted

60

V = 5 thru 1.5 V

50

)A( tnerruC niarD -I

40

30

20

D

10

0

0.0 0.5 1.0 1.5 2.0 2.5

GS

V

- Drain-to-Source Voltage (V)

DS

1 V

Output Characteristics

0.0040

0.0038

(mΩ) ecnatsis

0.0036

e R-nO

0.0034

-

)no(SD

R

0.0032

V

GS

= 2.5 V

V

GS

= 4.5 V

2.0

1.6

)A( tnerruC niarD -I

1.2

TC = 125 °C

0.8

D

0.4

0.0

0.0 0.3 0.6 0.9 1.2 1.5

TC = 25 °C

- Gate-to-Source Voltage (V)

V

GS

TC = - 55 °C

Transfer Characteristics

5000

C

4000

)Fp( ecnati

3000

c a pa

2000

C

- C

1000

C

rss

iss

C

oss

0.0030

0

On-Resistance vs. Drain Current and Gate Voltage

8.0

)V( e

6.4

g atl

o V ecruoS-ot-etaG

4.8

3.2

-

GS

1.6

V

0.0

www.vishay.com 4

10

I D = 10 A

0 1530456075

20 30 40 50 60

I

- Drain Current (A)

D

VDS = 6 V

VDS = 4 V

V

= 8 V

DS

Qg - Total Gate Charge (nC)

Gate Charge

0

0.0 1.6 3.2 4.8 6.4 8.0

VDS - Drain-to-Source Voltage (V)

Capacitance

1.5

ID = 15 A

1.3

e c n a t s i s

)dezilam

e R - n O -

1.1 r oN(

)no(SD

R

0.9

0.7

- 50 - 25 0 25 50 75 100 125 150

T

J

V

= 2.5 V

GS

- Junction Temperature (°C)

On-Resistance vs. Junction Temperature

Document Number: 68840

S-82288-Rev. B, 22-Sep-08

VGS = 4.5 V

New Product

TYPICAL CHARACTERISTICS 25 °C, unless otherwise noted

100

(Ω) ecnatsiseR-nO ecruoS-ot-niarD -

10

)A( t

nerr

uC

ec r

u

oS

I

1

0.1

S

0.01

0.001 0

TJ = 150 °C

TJ = 25 °C

0.2

- Source-to-Drain Voltage (V)

V

SD

0.6 0.8 1.0

0.4

Source-Drain Diode Forward Voltage

)no(SD

R

1.2

SiR492DP

Vishay Siliconix

0.020

0.016

0.012

0.008

TA= 125 °C

0.004

TA= 25 °C

0.000 012345

V

- Gate-to-Source Voltage (V)

GS

On-Resistance vs. Gate-to-Source Voltage

Power (W)

50

40

30

20

10

0

0.001

Time (s)

1

10 6000.1

Single Pulse Power, Junction-to-Ambient

1ms

10 ms

1000.01

0.3

I D = 250 µA

0.1

ID = 5 mA

- 0.1

Variance (V)

)ht(

S G

V

- 0.3

- 0.5

- 50 - 25 0 25 50 75 100 125 150

T

- Temperature (°C)

J

Threshold Voltage

100

Limited byR

10

DS(on)

*

Document Number: 68840 S-82288-Rev. B, 22-Sep-08

- Drain Current (A) I

100 ms

1

D

TA= 25 °C

0.1

0.01

Single Pulse

0.1 1 10

V

DS

> minimum VGSat which R

* V

GS

BVDSS Limited

- Drain-to-Source Voltage (V)

DS(on)

1s

10 s

DC

100

is specified

Safe Operating Area, Junction-to-Ambient

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5

Vishay SIR492DP Schematic [ru]