New Product
N-Channel 30-V (D-S) MOSFET
SiR166DP
Vishay Siliconix
PRODUCT SUMMARY
VDS (V) R
30
0.0032 at V
0.0040 at V
DS(on)
(Ω)
GS
GS
= 10 V
= 4.5 V
a
g
g
Qg (Typ.)
25 nC
I
(A)
D
40
40
FEATURES
• Halogen-free According to IEC 61249-2-21
Definition
• TrenchFET
• 100 % R
®
Power MOSFET
Tested
g
• 100 % UIS Tested
PowerPAK® SO-8
• Compliant to RoHS Directive 2002/95/EC
APPLICATIONS
6.15 mm
D
8
D
7
D
6
5
Bottom View
Ordering Information: SiR166DP-T1-GE3 (Lead (Pb)-free and Halogen-free)
S
1
D
5.15 mm
S
2
S
3
G
4
• Notebook PC Core
- Low Side
•VRM
• POL
D
G
S
N-Channel MOSFET
ABSOLUTE MAXIMUM RATINGS TA = 25 °C, unless otherwise noted
Parameter Symbol Limit Unit
Drain-Source Voltage
Gate-Source Voltage
Continuous Drain Current (T
= 150 °C)
J
Pulsed Drain Current
Continuous Source-Drain Diode Current
Single Pulse Avalanche Current
Single Pulse Avalanche Energy
Maximum Power Dissipation
Operating Junction and Storage Temperature Range
Soldering Recommendations (Peak Temperature)
d, e
= 25 °C
T
C
T
= 70 °C
C
TA = 25 °C
TA = 70 °C
= 25 °C
T
C
TA = 25 °C
L = 0.1 mH
T
= 25 °C
C
= 70 °C
T
C
T
= 25 °C
A
TA = 70 °C
V
DS
V
GS
I
D
I
DM
I
S
I
AS
E
AS
P
D
T
, T
J
stg
30
± 20
g
40
g
40
b, c
29.5
b, c
21
70
g
40
b, c
4.5
40
80 mJ
48
31
b, c
5.0
b, c
3.2
- 55 to 150
260
V
A
W
°C
THERMAL RESISTANCE RATINGS
Parameter Symbol Typical Maximum Unit
Maximum Junction-to-Ambient
Maximum Junction-to-Case (Drain) Steady State
Notes:
a. Based on T
b. Surface Mounted on 1" x 1" FR4 board.
= 25 °C.
C
c. t = 10 s.
d. See Solder Profile (www.vishay.com/ppg?73257
(not plated) as a result of the singulation process in manufacturing. A solder fillet at the exposed copper tip cannot be guaranteed and is not
required to ensure adequate bottom side solder interconnection.
e. Rework Conditions: manual soldering with a soldering iron is not recommended for leadless components.
f. Maximum under Steady State conditions is 70 °C/W.
g. Package limited.
Document Number: 65471
S10-0039-Rev. A, 11-Jan-10
b, f
t ≤ 10 s
R
thJA
R
thJC
20 25
2.1 2.6
°C/W
). The PowerPAK SO-8 is a leadless package. The end of the lead terminal is exposed copper
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1
New Product
SiR166DP
Vishay Siliconix
SPECIFICATIONS TJ = 25 °C, unless otherwise noted
Parameter Symbol Test Conditions Min. Typ. Max. Unit
Static
Drain-Source Breakdown Voltage
V
Temperature Coefficient ΔVDS/T
DS
V
Temperature Coefficient ΔV
GS(th)
Gate-Source Threshold Voltage
Gate-Source Leakage
Zero Gate Voltage Drain Current
On-State Drain Current
Drain-Source On-State Resistance
Forward Transconductance
Dynamic
b
a
a
a
Input Capacitance
Reverse Transfer Capacitance
Total Gate Charge
Gate-Source Charge
Gate-Drain Charge
Gate Resistance
Tur n -O n De l ay Ti m e
Rise Time
Turn-Off Delay Time
Fall Time
Tur n -O n De l ay Ti m e
Rise Time
Turn-Off Delay Time
Fall Time
V
DS
J
GS(th)/TJ
V
GS(th)
I
GSS
I
DSS
I
V
D(on)
R
DS(on)
g
fs
C
iss
C
oss
C
rss
Q
g
Q
gs
Q
gd
R
g
t
d(on)
t
r
t
d(off)
t
f
t
d(on)
t
r
t
d(off)
t
f
Drain-Source Body Diode Characteristics
Continuous Source-Drain Diode Current
Pulse Diode Forward Current
a
Body Diode Voltage
Body Diode Reverse Recovery Time
Body Diode Reverse Recovery Charge
Reverse Recovery Fall Time
Reverse Recovery Rise Time
I
S
I
SM
V
SD
t
rr
Q
rr
t
a
t
b
Notes:
a. Pulse test; pulse width ≤ 300 µs, duty cycle ≤ 2 %.
b. Guaranteed by design, not subject to production testing.
VGS = 0 V, ID = 250 µA
ID = 250 µA
V
= VGS, ID = 250 µA
DS
VDS = 0 V, VGS = ± 20 V
V
V
DS
= 30 V, V
DS
= 30 V, V
GS
≥ 5 V, V
DS
V
= 10 V, ID = 15 A
GS
V
= 4.5 V, ID = 10 A
GS
= 0 V
GS
= 0 V, TJ = 55 °C
= 10 V
GS
VDS = 15 V, ID = 15 A
VDS = 15 V, V
VDS = 15 V, V
V
= 15 V, V
DS
= 0 V, f = 1 MHz
GS
= 10 V, ID = 20 A
GS
= 4.5 V, ID = 20 A
GS
f = 1 MHz 0.3 1.5 3 Ω
V
= 15 V, RL = 1.5 Ω
DD
≅ 10 A, V
I
D
V
≅ 10 A, V
I
D
DD
= 10 V, Rg = 1 Ω
GEN
= 15 V, RL = 1.5 Ω
= 4.5 V, Rg = 1 Ω
GEN
TC = 25 °C
IS = 3 A
IF = 10 A, dI/dt = 100 A/µs, TJ = 25 °C
30 V
32
- 6.0
mV/°C
1.2 2.2 V
± 100 nA
1
10
30 A
0.0026 0.0032
0.0032 0.0040
75 S
3340
635
300
51 77
25 38
6.5
8.5
12 24
12 24
36 65
918
28 65
21 40
44 80
16 30
40
70
0.72 1.1 V
27 54 ns
18 35 nC
14
12
µA
Ω
pFOutput Capacitance
nC
ns
A
ns
Stresses beyond those listed under “Absolute Maximum Ratings” may cause permanent damage to the device. These are stress ratings only, and functional operation
of the device at these or any other conditions beyond those indicated in the operational sections of the specifications is not implied. Exposure to absolute maximum
rating conditions for extended periods may affect device reliability.
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Document Number: 65471
S10-0039-Rev. A, 11-Jan-10
New Product
TYPICAL CHARACTERISTICS 25 °C, unless otherwise noted
SiR166DP
Vishay Siliconix
70
VGS=10V thru 3 V
56
42
28
- Drain Current (A)I
D
14
0
0.0 0.5 1.0 1.5 2.0 2.5
- Drain-to-Source Voltage (V)
V
DS
Output Characteristics
0.0050
0.0044
0.0038
VGS=4.5V
10
8
6
4
- Drain Current (A)I
D
2
0
012345
TC= 25 °C
TC= 125 °C
- Gate-to-Source Voltage (V)
V
GS
TC= - 55 °C
Transfer Characteristics
4500
3600
2700
C
iss
0.0032
- On-Resistance (Ω)R
DS(on)
0.0026
0.0020
VGS=10V
01428 42 56 70
ID- Drain Current (A)
On-Resistance vs. Drain Current and Gate Voltage
10
ID=10A
8
6
4
- Gate-to-Source Voltage (V)
GS
2
V
0
0 1122334455
VDS=15V
VDS=10V
Qg- Total Gate Charge (nC)
VDS=20V
Gate Charge
1800
C - Capacitance (pF)
900
0
C
oss
C
rss
0 5 10 15 20 25 30
VDS- Drain-to-Source Voltage (V)
Capacitance
2.0
ID=15A
1.7
VGS=10V
1.4
- On-ResistanceR
1.1
(Normalized)
DS(on)
0.8
0.5
- 50 - 25 0 25 50 75 100 125 150
-Junction Temperature (°C)
T
J
On-Resistance vs. Junction Temperature
VGS=4.5V
Document Number: 65471
S10-0039-Rev. A, 11-Jan-10
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3
New Product
SiR166DP
Vishay Siliconix
TYPICAL CHARACTERISTICS 25 °C, unless otherwise noted
100
10
1
0.1
- Source Current (A)I
S
0.01
0.001
0.0 0.2 0.4 0.6 0.8 1.0 1.2
TJ= 150 °C
TJ= 25 °C
VSD-Source-to-Drain Voltage (V)
Source-Drain Diode Forward Voltage
0.5
0.2
- 0.1
0.015
ID=15A
0.012
0.009
- On-Resistance (Ω)
0.006
DS(on)
R
0.003
0.000
012345678 910
VGS- Gate-to-Source Voltage (V)
TJ= 125 °C
TJ= 25 °C
On-Resistance vs. Gate-to-Source Voltage
200
160
120
Variance (V)V
- 0.4
GS(th)
- 0.7
- 1.0
- 50 - 25 0 25 50 75 100 125 150
TJ- Temperature (°C)
ID= 250 µA
Threshold Voltage
- Drain Current (A)
D
I
ID=5mA
100
Limited byR
10
1
0.1
Single Pulse
0.01
0.01
* V
*
DS(on)
TA= 25 °C
0.1 1 10
V
- Drain-to-Source Voltage (V)
DS
> minimum VGSat which R
GS
Power (W)
BVDSS Limited
DS(on)
Safe Operating Area, Junction-to-Ambient
80
40
0
0.1
Time (s)
Single Pulse Power, Junction-to-Ambient
1ms
10 ms
100 ms
1s
10 s
DC
100
is specified
011100.00.01
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Document Number: 65471
S10-0039-Rev. A, 11-Jan-10
New Product
TYPICAL CHARACTERISTICS 25 °C, unless otherwise noted
100
80
SiR166DP
Vishay Siliconix
- Drain Current (A)
D
I
60
40
20
Package Limited
0
0 255075100125150
- Case Temperature (°C)
T
C
Current Derating*
60
48
36
Power (W)
24
12
2.5
2.0
1.5
Power (W)
1.0
0.5
0
0 25 50 75 100 125 150
- Case Temperature (°C)
T
C
Power, Junction-to-Case
* The power dissipation PD is based on T
dissipation limit for cases where additional heatsinking is used. It is used to determine the current rating, when this rating falls below the package
= 150 °C, using junction-to-case thermal resistance, and is more useful in settling the upper
J(max)
0.0
0 25 50 75 100 125 150
-Ambient Temperature (°C)
T
A
Power, Junction-to-Ambient
limit.
Document Number: 65471
www.vishay.com
S10-0039-Rev. A, 11-Jan-10
5
New Product
SiR166DP
Vishay Siliconix
TYPICAL CHARACTERISTICS 25 °C, unless otherwise noted
1
Duty Cycle = 0.5
0.2
Thermal Impedance
Normalized Effective Transient
Thermal Impedance
Normalized Effective Transient
0.1
0.01
0.1
-4
10
1
0.1
0.05
0.02
Duty Cycle = 0.5
0.2
0.1
0.05
0.02
Single Pulse
Notes:
P
DM
t
1
t
2
t
100
thJA
1
t
2
= 70 °C/W
(t)
100010
1. Duty Cycle, D =
2. Per Unit Base = R
3. T
Single Pulse
-3
10
-2
10
-1
1
JM-TA=PDMZthJA
4. Surface Mounted
10
Square WavePulse Duration (s)
Normalized Thermal Transient Impedance, Junction-to-Ambient
0.01
-4
10
-3
10
-2
10
-1
110
Square WavePulse Duration (s)
Normalized Thermal Transient Impedance, Junction-to-Case
Vishay Siliconix maintains worldwide manufacturing capability. Products may be manufactured at one of several qualified locations. Reliability data for Silicon
Technology and Package Reliability represent a composite of all qualified locations. For related documents such as package/tape drawings, part marking, and
reliability data, see www.vishay.com/ppg?65471
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.
Document Number: 65471
S10-0039-Rev. A, 11-Jan-10
Legal Disclaimer Notice
Vishay
Disclaimer
All product specifications and data are subject to change without notice.
Vishay Intertechnology, Inc., its affiliates, agents, and employees, and all persons acting on its or their behalf
(collectively, “Vishay”), disclaim any and all liability for any errors, inaccuracies or incompleteness contained herein
or in any other disclosure relating to any product.
Vishay disclaims any and all liability arising out of the use or application of any product described herein or of any
information provided herein to the maximum extent permitted by law. The product specifications do not expand or
otherwise modify Vishay’s terms and conditions of purchase, including but not limited to the warranty expressed
therein, which apply to these products.
No license, express or implied, by estoppel or otherwise, to any intellectual property rights is granted by this
document or by any conduct of Vishay.
The products shown herein are not designed for use in medical, life-saving, or life-sustaining applications unless
otherwise expressly indicated. Customers using or selling Vishay products not expressly indicated for use in such
applications do so entirely at their own risk and agree to fully indemnify Vishay for any damages arising or resulting
from such use or sale. Please contact authorized Vishay personnel to obtain written terms and conditions regarding
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Product names and markings noted herein may be trademarks of their respective owners.
Document Number: 91000 www.vishay.com
Revision: 18-Jul-08 1
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