Vishay SIR166DP Schematic

New Product

N-Channel 30-V (D-S) MOSFET

SiR166DP

Vishay Siliconix

PRODUCT SUMMARY

VDS (V) R

30

0.0032 at V

0.0040 at V

DS(on)

(Ω)

GS

= 10 V

= 4.5 V

a

g

Qg (Typ.)

25 nC

I

(A)

D

40

FEATURES

• Halogen-free According to IEC 61249-2-21 Definition

• TrenchFET

• 100 % R

®

Power MOSFET

Tested

g

• 100 % UIS Tested

PowerPAK® SO-8

• Compliant to RoHS Directive 2002/95/EC

APPLICATIONS

6.15 mm

D

8

D

7

D

6

5

Bottom View

Ordering Information: SiR166DP-T1-GE3 (Lead (Pb)-free and Halogen-free)

S

1

D

5.15 mm

S

2

S

3

G

4

• Notebook PC Core

- Low Side

•VRM

• POL

D

G

S

N-Channel MOSFET

ABSOLUTE MAXIMUM RATINGS TA = 25 °C, unless otherwise noted

Parameter Symbol Limit Unit

Drain-Source Voltage Gate-Source Voltage

Continuous Drain Current (T

= 150 °C)

J

Pulsed Drain Current

Continuous Source-Drain Diode Current

Single Pulse Avalanche Current Single Pulse Avalanche Energy

Maximum Power Dissipation

Operating Junction and Storage Temperature Range

Soldering Recommendations (Peak Temperature)

d, e

= 25 °C

T

C

T

= 70 °C

C

TA = 25 °C TA = 70 °C

= 25 °C

T

C

TA = 25 °C

L = 0.1 mH

T

= 25 °C

C

= 70 °C

T

C

T

= 25 °C

A

TA = 70 °C

V

DS

V

GS

I

D

I

DM

I

S

I

AS

E

AS

P

D

T

, T

J

stg

30

± 20

g

40

g

40

b, c

29.5

b, c

21

70

g

40

b, c

4.5 40

80 mJ 48 31

b, c

5.0

b, c

3.2

- 55 to 150

260

V

A

W

°C

THERMAL RESISTANCE RATINGS

Parameter Symbol Typical Maximum Unit

Maximum Junction-to-Ambient Maximum Junction-to-Case (Drain) Steady State

Notes: a. Based on T b. Surface Mounted on 1" x 1" FR4 board.

= 25 °C.

C

c. t = 10 s. d. See Solder Profile (www.vishay.com/ppg?73257

(not plated) as a result of the singulation process in manufacturing. A solder fillet at the exposed copper tip cannot be guaranteed and is not

required to ensure adequate bottom side solder interconnection. e. Rework Conditions: manual soldering with a soldering iron is not recommended for leadless components. f. Maximum under Steady State conditions is 70 °C/W. g. Package limited.

Document Number: 65471 S10-0039-Rev. A, 11-Jan-10

b, f

t ≤ 10 s

R

thJA

R

thJC

20 25

2.1 2.6

°C/W

). The PowerPAK SO-8 is a leadless package. The end of the lead terminal is exposed copper

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1

New Product

SiR166DP

Vishay Siliconix

SPECIFICATIONS TJ = 25 °C, unless otherwise noted

Parameter Symbol Test Conditions Min. Typ. Max. Unit

Static

Drain-Source Breakdown Voltage

V

Temperature Coefficient ΔVDS/T

DS

V

Temperature Coefficient ΔV

GS(th)

Gate-Source Threshold Voltage

Gate-Source Leakage

Zero Gate Voltage Drain Current

On-State Drain Current

Drain-Source On-State Resistance

Forward Transconductance

Dynamic

b

a

Input Capacitance

Reverse Transfer Capacitance

Total Gate Charge

Gate-Source Charge

Gate-Drain Charge

Gate Resistance

Tur n -O n De l ay Ti m e

Rise Time

Turn-Off Delay Time

Fall Time

Tur n -O n De l ay Ti m e

Rise Time

Turn-Off Delay Time

Fall Time

V

DS

J

GS(th)/TJ

V

GS(th)

I

GSS

I

DSS

I

V

D(on)

R

DS(on)

g

fs

C

iss

C

oss

C

rss

Q

g

Q

gs

Q

gd

R

g

t

d(on)

t

r

t

d(off)

t

f

t

d(on)

t

r

t

d(off)

t

f

Drain-Source Body Diode Characteristics

Continuous Source-Drain Diode Current

Pulse Diode Forward Current

a

Body Diode Voltage

Body Diode Reverse Recovery Time

Body Diode Reverse Recovery Charge

Reverse Recovery Fall Time

Reverse Recovery Rise Time

I

S

I

SM

V

SD

t

rr

Q

rr

t

a

t

b

Notes: a. Pulse test; pulse width ≤ 300 µs, duty cycle ≤ 2 %. b. Guaranteed by design, not subject to production testing.

VGS = 0 V, ID = 250 µA

ID = 250 µA

V

= VGS, ID = 250 µA

DS

VDS = 0 V, VGS = ± 20 V

V

DS

= 30 V, V

DS

= 30 V, V

GS

≥ 5 V, V

DS

V

= 10 V, ID = 15 A

GS

V

= 4.5 V, ID = 10 A

GS

= 0 V

GS

= 0 V, TJ = 55 °C

= 10 V

GS

VDS = 15 V, ID = 15 A

VDS = 15 V, V

V

= 15 V, V

DS

= 0 V, f = 1 MHz

GS

= 10 V, ID = 20 A

GS

= 4.5 V, ID = 20 A

GS

f = 1 MHz 0.3 1.5 3 Ω

V

= 15 V, RL = 1.5 Ω

DD

≅ 10 A, V

I

D

V

≅ 10 A, V

I

D

DD

= 10 V, Rg = 1 Ω

GEN

= 15 V, RL = 1.5 Ω

= 4.5 V, Rg = 1 Ω

GEN

TC = 25 °C

IS = 3 A

IF = 10 A, dI/dt = 100 A/µs, TJ = 25 °C

30 V

32

- 6.0

mV/°C

1.2 2.2 V

± 100 nA

1

10

30 A

0.0026 0.0032

0.0032 0.0040

75 S

3340

635

300

51 77

25 38

6.5

8.5

12 24

36 65

918

28 65

21 40

44 80

16 30

40

70

0.72 1.1 V

27 54 ns

18 35 nC

14

12

µA

Ω

pFOutput Capacitance

nC

ns

A

ns

Stresses beyond those listed under “Absolute Maximum Ratings” may cause permanent damage to the device. These are stress ratings only, and functional operation of the device at these or any other conditions beyond those indicated in the operational sections of the specifications is not implied. Exposure to absolute maximum rating conditions for extended periods may affect device reliability.

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Document Number: 65471

S10-0039-Rev. A, 11-Jan-10

New Product

TYPICAL CHARACTERISTICS 25 °C, unless otherwise noted

SiR166DP

Vishay Siliconix

70

VGS=10V thru 3 V

56

42

28

- Drain Current (A)I

D

14

0

0.0 0.5 1.0 1.5 2.0 2.5

- Drain-to-Source Voltage (V)

V

DS

Output Characteristics

0.0050

0.0044

0.0038

VGS=4.5V

10

8

6

4

- Drain Current (A)I

D

2

0

012345

TC= 25 °C

TC= 125 °C

- Gate-to-Source Voltage (V)

V

GS

TC= - 55 °C

Transfer Characteristics

4500

3600

2700

C

iss

0.0032

- On-Resistance (Ω)R

DS(on)

0.0026

0.0020

VGS=10V

01428 42 56 70

ID- Drain Current (A)

On-Resistance vs. Drain Current and Gate Voltage

10

ID=10A

8

6

4

- Gate-to-Source Voltage (V)

GS

2

V

0

0 1122334455

VDS=15V

VDS=10V

Qg- Total Gate Charge (nC)

VDS=20V

Gate Charge

1800

C - Capacitance (pF)

900

0

C

oss

C

rss

0 5 10 15 20 25 30

VDS- Drain-to-Source Voltage (V)

Capacitance

2.0

ID=15A

1.7

VGS=10V

1.4

- On-ResistanceR

1.1

(Normalized)

DS(on)

0.8

0.5

- 50 - 25 0 25 50 75 100 125 150

-Junction Temperature (°C)

T

J

On-Resistance vs. Junction Temperature

VGS=4.5V

Document Number: 65471 S10-0039-Rev. A, 11-Jan-10

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Vishay SIR166DP Schematic [ru]