Vishay IRL630, SiHL630 Data Sheet
N-Channel MOSFET
G
D
S
TO-220AB
G
D
S
Available
RoHS*
COMPLIANT
Power MOSFET
IRL630, SiHL630
Vishay Siliconix
PRODUCT SUMMARY
VDS (V) 200 V
(Ω)V
R
DS(on)
(Max.) (nC) 40
Q
g
(nC) 5.5
Q
gs
(nC) 24
Q
gd
Configuration Single
= 5 V 0.40
GS
FEATURES
• Dynamic dV/dt Rating
• Repetitive Avalanche Rated
• Logic Level Gate Drive
•R
DS(on)
• 150 °C Operating Temperature
•Fast Switching
• Ease of Paralleling
• Compliant to RoHS Directive 2002/95/EC
DESCRIPTION
Third generation Power MOSFETs from Vishay provide the
designer with the best combination of fast switching,
ruggedized device design, low on-resistance and
cost-effectiveness.
The TO-220AB package is universally preferred for all
commercial-industrial applications at power dissipation
levels to approximately 50 W. The low thermal resistance
and low package cost of the TO-220AB contribute to its
wide acceptance throughout the industry.
ORDERING INFORMATION
Package TO-220AB
Lead (Pb)-free
SnPb
IRL630PbF
SiHL630-E3
IRL630
SiHL630
Specified at VGS = 4 V and 5 V
ABSOLUTE MAXIMUM RATINGS (TC = 25 °C, unless otherwise noted)
PARAMETER SYMBOL LIMIT UNIT
Drain-Source Voltage V
Gate-Source Voltage V
Continuous Drain Current
Pulsed Drain Current
a
VGS at 5.0 V
TC = 25 °C
= 100 °C 5.7
C
Linear Derating Factor 0.59 W/°C
Single Pulse Avalanche Energy
Repetitive Avalanche Current
Repetitive Avalanche Energy
Maximum Power Dissipation T
Peak Diode Recovery dV/dt
b
a
a
= 25 °C P
c
C
Operating Junction and Storage Temperature Range T
Soldering Recommendations (Peak Temperature) for 10 s 300
Mounting Torque 6-32 or M3 screw
Notes
a. Repetitive rating; pulse width limited by maximum junction temperature (see fig. 11).
b. V
= 25 V, starting TJ = 25 °C, L = 4.6 mH, Rg = 25 Ω, IAS = 9.0 A (see fig. 12).
DD
c. I
≤ 9.0 A, dV/dt ≤ 120 A/μs, VDD ≤ VDS, TJ ≤ 150 °C.
SD
d. 1.6 mm from case.
* Pb containing terminations are not RoHS compliant, exemptions may apply
Document Number: 91303 www.vishay.com
S11-0519-Rev. B, 21-Mar-11 1
THE PRODUCT DESCRIBED HEREIN AND THIS DATASHEET ARE SUBJECT TO SPECIFIC DISCLAIMERS, SET FORTH AT
This datasheet is subject to change without notice.
200
DS
± 10
GS
I
D
9.0
V
AT
IDM 36
E
AS
I
AR
E
AR
D
250 mJ
9.0 A
7.4 mJ
74 W
dV/dt 5.0 V/ns
, T
J
stg
- 55 to + 150
d
°C
10 lbf · in
1.1 N · m
www.vishay.com/doc?91000
IRL630, SiHL630
S
D
G
Vishay Siliconix
THERMAL RESISTANCE RATINGS
PARAMETER SYMBOL TYP. MAX. UNIT
Maximum Junction-to-Ambient R
Maximum Junction-to-Case (Drain) R
thJA
thCS
thJC
-62
0.50 -
-1.7
°C/WCase-to-Sink, Flat, Greased Surface R
SPECIFICATIONS (TJ = 25 °C, unless otherwise noted)
PARAMETER SYMBOL TEST CONDITIONS MIN. TYP. MAX. UNIT
Static
Drain-Source Breakdown Voltage V
Temperature Coefficient ΔVDS/TJ Reference to 25 °C, ID = 1 mA - 0.27 -
V
DS
Gate-Source Threshold Voltage V
Gate-Source Leakage I
Zero Gate Voltage Drain Current I
Drain-Source On-State Resistance R
Forward Transconductance g
DS
GS(th)
V
GSS
DSS
DS(on)
fs
Dynamic
Input Capacitance C
Reverse Transfer Capacitance C
Total Gate Charge Q
Gate-Drain Charge Q
Turn-On Delay Time t
Rise Time t
Turn-Off Delay Time t
Fall Time t
Internal Drain Inductance L
Internal Source Inductance L
iss
- 220 -
oss
-70-
rss
g
--5.5
gs
--24
gd
d(on)
r
-38-
d(off)
-33-
f
D
Between lead,
6 mm (0.25") from
package and center of
S
die contact
Drain-Source Body Diode Characteristics
Continuous Source-Drain Diode Current I
Pulsed Diode Forward Current
a
Body Diode Voltage V
Body Diode Reverse Recovery Time t
Body Diode Reverse Recovery Charge Q
Forward Turn-On Time t
S
I
SM
SD
rr
rr
on
MOSFET symbol
showing the
integral reverse
p - n junction diode
TJ = 25 °C, IF = 9.0 A, dI/dt = 100 A/μs
Notes
a. Repetitive rating; pulse width limited by maximum junction temperature (see fig. 11).
b. Pulse width ≤ 300 μs; duty cycle ≤ 2 %.
www.vishay.com Document Number: 91303
2 S11-0519-Rev. B, 21-Mar-11
THE PRODUCT DESCRIBED HEREIN AND THIS DATASHEET ARE SUBJECT TO SPECIFIC DISCLAIMERS, SET FORTH AT
This datasheet is subject to change without notice.
VGS = 0 V, ID = 250 μA 200 - -
VDS = VGS, ID = 250 μA 1.0 -
= ± 10 - -
GS
VDS = 200 V, VGS = 0 V - -
= 160 V, VGS = 0 V, TJ = 125 °C - -
V
DS
= 5.0 V ID = 5.4 A
V
GS
V
= 4.0 V ID = 4.5 A
GS
VDS = 50 V, ID = 5.4 A
VGS = 0 V
= 25 V
V
DS
b
b
b
--0.40
--0.50
4.8 - -
- 1100 -
2.0 V
± 100 nA
25
250
f = 1.0 MHz, see fig. 5
--40
V
GS
= 10 V
ID = 9.0 A, VDS = 160 V,
see fig. 6 and 13
b
-8.0-
V
= 100 V, ID = 9.0 A
DD
R
= 6.0 Ω, RD = 11 Ω, see fig. 10
g
G
b
D
S
-57-
-4.5-
-7.5-
--9.0
--36
TJ = 25 °C, IS = 9.0 A, VGS = 0 V
b
--
-
b
-
2.0 V
230 350 ns
1.7 2.6 μC
Intrinsic turn-on time is negligible (turn-on is dominated by LS and LD)
www.vishay.com/doc?91000
V
V/°C
μA
Ω
S
pFOutput Capacitance C
nC Gate-Source Charge Q
ns
nH
A
IRL630, SiHL630
TYPICAL CHARACTERISTICS (25 °C, unless otherwise noted)
Fig. 1 - Typical Output Characteristics, TC = 25 °C
Vishay Siliconix
Fig. 3 - Typical Transfer Characteristics
Fig. 2 - Typical Output Characteristics, T
Document Number: 91303 www.vishay.com
S11-0519-Rev. B, 21-Mar-11 3
THE PRODUCT DESCRIBED HEREIN AND THIS DATASHEET ARE SUBJECT TO SPECIFIC DISCLAIMERS, SET FORTH AT
= 150 °C
C
This datasheet is subject to change without notice.
Fig. 4 - Normalized On-Resistance vs. Temperature
www.vishay.com/doc?91000
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