Vishay IRL510, SiHL510 Data Sheet
TO-220AB
G
D
S
Available
RoHS*
COMPLIANT
Power MOSFET
IRL510, SiHL510
Vishay Siliconix
PRODUCT SUMMARY
VDS (V) 100
(Ω)V
R
DS(on)
Q
(Max.) (nC) 6.1
g
Q
(nC) 2.6
gs
Q
(nC) 3.3
gd
Configuration Single
= 5.0 V 0.54
GS
D
FEATURES
• Dynamic dV/dt Rating
• Repetitive Avalanche Rated
• Logic-Level Gate Drive
•R
DS(on)
• 175 °C Operating Temperature
•Fast Switching
• Ease of Paralleling
• Compliant to RoHS Directive 2002/95/EC
DESCRIPTION
Third generation Power MOSFETs from Vishay provide the
G
designer with the best combination of fast switching,
ruggedized device design, low on-resistance and
cost-effectiveness.
The TO-220AB package is universally preferred for all
S
N-Channel MOSFET
commercial-industrial applications at power dissipation
levels to approximately 50 W. The low thermal resistance
and low package cost of the TO-220AB contribute to its
wide acceptance throughout the industry.
ORDERING INFORMATION
Package TO-220AB
Lead (Pb)-free
SnPb
IRL510PbF
SiHL510-E3
IRL510
SiHL510
Specified at VGS = 4 V and 5 V
ABSOLUTE MAXIMUM RATINGS (TC = 25 °C, unless otherwise noted)
PARAMETER SYMBOL LIMIT UNIT
Drain-Source Voltage V
Gate-Source Voltage V
T
= 25 °C
Continuous Drain Current V
Pulsed Drain Current
a
GS
at 5 V
C
T
= 100 °C 4.0
C
DS
± 10
GS
I
D
IDM 18
Linear Derating Factor 0.29 W/°C
Single Pulse Avalanche Energy
Repetitive Avalanche Current
Repetitive Avalanche Energy
Maximum Power Dissipation T
Peak Diode Recovery dV/dt
Operating Junction and Storage Temperature Range T
b
a
a
= 25 °C P
c
C
E
AS
I
AR
E
AR
D
dV/dt 5.5 V/ns
, T
J
stg
Soldering Recommendations (Peak Temperature) for 10 s 300
Mounting Torque 6-32 or M3 screw
Notes
a. Repetitive rating; pulse width limited by maximum junction temperature (see fig. 11).
b. V
= 25 V, starting TJ = 25 °C, L = 4.8 mH, Rg = 25 Ω, IAS = 5.6 A (see fig. 12).
DD
c. I
≤ 5.6 A, dI/dt ≤ 75 A/μs, VDD ≤ VDS, TJ ≤ 175 °C.
SD
d. 1.6 mm from case.
* Pb containing terminations are not RoHS compliant, exemptions may apply
Document Number: 91297 www.vishay.com
S11-0518-Rev. B, 21-Mar-11 1
THE PRODUCT DESCRIBED HEREIN AND THIS DATASHEET ARE SUBJECT TO SPECIFIC DISCLAIMERS, SET FORTH AT
This datasheet is subject to change without notice.
100
5.6
100 mJ
5.6 A
4.3 mJ
43 W
- 55 to + 175
d
10 lbf · in
1.1 N · m
www.vishay.com/doc?91000
V
A
°C
IRL510, SiHL510
Vishay Siliconix
THERMAL RESISTANCE RATINGS
PARAMETER SYMBOL TYP. MAX. UNIT
Maximum Junction-to-Ambient R
Case-to-Sink, Flat, Greased Surface
Maximum Junction-to-Case (Drain)
thJA
R
thCS
R
thJC
-62
0.50 -
-3.5
°C/W
SPECIFICATIONS (TJ = 25 °C, unless otherwise noted)
PARAMETER SYMBOL TEST CONDITIONS MIN. TYP. MAX. UNIT
Static
Drain-Source Breakdown Voltage V
Temperature Coefficient
V
DS
Gate-Source Threshold Voltage V
Gate-Source Leakage I
Zero Gate Voltage Drain Current I
Drain-Source On-State Resistance R
Forward Transconductance g
DS
ΔV
DS/TJ
GS(th)
V
GSS
DSS
V
DS(on)
fs
V
Dynamic
Input Capacitance C
Reverse Transfer Capacitance C
Total Gate Charge Q
Gate-Drain Charge Q
Turn-On Delay Time t
Rise Time t
Turn-Off Delay Time t
Fall Time t
Internal Drain Inductance L
iss
-80-
oss
-15-
rss
g
--2.6
gs
--3.3
gd
d(on)
r
-16-
d(off)
-18-
f
D
V
Between lead,
6 mm (0.25") from
package and center of
Internal Source Inductance L
S
die contact
Drain-Source Body Diode Characteristics
Continuous Source-Drain Diode Current I
Pulsed Diode Forward Current
a
Body Diode Voltage V
Body Diode Reverse Recovery Time t
Body Diode Reverse Recovery Charge Q
Forward Turn-On Time t
S
I
SM
SD
rr
rr
on
MOSFET symbol
showing the
integral reverse
p - n junction diode
Notes
a. Repetitive rating; pulse width limited by maximum junction temperature (see fig. 11).
b. Pulse width ≤ 300 μs; duty cycle ≤ 2 %.
VGS = 0 V, ID = 250 μA 100 - - V
Reference to 25 °C, I
= 1 mA
D
-0.12-
VDS = VGS, ID = 250 μA 1.0 - 2.0 V
= ± 10 V - - ± 100 nA
GS
VDS = 100 V, VGS = 0 V - - 25
V
= 80 V, VGS = 0 V, TJ = 150 °C - - 250
DS
= 5.0 V ID = 3.4 A
GS
= 4.0 V ID = 2.8 A
GS
VDS = 50 V, ID = 3.4 A
VGS = 0 V,
V
= 25 V,
DS
f = 1.0 MHz, see fig. 5
b
b
b
- - 0.54
- - 0.76
1.9 - - S
-250-
--6.1
= 5.6 A, VDS = 80 V
I
= 5.0 V
GS
D
see fig. 6 and 13
b
-9.3-
= 50 V, ID = 5.6 A
V
DD
R
= 12 Ω, RD= 8.4 Ω
g
see fig. 10
b
G
G
TJ = 25 °C, IS = 5.6 A, VGS = 0 V
TJ = 25 °C, IF = 5.6 A,
dI/dt = 100 A/μs
b
D
S
D
S
b
-47-
-4.5-
-7.5-
--5.6
--18
--2.5V
- 110 130 ns
- 0.50 0.65 μC
Intrinsic turn-on time is negligible (turn-on is dominated by LS and LD)
V/°C
μA
Ω
pFOutput Capacitance C
nC Gate-Source Charge Q
ns
nH
A
www.vishay.com Document Number: 91297
2 S11-0518-Rev. B, 21-Mar-11
This datasheet is subject to change without notice.
THE PRODUCT DESCRIBED HEREIN AND THIS DATASHEET ARE SUBJECT TO SPECIFIC DISCLAIMERS, SET FORTH AT
www.vishay.com/doc?91000
IRL510, SiHL510
TYPICAL CHARACTERISTICS (25 °C, unless otherwise noted)
Fig. 1 - Typical Output Characteristics, TC = 25 °C
Vishay Siliconix
Fig. 3 - Typical Transfer Characteristics
Fig. 2 - Typical Output Characteristics, T
Document Number: 91297 www.vishay.com
S11-0518-Rev. B, 21-Mar-11 3
THE PRODUCT DESCRIBED HEREIN AND THIS DATASHEET ARE SUBJECT TO SPECIFIC DISCLAIMERS, SET FORTH AT
= 175 °C
C
This datasheet is subject to change without notice.
Fig. 4 - Normalized On-Resistance vs. Temperature
www.vishay.com/doc?91000
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