Vishay IRFP460B, SiHG460B Data Sheet

www.vishay.com

TO-247AC

G

D

S

IRFP460B, SiHG460B

Vishay Siliconix

D Series Power MOSFET

PRODUCT SUMMARY

VDS (V) at TJ max. 550

R

max. at 25 °C ()VGS = 10 V 0.25

DS(on)

Q

max. (nC) 170

g

Q

(nC) 14

gs

Q

(nC) 28

gd

Configuration Single

G

N-Channel MOSFET

FEATURES

•Optimal Design

- Low Area Specific On-Resistance

- Low Input Capacitance (C

iss

)

- Reduced Capacitive Switching Losses

- High Body Diode Ruggedness

- Avalanche Energy Rated (UIS)

• Optimal Efficiency and Operation

D

- Low Cost

- Simple Gate Drive Circuitry

- Low Figure-of-Merit (FOM): Ron x Q

g

- Fast Switching

• Material categorization: For definitions of compliance
please see www.vishay.com/doc?99912

Note

* Lead (Pb)-containing terminations are not RoHS-compliant.

S

Exemptions may apply.

APPLICATIONS

• Consumer Electronics

- Displays (LCD or Plasma TV)

• Server and Telecom Power Supplies

- SMPS

• Industrial

- Welding

- Induction Heating

- Motor Drives

• Battery Chargers

•SMPS

- Power Factor Correction (PFC)

ORDERING INFORMATION

Package TO-247AC
Lead (Pb)-free IRFP460BPbF

Lead (Pb)-free and Halogen-free SiHG460B-GE3

ABSOLUTE MAXIMUM RATINGS (TC = 25 °C, unless otherwise noted)

PARAMETER SYMBOL LIMIT UNIT

Drain-Source Voltage V

Gate-Source Voltage AC (f > 1 Hz) 30

= 25 °C

T

Continuous Drain Current (T

Pulsed Drain Current
Linear Derating Factor 2.2 W/°C
Single Pulse Avalanche Energy
Maximum Power Dissipation P
Operating Junction and Storage Temperature Range T
Drain-Source Voltage Slope T
Reverse Diode dV/dt
Soldering Recommendations (Peak Temperature) for 10 s 300

Notes

a. Repetitive rating; pulse width limited by maximum junction temperature.

= 50 V, starting TJ = 25 °C, L = 10 mH, Rg = 25 , IAS = 7.5 A.

b. V

DD

c. 1.6 mm from case.

 ID, starting TJ = 25 °C.

d. I

SD

S12-0812-Rev. B, 16-Apr-12

THIS DOCUMENT IS SUBJECT TO CHANGE WITHOUT NOTICE. THE PRODUCTS DESCRIBED HEREIN AND THIS DOCUMENT

= 150 °C) VGS at 10 V

J

a

b

d

For technical questions, contact: [e-mail]

ARE SUBJECT TO SPECIFIC DISCLAIMERS, SET FORTH AT www.vishay.com/doc?91000

C

= 100 °C 13

C

= 125 °C

J

1

DS

V

GS

I

D

IDM 62

E

AS

D

, T

J

stg

dV/dt

500

± 20

20

281 mJ
278 W

- 55 to + 150 °C
24

0.36

c

Document Number: 91502

V Gate-Source Voltage

AT

V/ns

°C

S

D

G

IRFP460B, SiHG460B

www.vishay.com

THERMAL RESISTANCE RATINGS

PARAMETER SYMBOL TYP. MAX. UNIT

Maximum Junction-to-Ambient R

Maximum Junction-to-Case (Drain)

thJA

R

thJC

-40

-0.45

SPECIFICATIONS (TJ = 25 °C, unless otherwise noted)

PARAMETER SYMBOL TEST CONDITIONS MIN. TYP. MAX. UNIT

Static

Drain-Source Breakdown Voltage V

V

Temperature Coefficient

DS

Gate-Source Threshold Voltage (N) V

Gate-Source Leakage I

Zero Gate Voltage Drain Current I

Drain-Source On-State Resistance R

Forward Transconductance g

Dynamic

Input Capacitance C

Output Capacitance C

Reverse Transfer Capacitance C

Effective output capacitance, energy

a

related

Effective output capacitance, time

b

related

Total Gate Charge Q

Gate-Drain Charge Q

Turn-On Delay Time t

Rise Time t

Turn-Off Delay Time t

Fall Time t

Gate Input Resistance R

Drain-Source Body Diode Characteristics

Continuous Source-Drain Diode Current I

Pulsed Diode Forward Current I

Diode Forward Voltage V

Reverse Recovery Time t

Reverse Recovery Charge Q

Reverse Recovery Current I

Notes

a. C
b. C

is a fixed capacitance that gives the same energy as C

oss(er)

is a fixed capacitance that gives the same charging time as C

oss(tr)

DS

V

DS/TJ

GS(th)

V

GSS

DSS

V

DS(on)

fs

iss

- 152 -

oss

-13-

rss

C

o(er)

C

o(tr)

g

-28-

gd

d(on)

r

- 117 176

d(off)

- 56 112

f

g

S

MOSFET symbol
showing the
integral reverse

SM

SD

rr

rr

RRM

p - n junction diode

VGS = 0 V, ID = 250 μA 500 - - V

Reference to 25 °C, I

= 250 μA

D

VDS = VGS, ID = 250 μA 2 - 4 V

= ± 20 V - - ± 100 nA

GS

VDS = 500 V, VGS = 0 V - - 1

= 400 V, VGS = 0 V, TJ = 125 °C - - 10

V

DS

= 10 V ID = 10 A - 0.2 0.25 

GS

VDS = 50 V, ID = 10 A - 12 - S

VGS = 0 V,

V

= 100 V,

DS

f = 1 MHz

VGS = 0 V,

V

= 0 V to 400 V

DS

V

= 10 V ID = 10 A, VDS = 400 V

GS

= 400 V, ID = 10 A,

V

DD

V

= 10 V, Rg = 9.1 

GS

f = 1 MHz, open drain - 1.8 - 

TJ = 25 °C, IS = 10 A, VGS = 0 V - - 1.2 V

TJ = 25 °C, IF = IS = 10 A,

dI/dt = 100 A/μs, V

while VDS is rising from 0 % to 80 % VDS.

oss

while VDS is rising from 0 % to 80 % VDS.

oss

= 20 V

R

Vishay Siliconix

°C/W

-0.56-

- 3094 -

- 131 -

- 189 -

- 85 170

-2450

-3162

--20

--80

- 437 - ns

-5.9-μC

-25-A

V/°C

μA

pF

nC Gate-Source Charge Qgs -14-

ns

A

S12-0812-Rev. B, 16-Apr-12

THIS DOCUMENT IS SUBJECT TO CHANGE WITHOUT NOTICE. THE PRODUCTS DESCRIBED HEREIN AND THIS DOCUMENT

ARE SUBJECT TO SPECIFIC DISCLAIMERS, SET FORTH AT www.vishay.com/doc?91000

For technical questions, contact: [e-mail]

2

Document Number: 91502

11 V

0

20

40

60

80

VDS, Drain-to-Source Voltage (V)

I

D

, Drain-to-Source Current (A)

0 5 10 15 20 25 30

TJ = 25 °C

TOP 15 V

14 V
13 V
12 V
11 V
10 V

9 V
8 V
7 V
6 V

BOTTOM 5 V

11 V

0

10

20

30

40

VDS, Drain-to-Source Voltage (V)

I

D

, Drain-to-Source Current (A)

0 5 10 15 20 25 30

TJ = 150 °C

TOP 15 V

14 V
13 V
12 V
11 V
10 V

9 V
8 V
7 V
6 V

BOTTOM 5 V

TJ, Junction Temperature (°C)

R

DS(on)

, Drain-to-Source

- 60 - 40 - 20020 40 60 80 100 120

140

160

On Resistance (Normalized)

0

0.5

1

1.5

2

2.5

3

VGS = 10 V

ID = 10 A

ġ

ġ

ġ

ġ

ġ

www.vishay.com

TYPICAL CHARACTERISTICS (25 °C, unless otherwise noted)

IRFP460B, SiHG460B

Vishay Siliconix

Fig. 1 - Typical Output Characteristics

Fig. 2 - Typical Output Characteristics

80

TJ = 25 °C

60

40

TJ = 150 °C

Fig. 4 - Normalized On-Resistance vs. Temperature

10 000

C

10

iss

C

oss

C

rss

V

= 0 V, f = 1 MHz

GS

= Cgs + Cgd, Cds Shorted

C

iss

= C

C

rss

gd

C

= Cds + C

oss

gd

1000

100

Capacitance (pF)

1

0 100 200 300 400 500

VDS, Drain-to-Source Voltage (V)

Fig. 5 - Typical Capacitance vs. Drain-to-Source Voltage

24

VDS = 400 V
V

20

DS

V

DS

16

12

= 250 V
= 100 V

S12-0812-Rev. B, 16-Apr-12

20

, Drain-to-Source Current (A)

D

I

0

Fig. 3 - Typical Transfer Characteristics

THIS DOCUMENT IS SUBJECT TO CHANGE WITHOUT NOTICE. THE PRODUCTS DESCRIBED HEREIN AND THIS DOCUMENT

0 5 10 15 20

VGS, Gate-to-Source Voltage (V)

ARE SUBJECT TO SPECIFIC DISCLAIMERS, SET FORTH AT www.vishay.com/doc?91000

25

3

For technical questions, contact: [e-mail]

8

, Gate-to-Source Voltage (V)

4

GS

V

0

0306090

120

150 180

Qg, Total Gate Charge (nC)

Fig. 6 - Typical Gate Charge vs. Gate-to-Source Voltage

Document Number: 91502