Vishay SiHG20N50C Data Sheet

Power MOSFET

TO-247AC

G

D

S

SiHG20N50C

Vishay Siliconix

PRODUCT SUMMARY

VDS (V) at TJ max. 560

R

(Ω)V

DS(on)

Q

(Max.) (nC) 76

g

Q

(nC) 21

gs

Q

(nC) 34

gd

Configuration Single

= 10 V 0.270

GS

D

FEATURES

• Halogen-free According to IEC 61249-2-21
Definition

• Low Figure-of-Merit R

• 100 % Avalanche Tested

• High Peak Current Capability

• dV/dt Ruggedness

• Improved T

• Improved Gate Charge

• High Power Dissipations Capability

• Compliant to RoHS Directive 2002/95/EC

G

S

N-Channel MOSFET

ORDERING INFORMATION

Package TO-247AC
Lead (Pb)-free SiHG20N50C-E3
Lead (Pb)-free and Halogen-free SiHG20N50C-GE3

rr/Qrr

on

x Q

g

ABSOLUTE MAXIMUM RATINGS (TC = 25 °C, unless otherwise noted)

PARAMETER SYMBOL LIMIT UNIT

Drain-Source Voltage V

Gate-Source Voltage V

T

= 25 °C

Continuous Drain Current (T

Pulsed Drain Current

a

= 150 °C)

J

e

VGS at 10 V

C

= 100 °C 11

C

DS

± 30

GS

I

D

IDM 80

500

20

Linear Derating Factor 1.8 W/°C

Single Pulse Avalanche Energy

b

Maximum Power Dissipation P

Peak Diode Recovery dV/dt

c

Operating Junction and Storage Temperature Range T

Soldering Recommendations (Peak Temperature) for 10 s 300

E

AS

D

361 mJ

250 W

dV/dt 5 V/ns

, T

J

stg

- 55 to + 150

d

Notes

a. Repetitive rating; pulse width limited by maximum junction temperature.
b. V

= 50 V, starting TJ = 25 °C, L = 2.5 mH, Rg = 25 Ω, IAS = 17 A.

DD

c. I

≤ 18 A, dI/dt ≤ 380 A/μs, VDD ≤ VDS, TJ ≤ 150 °C.

SD

d. 1.6 mm from case.
e. Limited by maximum junction temperature.

THERMAL RESISTANCE RATINGS

PARAMETER SYMBOL TYP. MAX. UNIT

Maximum Junction-to-Ambient R

Maximum Junction-to-Case (Drain)

thJA

R

thJC

-40

-0.5

°C/W

V

AT

°C

Document Number: 91382 www.vishay.com
S11-0440-Rev. C, 14-Mar-11 1

THE PRODUCT DESCRIBED HEREIN AND THIS DATASHEET ARE SUBJECT TO SPECIFIC DISCLAIMERS, SET FORTH AT

This datasheet is subject to change without notice.

www.vishay.com/doc?91000

SiHG20N50C

Vishay Siliconix

SPECIFICATIONS (TJ = 25 °C, unless otherwise noted)

PARAMETER SYMBOL TEST CONDITIONS MIN. TYP. MAX. UNIT

Static

Drain-Source Breakdown Voltage V

Temperature Coefficient

V

DS

ΔV

Gate-Source Threshold Voltage (N) V

Gate-Source Leakage I

Zero Gate Voltage Drain Current I

Drain-Source On-State Resistance R

Forward Transconductance g

Dynamic

Input Capacitance C

Output Capacitance C

Reverse Transfer Capacitance C

Total Gate Charge Q

Gate-Drain Charge Q

Turn-On Delay Time t

Rise Time t

Turn-Off Delay Time t

Fall Time t

Gate Input Resistance R

Drain-Source Body Diode Characteristics

Continuous Source-Drain Diode Current I

Pulsed Diode Forward Current I

DS

DS/TJ

GS(th)

V

GSS

DSS

V

DS(on)

fs

iss

- 300 360

oss

-2632

rss

g

-29-

gd

d(on)

r

-32-

d(off)

-44-

f

g

S

MOSFET symbol
showing the
integral reverse

SM

p - n junction diode

VGS = 0 V, ID = 250 μA 500 - - V

Reference to 25 °C, I

= 1 mA

D

-700-

VDS = VGS, ID = 250 μA 3.0 - 5.0 V

= ± 30 V - - ± 100 nA

GS

VDS = 500 V, VGS = 0 V - - 25

V

= 400 V, VGS = 0 V, TJ = 125 °C - - 250

DS

= 10 V ID = 10 A - 0.225 0.270 Ω

GS

VDS = 50 V, ID = 10 A - 6.4 - S

VGS = 0 V,

V

= 25 V,

DS

f = 1.0 MHz

- 2451 2942

-6576

V

= 10 V ID = 18 A, VDS = 400 V

GS

-80-

= 250 V, ID = 18 A,

V

DD

R

= 9.1 Ω

g

-27-

f = 1 MHz, open drain - 1.1 - Ω

D

G

S

--20

--80

mV/°C

μA

pF

nC Gate-Source Charge Qgs -21-

ns

A

Body Diode Voltage V

Body Diode Reverse Recovery Time t

Body Diode Reverse Recovery Charge Q

Reverse Recovery Current I

The information shown here is a preliminary product proposal, not a commercial product datasheet. Vishay Siliconix is not committed to produce this or any similar

product. This information should not be used for design purposes, nor construed as an offer to furnish or sell such products.

SD

rr

rr

RRM

TJ = 25 °C, IS = 18 A, VGS = 0 V - - 1.5 V

-503-ns

TJ = 25 °C, IF = IS,

dI/dt = 100 A/μs, V = 35 V

-6.7-μC

-30-A

www.vishay.com Document Number: 91382
2 S11-0440-Rev. C, 14-Mar-11

This datasheet is subject to change without notice.

THE PRODUCT DESCRIBED HEREIN AND THIS DATASHEET ARE SUBJECT TO SPECIFIC DISCLAIMERS, SET FORTH AT

www.vishay.com/doc?91000

TYPICAL CHARACTERISTICS (25 °C, unless otherwise noted)

VDS, Drain-to-Source Voltage (V)

I

D

, Drain Current (A)

0

10

20

30

40

50

60

70

0612 18

24

30

7.0 V

Bottom

To p

V

GS

15 V
14 V
13 V
12 V
11 V
10 V

9.0 V

8.0 V

7.0 V

6.0 V

5.0 V

TJ = 25 °C

0

10

20

30

40

0 6 12 18 24 30

7.0 V

VDS, Drain-to-Source Voltage (V)

I

D

, Drain Current (A)

Bottom

To p

V

GS

15 V
14 V
13 V
12 V
11 V
10 V

9.0 V

8.0 V

7.0 V

6.0 V

5.0 V

TJ = 150 °C

I

D

, Drain Current (A)

V

GS

,

Gate-to-Source Voltage (V)

0.01

0.1

1

10

100

5678910

TJ= 150 °C

T

J

= 25 °C

SiHG20N50C

Vishay Siliconix

Fig. 1 - Typical Output Characteristics, TC = 25 °C

Fig. 2 - Typical Output Characteristics, T

= 150 °C

C

, Drain-to-Source On Resistance

DS(on)

R

Fig. 3 - Typical Transfer Characteristics

3

ID = 17 A

2.5

2

1.5

(Normalized)

1

0.5

0

- 60 - 40 - 20 0 20 40 60 80 100 120 140 160

T

Junction Temperature (°C)

,

J

V

GS

= 10 V

Fig. 4 - Normalized On-Resistance vs. Temperature

Document Number: 91382 www.vishay.com
S11-0440-Rev. C, 14-Mar-11 3

THE PRODUCT DESCRIBED HEREIN AND THIS DATASHEET ARE SUBJECT TO SPECIFIC DISCLAIMERS, SET FORTH AT

This datasheet is subject to change without notice.

www.vishay.com/doc?91000