Vishay IRFZ48S, IRFZ48L, SiHFZ48S, SiHFZ48L Data Sheet

www.vishay.com

D2PAK (TO-263)

G

D

S

I2PAK (TO-262)

G

D

S

Available

Available

IRFZ48S, IRFZ48L, SiHFZ48S, SiHFZ48L

Vishay Siliconix

Power MOSFET

PRODUCT SUMMARY

VDS (V) 60

R

()V

DS(on)

Q

(Max.) (nC) 110

g

Q

(nC) 29

gs

Q

(nC) 36

gd

Configuration Single

GS

= 10 V 0.018

D

G

S

N-Channel MOSFET

FEATURES

• Advanced process technology

• Surface mount (IRFZ48S, SiHFZ48S)

• Low-profile through-hole (IRFZ48L, SiHFZ48L)

• 175 °C operating temperature

•Fast switching

• Material categorization: for definitions of
compliance please see

www.vishay.com/doc?99912

Note

*

Thi s datasheet pro vi des information about parts that are
RoHS-compliant and / or parts that are non-RoHS-compliant. For
example, parts with lead (Pb) terminations are not RoHS-compliant.
Please see the information / tables in this datasheet for details.





DESCRIPTION

Third generation power MOSFETs from Vishay utilize
advanced processing techniques to achieve extremely low
on-resistance per silicon area. This benefit, combined with
the fast switching speed and ruggedized device design that
Power MOSFETs are well known for, provides the designer
with an extremely efficient and reliable device for use in a
wide variety of applications.
The D2PAK is a surface mount power package capable of
accommodating die sizes up to HEX-4. It provides the
highest power capability and the lowest possible
on-resistance in any existing surface mount package. The
D2PAK is suitable for high current applications because of
its low internal connection resistance and can dissipate up
to 2 W in a typical surface mount application.
The through-hole version (IRFZ48L, SiHFZ48L) is available
for low-profile applications.

ORDERING INFORMATION

Package D2PAK (TO-263) I2PAK (TO-262)

Lead (Pb)-free and halogen-free SiHFZ48S-GE3 SiHFZ48L-GE3

Lead (Pb)-free IRFZ48SPbF -

Note

a. See device orientation.

ABSOLUTE MAXIMUM RATINGS (TC = 25 °C, unless otherwise noted)

PARAMETER SYMBOL LIMIT UNIT

Drain-Source Voltage V
Gate-Source Voltage V

T

= 25 °C

Continuous Drain Current

Pulsed Drain Current

a, e

f

VGS at 10 V

C

= 100 °C 50

C

DS

± 20

GS

I

D

IDM 290

Linear Derating Factor 1.3 W/°C

c, e

b, e

T

= 25 °C

C

T

= 25 °C 3.7

A

Single Pulse Avalanche Energy

Maximum Power Dissipation

Peak Diode Recovery dV/dt
Operating Junction and Storage Temperature Range T
Soldering Recommendations (Peak temperature)

d

for 10 s 300

E

AS

P

D

dV/dt 4.5 V/ns

, T

J

stg

Notes

a. Repetitive rating; pulse width limited by maximum junction temperature (see fig. 11).
b. V

= 25 V, Starting TJ = 25 °C, L = 22 μH, Rg = 25 , IAS = 72 A (see fig. 12).

DD

c. ISD  72 A, dI/dt  200 A/μs, VDD  VDS, TJ  175 °C.
d. 1.6 mm from case.
e. Uses IRFZ48, SiHFZ48 data and test conditions.
f. Calculated continuous current based on maximum allowable junction temperature.

S15-1659-Rev. D, 20-Jul-15

THIS DOCUMENT IS SUBJECT TO CHANGE WITHOUT NOTICE. THE PRODUCTS DESCRIBED HEREIN AND THIS DOCUMENT

ARE SUBJECT TO SPECIFIC DISCLAIMERS, SET FORTH AT www.vishay.com/doc?91000

For technical questions, contact: [e-mail]

1

60

50

100 mJ
190

-55 to +175

Document Number: 90377

V

AT

W

°C

IRFZ48S, IRFZ48L, SiHFZ48S, SiHFZ48L

S

D

G

www.vishay.com

THERMAL RESISTANCE RATINGS

PARAMETER SYMBOL TYP. MAX. UNIT

Maximum Junction-to-Ambient 
(PCB mount)

a

Maximum Junction-to-Case (Drain) R

R

thJA

thJC

-40

-0.8

Note

a. When mounted on 1" square PCB (FR-4 or G-10 material). 

SPECIFICATIONS (TJ = 25 °C, unless otherwise noted)

PARAMETER SYMBOL TEST CONDITIONS MIN. TYP. MAX. UNIT

Static

Drain-Source Breakdown Voltage V

V

Temperature Coefficient VDS/TJ Reference to 25 °C, ID = 1 mA

DS

Gate-Source Threshold Voltage V

Gate-Source Leakage I

Zero Gate Voltage Drain Current I

Drain-Source On-State Resistance R

Forward Transconductance g

DS

GS(th)

V

GSS

DSS

VGS = 10 V ID = 43 A

DS(on)

fs

Dynamic

Input Capacitance C

Reverse Transfer Capacitance C

Total Gate Charge Q

Gate-Drain Charge Q

Turn-On Delay Time t

Rise Time t

Turn-Off Delay Time t

Fall Time t

Internal Source Inductance L

iss

- 1300 -

oss

- 190 -

rss

g

--29

gs

--36

gd

d(on)

r

- 210 -

d(off)

- 250 -

f

S

V

R

Between lead, and center of die contact - 7.5 - nH

Drain-Source Body Diode Characteristics

Continuous Source-Drain Diode Current I

Pulsed Diode Forward Current

a

Body Diode Voltage V

Body Diode Reverse Recovery Time t

Body Diode Reverse Recovery Charge Q

Forward Turn-On Time t

S

I

SM

SD

rr

rr

on

MOSFET symbol
showing the 
integral reverse
p - n junction diode

TJ = 25 °C, IF = 72 A, dI/dt = 100 A/μs

Notes

a. Repetitive rating; pulse width limited by maximum junction temperature (see fig. 11).
b. Pulse width  300 μs; duty cycle  2 %.
c. Uses IRFZ48/SiHFZ48 data and test conditions.
d. Calculated continuous current based on maximum allowable junction temperature.

VGS = 0, ID = 250 μA 60 - - V

c

VDS = VGS, ID = 250 μA 2.0 - 4.0 V

= ± 20 V - - ± 100 nA

GS

VDS = 60 V, VGS = 0 V - - 25

= 48 V, VGS = 0 V, TJ = 150 °C - - 250

V

DS

VDS = 25 V, ID = 43 A

b

b

VGS = 0 V,

V

= 25 V,

DS

f = 1.0 MHz, see fig. 5

= 72 A, VDS = 48 V,

I

= 10 V

GS

V

= 9.1 , RD = 0.34 , see fig. 10

g

D

see fig. 6 and 13

= 30 V, ID = 72 A,

DD

TJ = 25 °C, IS = 72 A, VGS = 0 V

c

b, c

b, c

b

b, c

Intrinsic turn-on time is negligible (turn-on is dominated by LS and LD)

Vishay Siliconix

°C / W

-0.060-V/°C

- - 0.018 

27 - - S

- 2400 -

--110

-8.1-

- 250 -

--50

--290

--2.0V

- 120 180 ns

- 500 800 μC

c

μA

pFOutput Capacitance C

nC Gate-Source Charge Q

ns

A

S15-1659-Rev. D, 20-Jul-15

THIS DOCUMENT IS SUBJECT TO CHANGE WITHOUT NOTICE. THE PRODUCTS DESCRIBED HEREIN AND THIS DOCUMENT

ARE SUBJECT TO SPECIFIC DISCLAIMERS, SET FORTH AT www.vishay.com/doc?91000

For technical questions, contact: [e-mail]

2

Document Number: 90377

IRFZ48S, IRFZ48L, SiHFZ48S, SiHFZ48L

www.vishay.com

TYPICAL CHARACTERISTICS (25 °C, unless otherwise noted)

Vishay Siliconix

Fig. 1 - Typical Output Characteristics

Fig. 2 - Typical Output Characteristics

Fig. 3 - Typical Transfer Characteristics

Fig. 4 - Normalized On-Resistance vs. Temperature

S15-1659-Rev. D, 20-Jul-15

For technical questions, contact: [e-mail]

THIS DOCUMENT IS SUBJECT TO CHANGE WITHOUT NOTICE. THE PRODUCTS DESCRIBED HEREIN AND THIS DOCUMENT

ARE SUBJECT TO SPECIFIC DISCLAIMERS, SET FORTH AT www.vishay.com/doc?91000

3

Document Number: 90377