Vishay IRFZ40, SiHFZ40 Data Sheet
Power MOSFET
TO-220AB
G
D
S
IRFZ40, SiHFZ40
Vishay Siliconix
PRODUCT SUMMARY
VDS (V) 60
R
()V
DS(on)
Q
(Max.) (nC) 67
g
Q
(nC) 18
gs
Q
(nC) 25
gd
Configuration Single
= 10 V 0.028
GS
D
FEATURES
• Dynamic dV/dt Rating
• 175 °C Operating Temperature
•Fast Switching
• Ease of Paralleling
• Simple Drive Requirements
• Compliant to RoHS Directive 2002/95/EC
DESCRIPTION
Third generation Power MOSFETs from Vishay provide the
designer with the best combination of fast switching,
ruggedized device design, low on-resistance and
G
cost-effectiveness.
The TO-220AB package is universially preferred for
commercial-industrial applications at power dissipation
S
N-Channel MOSFET
levels to approximately 50 W. The low thermal resistance
and low package cost of the TO-220AB contribute to its
wide acceptance throughout the industry.
ORDERING INFORMATION
Package TO-220AB
Lead (Pb)-free
SnPb
IRFZ40PbF
SiHFZ40-E3
IRFZ40
SiHFZ40
ABSOLUTE MAXIMUM RATINGS (TC = 25 °C, unless otherwise noted)
PARAMETER SYMBOL LIMIT UNIT
Drain-Source Voltage V
Gate-Source Voltage V
Continuous Drain Current
Pulsed Drain Current
a
e
VGS at 10 V
= 25 °C
T
C
= 100 °C 36
C
DS
± 20
GS
I
D
IDM 200
Linear Derating Factor 1.0 W/°C
Single Pulse Avalanche Energy
Maximum Power Dissipation T
Peak Diode Recovery dV/dt
Operating Junction and Storage Temperature Range T
Soldering Recommendations (Peak Temperature)
b
= 25 °C P
C
c
d
for 10 s 300
E
AS
D
dV/dt 4.5 V/ns
, T
J
stg
Mounting Torque 6-32 or M3 screw
Notes
a. Repetitive rating; pulse width limited by maximum junction temperature (see fig. 11).
b. V
= 25 V, starting TJ = 25 °C, L = 44 μH, Rg = 25 , IAS = 51 A (see fig. 12).
DD
c. I
51 A, dI/dt 250 A/μs, VDD VDS, TJ 175 °C.
SD
d. 1.6 mm from case.
e. Current limited by the package, (die current = 51 A).
* Pb containing terminations are not RoHS compliant, exemptions may apply
Document Number: 91385 www.vishay.com
S11-0520-Rev. B, 21-Mar-11 1
THE PRODUCT DESCRIBED HEREIN AND THIS DATASHEET ARE SUBJECT TO SPECIFIC DISCLAIMERS, SET FORTH AT
This datasheet is subject to change without notice.
60
50
100 mJ
150 W
- 55 to + 175
10 lbf · in
1.1 N · m
www.vishay.com/doc?91000
V
AContinuous Drain Current T
°C
IRFZ40, SiHFZ40
Vishay Siliconix
THERMAL RESISTANCE RATINGS
PARAMETER SYMBOL TYP. MAX. UNIT
Maximum Junction-to-Ambient R
Maximum Junction-to-Case (Drain) R
thJA
thCS
thJC
SPECIFICATIONS (TJ = 25 °C, unless otherwise noted)
PARAMETER SYMBOL TEST CONDITIONS MIN. TYP. MAX. UNIT
Static
Drain-Source Breakdown Voltage V
Temperature Coefficient VDS/TJ Reference to 25 °C, ID = 1 mA - 0.060 - V/°C
V
DS
Gate-Source Threshold Voltage V
Gate-Source Leakage I
Zero Gate Voltage Drain Current I
Drain-Source On-State Resistance R
Forward Transconductance g
Dynamic
Input Capacitance C
Reverse Transfer Capacitance C
Total Gate Charge Q
Gate-Source Charge Q
Gate-Drain Charge Q
Turn-On Delay Time t
Rise Time t
Turn-Off Delay Time t
Fall Time t
Internal Drain Inductance L
Internal Source Inductance L
Drain-Source Body Diode Characteristics
Continuous Source-Drain Diode Current I
Pulsed Diode Forward Current
a
Body Diode Voltage V
Body Diode Reverse Recovery Time t
Body Diode Reverse Recovery Charge Q
Forward Turn-On Time t
Notes
a. Repetitive rating; pulse width limited by maximum junction temperature (see fig. 11).
b. Pulse width 300 μs; duty cycle 2 %.
DS
GS(th)
V
GSS
DSS
VGS = 10 V ID = 31 A
DS(on)
fs
iss
- 920 -
oss
- 170 -
rss
g
--18
gs
--
gd
d(on)
r
-45-
d(off)
-92-
f
D
V
V
GS
R
Between lead,
6 mm (0.25") from
package and center of
S
S
I
SM
SD
rr
rr
on
die contact
MOSFET symbol
showing the
integral reverse
p - n junction diode
TJ = 25 °C, IF = 51 A, dI/dt = 100 A/s
-62
0.50 -
°C/WCase-to-Sink, Flat, Greased Surface R
-1.0
VGS = 0 V, ID = 250 μA 60 - - V
VDS = VGS, ID = 250 μA 2.0 - 4.0 V
= ± 20 V - - ± 100 nA
GS
VDS = 60 V, VGS = 0 V - - 25
= 48 V, VGS = 0 V, TJ = 125 °C - - 250
DS
b
- - 0.028
VDS = 25 V, ID = 31 A 15 - - S
VGS = 0 V,
V
= 25 V,
DS
f = 1.0 MHz, see fig. 5
- 1900 -
--67
= 51 A, VDS = 48 V,
I
= 10 V
D
see fig. 6 and 13
b
25
-14-
V
= 30 V, ID = 51 A,
DD
= 9.1 , RD = 0.55 , see fig. 10
g
G
G
TJ = 25 °C, IS = 51 A, VGS = 0 V
b
D
S
D
S
b
- 110 -
-4.5-
-7.5-
--50
- - 200
--2.5V
- 120 180 ns
- 0.53 0.80 nC
Intrinsic turn-on time is negligible (turn-on is dominated by LS and LD)
μA
pFOutput Capacitance C
nC
ns
nH
A
www.vishay.com Document Number: 91385
2 S11-0520-Rev. B, 21-Mar-11
This datasheet is subject to change without notice.
THE PRODUCT DESCRIBED HEREIN AND THIS DATASHEET ARE SUBJECT TO SPECIFIC DISCLAIMERS, SET FORTH AT
www.vishay.com/doc?91000
TYPICAL CHARACTERISTICS (25 °C, unless otherwise noted)
IRFZ40, SiHFZ40
Vishay Siliconix
Fig. 1 - Typical Output Characteristics, TC = 25 °C
Fig. 2 - Typical Output Characteristics, T
= 175 °C
C
Fig. 1 - Typical Transfer Characteristics
Fig. 2 - Normalized On-Resistance vs. Temperature
Document Number: 91385 www.vishay.com
S11-0520-Rev. B, 21-Mar-11 3
THE PRODUCT DESCRIBED HEREIN AND THIS DATASHEET ARE SUBJECT TO SPECIFIC DISCLAIMERS, SET FORTH AT
This datasheet is subject to change without notice.
www.vishay.com/doc?91000
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