Vishay IRFZ24, SiHFZ24 Data Sheet
www.vishay.com
TO-220AB
G
D
S
IRFZ24, SiHFZ24
Vishay Siliconix
Power MOSFET
PRODUCT SUMMARY
VDS (V) 60
R
()V
DS(on)
Q
max. (nC) 25
g
Q
(nC) 5.8
gs
Q
(nC) 11
gd
Configuration Single
= 10 V 0.10
GS
D
FEATURES
• Dynamic dV/dt rating
• 175 °C operating temperature
• Fast switching
• Ease of paralleling
• Simple drive requirements
• Material categorization: for definitions of compliance
please see www.vishay.com/doc?99912
DESCRIPTION
Third generation power MOSFETs from Vishay provide the
G
designer with the best combination of fast switching,
ruggedized device design, low on-resistance and
cost-effectiveness.
The TO-220AB package is universally preferred for all
S
N-Channel MOSFET
commercial-industrial applications at power dissipation
levels to approximately 50 W. The low thermal resistance
and low package cost of the TO-220AB contribute to its
wide acceptance throughout the industry.
ORDERING INFORMATION
Package TO-220AB
Lead (Pb)-free IRFZ24PbF
ABSOLUTE MAXIMUM RATINGS (TC = 25 °C, unless otherwise noted)
PARAMETER SYMBOL LIMIT UNIT
Drain-Source Voltage V
Gate-Source Voltage V
T
= 25 °C
Continuous Drain Current V
Pulsed Drain Current
a
at 10 V
GS
C
= 100 °C 12
C
DS
± 20
GS
I
D
IDM 68
Linear Derating Factor 0.40 W/°C
Single Pulse Avalanche Energy
Maximum Power Dissipation T
Peak Diode Recovery dV/dt
Operating Junction and Storage Temperature Range T
Soldering Recommendations (Peak temperature)
b
= 25 °C P
c
d
C
for 10 s 300
E
AS
D
dV/dt 4.5 V/ns
, T
J
stg
Mounting Torque 6-32 or M3 screw
Notes
a. Repetitive rating; pulse width limited by maximum junction temperature (see fig. 11).
b. V
= 25 V, starting TJ = 25 °C, L = 403 μH, Rg = 25 , IAS = 17 A (see fig. 12).
DD
c. I
17 A, dI/dt 140 A/μs, VDD VDS, TJ 175 °C.
SD
d. 1.6 mm from case.
60
17
100 mJ
60 W
-55 to +175
10 lbf · in
1.1 N · m
V
AT
°C
S16-0013-Rev. C, 18-Jan-16
1
Document Number: 91406
For technical questions, contact: hvm@vishay.com
THIS DOCUMENT IS SUBJECT TO CHANGE WITHOUT NOTICE. THE PRODUCTS DESCRIBED HEREIN AND THIS DOCUMENT
ARE SUBJECT TO SPECIFIC DISCLAIMERS, SET FORTH AT www.vishay.com/doc?91000
IRFZ24, SiHFZ24
D
S
G
S
D
G
www.vishay.com
THERMAL RESISTANCE RATINGS
PARAMETER SYMBOL TYP. MAX. UNIT
Maximum Junction-to-Ambient R
Maximum Junction-to-Case (Drain) R
thJA
thCS
thJC
-62
0.50 -
-2.5
SPECIFICATIONS (TJ = 25 °C, unless otherwise noted)
PARAMETER SYMBOL TEST CONDITIONS MIN. TYP. MAX. UNIT
Static
Drain-Source Breakdown Voltage V
V
Temperature Coefficient VDS/TJ Reference to 25 °C, ID = 1 mA - 0.061 - V/°C
DS
Gate-Source Threshold Voltage V
Gate-Source Leakage I
Zero Gate Voltage Drain Current I
Drain-Source On-State Resistance R
Forward Transconductance g
DS
GS(th)
V
GSS
DSS
VGS = 10 V ID = 10 A
DS(on)
fs
Dynamic
Input Capacitance C
Reverse Transfer Capacitance C
Total Gate Charge Q
Gate-Drain Charge Q
Turn-On Delay Time t
Rise Time t
Turn-Off Delay Time t
Fall Time t
Internal Drain Inductance L
iss
- 360 -
oss
-79-
rss
g
--5.8
gs
--11
gd
d(on)
r
-25-
d(off)
-42-
f
D
Between lead,
6 mm (0.25") from
package and center of
Internal Source Inductance L
S
die contact
Drain-Source Body Diode Characteristics
Continuous Source-Drain Diode Current I
Pulsed Diode Forward Current
a
Body Diode Voltage V
Body Diode Reverse Recovery Time t
Body Diode Reverse Recovery Charge Q
Forward Turn-On Time t
S
I
SM
SD
rr
rr
on
MOSFET symbol
showing the
integral reverse
p - n junction diode
Notes
a. Repetitive rating; pulse width limited by maximum junction temperature (see fig. 11).
b. Pulse width 300 μs; duty cycle 2 %.
VGS = 0 V, ID = 250 μA 60 - - V
VDS = VGS, ID = 250 μA 2.0 - 4.0 V
= ± 20 V - - ± 100 nA
GS
VDS = 60 V, VGS = 0 V - - 25
= 48 V, VGS = 0 V, TJ = 150 °C - - 250
V
DS
b
VDS = 25 V, ID = 10 A 5.5 - - S
VGS = 0 V,
V
= 25 V,
DS
f = 1.0 MHz, see fig. 5
= 17 A, VDS = 48 V,
I
= 10 V
V
GS
V
R
= 18 , RD = 1.7 , see fig. 10
g
TJ = 25 °C, IS = 17 A, VGS = 0 V
D
see fig. 6 and 13
= 30 V, ID = 17 A,
DD
b
b
b
TJ = 25 °C, IF = 17 A, dI/dt = 100 A/s
Intrinsic turn-on time is negligible (turn-on is dominated by LS and LD)
Vishay Siliconix
°C/WCase-to-Sink, Flat, Greased Surface R
- - 0.10
- 640 -
--25
-13-
-58-
-4.5-
-7.5-
--17
--68
--1.5V
- 88 180 ns
-0.290.64μC
μA
pFOutput Capacitance C
nC Gate-Source Charge Q
ns
nH
A
THIS DOCUMENT IS SUBJECT TO CHANGE WITHOUT NOTICE. THE PRODUCTS DESCRIBED HEREIN AND THIS DOCUMENT
ARE SUBJECT TO SPECIFIC DISCLAIMERS, SET FORTH AT www.vishay.com/doc?91000
For technical questions, contact: hvm@vishay.com
S16-0013-Rev. C, 18-Jan-16
2
Document Number: 91406
www.vishay.com
TYPICAL CHARACTERISTICS (25 °C, unless otherwise noted)
IRFZ24, SiHFZ24
Vishay Siliconix
Fig. 1 - Typical Output Characteristics, TC = 25 °C
Fig. 2 - Typical Output Characteristics, T
= 175 °C
C
Fig. 4 - Normalized On-Resistance vs. Temperature
Fig. 5 - Typical Capacitance vs. Drain-to-Source Voltage
Fig. 3 - Typical Transfer Characteristics
S16-0013-Rev. C, 18-Jan-16
For technical questions, contact: hvm@vishay.com
THIS DOCUMENT IS SUBJECT TO CHANGE WITHOUT NOTICE. THE PRODUCTS DESCRIBED HEREIN AND THIS DOCUMENT
ARE SUBJECT TO SPECIFIC DISCLAIMERS, SET FORTH AT www.vishay.com/doc?91000
Fig. 6 - Typical Gate Charge vs. Gate-to-Source Voltage
3
Document Number: 91406
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