Vishay IRFZ14, SiHFZ14 Data Sheet
TO-220AB
G
D
S
Available
RoHS*
COMPLIANT
Power MOSFET
IRFZ14, SiHFZ14
Vishay Siliconix
PRODUCT SUMMARY
VDS (V) 60
R
()V
DS(on)
Q
(Max.) (nC) 11
g
Q
(nC) 3.1
gs
Q
(nC) 5.8
gd
Configuration Single
= 10 V 0.20
GS
D
FEATURES
• Dynamic dV/dt Rating
• 175 °C Operating Temperature
•Fast Switching
• Ease of Paralleling
• Simple Drive Requirements
• Compliant to RoHS Directive 2002/95/EC
DESCRIPTION
Third generation Power MOSFETs from Vishay provide the
designer with the best combination of fast switching,
ruggedized device design, low on-resistance and
G
cost-effectiveness.
The TO-220AB package is universally preferred for all
commercial-industrial applications at power dissipation
S
N-Channel MOSFET
levels to approximately 50 W. The low thermal resistance
and low package cost of the TO-220AB contribute to its
wide acceptance throughout the industry.
ORDERING INFORMATION
Package TO-220AB
Lead (Pb)-free
SnPb
IRFZ14PbF
SiHFZ14-E3
IRFZ14
SiHFZ14
ABSOLUTE MAXIMUM RATINGS (TC = 25 °C, unless otherwise noted)
PARAMETER SYMBOL LIMIT UNIT
Drain-Source Voltage
Gate-Source Voltage
Continuous Drain Current V
Pulsed Drain Current
f
f
T
= 25 °C
at 10 V
GS
a
C
T
= 100 °C 7.2
C
Linear Derating Factor 0.29 W/°C
Single Pulse Avalanche Energy
Maximum Power Dissipation T
Peak Diode Recovery dV/dt
b
= 25 °C P
c
C
Operating Junction and Storage Temperature Range T
Soldering Recommendations (Peak Temperature) for 10 s 300
Mounting Torque 6-32 or M3 screw
Notes
a. Repetitive rating; pulse width limited by maximum junction temperature (see fig. 11).
b. V
= 25 V; starting TJ = 25 °C, L = 1.47 mH, Rg = 25 , IAS = 8 A (see fig. 12).
DD
10 A, dI/dt 90 A/μs, VDD VDS, TJ 175 °C.
c. I
SD
d. 1.6 mm from case.
* Pb containing terminations are not RoHS compliant, exemptions may apply
Document Number: 91289 www.vishay.com
S11-0517-Rev. C, 21-Mar-11 1
THE PRODUCT DESCRIBED HEREIN AND THIS DATASHEET ARE SUBJECT TO SPECIFIC DISCLAIMERS, SET FORTH AT
This datasheet is subject to change without notice.
V
DS
VGS ± 20
I
D
60
10
V
A
IDM 40
E
AS
D
47 mJ
43 W
dV/dt 4.5 V/ns
, T
J
stg
- 55 to + 175
d
°C
10 lbf · in
1.1 N · m
www.vishay.com/doc?91000
IRFZ14, SiHFZ14
Vishay Siliconix
THERMAL RESISTANCE RATINGS
PARAMETER SYMBOL TYP. MAX. UNIT
Maximum Junction-to-Ambient R
Case-to-Sink, Flat, Greased Surface
Maximum Junction-to-Case (Drain)
thJA
R
thCS
R
thJC
SPECIFICATIONS (TJ = 25 °C, unless otherwise noted)
PARAMETER SYMBOL TEST CONDITIONS MIN. TYP. MAX. UNIT
Static
Drain-Source Breakdown Voltage V
V
Temperature Coefficient VDS/TJ Reference to 25 °C, ID = 1 mA - 0.063 - V/°C
DS
Gate-Source Threshold Voltage V
Gate-Source Leakage I
Zero Gate Voltage Drain Current I
Drain-Source On-State Resistance R
Forward Transconductance g
Dynamic
Input Capacitance C
Reverse Transfer Capacitance C
Total Gate Charge Q
Gate-Drain Charge Q
Turn-On Delay Time t
Rise Time t
Turn-Off Delay Time t
Fall Time t
Internal Drain Inductance L
Internal Source Inductance L
Drain-Source Body Diode Characteristics
Continuous Source-Drain Diode Current I
Pulsed Diode Forward Current
a
Body Diode Voltage V
Body Diode Reverse Recovery Time t
Body Diode Reverse Recovery Charge Q
Forward Turn-On Time t
Notes
a. Repetitive rating; pulse width limited by maximum junction temperature (see fig. 11).
b. Pulse width 300 μs; duty cycle 2 %.
DS
GS(th)
V
GSS
DSS
VGS = 10 V ID = 6.0 A
DS(on)
fs
iss
- 160 -
oss
-29-
rss
g
--3.1
gs
--5.8
gd
d(on)
r
-13-
d(off)
-19-
f
D
V
V
GS
Between lead,
6 mm (0.25") from
package and center of
S
S
I
SM
SD
rr
rr
on
die contact
MOSFET symbol
showing the
integral reverse
p - n junction diode
TJ = 25 °C, IF = 10 A, dI/dt = 100 A/μs
-62
0.50 -
°C/W
-3.5
VGS = 0 V, ID = 250 μA 60 - - V
VDS = VGS, ID = 250 μA 2.0 - 4.0 V
= ± 20 V - - ± 100 nA
GS
VDS = 60 V, VGS = 0 V - - 25
= 48 V, VGS = 0 V, TJ = 150 °C - - 250
DS
VDS = 25 V, ID = 6.0 A
VGS = 0 V,
V
= 25 V,
DS
f = 1.0 MHz, see fig. 5
b
b
- - 0.20
2.4 - - S
- 300 -
--11
= 10 A, VDS = 48 V,
I
= 10 V
D
see fig. 6 and 13
b
-10-
= 30 V, ID = 10 A,
V
DD
R
= 24 , RD = 2.7 ,
g
see fig. 10
b
G
G
TJ = 25 °C, IS = 10 A, VGS = 0 V
D
S
D
S
b
-50-
-4.5-
-7.5-
--10
--40
--1.6V
- 70 140 ns
b
- 0.20 0.40 μC
Intrinsic turn-on time is negligible (turn-on is dominated by LS and LD)
μA
pFOutput Capacitance C
nC Gate-Source Charge Q
ns
nH
A
www.vishay.com Document Number: 91289
2 S11-0517-Rev. C, 21-Mar-11
This datasheet is subject to change without notice.
THE PRODUCT DESCRIBED HEREIN AND THIS DATASHEET ARE SUBJECT TO SPECIFIC DISCLAIMERS, SET FORTH AT
www.vishay.com/doc?91000
TYPICAL CHARACTERISTICS (25 °C, unless otherwise noted)
IRFZ14, SiHFZ14
Vishay Siliconix
Fig. 1 - Typical Output Characteristics, TC = 25 °C
Fig. 2 - Typical Output Characteristics, T
= 175 °C
C
Fig. 3 - Typical Transfer Characteristics
Fig. 4 - Normalized On-Resistance vs. Temperature
Document Number: 91289 www.vishay.com
S11-0517-Rev. C, 21-Mar-11 3
THE PRODUCT DESCRIBED HEREIN AND THIS DATASHEET ARE SUBJECT TO SPECIFIC DISCLAIMERS, SET FORTH AT
This datasheet is subject to change without notice.
www.vishay.com/doc?91000
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