Vishay IRFZ10, SiHFZ10 Data Sheet

Power MOSFET

TO-220AB

G

D

S

Available

RoHS*

COMPLIANT

IRFZ10, SiHFZ10

Vishay Siliconix

PRODUCT SUMMARY

VDS (V) 60

R

()V

DS(on)

Q

(Max.) (nC) 11

g

Q

(nC) 3.1

gs

Q

(nC) 5.8

gd

Configuration Single

= 10 V 0.20

GS

D

FEATURES

• Dynamic dV/dt Rating

• 175 °C Operating Temperature

•Fast Switching

• Ease of Paralleling

• Simple Drive Requirements

• Compliant to RoHS Directive 2002/95/EC

DESCRIPTION

Third Generation Power MOSFETs from Vishay provides the
designer with the best combination of fast switching,
ruggedized device design, low on-resistance and cost

G

effectiveness.
The TO-220AB package is universally preferred for all
commercial-industrial applications at power dissipation

S

N-Channel MOSFET

levels to approximately 50 W. The low thermal resistance
and low package cost of the TO-220AB contribute to its
wide acceptance throughout the industry.

ORDERING INFORMATION

Package TO-220AB

Lead (Pb)-free

SnPb

IRFZ10PbF

SiHFZ10-E3

IRFZ10

SiHFZ10

ABSOLUTE MAXIMUM RATINGS (TC = 25 °C, unless otherwise noted)

PARAMETER SYMBOL LIMIT UNIT

Drain-Source Voltage V

Gate-Source Voltage V

Continuous Drain Current

Pulsed Drain Current

a

VGS at 10 V

TC = 25 °C

= 100 °C 7.2

C

Linear Derating Factor 0.29 W/°C

Single Pulse Avalanche Energy

Maximum Power Dissipation T

Peak Diode Recovery dV/dt

b

= 25 °C P

C

c

Operating Junction and Storage Temperature Range T

Soldering Recommendations (Peak Temperature) for 10 s 300

Mounting Torque 6-32 or M3 screw

Notes

a. Repetitive rating; pulse width limited by maximum junction temperature (see fig. 11).
b. V

= 25 V, starting TJ = 25 °C, L = 1.8 mH, Rg = 25 , IAS = 7.2 A (see fig. 12).

DD

c. I

10 A, dI/dt 90 A/s, VDD VDS, TJ 175 °C.

SD

d. 1.6 mm from case.

* Pb containing terminations are not RoHS compliant, exemptions may apply

Document Number: 90363 www.vishay.com
S11-0511-Rev. C, 21-Mar-11 1

THE PRODUCT DESCRIBED HEREIN AND THIS DATASHEET ARE SUBJECT TO SPECIFIC DISCLAIMERS, SET FORTH AT

This datasheet is subject to change without notice.

60

DS

± 20

GS

I

D

10

V

AT

IDM 40

E

AS

D

47 mJ

43 W

dV/dt 4.5 V/ns

, T

J

stg

- 55 to + 175

d

°C

10 lbf · in

1.1 N · m

www.vishay.com/doc?91000

IRFZ10, SiHFZ10

S

D

G

Vishay Siliconix

THERMAL RESISTANCE RATINGS

PARAMETER SYMBOL TYP. MAX. UNIT

Maximum Junction-to-Ambient R

Maximum Junction-to-Case (Drain) R

thJA

thCS

thJC

SPECIFICATIONS (TJ = 25 °C, unless otherwise noted)

PARAMETER SYMBOL TEST CONDITIONS MIN. TYP. MAX. UNIT

Static

Drain-Source Breakdown Voltage V

Temperature Coefficient VDS/TJ Reference to 25 °C, ID = 1 mA - 0.063 -

V

DS

Gate-Source Threshold Voltage V

Gate-Source Leakage I

Zero Gate Voltage Drain Current I

Drain-Source On-State Resistance R

Forward Transconductance g

Dynamic

Input Capacitance C

Reverse Transfer Capacitance C

Total Gate Charge Q

Gate-Drain Charge Q

Turn-On Delay Time t

Rise Time t

Turn-Off Delay Time t

Fall Time t

Internal Drain Inductance L

Internal Source Inductance L

Drain-Source Body Diode Characteristics

Continuous Source-Drain Diode Current I

Pulsed Diode Forward Current

a

Body Diode Voltage V

Body Diode Reverse Recovery Time t

Body Diode Reverse Recovery Charge Q

Forward Turn-On Time t

Notes

a. Repetitive rating; pulse width limited by maximum junction temperature (see fig. 11).
b. Pulse width  300 μs; duty cycle  2 %.

DS

GS(th)

V

GSS

DSS

V

DS(on)

fs

iss

- 160 -

oss

-29-

rss

g

--3.1

gs

--5.8

gd

d(on)

r

-13-

d(off)

-19-

f

D

Between lead,
6 mm (0.25") from
package and center of

S

S

I

SM

SD

rr

rr

on

die contact

MOSFET symbol
showing the
integral reverse

p - n junction diode

TJ = 25 °C, IF = 10 A, di/dt = 100 A/μs

-62

0.50 -

°C/WCase-to-Sink, Flat, Greased Surface R

-3.5

VGS = 0 V, ID = 250 μA 60 - -

VDS = VGS, ID = 250 μA 2.0 -

= 20 - -

GS

VDS = 60 V, VGS = 0 V - -

= 48 V, VGS = 0 V, TJ = 150 °C - -

V

DS

= 10 V ID = 6.0 A

GS

VDS = 25 V, ID = 6.0 A

VGS = 0 V

= 25 V

V

DS

b

b

--0.20

2.4 - -

- 300 -

4.0 V

100 nA

25

250

f = 1.0 MHz, see fig. 5

--11

V

GS

= 10 V

ID = 10 A, VDS = 48 V,

see fig. 6 and 13

b

-10-

V

= 30 V, ID = 10 A

DD

R

= 24 , RD = 2.7, see fig. 10

g

G

b

D

S

-50-

-4.5-

-7.5-

--10

--40

TJ = 25 °C, IS = 10 A, VGS = 0 V

b

--

-

b

-

1.6 V

70 140 ns

0.20 0.40 μC

Intrinsic turn-on time is negligible (turn-on is dominated by LS and LD)

V

V/°C

μA



S

pFOutput Capacitance C

nC Gate-Source Charge Q

ns

nH

A

www.vishay.com Document Number: 90363
2 S11-0511-Rev. C, 21-Mar-11

THE PRODUCT DESCRIBED HEREIN AND THIS DATASHEET ARE SUBJECT TO SPECIFIC DISCLAIMERS, SET FORTH AT

This datasheet is subject to change without notice.

www.vishay.com/doc?91000

TYPICAL CHARACTERISTICS (25 °C, unless otherwise noted)

IRFZ10, SiHFZ10

Vishay Siliconix

Fig. 1 - Typical Output Characteristics, TC = 25 °C

Fig. 2 - Typical Output Characteristics, T

= 175 °C

C

Fig. 3 - Typical Transfer Characteristics

Fig. 4 - Normalized On-Resistance vs. Temperature

Document Number: 90363 www.vishay.com
S11-0511-Rev. C, 21-Mar-11 3

THE PRODUCT DESCRIBED HEREIN AND THIS DATASHEET ARE SUBJECT TO SPECIFIC DISCLAIMERS, SET FORTH AT

This datasheet is subject to change without notice.

www.vishay.com/doc?91000