Vishay IRFR310, IRFU310, SiHFR310, SiHFU310 Data Sheet
www.vishay.com
IRFR310, IRFU310, SiHFR310, SiHFU310
Vishay Siliconix
Power MOSFET
PRODUCT SUMMARY
VDS (V) 400
R
()V
DS(on)
(Max.) (nC) 12
Q
g
Q
(nC) 1.9
gs
(nC) 6.5
Q
gd
Configuration Single
DPAK
(TO-252)
D
IPAK
(TO-251)
D
= 10 V 3.6
GS
G
D
FEATURES
• Dynamic dV/dt Rating
• Repetitive Avalanche Rated
• Surface Mount (IRFR310, SiHFR310)
• Straight Lead (IRFU310, SiHFU310)
• Available in Tape and Reel
• Fast Switching
• Fully Avalanche Rated
• Material categorization: For definitions of
compliance please see www.vishay.com/doc?99912
DESCRIPTION
Third generation power MOSFETs form Vishay provide the
designer with the best combination of fast switching,
ruggedized device design, low on-resistance and
cost-effectiveness.
S
G
S
D
G
S
N-Channel MOSFET
The DPAK is designed for surface mounting using vapor
phase, infrared, or wave soldering techniques. The straight
lead version (IRFU, SiHFU series) is for through-hole
mounting applications. Power dissipation levels up to 1.5 W
are possible in typical surface mount applications.
ORDERING INFORMATION
Package DPAK (TO-252) DPAK (TO-252) DPAK (TO-252) DPAK (TO-252) IPAK (TO-251)
Lead (Pb)-free and Halogen-free SiHFR310-GE3 SiHFR310TRL-GE3 SiHFR310TR-GE3 SiHFR310TRR-GE3 SiHFU310-GE3
Lead (Pb)-free
IRFR310PbF IRFR310TRLPbF
SiHFR310-E3 SiHFR310TL-E3
a
IRFR310TRPbF
a
SiHFR310T-E3
a
IRFR310TRRPbF
a
SiHFR310TR-E3
a
a
IRFU310PbF
SiHFU310-E3
Note
a. See device orientation.
ABSOLUTE MAXIMUM RATINGS (TC = 25 °C, unless otherwise noted)
PARAMETER SYMBOL LIMIT UNIT
Drain-Source Voltage V
Gate-Source Voltage V
T
= 25 °C
Continuous Drain Current V
Pulsed Drain Current
a
at 10 V
GS
C
T
= 100 °C 1.1
C
DS
± 20
GS
I
D
IDM 6.0
Linear Derating Factor 0.20
Linear Derating Factor (PCB Mount)
Single Pulse Avalanche Energy
Repetitive Avalanche Current
Repetitive Avalanche Energy
Maximum Power Dissipation T
Maximum Power Dissipation (PCB Mount)
Peak Diode Recovery dV/dt
Operating Junction and Storage Temperature Range T
Soldering Recommendations (Peak Temperature)
e
b
a
a
= 25 °C
e
c
d
C
TA = 25 °C 2.5
for 10 s 260
E
AS
I
AR
E
AR
P
D
dV/dt 4.0 V/ns
, T
J
stg
Notes
a. Repetitive rating; pulse width limited by maximum junction temperature (see fig. 11).
b. V
= 50 V, starting TJ = 25 °C, L = 52 mH, Rg = 25 , IAS = 1.7 A (see fig. 12).
DD
1.7 A, dI/dt 40 A/μs, VDD VDS, TJ 150 °C.
c. I
SD
d. 1.6 mm from case.
e. When mounted on 1” square PCB (FR-4 or G-10 material).
400
1.7
0.020
86 mJ
1.7 A
2.5 mJ
25
- 55 to + 150
V
A
W/°C
W
°C
S13-0165-Rev. D, 04-Feb-13
1
Document Number: 91272
For technical questions, contact: hvm@vishay.com
THIS DOCUMENT IS SUBJECT TO CHANGE WITHOUT NOTICE. THE PRODUCTS DESCRIBED HEREIN AND THIS DOCUMENT
ARE SUBJECT TO SPECIFIC DISCLAIMERS, SET FORTH AT www.vishay.com/doc?91000
IRFR310, IRFU310, SiHFR310, SiHFU310
D
S
G
S
D
G
www.vishay.com
THERMAL RESISTANCE RATINGS
PARAMETER SYMBOL TYP. MAX. UNIT
Maximum Junction-to-Ambient
(PCB Mounted, steady-state)
a
Maximum Junction-to-Ambient R
Maximum Junction-to-Case R
R
thJA
thJA
thJC
-50
- 110
-5.0
Note
a. When mounted on 1" square PCB ( FR-4 or G-10 material).
SPECIFICATIONS (TJ = 25 °C, unless otherwise noted)
PARAMETER SYMBOL TEST CONDITIONS MIN. TYP. MAX. UNIT
Static
Drain-Source Breakdown Voltage V
V
Temperature Coefficient VDS/TJ Reference to 25 °C, ID = 1 mA - 0.47 - V/°C
DS
Gate-Source Threshold Voltage V
Gate-Source Leakage I
Zero Gate Voltage Drain Current I
Drain-Source On-State Resistance R
Forward Transconductance g
DS
GS(th)
V
GSS
DSS
VGS = 10 V ID = 1.0 A
DS(on)
fs
Dynamic
Input Capacitance C
Reverse Transfer Capacitance C
Total Gate Charge Q
Gate-Drain Charge Q
Turn-On Delay Time t
Rise Time t
Turn-Off Delay Time t
Fall Time t
Internal Drain Inductance L
Internal Source Inductance L
iss
-34-
oss
-6.3-
rss
g
--1.9
gs
--6.5
gd
d(on)
r
-21-
d(off)
-11-
f
D
V
Between lead,
6 mm (0.25") from
package and center of
S
die contact
Drain-Source Body Diode Characteristics
Continuous Source-Drain Diode Current I
Pulsed Diode Forward Current
a
Body Diode Voltage V
Body Diode Reverse Recovery Time t
Body Diode Reverse Recovery Charge Q
Forward Turn-On Time t
S
I
SM
SD
rr
rr
on
MOSFET symbol
showing the
integral reverse
p - n junction diode
TJ = 25 °C, IF = 2.0 A, dI/dt = 100 A/μs
Notes
a. Repetitive rating; pulse width limited by maximum junction temperature (see fig. 11).
b. Pulse width 300 μs; duty cycle 2 %.
VGS = 0 V, ID = 250 μA 400 - - V
VDS = VGS, ID = 250 μA 2.0 - 4.0 V
= ± 20 V - - ± 100 nA
GS
VDS = 400 V, VGS = 0 V - - 25
V
= 320 V, VGS = 0 V, TJ = 125 °C - - 250
DS
b
VDS = 50 V, ID = 1.0 A
b
VGS = 0 V,
V
= 25 V,
DS
f = 1.0 MHz, see fig. 5
= 2.0 A, VDS = 320 V,
I
= 10 V
GS
V
D
see fig. 6 and 13
= 200 V, ID = 2.0 A,
DD
R
= 24 , RD = 95 ,
g
see fig. 10
TJ = 25 °C, IS = 1.7 A, VGS = 0 V
b, c
c
b, c
b
b
Intrinsic turn-on time is negligible (turn-on is dominated by LS and LD)
Vishay Siliconix
°C/W
--3.6
0.97 - - S
- 170 -
--12
-7.9-
-9.9-
-4.5-
-7.5-
--1.7
--6.0
--1.6V
- 240 540 ns
- 0.85 1.6 μC
μA
pFOutput Capacitance C
nC Gate-Source Charge Q
ns
nH
A
THIS DOCUMENT IS SUBJECT TO CHANGE WITHOUT NOTICE. THE PRODUCTS DESCRIBED HEREIN AND THIS DOCUMENT
ARE SUBJECT TO SPECIFIC DISCLAIMERS, SET FORTH AT www.vishay.com/doc?91000
For technical questions, contact: hvm@vishay.com
S13-0165-Rev. D, 04-Feb-13
2
Document Number: 91272
IRFR310, IRFU310, SiHFR310, SiHFU310
www.vishay.com
TYPICAL CHARACTERISTICS (25 °C, unless otherwise noted)
Vishay Siliconix
Fig. 1 - Typical Output Characteristics, TC = 25 °C
Fig. 2 - Typical Output Characteristics, T
= 150 °C
C
Fig. 3 - Typical Transfer Characteristics
Fig. 4 - Normalized On-Resistance vs. Temperature
S13-0165-Rev. D, 04-Feb-13
For technical questions, contact: hvm@vishay.com
THIS DOCUMENT IS SUBJECT TO CHANGE WITHOUT NOTICE. THE PRODUCTS DESCRIBED HEREIN AND THIS DOCUMENT
ARE SUBJECT TO SPECIFIC DISCLAIMERS, SET FORTH AT www.vishay.com/doc?91000
3
Document Number: 91272
www.vishay.com
IRFR310, IRFU310, SiHFR310, SiHFU310
Vishay Siliconix
Fig. 5 - Typical Capacitance vs. Drain-to-Source Voltage
Fig. 6 - Typical Gate Charge vs. Gate-to-Source Voltage
Fig. 7 - Typical Source-Drain Diode Forward Voltage
Fig. 8 - Maximum Safe Operating Area
S13-0165-Rev. D, 04-Feb-13
For technical questions, contact: hvm@vishay.com
THIS DOCUMENT IS SUBJECT TO CHANGE WITHOUT NOTICE. THE PRODUCTS DESCRIBED HEREIN AND THIS DOCUMENT
ARE SUBJECT TO SPECIFIC DISCLAIMERS, SET FORTH AT www.vishay.com/doc?91000
4
Document Number: 91272
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