Vishay IRFU110, SiHFU110 Data Sheet

Power MOSFET

IRFU110, SiHFU110

Vishay Siliconix

PRODUCT SUMMARY

VDS (V) 100

()V

R

DS(on)

Q

(Max.) (nC) 8.3

g

Q

(nC) 2.3

gs

Q

(nC) 3.8

gd

Configuration Single

IPAK

(TO-251)

D

= 10 V 0.54

GS

D

FEATURES

• Halogen-free According to IEC 61249-2-21
Definition

• Straight Lead

• Available in Tape and Reel

• Dynamic dV/dt Rating

• Repetitive Avalanche Rated

•Fast Switching

• Ease of Paralleling

• Simple Drive Requirements

• Compliant to RoHS Directive 2002/95/EC

DESCRIPTION

Third generation Power MOSFETs from Vishay provide the

G

designer with the best combination of fast switching,
ruggedized device design, low on-resistance and

S

D

G

S

N-Channel MOSFET

cost-effectiveness.

ORDERING INFORMATION

Package

Lead (Pb)-free and Halogen-free SiHFU110-GE3

Lead (Pb)-free

SnPb

IPAK (TO-251)

IRFU110PbF

SiHFU110-E3

IRFU110

SiHFU110

ABSOLUTE MAXIMUM RATINGS (TC = 25 °C, unless otherwise noted)

PARAMETER SYMBOL LIMIT UNIT

Drain-Source Voltage V

Gate-Source Voltage V

T

= 25 °C

Continuous Drain Current V

Pulsed Drain Current

a

at 10 V

GS

C

= 100 °C 2.7

C

DS

± 20

GS

I

D

IDM 17

Linear Derating Factor 0.2 W/°C

Single Pulse Avalanche Energy

Repetitive Avalanche Current

Repetitive Avalanche Energy

Maximum Power Dissipation T

Peak Diode Recovery dV/dt

Operating Junction and Storage Temperature Range T

b

a

a

= 25 °C P

c

C

E

AS

I

AR

E

AR

D

dV/dt 5.5 V/ns

, T

J

stg

Soldering Recommendations (Peak Temperature) for 10 s 300

Notes

a. Repetitive rating; pulse width limited by maximum junction temperature (see fig. 11).

= 25 V, starting TJ = 25 °C, L = 8.1 mH, Rg = 25 , IAS = 4.3 A (see fig. 12).

b. V

DD

c. I

 5.6 A, dI/dt  75 A/μs, VDD  VDS, TJ  150 °C.

SD

d. 1.6 mm from case.

* Pb containing terminations are not RoHS compliant, exemptions may apply

Document Number: 91397 www.vishay.com
S10-2549-Rev. C, 08-Nov-10 1

100

4.3

75 mJ

4.3 A

2.5 mJ

25 W

- 55 to + 150

d

V

AT

°C

IRFU110, SiHFU110

D

G

Vishay Siliconix

THERMAL RESISTANCE RATINGS

PARAMETER SYMBOL MIN. TYP. MAX. UNIT

Maximum Junction-to-Ambient R

Maximum Junction-to-Case (Drain) R

thJA

thJC

SPECIFICATIONS (TJ = 25 °C, unless otherwise noted)

PARAMETER SYMBOL TEST CONDITIONS MIN. TYP. MAX. UNIT

Static

Drain-Source Breakdown Voltage V

V

Temperature Coefficient VDS/TJ Reference to 25 °C, ID = 1 mA - 0.63 - V/°C

DS

Gate-Source Threshold Voltage V

Gate-Source Leakage I

Zero Gate Voltage Drain Current I

Drain-Source On-State Resistance R

Forward Transconductance g

Dynamic

Input Capacitance C

Reverse Transfer Capacitance C

Total Gate Charge Q

Gate-Drain Charge Q

Turn-On Delay Time t

Rise Time t

Turn-Off Delay Time t

Fall Time t

Internal Drain Inductance L

Internal Source Inductance L

Drain-Source Body Diode Characteristics

Continuous Source-Drain Diode Current I

Pulsed Diode Forward Current

a

Body Diode Voltage V

Body Diode Reverse Recovery Time t

Body Diode Reverse Recovery Charge Q

Forward Turn-On Time t

Notes

a. Repetitive rating; pulse width limited by maximum junction temperature (see fig. 11).
b. Pulse width  300 μs; duty cycle  2 %.

DS

GS(th)

V

GSS

DSS

VGS = 10 V ID = 0.90 A

DS(on)

fs

iss

-81-

oss

-15-

rss

g

--2.3

gs

--3.8

gd

d(on)

r

-15-

d(off)

-9.4-

f

D

S

S

I

SM

SD

rr

rr

on

- - 110

--5.0

VGS = 0 V, ID = 250 μA 100 - - V

VDS = VGS, ID = 250 μA 2.0 - 4.0 V

= ± 20 V - - ± 100 nA

GS

VDS = 100 V, VGS = 0 V - - 25

V

= 80 V, VGS = 0 V, TJ = 125 °C - - 250

DS

b

- - 0.54 

VDS = 50 V, ID = 0.90 A 1.1 - - S

VGS = 0 V,

V

= 25 V,

DS

f = 1.0 MHz, see fig. 5

- 180 -

--8.3

= 5.6 A, VDS = 80 V,

I

V

GS

= 10 V

D

see fig. 6 and 13

b

-6.9-

= 50 V, ID = 5.6 A,

V

DD

R

= 24 , RD = 8.4 , see fig. 10

g

Between lead,
6 mm (0.25") from
package and center of
die contact

MOSFET symbol
showing the

integral reverse

G

p - n junction diode

TJ = 25 °C, IS = 1.5 A, VGS = 0 V

b

TJ = 25 °C, IF = 5.6 A, dI/dt = 100 A/μs

b

D

S

-16-

-4.0-

-6.0-

--1.5

--12

--2.5V

- 100 200 ns

b

- 0.44 0.88 μC

Intrinsic turn-on time is negligible (turn-on is dominated by LS and LD)

°C/W

μA

pFOutput Capacitance C

nC Gate-Source Charge Q

ns

nH

A

www.vishay.com Document Number: 91397
2 S10-2549-Rev. C, 08-Nov-10

TYPICAL CHARACTERISTICS (25 °C, unless otherwise noted)

IRFU110, SiHFU110

Vishay Siliconix

Fig. 1 - Typical Output Characteristics, TC = 25 °C

Fig. 2 - Typical Output Characteristics, T

= 150 °C

C

Fig. 3 - Typical Transfer Characteristics

Fig. 4 - Normalized On-Resistance vs. Temperature

Document Number: 91397 www.vishay.com
S10-2549-Rev. C, 08-Nov-10 3