Vishay IRFSL9N60A, SiHFSL9N60A Data Sheet
N-Channel MOSFET
G
D
S
I2PAK
(TO-262)
S
D
G
IRFSL9N60A, SiHFSL9N60A
Power MOSFET
Vishay Siliconix
PRODUCT SUMMARY
VDS (V) 600
()V
R
DS(on)
Q
(Max.) (nC) 49
g
(nC) 13
Q
gs
Q
(nC) 20
gd
Configuration Single
= 10 V 0.75
GS
FEATURES
• Halogen-free According to IEC 61249-2-21
Definition
• Low Gate Charge Q
Requirement
• Improved Gate, Avalanche and Dynamic
dV/dt Ruggedness
• Fully Characterized Capacitance and Avalanche Voltage
and Current
• Compliant to RoHS Directive 2002/95/EC
APPLICATIONS
• Switch Mode Power Supply (SMPS)
• Uninterruptable Power Supply
• High Speed Power Switching
• This Device is only for Through Hole Application
APPLICABLE OFF LINE SMPS TOPOLOGIES
• Active Clamped Forward
• Main Switch
ORDERING INFORMATION
Package I2PAK (TO-262)
Lead (Pb)-free and Halogen-free SiHFSL9N60A-GE3
Lead (Pb)-free
IRFSL9N60APbF
SiHFSL9N60A-E3
Results in Simple Drive
g
ABSOLUTE MAXIMUM RATINGS (TC = 25 °C, unless otherwise noted)
PARAMETER SYMBOL LIMIT UNIT
Drain-Source Voltage V
Gate-Source Voltage V
= 25 °C
T
Continuous Drain Current V
Pulsed Drain Current
a
at 10 V
GS
C
= 100 °C 5.8
C
DS
± 30
GS
I
D
IDM 37
Linear Derating Factor 1.3 W/°C
Single Pulse Avalanche Energy
Repetitive Avalanche Current
Repetitive Avalanche Energy
Maximum Power Dissipation T
Peak Diode Recovery dV/dt
b
a
a
= 25 °C P
C
c
Operating Junction and Storage Temperature Range T
E
AS
I
AR
E
AR
D
dV/dt 5.0 V/ns
, T
J
stg
Soldering Recommendations (Peak Temperature) for 10 s 300
Notes
a. Repetitive rating; pulse width limited by maximum junction temperature (see fig. 11).
b. Starting T
c. I
SD
d. 1.6 mm from case.
= 25 °C, L = 6.8 mH, Rg = 25 , IAS = 9.2 A (see fig. 12).
J
9.2 A, dI/dt 50 A/μs, VDD VDS, TJ 150 °C.
* Pb containing terminations are not RoHS compliant, exemptions may apply
Document Number: 90362
www.vishay.com
S11-1045-Rev. C, 30-May-11 1
THE PRODUCTS DESCRIBED HEREIN AND THIS DOCUMENT ARE SUBJECT TO SPECIFIC DISCLAIMERS, SET FORTH AT
This document is subject to change without notice.
600
9.2
290 mJ
9.2 A
17 mJ
170 W
- 55 to + 150
d
www.vishay.com/doc?91000
V
AT
°C
IRFSL9N60A, SiHFSL9N60A
Vishay Siliconix
THERMAL RESISTANCE RATINGS
PARAMETER SYMBOL TYP. MAX. UNIT
Maximum Junction-to-Ambient (PCB
Mounted, steady-state)
Maximum Junction-to-Case (Drain) R
R
thJA
thJC
SPECIFICATIONS (TJ = 25 °C, unless otherwise noted)
PARAMETER SYMBOL TEST CONDITIONS MIN. TYP. MAX. UNIT
Static
Drain-Source Breakdown Voltage V
Gate-Source Threshold Voltage V
Gate-Source Leakage I
Zero Gate Voltage Drain Current I
Drain-Source On-State Resistance R
Forward Transconductance g
Dynamic
Input Capacitance C
Output Capacitance C
Reverse Transfer Capacitance C
Output Capacitance C
Effective Output Capacitance C
Total Gate Charge Q
Gate-Source Charge Q
Gate-Drain Charge Q
Turn-On Delay Time t
Rise Time t
Turn-Off Delay Time t
Fall Time t
Drain-Source Body Diode Characteristics
Continuous Source-Drain Diode Current I
Pulsed Diode Forward Current
a
Body Diode Voltage V
Body Diode Reverse Recovery Time t
Body Diode Reverse Recovery Charge Q
Forward Turn-On Time t
Notes
a. Repetitive rating; pulse width limited by maximum junction temperature (see fig. 11).
b. Pulse width 300 μs; duty cycle 2 %.
c. C
eff. is a fixed capacitance that gives the same charging time as C
OSS
DS
GS(th)
V
GSS
DSS
VGS = 10 V ID = 5.5 A
DS(on)
fs
iss
- 180 -
oss
-7.1-
rss
oss
eff. VDS = 0 V to 480 V
oss
g
--13
gs
--
gd
d(on)
r
-30-
d(off)
-22-
f
S
V
V
GS
V
GS
R
MOSFET symbol
showing the
integral reverse
I
SM
SD
rr
rr
on
p - n junction diode
TJ = 25 °C, IF = 9.2 A, dI/dt = 100 A/μs
-40
°C/W
-0.75
VGS = 0, ID = 250 μA 600 - - V
VDS = VGS, ID = 250 μA 2.0 - 4.0 V
= ± 30 V - - ± 100 nA
GS
VDS = 600 V, VGS = 0 V - - 25
= 480 V, VGS = 0 V, TJ = 125 °C - - 250
DS
VDS = 25 V, ID = 3.1 A
VGS = 0 V
V
= 25 V
DS
f = 1.0 MHz, see fig. 5
V
DS
= 0 V
V
DS
= 1.0 V, f = 1.0 MHz - 1957 -
= 480 V, f = 1.0 MHz - 49 -
b
b
- - 0.75
5.5 - - S
- 1400 -
c
-96-
--49
= 9.2 A, VDS = 400 V
I
= 10 V
D
see fig. 6 and 13
b
20
-13-
= 300 V, ID = 9.2 A
V
DD
= 9.1 , RD = 35.5 , see fig. 10
g
G
TJ = 25 °C, IS = 9.2 A, VGS = 0 V
b
D
S
b
-25-
--9.2
--37
--1.5V
- 530 800 ns
b
-3.04.4μC
Intrinsic turn-on time is negligible (turn-on is dominated by LS and LD)
while VDS is rising from 0 to 80% VDS.
OSS
μA
pF
nC
ns
A
www.vishay.com Document Number: 90362
2 S11-1045-Rev. C, 30-May-11
This document is subject to change without notice.
THE PRODUCTS DESCRIBED HEREIN AND THIS DOCUMENT ARE SUBJECT TO SPECIFIC DISCLAIMERS, SET FORTH AT
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0.1
1
10
100
0.1 1 10 100
20µs PULSE WIDTH
T = 25 C
J
°
TOP
BOTTOM
VGS
15V
10V
8.0V
7.0V
6.0V
5.5V
5.0V
4.7V
V , Drain-to-Source Voltage (V)
I , Drain-to-Source Current (A)
DS
D
4.7V
1
10
100
1 10 100
20µs PULSE WIDTH
T = 150 C
J
°
TOP
BOTTOM
VGS
15V
10V
8.0V
7.0V
6.0V
5.5V
5.0V
4.7V
V , Drain-to-Source Voltage (V)
I , Drain-to-Source Current (A)
DS
D
4.7V
0.1
1
10
100
4.0 5.0 6.0 7.0 8.0 9.0 10.0
V = 50V
20µs PULSE WIDTH
DS
V , Gate-to-Source Voltage (V)
I , Drain-to-Source Current (A)
GS
D
T = 25 C
J
°
T = 150 C
J
°
-60 -40 -20 0 20 40 60 80 100 120 140 160
0.0
0.5
1.0
1.5
2.0
2.5
3.0
T , Junction Temperature ( C)
R , Drain-to-Source On Resistance
(Normalized)
J
DS(on)
°
V =
I =
GS
D
10V
9.2A
TYPICAL CHARACTERISTICS (25 °C, unless otherwise noted)
IRFSL9N60A, SiHFSL9N60A
Vishay Siliconix
Fig. 1 - Typical Output Characteristics
Fig. 2 - Typical Output Characteristics
Fig. 3 - Typical Transfer Characteristics
Fig. 4 - Normalized On-Resistance vs. Temperature
Document Number: 90362 www.vishay.com
S11-1045-Rev. C, 30-May-11 3
THE PRODUCTS DESCRIBED HEREIN AND THIS DOCUMENT ARE SUBJECT TO SPECIFIC DISCLAIMERS, SET FORTH AT
This document is subject to change without notice.
www.vishay.com/doc?91000
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