Vishay IRFS11N50A, SiHFS11N50A Data Sheet
www.vishay.com
N-Channel MOSFET
G
D
S
Available
Available
IRFS11N50A, SiHFS11N50A
Vishay Siliconix
Power MOSFET
PRODUCT SUMMARY
VDS (V) 500
R
()V
DS(on)
Q
(Max.) (nC) 52
g
Q
(nC) 13
gs
Q
(nC) 18
gd
Configuration Single
= 10 V 0.52
GS
FEATURES
• Low Gate Charge Qg results in Simple Drive
Requirement
• Improved Gate, Avalanche and Dynamic dV/dt
Ruggedness
• Fully Characterized Capacitance and
Avalanche Voltage and Current
• Effective C
Specified
oss
• Material categorization: For definitions of compliance
D2PAK (TO-263)
D
G
S
please see www.vishay.com/doc?99912
Note
*
Thi s datasheet pro vi des information about parts that are
RoHS-compliant and/or parts that are non-RoHS-compliant. For
example, parts with lead (Pb) terminations are not RoHS-compliant.
Please see the information/tables in this datasheet for details.
APPLICATIONS
• Switch Mode Power Supply (SMPS)
• Uninterruptible Power Supply
• High Speed Power Switching
TYPICAL SMPS TOPOLOGIES
• Two Transistor Forward
• Half and Full Bridge
• Power Factor Correction Boost
ORDERING INFORMATION
Package D2PAK (TO-263) D2PAK (TO-263) D2PAK (TO-263)
Lead (Pb)-free and Halogen-free SiHFS11N50A-GE3 SiHFS11N50ATRR-GE3
Lead (Pb)-free IRFS11N50APbF IRFS11N50ATRRP
Note
a. See device orientation.
a
a
SiHFS11N50ATRL-GE3
IRFS11N50ATRLP
a
a
ABSOLUTE MAXIMUM RATINGS (TC = 25 °C, unless otherwise noted)
PARAMETER SYMBOL LIMIT UNIT
Drain-Source Voltage V
Gate-Source Voltage V
T
= 25 °C
Continuous Drain Current V
Pulsed Drain Current
a
at 10 V
GS
C
= 100 °C
C
DS
GS
I
D
IDM
Linear Derating Factor
Single Pulse Avalanche Energy
Repetitive Avalanche Current
Repetitive Avalanche Energy
Maximum Power Dissipation T
Peak Diode Recovery dV/dt
Operating Junction and Storage Temperature Range T
Soldering Recommendations (Peak Temperature)
b
a
a
= 25 °C P
c
d
C
for 10 s
E
AS
I
AR
E
AR
D
dV/dt
, T
J
stg
Notes
a. Repetitive rating; pulse width limited by maximum junction temperature (see fig. 11).
b. Starting T
c. I
SD
d. 1.6 mm from case.
S13-1927-Rev. E, 09-Sep-13
= 25 °C, L = 4.5 mH, Rg = 25 , IAS = 11 A (see fig. 12).
J
11 A, dI/dt 140 A/μs, VDD VDS, TJ 150 °C.
1
For technical questions, contact: hvm@vishay.com
THIS DOCUMENT IS SUBJECT TO CHANGE WITHOUT NOTICE. THE PRODUCTS DESCRIBED HEREIN AND THIS DOCUMENT
ARE SUBJECT TO SPECIFIC DISCLAIMERS, SET FORTH AT www.vishay.com/doc?91000
500
± 30
11
7.0
44
1.3
275
11
17
170
6.9
- 55 to + 150
300
Document Number: 91286
V
AT
W/°C
mJ
A
mJ
W
V/ns
°C
IRFS11N50A, SiHFS11N50A
www.vishay.com
THERMAL RESISTANCE RATINGS
PARAMETER SYMBOL TYP. MAX. UNIT
Maximum Junction-to-Case (Drain) R
Maximum Junction-to-Ambient R
thJC
thCS
thJA
-0.75
0.50 -
-62
SPECIFICATIONS (TJ = 25 °C, unless otherwise noted)
PARAMETER SYMBOL TEST CONDITIONS MIN. TYP. MAX. UNIT
Static
Drain-Source Breakdown Voltage V
Temperature Coefficient
V
DS
Gate-Source Threshold Voltage V
Gate-Source Leakage I
Zero Gate Voltage Drain Current I
Drain-Source On-State Resistance R
Forward Transconductance g
DS
V
DS/TJ
GS(th)
V
GSS
DSS
VGS = 10 V ID = 6.6 A
DS(on)
fs
Dynamic
Input Capacitance C
Output Capacitance C
Reverse Transfer Capacitance C
Output Capacitance C
Effective Output Capacitance C
Total Gate Charge Q
Gate-Drain Charge Q
Turn-On Delay Time t
Rise Time t
Turn-Off Delay Time t
Fall Time t
iss
- 208 -
oss
-8.1-
rss
oss
eff. VDS = 0 V to 400 V
oss
g
--13
gs
--18
gd
d(on)
r
-32-
d(off)
-28-
f
V
V
Drain-Source Body Diode Characteristics
Continuous Source-Drain Diode Current I
Pulsed Diode Forward Current
a
Body Diode Voltage V
Body Diode Reverse Recovery Time t
Body Diode Reverse Recovery Charge Q
Forward Turn-On Time t
S
I
SM
SD
rr
rr
on
MOSFET symbol
showing the
integral reverse
p - n junction diode
TJ = 25 °C, IF = 11 A, dI/dt = 100 A/μs
Notes
a. Repetitive rating; pulse width limited by maximum junction temperature (see fig. 11).
b. Pulse width 300 μs; duty cycle 2 %.
c. C
eff. is a fixed capacitance that gives the same charging time as C
oss
VGS = 0, ID = 250 μA 500 - - V
Reference to 25 °C, I
= 1 mA
D
VDS = VGS, ID = 250 μA 2.0 - 4.0 V
= ± 30 V - - ± 100 nA
GS
VDS = 500 V, VGS = 0 V - - 25
= 400 V, VGS = 0 V, TJ = 125 °C - - 250
V
DS
b
VDS = 50 V, ID = 6.6 A 6.1 - - S
VGS = 0 V,
= 25 V,
V
DS
f = 1.0 MHz, see fig. 5
= 1.0 V, f = 1.0 MHz - 2000 -
V
DS
= 0 V
GS
= 10 V
GS
TJ = 25 °C, IS = 11 A, VGS = 0 V
V
= 400 V, f = 1.0 MHz - 55 -
DS
= 11 A, VDS = 400 V
I
D
see fig. 6 and 13
V
= 250 V, ID = 11 A
DD
R
= 9.1 , RD = 22
g
see fig. 10
c
b
b
D
G
S
b
b
Intrinsic turn-on time is negligible (turn-on is dominated by LS and LD)
while VDS is rising fom 0 % VDS to 80 % VDS.
oss
Vishay Siliconix
°C/WCase-to-Sink, Flat, Greased Surface R
-0.060-
- - 0.52
- 1423 -
-97-
--52
-14-
-35-
--11
--44
--1.5V
- 510 770 ns
-3.45.1μC
V/°C
μA
pF
nC Gate-Source Charge Q
ns
A
S13-1927-Rev. E, 09-Sep-13
2
Document Number: 91286
For technical questions, contact: hvm@vishay.com
THIS DOCUMENT IS SUBJECT TO CHANGE WITHOUT NOTICE. THE PRODUCTS DESCRIBED HEREIN AND THIS DOCUMENT
ARE SUBJECT TO SPECIFIC DISCLAIMERS, SET FORTH AT www.vishay.com/doc?91000
www.vishay.com
TYPICAL CHARACTERISTICS (25 °C, unless otherwise noted)
IRFS11N50A, SiHFS11N50A
Vishay Siliconix
Fig. 1 - Typical Output Characteristics
Fig. 2 - Typical Output Characteristics
Fig. 3 - Typical Transfer Characteristics
Fig. 4 - Normalized On-Resistance vs. Temperature
S13-1927-Rev. E, 09-Sep-13
For technical questions, contact: hvm@vishay.com
THIS DOCUMENT IS SUBJECT TO CHANGE WITHOUT NOTICE. THE PRODUCTS DESCRIBED HEREIN AND THIS DOCUMENT
ARE SUBJECT TO SPECIFIC DISCLAIMERS, SET FORTH AT www.vishay.com/doc?91000
3
Document Number: 91286
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