Vishay IRFR9310, IRFU9310, SiHFR9310, SiHFU9310 Data Sheet
www.vishay.com
S
G
D
P-Channel MOSFET
IRFR9310, IRFU9310, SiHFR9310, SiHFU9310
Vishay Siliconix
Power MOSFET
PRODUCT SUMMARY
VDS (V) - 400
R
()V
DS(on)
Q
(Max.) (nC) 13
g
Q
(nC) 3.2
gs
Q
(nC) 5.0
gd
Configuration Single
= - 10 V 7.0
GS
FEATURES
•P-Channel
• Surface Mount (IRFR9310, SiHFR9310)
• Straight Lead (IRFU9310, SiHFU9310)
• Advanced Process Technology
• Fast Switching
• Fully Avalanche Rated
• Material categorization: For definitions of compliance
please see www.vishay.com/doc?99912
DESCRIPTION
DPAK
(TO-252)
D
IPAK
(TO-251)
D
S
G
S
D
G
Third generation power MOSFETs from Vishay utilize
advanced processing techniques to achieve low
on-resistance per silicon area. This benefit, combined with
the fast switching speed and ruggedized device design that
power MOSFETs are well known for, provides the designer
with an extremely efficient and reliable device for use in a
wide variety of applications.
The DPAK is designed for surface mounting using vapor
phase, infrared, or wave soldering techniques. The straight
lead version (IRFU/SiHFU series) is for through-hole
mounting applications. Power dissipation levels up to 1.5 W
are possible in typical surface mount applications.
ORDERING INFORMATION
Package DPAK (TO-252) DPAK (TO-252) DPAK (TO-252) DPAK (TO-252) IPAK (TO-251)
Lead (Pb)-free and
Halogen-free
Lead (Pb)-free
Note
a. See device orientation.
SiHFR9310-GE3 SiHFR9310TRL-GE3 SiHFR9310TR-GE3 SiHFR9310TRR-GE3 SiHFU9310-GE3
IRFR9310PbF IRFR9310TRLPbF
SiHFR9310-E3 SiHFR9310TL-E3
a
IRFR9310TRPbFa IRFR9310TRRPbFa IRFU9310PbF
a
SiHFR9310T-E3
a
SiHFR9310TR-E3a SiHFU9310-E3
ABSOLUTE MAXIMUM RATINGS (TC = 25 °C, unless otherwise noted)
PARAMETER SYMBOL LIMIT UNIT
Drain-Source Voltage V
Gate-Source Voltage V
T
= 25 °C
Continuous Drain Current V
Pulsed Drain Current
a
at - 10 V
GS
C
= 100 °C - 1.1
T
C
DS
± 20
GS
I
D
IDM - 7.2
Linear Derating Factor 0.40
Single Pulse Avalanche Energy
Repetitive Avalanche Current
Repetitive Avalanche Energy
Maximum Power Dissipation T
Peak Diode Recovery dV/dt
b
a
a
= 25 °C P
c
C
Operating Junction and Storage Temperature Range T
Soldering Recommendations (Peak Temperature)
d
for 10 s 300
E
AS
I
AR
E
AR
D
dV/dt - 24
, T
J
stg
Notes
a. Repetitive rating; pulse width limited by maximum junction temperature (see fig. 11).
b. Starting T
c. I
SD
= 25 °C, L = 57 mH, Rg = 25 , IAS = - 1.8 A (see fig. 12).
J
- 1.1 A, dI/dt 450 A/μs, VDD VDS, TJ 150 °C.
d. 1.6 mm from case.
S13-0166-Rev. D, 04-Feb-13
1
For technical questions, contact: hvm@vishay.com
THIS DOCUMENT IS SUBJECT TO CHANGE WITHOUT NOTICE. THE PRODUCTS DESCRIBED HEREIN AND THIS DOCUMENT
ARE SUBJECT TO SPECIFIC DISCLAIMERS, SET FORTH AT www.vishay.com/doc?91000
- 400
- 1.8
92
- 1.8
5.0
50
- 55 to + 150
Document Number: 91284
V
A
W/°C
mJ
A
mJ
W
V/ns
°C
IRFR9310, IRFU9310, SiHFR9310, SiHFU9310
D
G
S
D
G
www.vishay.com
THERMAL RESISTANCE RATINGS
PARAMETER SYMBOL MIN. TYP. MAX. UNIT
Maximum Junction-to-Ambient R
Maximum Junction-to-Ambient
(PCB Mount)
a
Maximum Junction-to-Case (Drain) R
thJA
R
thJA
thJC
- - 110
--50
--2.5
Note
a. When mounted on 1" square PCB (FR-4 or G-10 material).
SPECIFICATIONS (TJ = 25 °C, unless otherwise noted)
PARAMETER SYMBOL TEST CONDITIONS MIN. TYP. MAX. UNIT
Static
Drain-Source Breakdown Voltage V
V
Temperature Coefficient VDS/TJ Reference to 25 °C, ID = - 1 mA - - 0.41 - V/°C
DS
Gate-Source Threshold Voltage V
Gate-Source Leakage I
Zero Gate Voltage Drain Current I
Drain-Source On-State Resistance R
Forward Transconductance g
DS
GS(th)
V
GSS
DSS
VGS = - 10 V ID = - 1.1 A
DS(on)
fs
Dynamic
Input Capacitance C
Reverse Transfer Capacitance C
Total Gate Charge Q
Gate-Drain Charge Q
Turn-On Delay Time t
Rise Time t
Turn-Off Delay Time t
Fall Time t
Internal Drain Inductance L
iss
-50-
oss
-8.0-
rss
g
--3.2
gs
--5.0
gd
d(on)
r
d(off)
-24-
f
D
V
-25-
Between lead,
6 mm (0.25") from
package and center of
Internal Source Inductance L
S
die contact
VGS = 0 V, ID = - 250 μA - 400 - - V
VDS = VGS, ID = - 250 μA - 2.0 - - 4.0 V
= ± 20 V - - ± 100 nA
GS
VDS = - 400 V, VGS = 0 V - - - 100
= - 320 V, VGS = 0 V, TJ = 125 °C - - - 500
V
DS
b
VDS = - 50 V, ID = - 1.1 A 0.91 - - S
VGS = 0 V,
V
= - 25 V,
DS
f = 1.0 MHz, see fig. 5
= - 1.1 A, VDS = - 320 V,
I
= - 10 V
GS
V
R
= 21 , RD = 180 , see fig. 10
g
D
see fig. 6 and 13
= - 200 V, ID = - 1.1 A,
DD
c
b
b
Vishay Siliconix
°C/W
--7.0
- 270 -
--13
-11-
-10-
-4.5-
-7.5-
μA
pFOutput Capacitance C
nC Gate-Source Charge Q
ns
nH
Drain-Source Body Diode Characteristics
Continuous Source-Drain Diode Current I
Pulsed Diode Forward Current
a
Body Diode Voltage V
Body Diode Reverse Recovery Time t
Body Diode Reverse Recovery Charge Q
Forward Turn-On Time t
S
I
SM
SD
rr
rr
on
MOSFET symbol
showing the
integral reverse
p - n junction diode
TJ = 25 °C, IS = - 1.1 A, VGS = 0 V
b
TJ = 25 °C, IF = -1.1 A, dI/dt = 100 A/μs
Intrinsic turn-on time is negligible (turn-on is dominated by LS and LD)
--- 1.9
--- 7.6
--- 4.0V
- 170 260 ns
b
- 640 960 nC
A
Notes
a. Repetitive rating; pulse width limited by maximum junction temperature (see fig. 11).
b. Pulse width 300 μs; duty cycle 2 %.
c. This is applied for IPAK, L
S13-0166-Rev. D, 04-Feb-13
THIS DOCUMENT IS SUBJECT TO CHANGE WITHOUT NOTICE. THE PRODUCTS DESCRIBED HEREIN AND THIS DOCUMENT
of DPAK is measured between lead and center of die contact.
S
2
For technical questions, contact: hvm@vishay.com
ARE SUBJECT TO SPECIFIC DISCLAIMERS, SET FORTH AT www.vishay.com/doc?91000
Document Number: 91284
IRFR9310, IRFU9310, SiHFR9310, SiHFU9310
www.vishay.com
TYPICAL CHARACTERISTICS (25 °C, unless otherwise noted)
Vishay Siliconix
10
1
TOP
BOTTOM
VGS
-15V
-10V
-8.0V
-7.0V
-6.0V
-5.5V
-5.0V
-4.5V
-4.5V
D
-I , Drain-to-Source Current (A)
20μs PULSE WIDTH
°
T = 25 C
0.1
1 10 100
-V , Drain-to-Source Voltage (V)
DS
J
Fig. 1 - Typical Output Characteristics
10
TOP
BOTTOM
VGS
-15V
-10V
-8.0V
-7.0V
-6.0V
-5.5V
-5.0V
-4.5V
10
°
T = 25 C
J
°
T = 150 C
J
1
D
-I , Drain-to-Source Current (A)
V = -50V
DS
0.1
4 5 6 7 8 9 10
-V , Gate-to-Source Voltage (V)
GS
20μs PULSE WI DTH
Fig. 3 - Typical Transfer Characteristics
2.5
2.0
I =
D
-1.8A
1
-4.5V
D
-I , Drain-to-Source Current (A)
20μs PULSE WIDTH
°
T = 150 C
0.1
1 10 100
-V , Drain-to-Source Voltage (V)
DS
J
Fig. 2 - Typical Output Characteristics
1.5
1.0
(Normalized)
0.5
DS(on)
R , Drain-to-Source On Resistance
0.0
-60 -40 -20 0 20 40 60 80 100 120 140 160
T , Junction Temperature ( C)
J
V =
GS
°
-10V
Fig. 4 - Normalized On-Resistance vs. Temperature
S13-0166-Rev. D, 04-Feb-13
3
Document Number: 91284
For technical questions, contact: hvm@vishay.com
THIS DOCUMENT IS SUBJECT TO CHANGE WITHOUT NOTICE. THE PRODUCTS DESCRIBED HEREIN AND THIS DOCUMENT
ARE SUBJECT TO SPECIFIC DISCLAIMERS, SET FORTH AT www.vishay.com/doc?91000
www.vishay.com
IRFR9310, IRFU9310, SiHFR9310, SiHFU9310
Vishay Siliconix
500
400
300
200
C, Capacitance (pF)
100
0
1 10 100
Fig. 5 - Typical Capacitance vs. Drain-to-Source Voltage
20
I =
D
16
12
V
=
0V,
C
C
C
iss
oss
rss
f = 1MHz
+ C
+ C
C SHORTED
GS
C
=
iss gs gd , ds
C
=
rss gd
C
=
oss ds gd
C
C
C
-V , Drain-to-Source Voltage (V)
DS
-1.1A
V = -320V
DS
V = -200V
DS
V = -80V
DS
10
°
T = 150 C
J
1
°
T = 25 C
J
SD
-I , Reverse Drain Current (A)
V = 0 V
0.1
1.0 2.0 3.0 4.0 5.0
-V ,Source-to-Drain Voltage (V)
SD
Fig. 7 - Typical Source-Drain Diode Forward Voltage
100
OPERATION IN THIS AREA LIMITED
10
BY R
DS(on)
GS
10us
8
1
D
-I , Drain Current (A)I , Drain Current (A)
4
GS
-V , Gate-to-Source Voltage (V)
FOR TEST CIRCUIT
0
0 4 8 12 16
Q , Total Gate Charge (nC)
G
Fig. 6 - Typical Gate Charge vs. Gate-to-Source Voltage
S13-0166-Rev. D, 04-Feb-13
THIS DOCUMENT IS SUBJECT TO CHANGE WITHOUT NOTICE. THE PRODUCTS DESCRIBED HEREIN AND THIS DOCUMENT
ARE SUBJECT TO SPECIFIC DISCLAIMERS, SET FORTH AT www.vishay.com/doc?91000
SEE FIGURE
For technical questions, contact: hvm@vishay.com
13
0.1
10 100 1000
4
°
= 25 C
C
T T= 150 C
Single Pulse
°
J
-V , Drain-to-Source Voltage (V)
DS
Fig. 8 - Maximum Safe Operating Area
Document Number: 91284
100us
1ms
10ms
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