Vishay IRFR9020, IRFU9020, SiHFR9020, SiHFU9020 Data Sheet
www.vishay.com
S
G
D
P-Channel MOSFET
DPAK
(TO-252)
IPAK
(TO-251)
G
D
S
S
D
G
D
IRFR9020, IRFU9020, SiHFR9020, SiHFU9020
Vishay Siliconix
Power MOSFET
PRODUCT SUMMARY
VDS (V) - 50
R
()V
DS(on)
Q
(Max.) (nC) 14
g
Q
(nC) 6.5
gs
Q
(nC) 6.5
gd
Configuration Single
= - 10 V 0.28
GS
FEATURES
• Surface Mountable (Order As IRFR9020,
SiHFR9020)
• Straight Lead Option (Order As IRFU9020,
SiHFU9020)
• Repetitive Avalanche Ratings
• Dynamic dV/dt Rating
• Simple Drive Requirements
• Ease of Paralleling
• Material categorization: For definitions of compliance
please see www.vishay.com/doc?99912
DESCRIPTION
The power MOSFET technology is the key to Vishay’s
advanced line of power MOSFET transistors. The efficient
geometry and unique processing of this latest “State of the
Art” design achieves: very low on-state resistance
combined with high transconductance; superior reverse
energy and diode recovery dV/dt.
The power MOSFET transistors also feature all of the well
established advantages of MOSFET’S such as voltage
control, very fast switching, ease of paralleling and
temperature stability of the electrical parameters.
Surface mount packages enhance circuit performance by
reducing stray inductances and capacitance. The TO-252
surface mount package brings the advantages of power
MOSFET’s to high volume applications where PC board
surface mounting is desirable. The surface mount option
IRFR9020, SiHFR9020 is provided on 16mm tape. The
straight lead option IRFU9020, SiHFU9020 of the device is
called the IPAK (TO-251).
They are well suited for applications where limited heat
dissipation is required such as, computers and peripherals,
telecommunication equipment, DC/DC converters, and a
wide range of consumer products.
ORDERING INFORMATION
Package DPAK (TO-252) DPAK (TO-252) DPAK (TO-252) IPAK (TO-251)
Lead (Pb)-free and Halogen-free SiHFR9020-GE3 SiHFR9020TR-GE3
Lead (Pb)-free
IRFR9020PbF IRFR9020TRPbF
SiHFR9020-E3 SiHFR9020T-E3
Note
a. See device orientation.
a
a
a
SiHFR9020TRL-GE3aSiHFU9020-GE3
IRFR9020TRLPbF
SiHFR9020TL-E3
a
a
IRFU9020PbF
SiHFU9020-E3
ABSOLUTE MAXIMUM RATINGS (TC = 25 °C, unless otherwise noted)
PARAMETER SYMBOL LIMIT UNIT
Drain-Source Voltage V
Gate-Source Voltage V
= 25 °C
T
Continuous Drain Current V
Pulsed Drain Current
a
at - 10 V
GS
C
= 100 °C - 6.3
C
DS
± 20
GS
I
D
IDM - 40
Linear Derating Factor 0.33 W/°C
Single Pulse Avalanche Energy
Repetitive Avalanche Current
Repetitive Avalanche Energy
Maximum Power Dissipation T
Peak Diode Recovery dV/dt
Operating Junction and Storage Temperature Range T
Soldering Recommendations (Peak Temperature)
b
a
a
= 25 °C P
c
d
C
for 10 s 300
E
AS
I
AR
E
AR
D
dV/dt 5.8 V/ns
, T
J
stg
Notes
a. Repetitive rating; pulse width limited by maximum junction temperature (see fig. 16).
= - 25 V, Starting TJ = 25 °C, L = 5.1 mH, Rg = 25 , Peak IL = - 9.9 A
b. V
DD
c. I
- 9.9 A, dI/dt -120 A/μs, VDD 40 V, TJ 150 °C.
SD
d. 0.063" (1.6 mm) from case.
e. When mounted on 1" square PCB (FR-4 or G-10 material).
S13-0169-Rev. D, 04-Feb-13
1
For technical questions, contact: hvm@vishay.com
THIS DOCUMENT IS SUBJECT TO CHANGE WITHOUT NOTICE. THE PRODUCTS DESCRIBED HEREIN AND THIS DOCUMENT
ARE SUBJECT TO SPECIFIC DISCLAIMERS, SET FORTH AT www.vishay.com/doc?91000
- 50
- 9.9
250 mJ
- 9.9 A
4.2 mJ
42 W
- 55 to + 150
Document Number: 90350
V
AT
°C
IRFR9020, IRFU9020, SiHFR9020, SiHFU9020
D
S
G
S
D
G
www.vishay.com
THERMAL RESISTANCE RATINGS
PARAMETER SYMBOL MIN. TYP. MAX. UNIT
Maximum Junction-to-Ambient R
Maximum Junction-to-Case (Drain) R
thJA
thCS
thJC
- - 110
-1.7-
--3.0
SPECIFICATIONS (TJ = 25 °C, unless otherwise noted)
PARAMETER SYMBOL TEST CONDITIONS MIN. TYP. MAX. UNIT
Static
Drain-Source Breakdown Voltage V
Gate-Source Threshold Voltage V
Gate-Source Leakage I
Zero Gate Voltage Drain Current I
Drain-Source On-State Resistance R
Forward Transconductance g
Dynamic
Input Capacitance C
Reverse Transfer Capacitance C
Total Gate Charge Q
Gate-Source Charge Q
Gate-Drain Charge Q
Turn-On Delay Time t
Rise Time t
Turn-Off Delay Time t
Fall Time t
Internal Drain Inductance L
Internal Source Inductance L
DS
GS(th)
V
GSS
DSS
DS(on)
fs
iss
oss
rss
g
gs
gd
d(on)
r
d(off)
-2538
f
D
S
VDS = 0.8 x max. rating, VGS = 0 V, TJ = 125 °C
VGS = - 10 V ID = 5.7 A
-320-
-70-
-4.36.5
V
-4.36.5
-1218
VGS = 0 V, ID = - 250 μA - 50 - - V
VDS = VGS, ID = - 250 μA - 2.0 - - 4.0 V
= ± 20 V - - ± 500 nA
GS
VDS = max. rating, VGS = 0 V - - 250
b
VDS - 50 V, IDS = - 5.7 A 2.3 3.5 - S
VGS = 0 V,
V
= - 25 V,
DS
f = 1.0 MHz, see fig. 9
= - 9.7 A, VDS = 0.8 x max.
I
D
= - 10 V
GS
rating, see fig. 18
(Independent operating
temperature)
= - 25 V, ID = - 9.7 A,
V
DD
R
= 18 , RD = 2.4 , see fig. 17
g
(Independent operating temperature)
Between lead,
6 mm (0.25") from
package and center of
die contact.
Vishay Siliconix
°C/WCase-to-Sink R
- - 1000
- 0.20 0.28
-490-
-9.414
-8.212
-5766
-4.5-
-7.5-
μA
pFOutput Capacitance C
nC
ns
nH
Drain-Source Body Diode Characteristics
Continuous Source-Drain Diode Current I
Pulsed Diode Forward Current
a
Body Diode Voltage V
Body Diode Reverse Recovery Time t
Body Diode Reverse Recovery Charge Q
Forward Turn-On Time t
S
I
SM
SD
rr
rr
on
MOSFET symbol
showing the
integral reverse
p - n junction diode
TJ = 25 °C, IS = - 9.9 A, VGS = 0 V
b
TJ = 25 °C, IF = - 9,7 A, dI/dt = 100 A/μs
--- 9.9
--- 40
--- 6.3V
56 110 280 ns
b
0.17 0.34 0.85 nC
Intrinsic turn-on time is negligible (turn-on is dominated by LS and LD)
A
Notes
a. Repetitive rating; pulse width limited by maximum junction temperature (see fig. 16).
b. Pulse width 300 μs; duty cycle 2 %.
THIS DOCUMENT IS SUBJECT TO CHANGE WITHOUT NOTICE. THE PRODUCTS DESCRIBED HEREIN AND THIS DOCUMENT
ARE SUBJECT TO SPECIFIC DISCLAIMERS, SET FORTH AT www.vishay.com/doc?91000
For technical questions, contact: hvm@vishay.com
S13-0169-Rev. D, 04-Feb-13
2
Document Number: 90350
IRFR9020, IRFU9020, SiHFR9020, SiHFU9020
www.vishay.com
TYPICAL CHARACTERISTICS (25 °C, unless otherwise noted)
Vishay Siliconix
Fig. 1 - Typical Output Characteristics
Fig. 2 - Typical Transfer Characteristics
Fig. 4 - Maximum Safe Operating Area
Fig. 5 - Typical Transconductance vs. Drain Current
Fig. 3 - Typical Saturation Characteristics
S13-0169-Rev. D, 04-Feb-13
For technical questions, contact: hvm@vishay.com
THIS DOCUMENT IS SUBJECT TO CHANGE WITHOUT NOTICE. THE PRODUCTS DESCRIBED HEREIN AND THIS DOCUMENT
ARE SUBJECT TO SPECIFIC DISCLAIMERS, SET FORTH AT www.vishay.com/doc?91000
3
Fig. 6 - Typical Source-Drain Diode Forward Voltage
Document Number: 90350
www.vishay.com
IRFR9020, IRFU9020, SiHFR9020, SiHFU9020
Vishay Siliconix
Fig. 7 - Breakdown Voltage vs. Temperature
Fig. 8 - Normalized On-Resistance vs. Temperature
Fig. 9 - Typical Capacitance vs. Drain-to-Source Voltage
Fig. 10 - Typical Gate Charge vs. Gate-to-Source Voltage
S13-0169-Rev. D, 04-Feb-13
For technical questions, contact: hvm@vishay.com
THIS DOCUMENT IS SUBJECT TO CHANGE WITHOUT NOTICE. THE PRODUCTS DESCRIBED HEREIN AND THIS DOCUMENT
ARE SUBJECT TO SPECIFIC DISCLAIMERS, SET FORTH AT www.vishay.com/doc?91000
4
Document Number: 90350
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