Vishay IRFR024, IRFU024, SiHFR024, SiHFU024 Data Sheet

www.vishay.com

N-Channel MOSFET

G

D

S

DPAK

(TO-252)

IPAK

(TO-251)

G

D

S

S

D

G

D

IRFR024, IRFU024, SiHFR024, SiHFU024

Vishay Siliconix

Power MOSFET

PRODUCT SUMMARY

VDS (V) 60

R

()V

DS(on)

Q

(Max.) (nC) 25

g

Q

(nC) 5.8

gs

Q

(nC) 11

gd

Configuration Single

= 10 V 0.10

GS

FEATURES

• Dynamic dV/dt Rating

• Surface Mount (IRFR024, SiHFR024)

• Straight Lead (IRFU024, SiHFU024)

• Available in Tape and Reel

• Fast Switching

• Ease of Paralleling

• Simple Drive Requirements

• Material categorization: For definitions of compliance
please see www.vishay.com/doc?99912

DESCRIPTION

Third generation power MOSFETs from Vishay provide the
designer with the best combination of fast switching,
ruggedized device design, low on-resistance and
cost-effectiveness.
The DPAK is designed for surface mounting using vapor
phase, infrared, or wave soldering techniques. The straight
lead version (IRFU, SiHFU series) is for through-hole
mounting applications. Power dissipation levels up to 1.5 W
are possible in typical surface mount applications.

ORDERING INFORMATION

Package DPAK (TO-252) DPAK (TO-252) DPAK (TO-252) IPAK (TO-251)

Lead (Pb)-free and Halogen-free SiHFR024-GE3 SiHFR024TR-GE3 SiHFR024TRL-GE3 SiHFU024-GE3

Lead (Pb)-free

Note

a. See device orientation.

IRFR024PbF IRFR024TRPbF

SiHFR024-E3 SiHFR024T-E3

a

- IRFU024PbF

a

- SiHFU024-E3

ABSOLUTE MAXIMUM RATINGS (TC = 25 °C, unless otherwise noted)

PARAMETER SYMBOL LIMIT UNIT

Drain-Source Voltage V

Gate-Source Voltage V

T

= 25 °C

Continuous Drain Current V

Pulsed Drain Current

a

at 10 V

GS

C

= 100 °C 9.0

C

DS

± 20

GS

I

D

IDM 56

Linear Derating Factor 0.33

Linear Derating Factor (PCB Mount)

Single Pulse Avalanche Energy

Maximum Power Dissipation T

Maximum Power Dissipation (PCB Mount)

Peak Diode Recovery dV/dt

Operating Junction and Storage Temperature Range T

Soldering Recommendations (Peak Temperature)

e

b

= 25 °C

e

c

d

C

TA = 25 °C 2.5

for 10 s 260

E

AS

P

D

dV/dt 5.5 V/ns

, T

J

stg

Notes

a. Repetitive rating; pulse width limited by maximum junction temperature (see fig. 11).

= 25 V, starting TJ = 25 °C, L = 541 μH, Rg = 25 , IAS = 14 A (see fig. 12).

b. V

DD

c. I

 17 A, dI/dt  110 A/μs, VDD  VDS, TJ  150 °C.

SD

d. 1.6 mm from case.
e. When mounted on 1" square PCB (FR-4 or G-10 material).

S13-0170-Rev. D, 04-Feb-13

1

For technical questions, contact: [e-mail]

THIS DOCUMENT IS SUBJECT TO CHANGE WITHOUT NOTICE. THE PRODUCTS DESCRIBED HEREIN AND THIS DOCUMENT

ARE SUBJECT TO SPECIFIC DISCLAIMERS, SET FORTH AT www.vishay.com/doc?91000

60

14

0.020

91 mJ

42

- 55 to + 150

Document Number: 91264

V

AT

W/°C

W

°C

IRFR024, IRFU024, SiHFR024, SiHFU024

D

S

G

S

D

G

www.vishay.com

THERMAL RESISTANCE RATINGS

PARAMETER SYMBOL MIN. TYP. MAX. UNIT

Maximum Junction-to-Ambient R

Maximum Junction-to-Ambient
(PCB Mount)

a

Maximum Junction-to-Case (Drain) R

thJA

R

thJA

thJC

- - 110

--50

--3.0

Note

a. When mounted on 1" square PCB (FR-4 or G-10 material).

SPECIFICATIONS (TJ = 25 °C, unless otherwise noted)

PARAMETER SYMBOL TEST CONDITIONS MIN. TYP. MAX. UNIT

Static

Drain-Source Breakdown Voltage V

Temperature Coefficient VDS/TJ Reference to 25 °C, ID = 1 mA - 0.073 - V/°C

V

DS

Gate-Source Threshold Voltage V

Gate-Source Leakage I

Zero Gate Voltage Drain Current I

Drain-Source On-State Resistance R

Forward Transconductance g

DS

GS(th)

V

GSS

DSS

VGS = 10 V ID = 8.4 A

DS(on)

fs

Dynamic

Input Capacitance C

Reverse Transfer Capacitance C

Total Gate Charge Q

Gate-Drain Charge Q

Turn-On Delay Time t

Rise Time t

Turn-Off Delay Time t

Fall Time t

Internal Drain Inductance L

Internal Source Inductance L

iss

- 360 -

oss

-79-

rss

g

--5.8

gs

--11

gd

d(on)

r

-25-

d(off)

-42-

f

D

Between lead,
6 mm (0.25") from
package and center of

S

die contact

Drain-Source Body Diode Characteristics

Continuous Source-Drain Diode Current I

Pulsed Diode Forward Current

a

Body Diode Voltage V

Body Diode Reverse Recovery Time t

Body Diode Reverse Recovery Charge Q

Forward Turn-On Time t

S

I

SM

SD

rr

rr

on

MOSFET symbol
showing the
integral reverse
p - n junction diode

Notes

a. Repetitive rating; pulse width limited by maximum junction temperature (see fig. 11).
b. Pulse width  300 μs; duty cycle  2 %.

VGS = 0 V, ID = 250 μA 60 - - V

VDS = VGS, ID = 250 μA 2.0 - 4.0 V

= ± 20 V - - ± 100 nA

GS

VDS = 60 V, VGS = 0 V - - 25

V

= 48 V, VGS = 0 V, TJ = 125 °C - - 250

DS

VDS = 25 V, ID = 8.4 A

b

b

VGS = 0 V,

V

= 25 V,

DS

f = 1.0 MHz, see fig. 5

= 17 A, VDS = 48 V,

I

= 10 V

V

GS

R

= 18 , RD = 1.7 , see fig. 10

G

TJ = 25 °C, IS = 14 A, VGS = 0 V

TJ = 25 °C, IF = 17 A, dI/dt = 100 A/μs

D

see fig. 6 and 13

VDD = 30 V, ID = 17A,

b

b

b

b

Intrinsic turn-on time is negligible (turn-on is dominated by LS and LD)

Vishay Siliconix

°C/W

- - 0.10 

6.2 - - S

- 640 -

--25

-13-

-58-

-4.5-

-7.5-

--14

--56

--1.5V

- 88 180 ns

- 0.29 0.64 μC

μA

pFOutput Capacitance C

nC Gate-Source Charge Q

ns

nH

A

THIS DOCUMENT IS SUBJECT TO CHANGE WITHOUT NOTICE. THE PRODUCTS DESCRIBED HEREIN AND THIS DOCUMENT

ARE SUBJECT TO SPECIFIC DISCLAIMERS, SET FORTH AT www.vishay.com/doc?91000

For technical questions, contact: [e-mail]

S13-0170-Rev. D, 04-Feb-13

2

Document Number: 91264

IRFR024, IRFU024, SiHFR024, SiHFU024

www.vishay.com

TYPICAL CHARACTERISTICS (25 °C, unless otherwise noted)

Vishay Siliconix

Fig. 1 - Typical Output Characteristics, TC = 25 °C

Fig. 2 - Typical Output Characteristics, T

= 150 °C

C

Fig. 3 - Typical Transfer Characteristics

Fig. 4 - Normalized On-Resistance vs. Temperature

S13-0170-Rev. D, 04-Feb-13

For technical questions, contact: [e-mail]

THIS DOCUMENT IS SUBJECT TO CHANGE WITHOUT NOTICE. THE PRODUCTS DESCRIBED HEREIN AND THIS DOCUMENT

ARE SUBJECT TO SPECIFIC DISCLAIMERS, SET FORTH AT www.vishay.com/doc?91000

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Document Number: 91264

www.vishay.com

IRFR024, IRFU024, SiHFR024, SiHFU024

Vishay Siliconix

Fig. 5 - Typical Capacitance vs. Drain-to-Source Voltage

Fig. 6 - Typical Gate Charge vs. Gate-to-Source Voltage

Fig. 7 - Typical Source-Drain Diode Forward Voltage

Fig. 8 - Maximum Safe Operating Area

S13-0170-Rev. D, 04-Feb-13

For technical questions, contact: [e-mail]

THIS DOCUMENT IS SUBJECT TO CHANGE WITHOUT NOTICE. THE PRODUCTS DESCRIBED HEREIN AND THIS DOCUMENT

ARE SUBJECT TO SPECIFIC DISCLAIMERS, SET FORTH AT www.vishay.com/doc?91000

4

Document Number: 91264