Vishay IRFPS43N50K, SiHFPS43N50K Data Sheet
IRFPS43N50K, SiHFPS43N50K
Available
RoHS*
COMPLIANT
Power MOSFET
Vishay Siliconix
PRODUCT SUMMARY
VDS (V) 500
R
()V
DS(on)
Q
(Max.) (nC) 350
g
Q
(nC) 85
gs
Q
(nC) 180
gd
= 10 V 0.078
GS
Configuration Single
Super-247
G
S
D
G
N-Channel MOSFET
ORDERING INFORMATION
Package
Lead (Pb)-free
SnPb
FEATURES
• Low Gate Charge Qg Results in Simple Drive
Requirement
• Improved Gate, Avalanche and Dynamic dV/dt
Ruggedness
• Fully Characterized Capacitance and Avalanche Voltage
and Current
D
•Low R
DS(on)
• Compliant to RoHS Directive 2002/95/EC
APPLICATIONS
• Switch Mode Power Supply (SMPS)
• Uninterruptible Power Supply
S
• High Speed Power Switching
• Hard Switched and High Frequency Circuits
Super-247
IRFPS43N50KPbF
SiHFPS43N50K-E3
IRFPS43N50K
SiHFPS43N50K
ABSOLUTE MAXIMUM RATINGS (TC = 25 °C, unless otherwise noted)
PARAMETER SYMBOL LIMIT UNIT
Drain-Source Voltage V
Gate-Source Voltage V
= 25 °C
T
Continuous Drain Current V
Pulsed Drain Current
a
at 10 V
GS
C
= 100 °C 29
C
DS
± 30
GS
I
D
IDM 190
Linear Derating Factor 4.3 W/°C
Single Pulse Avalanche Energy
Repetitive Avalanche Current
Repetitive Avalanche Energy
Maximum Power Dissipation T
Peak Diode Recovery dV/dt
b
a
a
= 25 °C P
c
C
Operating Junction and Storage Temperature Range T
E
AS
I
AR
E
AR
D
dV/dt 9.0 V/ns
, T
J
stg
Soldering Recommendations (Peak Temperature) for 10 s 300
Notes
a. Repetitive rating; pulse width limited by maximum junction temperature (see fig. 11).
b. Starting T
c. I
SD
= 25 °C, L = 0.82 mH, Rg = 25 , IAS = 47 A (see fig. 12c).
J
47 A, dI/dt 230 A/μs, VDD VDS, TJ 150 °C.
d. 1.6 mm from case.
* Pb containing terminations are not RoHS compliant, exemptions may apply
Document Number: 91262 www.vishay.com
S11-0112-Rev. C, 31-Jan-11 1
500
47
910 mJ
47 A
54 mJ
540 W
- 55 to + 150
d
V
AT
°C
IRFPS43N50K, SiHFPS43N50K
Vishay Siliconix
THERMAL RESISTANCE RATINGS
PARAMETER SYMBOL TYP. MAX. UNIT
Maximum Junction-to-Ambient R
Maximum Junction-to-Case (Drain) R
thJA
thCS
thJC
SPECIFICATIONS (TJ = 25 °C, unless otherwise noted)
PARAMETER SYMBOL TEST CONDITIONS MIN. TYP. MAX. UNIT
Static
Drain-Source Breakdown Voltage V
V
Temperature Coefficient VDS/TJ Reference to 25 °C, ID = 1 mA - 0.60 - V/°C
DS
Gate-Source Threshold Voltage V
Gate-Source Leakage I
Zero Gate Voltage Drain Current I
Drain-Source On-State Resistance R
Forward Transconductance g
Dynamic
Input Capacitance C
Output Capacitance C
Reverse Transfer Capacitance C
Output Capacitance C
Effective Output Capacitance C
Total Gate Charge Q
Gate-Drain Charge Q
Turn-On Delay Time t
Rise Time t
Turn-Off Delay Time t
Fall Time t
Drain-Source Body Diode Characteristics
Continuous Source-Drain Diode Current I
Pulsed Diode Forward Current
a
Body Diode Voltage V
Body Diode Reverse Recovery Time t
Body Diode Reverse Recovery Charge Q
Body Diode Recovery Current I
Forward Turn-On Time t
Notes
a. Repetitive rating; pulse width limited by maximum junction temperature (see fig. 11).
b. Pulse width 400 μs; duty cycle 2 %.
c. C
eff. is a fixed capacitance that gives the same charging time as C
oss
DS
GS(th)
V
GSS
DSS
VGS = 10 V ID = 28 A
DS(on)
fs
iss
- 960 -
oss
- 120 -
rss
oss
eff. VDS = 0 V to 400 V
oss
g
--85
gs
- - 180
gd
d(on)
r
-55-
d(off)
-74-
f
S
I
SM
SD
rr
rr
RRM
on
V
V
GS
V
GS
MOSFET symbol
showing the
integral reverse
p - n junction diode
TJ = 25 °C, IF = 47 A, dI/dt = 100 A/μs
-40
0.24 -
°C/WCase-to-Sink, Flat, Greased Surface R
-0.23
VGS = 0 V, ID = 250 μA 500 - - V
VDS = VGS, ID = 250 μA 3.0 - 5.0 V
= ± 30 V - - ± 100 nA
GS
VDS = 500 V, VGS = 0 V - - 50
= 400 V, VGS = 0 V, TJ = 125 °C - - 250
DS
b
- 0.078 0.090
VDS = 50 V, ID = 28 A 23 - - S
VGS = 0 V,
V
= 25 V,
DS
f = 1.0 MHz, see fig. 5
V
= 1.0 V, f = 1.0 MHz - 10170 -
DS
= 0 V
= 400 V, f = 1.0 MHz - 240 -
V
DS
c
- 8310 -
- 440 -
- - 350
= 47 A, VDS = 400 V,
I
D
see fig. 6 and 13
= 10 V
V
= 250 V, ID = 47 A,
DD
R
= 1.0 , see fig. 10
G
TJ = 25 °C, IS = 47 A, VGS = 0 V
b
-25-
- 140 -
b
D
G
S
b
--47
- - 190
--1.5V
- 620 940 ns
b
-1421μC
-38-A
Intrinsic turn-on time is negligible (turn-on is dominated by LS and LD)
while VDS is rising from 0 % to 80 % VDS.
oss
μA
pF
nC Gate-Source Charge Q
ns
A
www.vishay.com Document Number: 91262
2 S11-0112-Rev. C, 31-Jan-11
IRFPS43N50K, SiHFPS43N50K
0.01
0.1
1
10
100
1000
0.1 1 10 100
20µs PULSE WIDTH
T = 25 C
J
°
TOP
BOTTOM
VGS
15V
10V
8.0V
7.0V
6.0V
5.5V
5.0V
4.5V
V , Drain-to-Source Voltage (V)
I , Drain-to-Source Current (A)
DS
D
4.5V
0.1
1
10
100
1000
0.1 1 10 100
20µs PULSE WIDTH
T = 150 C
J
°
TOP
BOTTOM
VGS
15V
10V
8.0V
7.0V
6.0V
5.5V
5.0V
4.5V
V , Drain-to-Source Voltage (V)
I , Drain-to-Source Current (A)
DS
D
4.5V
0.1
1
10
100
1000
4 5 6 7 8 9 10 11 12
V = 50V
20µs PULSE WIDTH
DS
V , Gate-to-Source Voltage (V)
I , Drain-to-Source Current (A)
GS
D
T = 25 C
J
°
T = 150 C
J
°
-60 -40 -20 0 20 40 60 80 100 120 140 160
0.0
0.5
1.0
1.5
2.0
2.5
3.0
3.5
T , Junction Temperature ( C)
R , Drain-to-Source On Resistance
(Normalized)
J
DS(on)
°
V =
I =
GS
D
10V
48A
TYPICAL CHARACTERISTICS (25 °C, unless otherwise noted)
Vishay Siliconix
Fig. 1 - Typical Output Characteristics
Fig. 2 - Typical Output Characteristics
Fig. 3 - Typical Transfer Characteristics
Fig. 4 - Normalized On-Resistance vs. Temperature
Document Number: 91262 www.vishay.com
S11-0112-Rev. C, 31-Jan-11 3
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